Development And Investigation Of Novel Logic In Memory And Nonvolatile Logic Circuits Utilizing Hafnium Oxide Based Ferroelectric Field Effect Transistors
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Development And Investigation Of Novel Logic In Memory And Nonvolatile Logic Circuits Utilizing Hafnium Oxide Based Ferroelectric Field Effect Transistors
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Author : Evelyn Tina Breyer
language : en
Publisher: BoD – Books on Demand
Release Date : 2022-02-08
Development And Investigation Of Novel Logic In Memory And Nonvolatile Logic Circuits Utilizing Hafnium Oxide Based Ferroelectric Field Effect Transistors written by Evelyn Tina Breyer and has been published by BoD – Books on Demand this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-02-08 with Technology & Engineering categories.
Not only conventional computer architectures, such as the von-Neumann architecture with its inevitable von-Neumann bottleneck, but likewise the emerging field of edge computing require to substantially decrease the spatial separation of logic and memory units to overcome power and latency shortages. The integration of logic operations into memory units (Logic-in-Memory), as well as memory elements into logic circuits (Nonvolatile Logic), promises to fulfill this request by combining high-speed with low-power operation. Ferroelectric field-effect transistors (FeFETs) based on hafnium oxide prove to be auspicious candidates for the memory elements in applications of that kind, as those nonvolatile memory elements are CMOS-compatible and likewise scalable. This work presents implementations that merge logic and memory by exploiting the natural capability of the FeFET to combine logic functionality (transistor) and memory ability (nonvolatility).
Memory Based Logic Synthesis
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Author : Tsutomu Sasao
language : en
Publisher: Springer Science & Business Media
Release Date : 2011-03-01
Memory Based Logic Synthesis written by Tsutomu Sasao and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011-03-01 with Technology & Engineering categories.
This book describes the synthesis of logic functions using memories. It is useful to design field programmable gate arrays (FPGAs) that contain both small-scale memories, called look-up tables (LUTs), and medium-scale memories, called embedded memories. This is a valuable reference for both FPGA system designers and CAD tool developers, concerned with logic synthesis for FPGAs.
Logic Circuits And Microcomputer Systems
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Author : Claude A. Wiatrowski
language : en
Publisher:
Release Date : 1981
Logic Circuits And Microcomputer Systems written by Claude A. Wiatrowski and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1981 with Electronic digital computers categories.
Modeling Of Iii V Nanoscale Field Effect Transistors For Logic Circuits
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Author : Saeroonter Oh
language : en
Publisher:
Release Date : 2010
Modeling Of Iii V Nanoscale Field Effect Transistors For Logic Circuits written by Saeroonter Oh and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010 with categories.
As silicon CMOS technology continues to scale down its minimum critical dimension, it becomes increasingly difficult to enhance device switching speed due to fundamental limitations. Innovations in device structure and materials are pursued to accommodate improvement in performance as well as reduction in transistor size. For beyond-22-nm CMOS technology, III-V channel FETs are considered as a compelling candidate for extending the device scaling limit of low-power and high-speed operation, owing to their superb carrier transport properties and recent experimental advancements. In this thesis, device simulation, compact modeling, circuit design, circuit performance assessment and estimation of III-V logic transistors are carried out to study key considerations such as device pitch, parasitics, and the importance of PMOS for circuit-level performance. To effectively connect device characteristics with circuit design, a physics-based compact model for digital logic is constructed. The model encompasses effects such as field-confined and spatially-confined trapezoidal quantum well sub-band energies, gate leakage tunneling current and parasitic capacitance. The developed compact model contains only three fitting parameters and is verified by experiment and circuit simulations. The compact model enables other bodies of work for the purpose of circuit-level design and performance estimation. To demonstrate the capability of the model in a circuit environment we apply the compact model to composite circuits such as FO4 inverter chains and SRAM cache to evaluate and project performance and power trends for beyond-22-nm technology.
Ferroelectric Gate Field Effect Transistor Memories
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Author : Byung-Eun Park
language : en
Publisher: Springer Nature
Release Date : 2020-03-23
Ferroelectric Gate Field Effect Transistor Memories written by Byung-Eun Park and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2020-03-23 with Technology & Engineering categories.
This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims the ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide the readers with development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass, plastic or paper substrates as well as in conventional Si electronics. The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.
Resistive Random Access Memory Rram
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Author : Shimeng Yu
language : en
Publisher: Springer Nature
Release Date : 2022-06-01
Resistive Random Access Memory Rram written by Shimeng Yu and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-06-01 with Technology & Engineering categories.
RRAM technology has made significant progress in the past decade as a competitive candidate for the next generation non-volatile memory (NVM). This lecture is a comprehensive tutorial of metal oxide-based RRAM technology from device fabrication to array architecture design. State-of-the-art RRAM device performances, characterization, and modeling techniques are summarized, and the design considerations of the RRAM integration to large-scale array with peripheral circuits are discussed. Chapter 2 introduces the RRAM device fabrication techniques and methods to eliminate the forming process, and will show its scalability down to sub-10 nm regime. Then the device performances such as programming speed, variability control, and multi-level operation are presented, and finally the reliability issues such as cycling endurance and data retention are discussed. Chapter 3 discusses the RRAM physical mechanism, and the materials characterization techniques to observe the conductive filaments and the electrical characterization techniques to study the electronic conduction processes. It also presents the numerical device modeling techniques for simulating the evolution of the conductive filaments as well as the compact device modeling techniques for circuit-level design. Chapter 4 discusses the two common RRAM array architectures for large-scale integration: one-transistor-one-resistor (1T1R) and cross-point architecture with selector. The write/read schemes are presented and the peripheral circuitry design considerations are discussed. Finally, a 3D integration approach is introduced for building ultra-high density RRAM array. Chapter 5 is a brief summary and will give an outlook for RRAM’s potential novel applications beyond the NVM applications.
Ferroelectricity In Doped Hafnium Oxide
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Author : Uwe Schroeder
language : en
Publisher: Woodhead Publishing
Release Date : 2019-03-27
Ferroelectricity In Doped Hafnium Oxide written by Uwe Schroeder and has been published by Woodhead Publishing this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-03-27 with Technology & Engineering categories.
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized. Explores all aspects of the structural and electrical properties of HfO2, including processes, modelling and implementation into semiconductor devices Considers potential applications including FeCaps, FeFETs, NCFETs, FTJs and more Provides comparison of an emerging ferroelectric material to conventional ferroelectric materials with insights to the problems of downscaling that conventional ferroelectrics face
Atomic Layer Deposition For Semiconductors
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Author : Cheol Seong Hwang
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-10-18
Atomic Layer Deposition For Semiconductors written by Cheol Seong Hwang and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-10-18 with Science categories.
Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.
Nanoscale Transistors
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Author : Mark Lundstrom
language : en
Publisher: Springer Science & Business Media
Release Date : 2006-06-18
Nanoscale Transistors written by Mark Lundstrom and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006-06-18 with Technology & Engineering categories.
To push MOSFETs to their scaling limits and to explore devices that may complement or even replace them at molecular scale, a clear understanding of device physics at nanometer scale is necessary. Nanoscale Transistors provides a description on the recent development of theory, modeling, and simulation of nanotransistors for electrical engineers, physicists, and chemists working on nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors. After basic concepts are reviewed, the text summarizes the essentials of traditional semiconductor devices, digital circuits, and systems to supply a baseline against which new devices can be assessed. A nontraditional view of the MOSFET using concepts that are valid at nanoscale is developed and then applied to nanotube FET as an example of how to extend the concepts to revolutionary nanotransistors. This practical guide then explore the limits of devices by discussing conduction in single molecules
Emerging Non Volatile Memories
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Author : Seungbum Hong
language : en
Publisher: Springer
Release Date : 2014-11-18
Emerging Non Volatile Memories written by Seungbum Hong and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-11-18 with Technology & Engineering categories.
This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory. This book also: Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others. Provides an overview of non-volatile memory fundamentals. Broadens readers’ understanding of future trends in non-volatile memories.