Ferroelectricity In Doped Hafnium Oxide
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Ferroelectricity In Doped Hafnium Oxide
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Author : Uwe Schroeder
language : en
Publisher: Woodhead Publishing
Release Date : 2019-03-27
Ferroelectricity In Doped Hafnium Oxide written by Uwe Schroeder and has been published by Woodhead Publishing this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-03-27 with Technology & Engineering categories.
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized. Explores all aspects of the structural and electrical properties of HfO2, including processes, modelling and implementation into semiconductor devices Considers potential applications including FeCaps, FeFETs, NCFETs, FTJs and more Provides comparison of an emerging ferroelectric material to conventional ferroelectric materials with insights to the problems of downscaling that conventional ferroelectrics face
Electrical Characterisation Of Ferroelectric Field Effect Transistors Based On Ferroelectric Hfo2 Thin Films
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Author : Ekaterina Yurchuk
language : en
Publisher: Logos Verlag Berlin GmbH
Release Date : 2015-06-30
Electrical Characterisation Of Ferroelectric Field Effect Transistors Based On Ferroelectric Hfo2 Thin Films written by Ekaterina Yurchuk and has been published by Logos Verlag Berlin GmbH this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015-06-30 with categories.
Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric material (silicon doped hafnium oxide) were studied within the scope of the present work. Utilisation of silicon doped hafnium oxide (Si:HfO2 thin films instead of conventional perovskite ferroelectrics as a functional layer in FeFETs provides compatibility to the CMOS process as well as improved device scalability. The influence of different process parameters on the properties of Si:HfO2 thin films was analysed in order to gain better insight into the occurrence of ferroelectricity in this system. A subsequent examination of the potential of this material as well as its possible limitations with the respect to the application in non-volatile memories followed. The Si:HfO2-based ferroelectric transistors that were fully integrated into the state-of-the-art high-k metal gate CMOS technology were studied in this work for the first time. The memory performance of these devices scaled down to 28 nm gate length was investigated. Special attention was paid to the charge trapping phenomenon shown to significantly affect the device behaviour.
Ferroelectric Thin Films
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Author : Masanori Okuyama
language : en
Publisher: Springer Science & Business Media
Release Date : 2005-02-22
Ferroelectric Thin Films written by Masanori Okuyama and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005-02-22 with Computers categories.
Ferroelectric thin films continue to attract much attention due to their developing applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties of these materials and the associated device physics. The contributing authors are acknowledged experts in the field.
Ferroelectric Gate Field Effect Transistor Memories
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Author : Byung-Eun Park
language : en
Publisher: Springer Nature
Release Date : 2020-03-23
Ferroelectric Gate Field Effect Transistor Memories written by Byung-Eun Park and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2020-03-23 with Technology & Engineering categories.
This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims the ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide the readers with development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass, plastic or paper substrates as well as in conventional Si electronics. The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.
Formation Of Ferroelectricity In Hafnium Oxide Based Thin Films
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Author : Tony Schenk
language : en
Publisher: BoD – Books on Demand
Release Date : 2017-03-15
Formation Of Ferroelectricity In Hafnium Oxide Based Thin Films written by Tony Schenk and has been published by BoD – Books on Demand this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-03-15 with Technology & Engineering categories.
In 2011, Böscke et al. reported the unexpected discovery of ferroelectric properties in hafnia based thin films, which has since initiated many further studies and revitalized research on the topic of ferroelectric memories. In spite of many efforts, the unveiling of the fundamentals behind this surprising discovery has proven rather challenging. In this work, the originally claimed Pca21 phase is experimentally proven to be the root of the ferroelectric properties and the nature of this ferroelectricity is classified in the frame of existing concepts of ferroelectric materials. Parameters to stabilize this polar phase are examined from a theoretical and fabrication point of view. With these very basic questions addressed, the application relevant electric field cycling behavior is studied. The results of first-order reversal curves, impedance spectroscopy, scanning transmission electron microscopy and piezoresponse force microscopy significantly advance the understanding of structural mechanisms underlying wake-up, fatigue and the novel phenomenon of split-up/merging of transient current peaks. The impact of field cycling behavior on applications like ferroelectric memories is highlighted and routes to optimize it are derived. These findings help to pave the road for a successful commercialization of hafnia based ferroelectrics.
Metal Oxides For Non Volatile Memory
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Author : Panagiotis Dimitrakis
language : en
Publisher: Elsevier
Release Date : 2022-03-01
Metal Oxides For Non Volatile Memory written by Panagiotis Dimitrakis and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-03-01 with Technology & Engineering categories.
Metal Oxides for Non-volatile Memory: Materials, Technology and Applications covers the technology and applications of metal oxides (MOx) in non-volatile memory (NVM) technology. The book addresses all types of NVMs, including floating-gate memories, 3-D memories, charge-trapping memories, quantum-dot memories, resistance switching memories and memristors, Mott memories and transparent memories. Applications of MOx in DRAM technology where they play a crucial role to the DRAM evolution are also addressed. The book offers a broad scope, encompassing discussions of materials properties, deposition methods, design and fabrication, and circuit and system level applications of metal oxides to non-volatile memory. Finally, the book addresses one of the most promising materials that may lead to a solution to the challenges in chip size and capacity for memory technologies, particular for mobile applications and embedded systems. Systematically covers metal oxides materials and their properties with memory technology applications, including floating-gate memory, 3-D memory, memristors, and much more Provides an overview on the most relevant deposition methods, including sputtering, CVD, ALD and MBE Discusses the design and fabrication of metal oxides for wide breadth of non-volatile memory applications from 3-D flash technology, transparent memory and DRAM technology
Negative Capacitance In Ferroelectric Materials
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Author : Michael Hoffmann
language : en
Publisher: BoD – Books on Demand
Release Date : 2020-09-15
Negative Capacitance In Ferroelectric Materials written by Michael Hoffmann and has been published by BoD – Books on Demand this book supported file pdf, txt, epub, kindle and other format this book has been release on 2020-09-15 with Technology & Engineering categories.
This dissertation investigates the phenomenon of negative capacitance in ferroelectric materials, which is promising for overcoming the fundamental limits of energy efficiency in electronics. The focus of this dissertation is on negative capacitance in hafnium oxide based ferroelectrics and the impact of ferroelectric domain formation.
Principles And Applications Of Ferroelectrics And Related Materials
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Author : M. E. Lines
language : en
Publisher: Oxford University Press
Release Date : 2001-02
Principles And Applications Of Ferroelectrics And Related Materials written by M. E. Lines and has been published by Oxford University Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2001-02 with Science categories.
This is a standard work on ferroelectrics.
Oxide Electronics
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Author : Asim K. Ray
language : en
Publisher: John Wiley & Sons
Release Date : 2021-04-12
Oxide Electronics written by Asim K. Ray and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021-04-12 with Technology & Engineering categories.
Oxide Electronics Multiple disciplines converge in this insightful exploration of complex metal oxides and their functions and properties Oxide Electronics delivers a broad and comprehensive exploration of complex metal oxides designed to meet the multidisciplinary needs of electrical and electronic engineers, physicists, and material scientists. The distinguished author eschews complex mathematics whenever possible and focuses on the physical and functional properties of metal oxides in each chapter. Each of the sixteen chapters featured within the book begins with an abstract and an introduction to the topic, clear explanations are presented with graphical illustrations and relevant equations throughout the book. Numerous supporting references are included, and each chapter is self-contained, making them perfect for use both as a reference and as study material. Readers will learn how and why the field of oxide electronics is a key area of research and exploitation in materials science, electrical engineering, and semiconductor physics. The book encompasses every application area where the functional and electronic properties of various genres of oxides are exploited. Readers will also learn from topics like: Thorough discussions of High-k gate oxide for silicon heterostructure MOSFET devices and semiconductor-dielectric interfaces An exploration of printable high-mobility transparent amorphous oxide semiconductors Treatments of graphene oxide electronics, magnetic oxides, ferroelectric oxides, and materials for spin electronics Examinations of the calcium aluminate binary compound, perovoksites for photovoltaics, and oxide 2Degs Analyses of various applications for oxide electronics, including data storage, microprocessors, biomedical devices, LCDs, photovoltaic cells, TFTs, and sensors Suitable for researchers in semiconductor technology or working in materials science, electrical engineering, and physics, Oxide Electronics will also earn a place in the libraries of private industry researchers like device engineers working on electronic applications of oxide electronics. Engineers working on photovoltaics, sensors, or consumer electronics will also benefit from this book.
Development And Investigation Of Novel Logic In Memory And Nonvolatile Logic Circuits Utilizing Hafnium Oxide Based Ferroelectric Field Effect Transistors
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Author : Evelyn Tina Breyer
language : en
Publisher: BoD – Books on Demand
Release Date : 2022-02-08
Development And Investigation Of Novel Logic In Memory And Nonvolatile Logic Circuits Utilizing Hafnium Oxide Based Ferroelectric Field Effect Transistors written by Evelyn Tina Breyer and has been published by BoD – Books on Demand this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-02-08 with Technology & Engineering categories.
Not only conventional computer architectures, such as the von-Neumann architecture with its inevitable von-Neumann bottleneck, but likewise the emerging field of edge computing require to substantially decrease the spatial separation of logic and memory units to overcome power and latency shortages. The integration of logic operations into memory units (Logic-in-Memory), as well as memory elements into logic circuits (Nonvolatile Logic), promises to fulfill this request by combining high-speed with low-power operation. Ferroelectric field-effect transistors (FeFETs) based on hafnium oxide prove to be auspicious candidates for the memory elements in applications of that kind, as those nonvolatile memory elements are CMOS-compatible and likewise scalable. This work presents implementations that merge logic and memory by exploiting the natural capability of the FeFET to combine logic functionality (transistor) and memory ability (nonvolatility).