Diffusion In Silicon
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Diffusion In Silicon
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Author : Fred H. Wohlbier
language : en
Publisher: Trans Tech Publications Ltd
Release Date : 1986-01-01
Diffusion In Silicon written by Fred H. Wohlbier and has been published by Trans Tech Publications Ltd this book supported file pdf, txt, epub, kindle and other format this book has been release on 1986-01-01 with Technology & Engineering categories.
Defect and Diffusion Forum Vol. 47
Diffusion In Silicon A Seven Year Retrospective
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Author : David J. Fisher
language : en
Publisher: Trans Tech Publications Ltd
Release Date : 2005-07-15
Diffusion In Silicon A Seven Year Retrospective written by David J. Fisher and has been published by Trans Tech Publications Ltd this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005-07-15 with Technology & Engineering categories.
This collection of abstracts of experimental and theoretical papers on the subject of diffusion in silicon is intended to complement earlier volumes (DDF153-155) which covered the previous decades work on the same topic. The abstracts are grouped according to the diffusing species in question. The latter comprise Ag, Al, As, Au, B, Ba, Be, C, Ca, Cl, Co, Cr, Cu, Er, F, Fe, Ge, H, He, Hf, In, Ir, K, Mg, Mn, Mo, N, Na, Nb, Ni, O, P, Pb, Pt, Rb, Sb, Se, Si, SiH3, Sn, Ti, V, Yb and Zn with regard to bulk diffusion, Ag, Au, Ba, Cl, Cu, Er, F, Ga, Ge, In, O, Pb, Sb, Si, SiH3, Sn and Y with regard to surface diffusion, H with regard to grain-boundary diffusion, and self-diffusion in liquid Si.
Intrinsic Point Defects Impurities And Their Diffusion In Silicon
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Author : Peter Pichler
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Intrinsic Point Defects Impurities And Their Diffusion In Silicon written by Peter Pichler and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.
This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.
Diffusivity In Silicon 1953 To 2009
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Author : David J. Fisher
language : en
Publisher: Trans Tech Publications Ltd
Release Date : 2010-04-21
Diffusivity In Silicon 1953 To 2009 written by David J. Fisher and has been published by Trans Tech Publications Ltd this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010-04-21 with Technology & Engineering categories.
This work is essentially an update of previous compilations of information on the diffusivity of elements in semiconductor-grade silicon. It subsumes the data contained in B.L.Sharmas monograph on Diffusion in Semiconductors (Trans Tech Publications, 1970), plus the data contained in Diffusion and Defect Data (Diffusion in Silicon) Volume 45 (1986), Defect and Diffusion Forum (Diffusion in Silicon - 10 years of Research) Volumes 153-155 (1998), Defect and Diffusion Forum (Diffusion in Silicon - a Seven-Year Retrospective) Volume 241 (2005) and the latest data from recent Semiconductor Retrospectives: Defect and Diffusion Forum, Volumes 245-246, Volumes 261-262, Volume 272 and Volume 282. In addition, the resultant 400 items of data were analysed in the hope of finding some unifying correlation. It was indeed found that all of the points (each the average of many independent measurements) seemed to fall on a number of distinct straight lines passing through the origin of a plot of activation energy versus atomic radius. However, it remained unclear how these correlations could be explained.
Diffusion In Silicon
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Author : D. J. Fisher
language : en
Publisher: Trans Tech Publication
Release Date : 1998
Diffusion In Silicon written by D. J. Fisher and has been published by Trans Tech Publication this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998 with Technology & Engineering categories.
This volume presents a thorough treatment of the subject, covering a full decade of progress in the understanding of Diffusion in Silicon.
Diffusion In Silicon
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Author :
language : en
Publisher:
Release Date : 1986
Diffusion In Silicon written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1986 with categories.
Diffusion In Semiconductors Other Than Silicon Compilation
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Author : David J. Fisher
language : en
Publisher: Trans Tech Publications Ltd
Release Date : 2011-02-21
Diffusion In Semiconductors Other Than Silicon Compilation written by David J. Fisher and has been published by Trans Tech Publications Ltd this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011-02-21 with Technology & Engineering categories.
Defect and Diffusion Forum Vol. 308
Atomic Diffusion In Semiconductors
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Author : D. Shaw
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Atomic Diffusion In Semiconductors written by D. Shaw and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Science categories.
The diffusion or migration of atoms in matter, of whatever form, is a basic consequence of the existence of atoms. In metals, atomic diffusion has a well established position of importance as it is recognized that there are few metallurgical processes which do not embody the diffusion of one or more of the constituents. As regards semiconductors any thermal annealing treatment involves atomic diffusion. In semiconductor technology diffusion processes provide a vital and basic means of fabricating doped structures. Notwithstanding the importance of diffusion in the preparative processes of semiconductor structures and samples, the diffusion based aspects have acquired an empirical outlook verging almost on alchemy. The first attempt to present a systematic account of semiconductor diffusion processes was made by Boltaks [11 in 1961. During the decade since Boltaks' book appeared much work germane to understanding the atomic mechanisms responsible for diffusion in semiconductors has been published. The object of the present book is to give an account of, and to consolidate, present knowledge of semiconductor diffusion in terms of basic concepts of atomic migration in crystalline lattices. To this end, exhaustive compilations of empirical data have been avoided as these are available elsewhere [2, 31 : attention has been limited to considering evidence capable of yielding insight into the physical processes concerned in atomic diffusion.
Coupled Diffusion Of Impurity Atoms And Point Defects In Silicon Crystals
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Author : Oleg Velichko
language : en
Publisher: World Scientific
Release Date : 2019-11-05
Coupled Diffusion Of Impurity Atoms And Point Defects In Silicon Crystals written by Oleg Velichko and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-11-05 with Technology & Engineering categories.
This work presents a comprehensive theory describing atomic diffusion in silicon crystals under strong nonequilibrium conditions caused by ion implantation and interaction with the surface or other interfaces. A set of generalized equations that describe diffusion of impurity atoms and point defects are presented in a form suitable for solving numerically. Based on this theory, partial diffusion models are constructed, and the simulation of many doping processes used in microelectronics is carried out.Coupled Diffusion of Impurity Atoms and Point Defects in Silicon Crystals is a useful text for researchers, engineers, and advanced students in semiconductor physics, microelectronics, and nanoelectronics. It helps readers acquire a deep understanding of the physics of diffusion and demonstrates the practical application of the theoretical ideas formulated to find cheaper solutions in the course of manufacturing semiconductor devices and integrated microcircuits.
Diffusion In Silicon Isotope Heterostructures
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Author :
language : en
Publisher:
Release Date : 2004
Diffusion In Silicon Isotope Heterostructures written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004 with categories.
The simultaneous diffusion of Si and the dopants B, P, and As has been studied by the use of a multilayer structure of isotopically enriched Si. This structure, consisting of 5 pairs of 120 nm thick natural Si and 28Si enriched layers, enables the observation of 3°Si self-diffusion from the natural layers into the 28Si enriched layers, as well as dopant diffusion from an implanted source in an amorphous Si cap layer, via Secondary Ion Mass Spectrometry (SIMS). The dopant diffusion created regions of the multilayer structure that were extrinsic at the diffusion temperatures. In these regions, the Fermi level shift due to the extrinsic condition altered the concentration and charge state of the native defects involved in the diffusion process, which affected the dopant and self-diffusion. The simultaneously recorded diffusion profiles enabled the modeling of the coupled dopant and self-diffusion. From the modeling of the simultaneous diffusion, the dopant diffusion mechanisms, the native defect charge states, and the self- and dopant diffusion coefficients can be determined. This information is necessary to enhance the physical modeling of dopant diffusion in Si. It is of particular interest to the modeling of future electronic Si devices, where the nanometer-scale features have created the need for precise physical models of atomic diffusion in Si. The modeling of the experimental profiles of simultaneous diffusion of B and Si under p-type extrinsic conditions revealed that both species are mediated by neutral and singly, positively charged Si self-interstitials. The diffusion of As and Si under extrinsic n-type conditions yielded a model consisting of the interstitialcy and vacancy mechanisms of diffusion via singly negatively charged self-interstitials and neutral vacancies. The simultaneous diffusion of P and Si has been modeled on the basis of neutral and singly negatively charged self-interstitials and neutral and singly positively charged P species. Additionally, the temperature dependence of the diffusion coefficient of Si in Ge was measured over the temperature range of 550 C to 900 C using a buried Si layer in an epitaxially grown Ge layer.