Dynamic Threshold Mosfets For Future Integrated Circuits
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Dynamic Threshold Mosfets For Future Integrated Circuits
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Author : Stephen Hsien-Shun Tang
language : en
Publisher:
Release Date : 2001
Dynamic Threshold Mosfets For Future Integrated Circuits written by Stephen Hsien-Shun Tang and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2001 with categories.
Iccce 2021
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Author : Amit Kumar
language : en
Publisher: Springer Nature
Release Date : 2022-05-15
Iccce 2021 written by Amit Kumar and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-05-15 with Technology & Engineering categories.
This book is a collection of research articles presented at the 4th International Conference on Communications and Cyber-Physical Engineering (ICCCE 2021), held on April 9 and 10, 2021, at CMR Engineering College, Hyderabad, India. ICCCE is one of the most prestigious conferences conceptualized in the field of networking and communication technology offering in-depth information on the latest developments in voice, data, image, and multimedia. Discussing the latest developments in voice and data communication engineering, cyber-physical systems, network science, communication software, image, and multimedia processing research and applications, as well as communication technologies and other related technologies, it includes contributions from both academia and industry. This book is a valuable resource for scientists, research scholars, and PG students working to formulate their research ideas and find the future directions in these areas. Further, it may serve as a reference work to understand the latest engineering and technologies used by practicing engineers in the field of communication engineering.
Nanofabrication Technologies And Novel Device Structures For Nanoscale Cmos
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Author : Yang-Kyu Choi
language : en
Publisher:
Release Date : 2001
Nanofabrication Technologies And Novel Device Structures For Nanoscale Cmos written by Yang-Kyu Choi and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2001 with categories.
Frontiers In Electronics From Materials To Systems 1999 Workshop On Frontiers In Electronics
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Author : Serge Luryi
language : en
Publisher: World Scientific
Release Date : 2000-08-07
Frontiers In Electronics From Materials To Systems 1999 Workshop On Frontiers In Electronics written by Serge Luryi and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000-08-07 with Technology & Engineering categories.
The rapid pace of the electronic technology evolution compels a merger of technical areas such as low-power digital electronics, microwave power circuits, optoelectronics, etc., which collectively have become the foundation of today's electronic technology. The 1999 Workshop on Frontiers in Electronics gathered experts from academia, industry, and government agencies to review the recent exciting breakthroughs and their underlying physical mechanisms. The proceedings addresses controversial issues, provocative views, and visionary outlooks. Also included are discussions on the future trends, the directions of electronics technology and the market pulls, as well as the necessary policy and infrastructure changes.
Soi Circuit Design Concepts
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Author : Kerry Bernstein
language : en
Publisher: Springer Science & Business Media
Release Date : 2007-09-18
Soi Circuit Design Concepts written by Kerry Bernstein and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007-09-18 with Technology & Engineering categories.
This book first introduces SOI device physics and its fundamental idiosyncrasies. It then walks the reader through realizations of these mechanisms, which are observed in common high-speed microprocessor designs. The book also offers rules of thumb and comparisons to conventional bulk CMOS to guide implementation and describes a number of unique circuit topologies that SOI supports.
Semiconductor Devices And Technologies For Future Ultra Low Power Electronics
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Author : D. Nirmal
language : en
Publisher: CRC Press
Release Date : 2021-12-09
Semiconductor Devices And Technologies For Future Ultra Low Power Electronics written by D. Nirmal and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021-12-09 with Technology & Engineering categories.
This book covers the fundamentals and significance of 2-D materials and related semiconductor transistor technologies for the next-generation ultra low power applications. It provides comprehensive coverage on advanced low power transistors such as NCFETs, FinFETs, TFETs, and flexible transistors for future ultra low power applications owing to their better subthreshold swing and scalability. In addition, the text examines the use of field-effect transistors for biosensing applications and covers design considerations and compact modeling of advanced low power transistors such as NCFETs, FinFETs, and TFETs. TCAD simulation examples are also provided. FEATURES Discusses the latest updates in the field of ultra low power semiconductor transistors Provides both experimental and analytical solutions for TFETs and NCFETs Presents synthesis and fabrication processes for FinFETs Reviews details on 2-D materials and 2-D transistors Explores the application of FETs for biosensing in the healthcare field This book is aimed at researchers, professionals, and graduate students in electrical engineering, electronics and communication engineering, electron devices, nanoelectronics and nanotechnology, microelectronics, and solid-state circuits.
Dissertation Abstracts International
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Author :
language : en
Publisher:
Release Date : 2008
Dissertation Abstracts International written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008 with Dissertations, Academic categories.
Sige Ge And Related Compounds 4 Materials Processing And Devices
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Author : D. Harame
language : en
Publisher: The Electrochemical Society
Release Date : 2010-10
Sige Ge And Related Compounds 4 Materials Processing And Devices written by D. Harame and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010-10 with Science categories.
Advanced semiconductor technology is depending on innovation and less on "classical" scaling. SiGe, Ge, and Related Compounds has become a key component in the arsenal in improving semiconductor performance. This symposium discusses the technology to form these materials, process them, FET devices incorporating them, Surfaces and Interfaces, Optoelectronic devices, and HBT devices.
Future Trends In Microelectronics
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Author : Serge Luryi
language : en
Publisher: John Wiley & Sons
Release Date : 2013-06-13
Future Trends In Microelectronics written by Serge Luryi and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-06-13 with Technology & Engineering categories.
Leaders in the field predict the future of the microelectronics industry This seventh volume of Future Trends in Microelectronics summarizes and synthesizes the latest high-level scientific discussions to emerge from the Future Trends in Microelectronics international workshop, which has occurred every three years since 1995. It covers the full scope of cutting-edge topics in microelectronics, from new physical principles (quantum computing, correlated electrons), to new materials (piezoelectric nanostructures, terahertz plasmas), to emerging device technologies (embedded magnetic memories, spin lasers, and biocompatible microelectronics). An ideal book for microelectronics professionals and students alike, this volume of Future Trends in Microelectronics: Identifies the direction in which microelectronics is headed, enabling readers to move forward with research in an informed, efficient, and profitable manner Includes twenty-nine contributor chapters by international authorities from leading universities, major semiconductor companies, and government laboratories Provides a unified, cohesive exploration of various trends in microelectronics, looking to future opportunities, rather than past successes
Characterization And Modeling Of Soi Rf Integrated Components
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Author : Morin Dehan
language : en
Publisher: Presses univ. de Louvain
Release Date : 2003
Characterization And Modeling Of Soi Rf Integrated Components written by Morin Dehan and has been published by Presses univ. de Louvain this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003 with Science categories.
The boom of mobile communications leads to an increasing request of low cost and low power mixed mode integrated circuits. Maturity of SOI technology, and recent progresses of MOSFET's microwave performances, explain the success of silicon as compared to III-V technologies for low-cost multigigahertz analog applications. The design of efficient circuits requires accurate, wide-band models for both active and passive elements. Within this frame, passive and active components fabricated in SOI technologies have been studied. Various topologies of integrated transmission lines, like Coplanar Waveguides or thin film microstrip lines, have been analyzed. Also, a new physical model of integrated inductors has been developed. This model, based on a coupled line analysis of square spiral inductors, is scalable and independent of the technology used. Inductors with various spacing between strips, conductor widths, or number of turns can be simulated on different multi-layered substrates. Each layer that composes the substrate is defined using its electrical properties (permittivity, permeability, conductivity). The performances of integrated sub-micron MOSFETs are analyzed. New alternative structures of transistor (the Graded Channel MOSFET and the Dynamic Threshold MOSFET) are proposed to increase the performances of a CMOS technology for for analog, low power, low voltage, and microwave applications. They are studied from Low to High frequency. The graded channel MOSFET is an asymmetric doped channel MOSFET's which bring solutions for the problems of premature drain break-down, hot carrier effects, and threshold voltage (Vth) roll-off issues in deep submicrometer devices. The GCMOS processing is fully compatible with the conventional SOI MOSFET process flow, with no additional steps needed. The dynamic threshold voltage MOS is a MOS transistor for which the gate and the body channel are tied together. All DTMOS electrical properties can be deduced from standard MOS theory by introducing Vbs = Vgs. The main advantage of DTMOS over conventional MOS is its higher drive current at low bias conditions. To keep the body to source current as low as possible, the body bias voltage must be kept lower than 0.7 V. It seems obvious that the DTMOS transistor is an attractive component for low voltage applications.