Electrical Characteristics Of Mesfets And Hemts
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Electrical Characteristics Of Mesfets And Hemts
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Author : Moumita Bhoumik
language : en
Publisher: GRIN Verlag
Release Date : 2013-11-05
Electrical Characteristics Of Mesfets And Hemts written by Moumita Bhoumik and has been published by GRIN Verlag this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-11-05 with Technology & Engineering categories.
Master's Thesis from the year 2012 in the subject Electrotechnology, grade: 9.36, West Bengal University of Technology, course: M.TECH IN ADVANCE COMMUNICATION, language: English, abstract: Advanced developments that were made recently in the field of Silicon (Si) semiconductor technology have allowed it to approach the theoretical limits of the Si material. However there are latest power device requirements for many applications that cannot be handled by the present Si-based power devices. These requirements include such as higher blocking voltages, switching frequencies, efficiency, and reliability. And hence, new semiconductor materials for power device applications are needed to overcome these limitations. For high power requirements, wide bandgap semiconductors like Silicon Carbide (SiC) and Gallium Nitride (GaN) and Gallium Arsenide (GaAs), which are having superior electrical properties, are likely to replace Si in the near future. This Study thesis compares the electrical characteristics of wide-bandgap semiconductors with respect to Silicon (Si) to verify their superior utility for power applications and predicts the future of power device semiconductor materials. This thesis also includes the study that has been performed regarding the electrical characteristics of high frequency semiconductor devices in terms of I-V characteristics and Noise Power Spectral Density (PSD) Analysis with respect to drain current fluctuation in the semiconductor devices. The semiconductor devices that are used for this particular thesis are – Metal Effect Semiconductor Field Effect Transistors (MESFETs) and High Electron Mobility Transistors (HEMTs).
Electrical And Thermal Characterization Of Mesfets Hemts And Hbts
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Author : Robert Anholt
language : en
Publisher: Artech House Microwave Library
Release Date : 1995
Electrical And Thermal Characterization Of Mesfets Hemts And Hbts written by Robert Anholt and has been published by Artech House Microwave Library this book supported file pdf, txt, epub, kindle and other format this book has been release on 1995 with Science categories.
Encompassing three important technologies, this book explains why III-V transistor device electrical characteristics change with temperature, and develops models of the temperature change for use in integrated circuit design programs. You'll find a wealth of experimental S-equivalent-circuit parameter data on a wide variety of devices that has never before been presented, as well as learn how to measure S-parameters and fit equivalent circuits. Includes 200 equations and 181 illustrations.
The Studies Of Electrical Characteristics Of Mesfet Using Wbg Iii V Gan Potential Substrate Material
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Author : Sai Praneeth Thota
language : en
Publisher:
Release Date : 2016
The Studies Of Electrical Characteristics Of Mesfet Using Wbg Iii V Gan Potential Substrate Material written by Sai Praneeth Thota and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016 with categories.
The adoption of semiconductor materials has been marked up in the contemporary generation due to their tremendous strides being made in superconductors and amorphous material research. In this graduate thesis, the study of electrical characteristics of GaN Metal Semiconductor Field Effect Transistor (MESFET) has been conducted to evaluate the I-V characteristics by computing the linear and non-linear currents. An effort has been induced to combine the two sections of linear and non-linear currents to deliver more precise value of the channel current compared to the conventional channel current equation. Analysis of Power Spectral Density (PSD) has been performed with the variation of gatesource voltage and drain- source voltage. A comparison of PSD and frequency has been executed in order to anticipate the high frequency response.
Microwave Mesfets And Hemts
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Author : John Michael Golio
language : en
Publisher: Artech House Microwave Library
Release Date : 1991
Microwave Mesfets And Hemts written by John Michael Golio and has been published by Artech House Microwave Library this book supported file pdf, txt, epub, kindle and other format this book has been release on 1991 with Computers categories.
This book takes the reader from the basic operating principles of the microwave MESFET and HEMT to the application of device models in modern CAD programmes. In addition to explaining device operation and modelling, the book provides detailed specific algorithms which can be used to efficiently determine the parameters needed to utilize the available device models. Detailed comparisons of MESFET and HEMT performance are presented, and ultimate limitations to these devices are discussed.
Radiation Induced Degradation Of Electrical Characteristics Of Iii V Devices
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Author :
language : en
Publisher:
Release Date : 1904
Radiation Induced Degradation Of Electrical Characteristics Of Iii V Devices written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1904 with categories.
The effect of irradiation with gamma rays, electrons or neutrons on the dc and low frequency ac electrical characteristics of III-V FET devices has been studied in this work. The electrical parameters more sensitive to radiation damage have been identified and their behaviour has been compared among the different device types. Pseudomorphic HEMTs have been found to tolerate radiation exposures better than GaAs MESFETs and AlGaAs/GaAs HEMTs.
Fundamentals Of Iii V Devices
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Author : William Liu
language : en
Publisher: Wiley-Interscience
Release Date : 1999-04-07
Fundamentals Of Iii V Devices written by William Liu and has been published by Wiley-Interscience this book supported file pdf, txt, epub, kindle and other format this book has been release on 1999-04-07 with Technology & Engineering categories.
A systematic, accessible introduction to III-V semiconductor devices With this handy book, readers seeking to understand semiconductor devices based on III-V materials no longer have to wade through difficult review chapters focusing on a single, novel aspect of the technology. Well-known industry expert William Liu presents here a systematic, comprehensive treatment at an introductory level. Without assuming even a basic course in device physics, he covers the dc and high-frequency operations of all major III-V devices-heterojunction bipolar transistors (HBTs), metal-semiconductor field-effect transistors (MESFETs), and the heterojunction field-effect transistors (HFETs), which include the high electron mobility transistors (HEMTs). An excellent introduction for researchers and circuit designers working on wireless communications equipment, Fundamentals of III-V Devices offers a variety of features, including: * An introductory chapter on the basic properties, growth process, and device physics of III-V materials * Coverage of both dc and high-frequency models, integrating aspects of device physics and circuit design * A discussion of transistor fabrication and device comparison * 55 worked-out examples illustrating design considerations for a given application * 215 figures and end-of-chapter practice problems * Appendices listing parameters for various materials and transistor types
Microwave Field Effect Transistors
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Author : Raymond Sydney Pengelly
language : en
Publisher: Wiley-Blackwell
Release Date : 1986
Microwave Field Effect Transistors written by Raymond Sydney Pengelly and has been published by Wiley-Blackwell this book supported file pdf, txt, epub, kindle and other format this book has been release on 1986 with Technology & Engineering categories.
Large Signal Modeling Of Gan Hemts For Linear Power Amplifier Design
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Author : Endalkachew Shewarega Mengistu
language : en
Publisher: kassel university press GmbH
Release Date : 2008
Large Signal Modeling Of Gan Hemts For Linear Power Amplifier Design written by Endalkachew Shewarega Mengistu and has been published by kassel university press GmbH this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008 with categories.
Distributed Power Amplifiers For Rf And Microwave Communications
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Author : Narendra Kumar
language : en
Publisher: Artech House
Release Date : 2015-06-01
Distributed Power Amplifiers For Rf And Microwave Communications written by Narendra Kumar and has been published by Artech House this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015-06-01 with Technology & Engineering categories.
This new resource presents readers with all relevant information and comprehensive design methodology of wideband amplifiers. This book specifically focuses on distributed amplifiers and their main components, and presents numerous RF and microwave applications including well-known historical and recent architectures, theoretical approaches, circuit simulation, and practical implementation techniques. A great resource for practicing designers and engineers, this book contains numerous well-known and novel practical circuits, architectures, and theoretical approaches with detailed description of their operational principles.
Broadband Rf And Microwave Amplifiers
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Author : Andrei Grebennikov
language : en
Publisher: CRC Press
Release Date : 2017-07-12
Broadband Rf And Microwave Amplifiers written by Andrei Grebennikov and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-07-12 with Computers categories.
Broadband RF and Microwave Amplifiers provides extensive coverage of broadband radio frequency (RF) and microwave power amplifier design, including well-known historical and recent novel schematic configurations, theoretical approaches, circuit simulation results, and practical implementation strategies. The text begins by introducing two-port networks to illustrate the behavior of linear and nonlinear circuits, explaining the basic principles of power amplifier design, and discussing impedance matching and broadband power amplifier design using lumped and distributed parameters. The book then: Shows how dissipative or lossy gain-compensation-matching circuits can offer an important trade-off between power gain, reflection coefficient, and operating frequency bandwidth Describes the design of broadband RF and microwave amplifiers using real frequency techniques (RFTs), supplying numerous examples based on the MATLAB® programming process Examines Class-E power amplifiers, Doherty amplifiers, low-noise amplifiers, microwave gallium arsenide field-effect transistor (GaAs FET)-distributed amplifiers, and complementary metal-oxide semiconductor (CMOS) amplifiers for ultra-wideband (UWB) applications Broadband RF and Microwave Amplifiers combines theoretical analysis with practical design to create a solid foundation for innovative ideas and circuit design techniques.