Electrical And Thermal Characterization Of Mesfets Hemts And Hbts
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Electrical And Thermal Characterization Of Mesfets Hemts And Hbts
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Author : Robert Anholt
language : en
Publisher: Artech House Microwave Library
Release Date : 1995
Electrical And Thermal Characterization Of Mesfets Hemts And Hbts written by Robert Anholt and has been published by Artech House Microwave Library this book supported file pdf, txt, epub, kindle and other format this book has been release on 1995 with Science categories.
Encompassing three important technologies, this book explains why III-V transistor device electrical characteristics change with temperature, and develops models of the temperature change for use in integrated circuit design programs. You'll find a wealth of experimental S-equivalent-circuit parameter data on a wide variety of devices that has never before been presented, as well as learn how to measure S-parameters and fit equivalent circuits. Includes 200 equations and 181 illustrations.
Modeling And Characterization Of Rf And Microwave Power Fets
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Author : Peter Aaen
language : en
Publisher: Cambridge University Press
Release Date : 2007-06-25
Modeling And Characterization Of Rf And Microwave Power Fets written by Peter Aaen and has been published by Cambridge University Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007-06-25 with Technology & Engineering categories.
This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.
Nonlinear Design Fets And Hemts
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Author : Peter H. Ladbrooke
language : en
Publisher: Artech House
Release Date : 2021-11-30
Nonlinear Design Fets And Hemts written by Peter H. Ladbrooke and has been published by Artech House this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021-11-30 with Technology & Engineering categories.
Despite its continuing popularity, the so-called standard circuit model of compound semiconductor field-effect transistors (FETs) and high electron mobility transistors (HEMTs) is shown to have a limitation for nonlinear analysis and design: it is valid only in the static limit. When the voltages and currents are time-varying, as they must be for these devices to have any practical use, the model progressively fails for higher specification circuits. This book shows how to reform the standard model to render it fully compliant with the way FETs and HEMTs actually function, thus rendering it valid dynamically. Proof-of-principle is demonstrated for several practical circuits, including a frequency doubler and amplifiers with demanding performance criteria. Methods for extracting both the reformulated model and the standard model are described, including a scheme for re-constructing from S-parameters the bias-dependent dynamic (or RF) I(V) characteristics along which devices work in real-world applications, and as needed for the design of nonlinear circuits using harmonic-balance and time-domain simulators. The book includes a historical review of how variations on the standard model theme evolved, leading up to one of the most widely used—the Angelov (or Chalmers) model.
Large Signal Modeling Of Gan Hemts For Linear Power Amplifier Design
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Author : Endalkachew Shewarega Mengistu
language : en
Publisher: kassel university press GmbH
Release Date : 2008
Large Signal Modeling Of Gan Hemts For Linear Power Amplifier Design written by Endalkachew Shewarega Mengistu and has been published by kassel university press GmbH this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008 with categories.
Comprehensive Semiconductor Science And Technology
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Author :
language : en
Publisher: Newnes
Release Date : 2011-01-28
Comprehensive Semiconductor Science And Technology written by and has been published by Newnes this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011-01-28 with Technology & Engineering categories.
Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts
Microwave Physics And Techniques
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Author : H. Groll
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Microwave Physics And Techniques written by H. Groll and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.
Microwave Physics and Techniques discusses the modelling and application of nonlinear microwave circuits and the problems of microwave electrodynamics and applications of magnetic and high Tc superconductor structures. Aspects of advanced methods for the structural investigation of materials and of MW remote sensing are also considered. The dual focus on both HTSC MW device physics and MW excitation in ferrites and magnetic films will foster the interaction of specialists in these different fields.
Compound Semiconductor Electronics The Age Of Maturity
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Author : T W Crowe
language : en
Publisher: World Scientific
Release Date : 1996-11-26
Compound Semiconductor Electronics The Age Of Maturity written by T W Crowe and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 1996-11-26 with Science categories.
In many respects, compound semiconductor technology has reached the age of maturity when applications will have been defined, yields are high enough and well established, and gallium arsenide and related compounds have carved many important niches in electronics. This book reviews the state-of-the-art of compound semiconductor electronics. It covers the microwave, millimeter wave, and submillimeter wave devices, monolithic microwave and digital integrated circuits made from compound semiconductors and emerging wide band semiconductor materials. The book is written by leading experts in compound semiconductor electronics from industry and academia and strikes the balance between practical applications, record-breaking results, and design and modeling tools specific for compound semiconductor technology. Engineers, scientists, and graduate students working in solid state electronics and especially in the area of compound semiconductor electronics will find this book very useful. It could also be used as a text or a supplementary text for graduate courses in this field.
Rf And Microwave Oscillator Design
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Author : Michał Odyniec
language : en
Publisher: Artech House
Release Date : 2002
Rf And Microwave Oscillator Design written by Michał Odyniec and has been published by Artech House this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002 with Technology & Engineering categories.
This groundbreaking book is the first to present the state of the art in microwave oscillator design with an emphasis on new nonlinear methods. A compilation of pioneering work from experts in the field, it also provides rigorous theory and historical background. Invaluable for professionals at all levels of design expertise, this volume helps you to bridge the gap between design practice and new powerful design methods, learn all aspects of modern oscillator design and review practical designs and experimental results of fixed-frequency, high-Q, low-noise oscillators.
Rf And Microwave Passive And Active Technologies
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Author : Mike Golio
language : en
Publisher: CRC Press
Release Date : 2018-10-03
Rf And Microwave Passive And Active Technologies written by Mike Golio and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-10-03 with Technology & Engineering categories.
In the high frequency world, the passive technologies required to realize RF and microwave functionality present distinctive challenges. SAW filters, dielectric resonators, MEMS, and waveguide do not have counterparts in the low frequency or digital environment. Even when conventional lumped components can be used in high frequency applications, their behavior does not resemble that observed at lower frequencies. RF and Microwave Passive and Active Technologies provides detailed information about a wide range of component technologies used in modern RF and microwave systems. Updated chapters include new material on such technologies as MEMS, device packaging, surface acoustic wave (SAW) filters, bipolar junction and heterojunction transistors, and high mobility electron transistors (HMETs). The book also features a completely rewritten section on wide bandgap transistors.
Device And Circuit Cryogenic Operation For Low Temperature Electronics
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Author : Francis Balestra
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-11-11
Device And Circuit Cryogenic Operation For Low Temperature Electronics written by Francis Balestra and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-11-11 with Technology & Engineering categories.
Device and Circuit Cryogenic Operation for Low Temperature Electronics is a first in reviewing the performance and physical mechanisms of advanced devices and circuits at cryogenic temperatures that can be used for many applications. The first two chapters cover bulk silicon and SOI MOSFETs. The electronic transport in the inversion layer, the influence of impurity freeze-out, the special electrical properties of SOI structures, the device reliability and the interest of a low temperature operation for the ultimate integration of silicon down to nanometer dimensions are described. The next two chapters deal with Silicon-Germanium and III-V Heterojunction Bipolar Transistors, as well as III-V High Electron Mobility Transistors (HEMT). The basic physics of the SiGe HBT and its unique cryogenic capabilities, the optimization of such bipolar devices, and the performance of SiGe HBT BiCMOS technology at liquid nitrogen temperature are examined. The physical effects in III-V semiconductors at low temperature, the HEMT and HBT static, high frequency and noise properties, and the comparison of various cooled III-V devices are also addressed. The next chapter treats quantum effect devices made of silicon materials. The major quantum effects at low temperature, quantum wires, quantum dots as well as single electron devices and applications are investigated. The last chapter overviews the performances of cryogenic circuits and their applications. The low temperature properties and performance of inverters, multipliers, adders, operational amplifiers, memories, microprocessors, imaging devices, circuits and systems, sensors and read-out circuits are analyzed. Device and Circuit Cryogenic Operation for Low Temperature Electronics is useful for researchers, engineers, Ph.D. and M.S. students working in the field of advanced electron devices and circuits, new semiconductor materials, and low temperature electronics and physics.