Equivalent Circuit Model Of Quantum Mechanics
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Equivalent Circuit Model Of Quantum Mechanics
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Author : Masakazu Shoji
language : en
Publisher: iUniverse
Release Date : 2023-02-08
Equivalent Circuit Model Of Quantum Mechanics written by Masakazu Shoji and has been published by iUniverse this book supported file pdf, txt, epub, kindle and other format this book has been release on 2023-02-08 with Science categories.
In the year of 2020, I published a book in psychology, “Self-consciousness, human brain as data processor”. In the book, I proposed resolution of quantum mystery by human mind by providing a model. Quantum mechanics has been developed by the basic philosophy that the theory’s role is to identify the measurable quantum parameters and to provide the mathematical theory relating them. The model’s role is, if that is available, only secondary, to rationalize the theory. I challenged this basic philosophy in this book. Quantum mechanics cannot be modeled by using any classical mechanics model, but it can be modeled by using the equivalent circuit model of electronics. I worked out the most basic details of this model and explained several mysterious quantum phenomena.
Introduction To Nanoelectronic Single Electron Circuit Design
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Author : Jaap Hoekstra
language : en
Publisher: CRC Press
Release Date : 2016-10-14
Introduction To Nanoelectronic Single Electron Circuit Design written by Jaap Hoekstra and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-10-14 with Science categories.
Today, the concepts of single-electron tunneling (SET) are used to understand and model single-atom and single-molecule nanoelectronics. The characteristics of nanoelectronic devices, especially SET transistors, can be understood on the basis of the physics of nanoelectronic devices and circuit models. A circuit theory approach is necessary for considering possible integration with current microelectronic circuitry. To explain the properties and possibilities of SET devices, this book follows an approach to modeling these devices using electronic circuit theory. All models and equivalent circuits are derived from the first principles of circuit theory. Based on energy conservation, the circuit model of SET is an impulsive current source, and modeling distinguishes between bounded and unbounded currents. The Coulomb blockade is explained as a property of a single junction. In addition, this edition differs from the previous one by elaborating on the section on spice simulations and providing a spice simulation on the SET electron box circuit, including the spice netlist. Also, a complete, new proof of the two-capacitor problem in circuit theory is presented; the importance of this proof in understanding energy conservation in SET circuits cannot be underestimated. This book will be very useful for advanced undergraduate- and graduate-level students of electrical engineering and nanoelectronics and researchers in nanotechnology, nanoelectronic device physics, and computer science. Only book modeling both single-electron tunneling and many electron tunneling from the points of view of electronics; starting from experiments, via a physics description, working towards a circuit description; and based on energy conservation, in electrical circuits, developing the impulse circuit model for single-electron tunneling.
Iii V Microelectronics
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Author : J.P. Nougier
language : en
Publisher: Elsevier
Release Date : 2014-05-27
Iii V Microelectronics written by J.P. Nougier and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-05-27 with Technology & Engineering categories.
As is well known, Silicon widely dominates the market of semiconductor devices and circuits, and in particular is well suited for Ultra Large Scale Integration processes. However, a number of III-V compound semiconductor devices and circuits have recently been built, and the contributions in this volume are devoted to those types of materials, which offer a number of interesting properties. Taking into account the great variety of problems encountered and of their mutual correlations when fabricating a circuit or even a device, most of the aspects of III-V microelectronics, from fundamental physics to modelling and technology, from materials to devices and circuits are reviewed. Containing contributions from European researchers of international repute this volume is the definitive reference source for anyone interested in the latest advances and results of current experimental research in III-V microelectronics.
Principles Of Semiconductor Laser Diodes And Amplifiers Analysis And Transmission Line Laser Modeling
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Author : Hooshang Ghafouri-shiraz
language : en
Publisher: World Scientific
Release Date : 2003-12-15
Principles Of Semiconductor Laser Diodes And Amplifiers Analysis And Transmission Line Laser Modeling written by Hooshang Ghafouri-shiraz and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003-12-15 with Technology & Engineering categories.
Optical communications technology is growing increasingly in importance, with a rapid pace of development. Innovative optical devices have emerged from the integration of semiconductor laser diodes, amplifiers and filters with optical waveguide technology. This well-researched volume traces the evolution of semiconductor laser amplifiers (SLAs) from these technologies. Focusing on the principle applications of SLAs, the author illustrates the growing importance of these functional components in the future of optical communications systems.This book will provide engineering and science students with a basic understanding of laser diode and optical amplification through the analysis of the performance characteristics of these devices both in theory and application. Practising device engineers wishing to consolidate their knowledge in lightwave technology will also find this book an invaluable reference./a
Self Consciousness
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Author : Masakazu Shoji
language : en
Publisher: iUniverse
Release Date : 2020-02-24
Self Consciousness written by Masakazu Shoji and has been published by iUniverse this book supported file pdf, txt, epub, kindle and other format this book has been release on 2020-02-24 with Psychology categories.
A summary of author Masakazu Shoji’s previous works, Self-Consciousness: Human Brain as Data Processor, explains self-consciousness by using a simple, mechanical model of the human brain, which reflects its past development of evolution by natural selection. The model was built from the information acquired from the unbiased, introspective observation of Shoji’s own mind and other rational assumptions. In this study, geared for those with a background in the research and science of psychology, Shoji introduces a new approach based on systems and information science; it relies on the synthetic method of study by designing the human brain’s functional model. It deals with the self-conscious directly, without adding in subconsciousness or quantum mystery, as has been done previously. The model was designed realistically using hardware built with genetic instructions, using neurons as the elements of digital and analog operations. Shoji shares that versions of this model reveal how humans acquire and store memories of images of the outside objects, sense the images internally, execute necessary actions directed by the images, feel an emotional state by facing life’s events, and develop intelligence by accumulated experiences. The model also explains mysterious mental experiences, such as seeing dreams, daydreams, phantoms, ghosts, and feeling premonitions.
Semiconductor Device Modelling
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Author : Christopher M. Snowden
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Semiconductor Device Modelling written by Christopher M. Snowden and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.
Semiconductor device modelling has developed in recent years from being solely the domain of device physicists to span broader technological disciplines involved in device and electronic circuit design and develop ment. The rapid emergence of very high speed, high density integrated circuit technology and the drive towards high speed communications has meant that extremely small-scale device structures are used in contempor ary designs. The characterisation and analysis of these devices can no longer be satisfied by electrical measurements alone. Traditional equivalent circuit models and closed-form analytical models cannot always provide consis tently accurate results for all modes of operation of these very small devices. Furthermore, the highly competitive nature of the semiconductor industry has led to the need to minimise development costs and lead-time associated with introducing new designs. This has meant that there has been a greater demand for models capable of increasing our understanding of how these devices operate and capable of predicting accurate quantitative results. The desire to move towards computer aided design and expert systems has reinforced the need for models capable of representing device operation under DC, small-signal, large-signal and high frequency operation. It is also desirable to relate the physical structure of the device to the electrical performance. This demand for better models has led to the introduction of improved equivalent circuit models and a upsurge in interest in using physical models.
Sige And Ge
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Author : David Louis Harame
language : en
Publisher: The Electrochemical Society
Release Date : 2006
Sige And Ge written by David Louis Harame and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006 with Science categories.
The second International SiGe & Ge: Materials, Processing, and Devices Symposium was part of the 2006 ECS conference held in Cancun, Mexico from October 29-Nov 3, 2006. This meeting provided a forum for reviewing and discussing all materials and device related aspects of SiGe & Ge. The hardcover edition includes a bonus CD-ROM containing the PDF of the entire issue.
Compound Semiconductor Device Modelling
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Author : Christopher M. Snowden
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Compound Semiconductor Device Modelling written by Christopher M. Snowden and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Science categories.
Compound semiconductor devices form the foundation of solid-state microwave and optoelectronic technologies used in many modern communication systems. In common with their low frequency counterparts, these devices are often represented using equivalent circuit models, but it is often necessary to resort to physical models in order to gain insight into the detailed operation of compound semiconductor devices. Many of the earliest physical models were indeed developed to understand the 'unusual' phenomena which occur at high frequencies. Such was the case with the Gunn and IMPATI diodes, which led to an increased interest in using numerical simulation methods. Contemporary devices often have feature sizes so small that they no longer operate within the familiar traditional framework, and hot electron or even quantum mechanical models are required. The need for accurate and efficient models suitable for computer aided design has increased with the demand for a wider range of integrated devices for operation at microwave, millimetre and optical frequencies. The apparent complexity of equivalent circuit and physics-based models distinguishes high frequency devices from their low frequency counterparts . . Over the past twenty years a wide range of modelling techniques have emerged suitable for describing the operation of compound semiconductor devices. This book brings together for the first time the most popular techniques in everyday use by engineers and scientists. The book specifically addresses the requirements and techniques suitable for modelling GaAs, InP. ternary and quaternary semiconductor devices found in modern technology.
The Dynamics Of Digital Excitation
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Author : Masakazu Shoji
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
The Dynamics Of Digital Excitation written by Masakazu Shoji and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.
The electronic circuit is a proud child of twentieth century natural science. In a hundred short years it has developed to the point that it now enhances nearly every aspect of human life. Yet our basic understanding of electronic-circuit operation, electronic -circuittheory, has not made significant progress during the semiconductor industry's explosive growth from 1950s to the present. This is because the electronic circuit has never been considered to be a challenging research subject by physi cists. Linear passive circuit theory was established by the late 1940s. After the advent of the semiconductor electron devices, the interest of the technical community shifted away from circuit theory. Twenty years later, when integrated circuit technology began an explosive growth, cir cuit theory was again left behind in the shadow of rapidly progressing computer-aided design (CAD) technology. The present majority view is that electronic-circuit theory stands in a subordinate position to CAD and to device-processing technology. In 1950s and 1960s, several new semiconductor devices were invented every year, and each new device seemed to have some interesting funda mental physical mechanisms that appeared worth investigating. Com pared to attractive device physics, the problems of the semiconductor device circuit appeared less sophisticated and less attractive. Bright minds of the time drifted away from circuit theory to electron-device physics. After thirty years only one type of semiconductor device, the electron triode with several variations survived, whereas hundreds of them went into oblivion.
Nano Interconnect Materials And Models For Next Generation Integrated Circuit Design
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Author : Sandip Bhattacharya
language : en
Publisher: CRC Press
Release Date : 2023-12-22
Nano Interconnect Materials And Models For Next Generation Integrated Circuit Design written by Sandip Bhattacharya and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2023-12-22 with Technology & Engineering categories.
Aggressive scaling of device and interconnect dimensions has resulted in many low-dimensional issues in the nanometer regime. This book deals with various new-generation interconnect materials and interconnect modeling, and highlights the significance of novel nano-interconnect materials for 3D integrated circuit design. It provides information about advanced nanomaterials like carbon nanotube (CNT) and graphene nanoribbon (GNR) for the realization of interconnects, interconnect models, and crosstalk noise analysis. Features: • Focuses on materials and nanomaterials utilization in next-generation interconnects based on carbon nanotubes (CNT) and graphene nanoribbons (GNR). • Helps readers realize interconnects, interconnect models, and crosstalk noise analysis. • Describes hybrid CNT- and GNR-based interconnects. • Presents the details of power supply voltage drop analysis in CNT and GNR interconnects. • Overviews pertinent RF performance and stability analysis. This book is aimed at graduate students and researchers in electrical and materials engineering, and nano-/microelectronics.