Finfet Gaa Modeling For Ic Simulation And Design
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Finfet Modeling For Ic Simulation And Design
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Author : Yogesh Singh Chauhan
language : en
Publisher: Academic Press
Release Date : 2015-03-17
Finfet Modeling For Ic Simulation And Design written by Yogesh Singh Chauhan and has been published by Academic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015-03-17 with Technology & Engineering categories.
This book is the first to explain FinFET modeling for IC simulation and the industry standard – BSIM-CMG - describing the rush in demand for advancing the technology from planar to 3D architecture, as now enabled by the approved industry standard. The book gives a strong foundation on the physics and operation of FinFET, details aspects of the BSIM-CMG model such as surface potential, charge and current calculations, and includes a dedicated chapter on parameter extraction procedures, providing a step-by-step approach for the efficient extraction of model parameters. With this book you will learn: - Why you should use FinFET - The physics and operation of FinFET - Details of the FinFET standard model (BSIM-CMG) - Parameter extraction in BSIM-CMG - FinFET circuit design and simulation - Authored by the lead inventor and developer of FinFET, and developers of the BSIM-CM standard model, providing an experts' insight into the specifications of the standard - The first book on the industry-standard FinFET model - BSIM-CMG
Finfet Gaa Modeling For Ic Simulation And Design
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Author : Yogesh Singh Chauhan
language : en
Publisher: Elsevier
Release Date : 2024-08-23
Finfet Gaa Modeling For Ic Simulation And Design written by Yogesh Singh Chauhan and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2024-08-23 with Technology & Engineering categories.
FinFET/GAA Modeling for IC Simulation and Design: Using the BSIM-CMG Standard, Second Edition is the first to book to explain FinFET modeling for IC simulation and the industry standard – BSIM-CMG - describing the rush in demand for advancing the technology from planar to 3D architecture as now enabled by the approved industry standard. The book gives a strong foundation on the physics and operation of FinFET, details aspects of the BSIM-CMG model such as surface potential, charge and current calculations, and includes a dedicated chapter on parameter extraction procedures, thus providing a step-by-step approach for the efficient extraction of model parameters. With this book, users will learn Why you should use FinFET, The physics and operation of FinFET Details of the FinFET standard model (BSIM-CMG), Parameter extraction in BSIM-CMG FinFET circuit design and simulation, and more. - Authored by the lead inventor and developer of FinFET and developers of the BSIM-CMG standard model, providing an expert's insight into the specifications of the standard - A new edition of the original groundbreaking book on the industry-standard FinFET model—BSIM-CMGNew to This Edition - Includes a new chapter providing a comprehensive introduction to GAAFET, including motivations, device concepts, structure, benefits, and the industry standard GAAFET model - Covers the most recent developments in the BSIM-CMG model - Presents an updated RF modeling of FinFET using the BSIM-CMG model including parameter extraction - Includes a new chapter on cryogenic modeling
Bsim4 And Mosfet Modeling For Ic Simulation
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Author : Weidong Liu
language : en
Publisher: World Scientific
Release Date : 2011
Bsim4 And Mosfet Modeling For Ic Simulation written by Weidong Liu and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011 with Technology & Engineering categories.
This book presents the art of advanced MOSFET modeling for integrated circuit simulation and design. It provides the essential mathematical and physical analyses of all the electrical, mechanical and thermal effects in MOS transistors relevant to the operation of integrated circuits. Particular emphasis is placed on how the BSIM model evolved into the first ever industry standard SPICE MOSFET model for circuit simulation and CMOS technology development. The discussion covers the theory and methodology of how a MOSFET model, or semiconductor device models in general, can be implemented to be robust and efficient, turning device physics theory into a production-worthy SPICE simulation model. Special attention is paid to MOSFET characterization and model parameter extraction methodologies, making the book particularly useful for those interested or already engaged in work in the areas of semiconductor devices, compact modeling for SPICE simulation, and integrated circuit design.
Light Weight Steel And Aluminium Structures
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Author : P. Mäkeläinen
language : en
Publisher: Elsevier
Release Date : 1999-06-02
Light Weight Steel And Aluminium Structures written by P. Mäkeläinen and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 1999-06-02 with Technology & Engineering categories.
ICSAS '99 - The Fourth International Conference on Steel and Aluminium Structures was a sequel to ICSAS '87 held in Cardiff, UK, to ICSAS '91 held in Singapore and to ICSAS '95 held in Istanbul, Turkey. The objective of the conference was to provide a forum for the discussion of recent findings and developments in the design and construction of various types of steel and aluminium structures.The conference was concerned with the analysis, modelling and design of light-weight or slender structures in which the primary material is structural steel, stainless or aluminium. The structural analysis papers presented at the conference cover both static and dynamic behaviour, instability behaviour and long-term behaviour under hygrothermal effects. The results of the latest research and development of some new structural products were also presented at the conference. A total of 76 papers and 30 posters were presented at the conference by participants from 36 countries in all 6 continents.
Compact Modeling
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Author : Gennady Gildenblat
language : en
Publisher: Springer Science & Business Media
Release Date : 2010-06-22
Compact Modeling written by Gennady Gildenblat and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010-06-22 with Technology & Engineering categories.
Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.
Fundamentals Of Ultra Thin Body Mosfets And Finfets
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Author : Jerry G. Fossum
language : en
Publisher: Cambridge University Press
Release Date : 2013-08-29
Fundamentals Of Ultra Thin Body Mosfets And Finfets written by Jerry G. Fossum and has been published by Cambridge University Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-08-29 with Technology & Engineering categories.
Understand the theory, design and applications of the two principal candidates for the next mainstream semiconductor-industry device with this concise and clear guide to FD/UTB transistors. • Describes FD/SOI MOSFETs and 3-D FinFETs in detail • Covers short-channel effects, quantum-mechanical effects, applications of UTB devices to floating-body DRAM and conventional SRAM • Provides design criteria for nanoscale FinFET and nanoscale thin- and thick-BOX planar FD/SOI MOSFET to help reduce technology development time • Projects potential nanoscale UTB CMOS performances • Contains end-of-chapter exercises. For professional engineers in the CMOS IC field who need to know about optimal non-classical device design and integration, this is a must-have resource.
3d Tcad Simulation For Cmos Nanoeletronic Devices
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Author : Yung-Chun Wu
language : en
Publisher: Springer
Release Date : 2017-06-19
3d Tcad Simulation For Cmos Nanoeletronic Devices written by Yung-Chun Wu and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-06-19 with Technology & Engineering categories.
This book demonstrates how to use the Synopsys Sentaurus TCAD 2014 version for the design and simulation of 3D CMOS (complementary metal–oxide–semiconductor) semiconductor nanoelectronic devices, while also providing selected source codes (Technology Computer-Aided Design, TCAD). Instead of the built-in examples of Sentaurus TCAD 2014, the practical cases presented here, based on years of teaching and research experience, are used to interpret and analyze simulation results of the physical and electrical properties of designed 3D CMOSFET (metal–oxide–semiconductor field-effect transistor) nanoelectronic devices. The book also addresses in detail the fundamental theory of advanced semiconductor device design for the further simulation and analysis of electric and physical properties of semiconductor devices. The design and simulation technologies for nano-semiconductor devices explored here are more practical in nature and representative of the semiconductor industry, and as such can promote the development of pioneering semiconductor devices, semiconductor device physics, and more practically-oriented approaches to teaching and learning semiconductor engineering. The book can be used for graduate and senior undergraduate students alike, while also offering a reference guide for engineers and experts in the semiconductor industry. Readers are expected to have some preliminary knowledge of the field.
Bsim Bulk Mosfet Model For Ic Design Digital Analog Rf And High Voltage
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Author : Chenming Hu
language : en
Publisher: Elsevier
Release Date : 2023-04-26
Bsim Bulk Mosfet Model For Ic Design Digital Analog Rf And High Voltage written by Chenming Hu and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2023-04-26 with Technology & Engineering categories.
BSIM-Bulk MOSFET Model for IC Design - Digital, Analog, RF and High-Voltage provides in-depth knowledge of the internal operation of the model. The authors not only discuss the fundamental core of the model, but also provide details of the recent developments and new real-device effect models. In addition, the book covers the parameter extraction procedures, addressing geometrical scaling, temperatures, and more. There is also a dedicated chapter on extensive quality testing procedures and experimental results. This book discusses every aspect of the model in detail, and hence will be of significant use for the industry and academia. Those working in the semiconductor industry often run into a variety of problems like model non-convergence or non-physical simulation results. This is largely due to a limited understanding of the internal operations of the model as literature and technical manuals are insufficient. This also creates huge difficulty in developing their own IP models. Similarly, circuit designers and researcher across the globe need to know new features available to them so that the circuits can be more efficiently designed. - Reviews the latest advances in fabrication methods for metal chalcogenide-based biosensors - Discusses the parameters of biosensor devices to aid in materials selection - Provides readers with a look at the chemical and physical properties of reactive metals, noble metals, transition metals chalcogenides and their connection to biosensor device performance
Underground Infrastructures
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Author : R K Goel
language : en
Publisher: Butterworth-Heinemann
Release Date : 2012-05-07
Underground Infrastructures written by R K Goel and has been published by Butterworth-Heinemann this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-05-07 with Technology & Engineering categories.
Offers exposition of the classification of underground space, important considerations such as geological and engineering and underground planning. This title includes chapters concerning applications for underground water storage, underground car parks, underground metros and road tunnels and underground storage of crude oil, lpg and natural gas.
Finfets And Other Multi Gate Transistors
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Author : J.-P. Colinge
language : en
Publisher: Springer Science & Business Media
Release Date : 2008
Finfets And Other Multi Gate Transistors written by J.-P. Colinge and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008 with Technology & Engineering categories.
This book explains the physics and properties of multi-gate field-effect transistors (MuGFETs), how they are made and how circuit designers can use them to improve the performances of integrated circuits. It covers the emergence of quantum effects due to the reduced size of the devices and describes the evolution of the MOS transistor from classical structures to SOI (silicon-on-insulator) and then to MuGFETs.