Flat Panel Display Materials Ii Volume 424
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Flat Panel Display Materials Ii Volume 424
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Author : Miltiadis K. Hatalis
language : en
Publisher:
Release Date : 1997-02-12
Flat Panel Display Materials Ii Volume 424 written by Miltiadis K. Hatalis and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997-02-12 with Technology & Engineering categories.
The proceedings of a symposium held April 1996, in San Francisco, California. The field is experiencing a rapid growth which currently is expanding from portable computer applications to include display applications for desktop computers and a wide array of consumer and industrial products. Seventy-six contributions are divided into six sections covering amorphous silicon thin-film transistor materials, polycrystalline silicon thin-film transistor materials, liquid crystal display materials, transparent conducting oxides, field emission display materials, and other emissive display materials. Annotation copyrighted by Book News, Inc., Portland, OR
Flat Panel Display Materials
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Author :
language : en
Publisher:
Release Date : 1998
Flat Panel Display Materials written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998 with Information display devices categories.
Low Dielectric Constant Materials Ii Volume 443
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Author : André Lagendijk
language : en
Publisher:
Release Date : 1997-08-19
Low Dielectric Constant Materials Ii Volume 443 written by André Lagendijk and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997-08-19 with Technology & Engineering categories.
Low-dielectric constant materials are needed to improve the performance and speed of future integrated circuits. In fact, the diversity of contributors to this book is testimony to the global significance of the topic to the future of semiconductor manufacturing. Presentations include those by semiconductor equipment manufacturers and chemical source suppliers, academia from six countries, four government laboratories and five major device manufacturers. Approaches to designing and implementing reduction in dielectric constant for intermetal dielectric materials are featured and range from the evolution of silicon dioxide to fluorinated silicate glass, to the use of inorganic/organic polymers and spin-on-material, to fluorinated diamond-like carbon and nanoporous silica. The book also addresses the practical aspects of the use of low-dielectric constant materials such as chemical mechanical polishing of these materials and optimization of wiring delays in devices utilizing low-k material.
Silicon
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Author : Paul Siffert
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-03-09
Silicon written by Paul Siffert and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-03-09 with Technology & Engineering categories.
With topics ranging from epitaxy through lattice defects and doping to quantum computation, this book provides a personalized survey of the development and use of silicon, the basis for the revolutionary changes in our lives sometimes called "The Silicon Age." Beginning with the very first developments more than 50 years ago, this reports on all aspects of silicon and silicon technology up to its use in exciting new technologies, including a glance at possible future developments.
Defects In Electronic Materials Ii Volume 442
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Author : Jürgen Michel
language : en
Publisher:
Release Date : 1997-05-02
Defects In Electronic Materials Ii Volume 442 written by Jürgen Michel and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997-05-02 with Technology & Engineering categories.
The pervasive role of defects in determining the thermal, mechanical, electrical, optical and magnetic properties of materials is significant as is the knowledge and operation of generation and control of defects in electronic materials. Developing novel semiconductor materials, however, requires new insights into the role of defects to achieve new properties. New experimental techniques must be developed to study defects in small structures. Research groups come together in this book from MRS to provide a vivid picture of the current problems, progress and methods in defect studies in electronic materials. Topics include new techniques in defect studies; processing induced defects, plasma-induced point defects; processing induced defects -defects and gate-oxide integrity; point defects and reaction; point defects and interactions in Si; impurity diffusion and hydrogen in Si; dislocations in group IV semiconductors; point defects and defect interactions in SiGe; point defects in III-V compounds; compensation and structural defects in III-V compounds and layers and structures.
Rapid Thermal And Integrated Processing
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Author :
language : en
Publisher:
Release Date : 1998
Rapid Thermal And Integrated Processing written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998 with Rapid thermal processing categories.
Thermoelastic Generation Of Ultrasound For High Frequency Phased Arrays
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Author : Takashi Buma
language : en
Publisher:
Release Date : 2002
Thermoelastic Generation Of Ultrasound For High Frequency Phased Arrays written by Takashi Buma and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002 with categories.
Rare Earth Doped Semiconductors Ii Volume 422
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Author : S. Coffa
language : en
Publisher:
Release Date : 1996
Rare Earth Doped Semiconductors Ii Volume 422 written by S. Coffa and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1996 with Science categories.
Rare-earth doped semiconductors hold great potential for a variety of optoelectronic applications, including lasers, LEDs and optical amplifiers. In fact, the field has grown rapidly over the past several years, with a clear switch in direction. The first book by this name was devoted to rare-earth doped II-VI and III-V semiconductors; more than half of the papers in this new volume are devoted to rare-earth doped silicon. This indicates that rare-earth doping of silicon is now seriously considered as a means to achieve silicon-based optoelectronic devices. In addition, new reports on rare-earth doped III-nitrides are also presented. Researchers from 14 countries come together in the volume to discuss current trends, highlight new developments and identify potential electronic and optoelectronic applications. Topics include: incorporation methods and properties; structural, electrical and optical properties; excitation mechanisms and electroluminescence and integration.
Electron Emissive Materials Vacuum Microelectronics And Flat Panel Displays Volume 621
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Author : Kevin L. Jensen
language : en
Publisher:
Release Date : 2001-04-16
Electron Emissive Materials Vacuum Microelectronics And Flat Panel Displays Volume 621 written by Kevin L. Jensen and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2001-04-16 with Technology & Engineering categories.
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Interfacial Engineering For Optimized Properties Volume 458
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Author : Clyde L. Briant
language : en
Publisher:
Release Date : 1997-07-08
Interfacial Engineering For Optimized Properties Volume 458 written by Clyde L. Briant and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997-07-08 with Science categories.
The study of interfaces is one of the oldest areas of research in materials science. The presence of grain boundaries in materials has long been recognized, as has its crucial role in determining mechanical properties. Another long-recognized concept is that the properties of a surface are quite different from those of the bulk. In recent years, researchers have been able to study these interfaces, both internal and external, with a detail not before possible. These advances have stemmed from the ability to obtain atomic resolution images of interfaces, to measure accurate chemical compositions of interfaces, and to model these interfaces and their properties. This volume goes a step further, beyond structural and chemical studies, to explore how all of this information can be used to engineer interfaces for improved properties and overall improved material performance. Significant attention is given to the crystallographic nature of grain boundaries and interfaces, and the relationship between this nature and the performance of a material. The versatility of electron back-scattering pattern analysis (EBSP) in solving a number of interface-related problems is also featured.