Gaas And Related Materials
DOWNLOAD eBooks
Download Gaas And Related Materials PDF/ePub or read online books in Mobi eBooks. Click Download or Read Online button to get Gaas And Related Materials book now. This website allows unlimited access to, at the time of writing, more than 1.5 million titles, including hundreds of thousands of titles in various foreign languages. If the content not found or just blank you must refresh this page
Gaas And Related Materials
DOWNLOAD eBooks
Author : Sadao Adachi
language : en
Publisher: World Scientific
Release Date : 1994
Gaas And Related Materials written by Sadao Adachi and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 1994 with Technology & Engineering categories.
This book covers the various material properties of bulk GaAs and related materials, and aspects of the physics of artificial semiconductor microstructures, such as quantum wells and superlattices, made of these materials. A complete set of the material properties are considered in this book. They are structural properties; thermal properties; elastic and lattice vibronic properties; collective effects and some response characteristics; electronic energy-band structure and consequences; optical, elasto-optic, and electro-optic properties; and carrier transport properties. This book attempts to summarize, in graphical and tabular forms, most of the important theoretical and experimental results on these material properties. It contains a large number of references useful for further study. Timely topics are discussed as well. This book will be of interest to graduate students, scientists and engineers working on semiconductors.
Materials Aspects Of Gaas And Inp Based Structures
DOWNLOAD eBooks
Author : V. Swaminathan
language : en
Publisher:
Release Date : 1991
Materials Aspects Of Gaas And Inp Based Structures written by V. Swaminathan and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1991 with Technology & Engineering categories.
Discusses materials aspects of GaAs, InP and related alloys used in the fabricating of photonic and electronic devices. Coverage includes state-of-the-art materials growth and characterization; and physics and chemistry of point defects and dislocations, defects and device reliability.
Fabrication Of Gaas Devices
DOWNLOAD eBooks
Author : Albert G. Baca
language : en
Publisher: IET
Release Date : 2005-09
Fabrication Of Gaas Devices written by Albert G. Baca and has been published by IET this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005-09 with Technology & Engineering categories.
This book provides fundamental and practical information on all aspects of GaAs processing and gives pragmatic advice on cleaning and passivation, wet and dry etching and photolithography. Other topics covered include device performance for HBTs (Heterojunction Bipolar Transistors) and FETs (Field Effect Transistors), how these relate to processing choices, and special processing issues such as wet oxidation, which are especially important in optoelectronic devices. This book is suitable for both new and practising engineers.
Low Temperature Lt Gaas And Related Materials Volume 241
DOWNLOAD eBooks
Author : Gerald L. Witt
language : en
Publisher:
Release Date : 1992-07-15
Low Temperature Lt Gaas And Related Materials Volume 241 written by Gerald L. Witt and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1992-07-15 with Technology & Engineering categories.
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Gaas High Speed Devices
DOWNLOAD eBooks
Author : C. Y. Chang
language : en
Publisher: John Wiley & Sons
Release Date : 1994-10-28
Gaas High Speed Devices written by C. Y. Chang and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 1994-10-28 with Technology & Engineering categories.
The performance of high-speed semiconductor devices—the genius driving digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics—is inextricably linked to the unique physical and electrical properties of gallium arsenide. Once viewed as a novel alternative to silicon, gallium arsenide has swiftly moved into the forefront of the leading high-tech industries as an irreplaceable material in component fabrication. GaAs High-Speed Devices provides a comprehensive, state-of-the-science look at the phenomenally expansive range of engineering devices gallium arsenide has made possible—as well as the fabrication methods, operating principles, device models, novel device designs, and the material properties and physics of GaAs that are so keenly integral to their success. In a clear five-part format, the book systematically examines each of these aspects of GaAs device technology, forming the first authoritative study to consider so many important aspects at once and in such detail. Beginning with chapter 2 of part one, the book discusses such basic subjects as gallium arsenide materials and crystal properties, electron energy band structures, hole and electron transport, crystal growth of GaAs from the melt and defect density analysis. Part two describes the fabrication process of gallium arsenide devices and integrated circuits, shedding light, in chapter 3, on epitaxial growth processes, molecular beam epitaxy, and metal organic chemical vapor deposition techniques. Chapter 4 provides an introduction to wafer cleaning techniques and environment control, wet etching methods and chemicals, and dry etching systems, including reactive ion etching, focused ion beam, and laser assisted methods. Chapter 5 provides a clear overview of photolithography and nonoptical lithography techniques that include electron beam, x-ray, and ion beam lithography systems. The advances in fabrication techniques described in previous chapters necessitate an examination of low-dimension device physics, which is carried on in detail in chapter 6 of part three. Part four includes a discussion of innovative device design and operating principles which deepens and elaborates the ideas introduced in chapter 1. Key areas such as metal-semiconductor contact systems, Schottky Barrier and ohmic contact formation and reliability studies are examined in chapter 7. A detailed discussion of metal semiconductor field-effect transistors, the fabrication technology, and models and parameter extraction for device analyses occurs in chapter 8. The fifth part of the book progresses to an up-to-date discussion of heterostructure field-effect (HEMT in chapter 9), potential-effect (HBT in chapter 10), and quantum-effect devices (chapters 11 and 12), all of which are certain to have a major impact on high-speed integrated circuits and optoelectronic integrated circuit (OEIC) applications. Every facet of GaAs device technology is placed firmly in a historical context, allowing readers to see instantly the significant developmental changes that have shaped it. Featuring a look at devices still under development and device structures not yet found in the literature, GaAs High-Speed Devices also provides a valuable glimpse into the newest innovations at the center of the latest GaAs technology. An essential text for electrical engineers, materials scientists, physicists, and students, GaAs High-Speed Devices offers the first comprehensive and up-to-date look at these formidable 21st century tools. The unique physical and electrical properties of gallium arsenide has revolutionized the hardware essential to digital computers, advanced electronic systems for digital signal processing, telecommunication systems, and optoelectronics. GaAs High-Speed Devices provides the first fully comprehensive look at the enormous range of engineering devices gallium arsenide has made possible as well as the backbone of the technology—ication methods, operating principles, and the materials properties and physics of GaAs—device models and novel device designs. Featuring a clear, six-part format, the book covers: GaAs materials and crystal properties Fabrication processes of GaAs devices and integrated circuits Electron beam, x-ray, and ion beam lithography systems Metal-semiconductor contact systems Heterostructure field-effect, potential-effect, and quantum-effect devices GaAs Microwave Monolithic Integrated Circuits and Digital Integrated Circuits In addition, this comprehensive volume places every facet of the technology in an historical context and gives readers an unusual glimpse at devices still under development and device structures not yet found in the literature.
Properties Of Gallium Arsenide
DOWNLOAD eBooks
Author : M. R. Brozel
language : en
Publisher: Inst of Engineering & Technology
Release Date : 1996
Properties Of Gallium Arsenide written by M. R. Brozel and has been published by Inst of Engineering & Technology this book supported file pdf, txt, epub, kindle and other format this book has been release on 1996 with Technology & Engineering categories.
It was in 1986 that INSPEC (The Information Division of the Institution of Electrical Engineers) published the book Properties of Gallium Arsenide. Since then, major developments have taken place. This third edition is comprised of 150 specially commissioned articles contributed by experts from the USA, Europe and Japan.
The Mocvd Challenge
DOWNLOAD eBooks
Author : Manijeh Razeghi
language : en
Publisher: CRC Press
Release Date : 1995-01-01
The Mocvd Challenge written by Manijeh Razeghi and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1995-01-01 with Science categories.
The MOCVD Challenge: Volume 2, A Survey of GaInAsP-GaAs for Photonic and Electronic Device Applications focuses on GaAs systems and devices grown by MOCVD, specifically MOCVD growth of GaAs and related alloys and GaInP for photonic and electronic applications. Along with Volume 1, this book provides a personal account of the author's own pioneering
Physical Properties Of Iii V Semiconductor Compounds
DOWNLOAD eBooks
Author : Sadao Adachi
language : en
Publisher: John Wiley & Sons
Release Date : 1992-11-10
Physical Properties Of Iii V Semiconductor Compounds written by Sadao Adachi and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 1992-11-10 with Science categories.
The objective of this book is two-fold: to examine key properties of III-V compounds and to present diverse material parameters and constants of these semiconductors for a variety of basic research and device applications. Emphasis is placed on material properties not only of Inp but also of InAs, GaAs and GaP binaries.
Gallium Arsenide And Related Compounds Proceedings Of The 3rd International Workshop
DOWNLOAD eBooks
Author : Pier Giovanni Pelfer
language : en
Publisher: World Scientific
Release Date : 1996-02-09
Gallium Arsenide And Related Compounds Proceedings Of The 3rd International Workshop written by Pier Giovanni Pelfer and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 1996-02-09 with categories.
The subject of the workshop was the Gallium Arsenide and related compounds devices for Physics research and applications. The topics were the GaAs detectors for the experimental apparatus, the characterisation of the materials and the detectors, the GaAs electronics and optoelectronics, the radiation hardness and the x-ray detectors for x-ray imaging in medical applications. The purpose of the workshop was to discuss the status of the art of these fields in view of the construction of devices for the stringent demands imposed by the future Physics experiments and the applications in term of speed and radiation hardness.
Gallium Arsenide And Related Compounds 1991 Proceedings Of The Eighteenth Int Symposium 9 12 September 1991 Seattle Usa
DOWNLOAD eBooks
Author : Gerald B. Stringfellow
language : en
Publisher: CRC Press
Release Date : 2020-11-26
Gallium Arsenide And Related Compounds 1991 Proceedings Of The Eighteenth Int Symposium 9 12 September 1991 Seattle Usa written by Gerald B. Stringfellow and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2020-11-26 with Science categories.
Gallium Arsenide and Related Compounds 1991emphasizes current results on the materials, characterization, and device aspects of a broad range of semiconductor materials, particularly the III-V compounds and alloys. The book is a valuable reference for researchers in physics, materials science, and electronics and electrical engineering who work on III-V compounds.