Gallium Arsenide Technology
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Gallium Arsenide Technology
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Author :
language : en
Publisher:
Release Date : 1985
Gallium Arsenide Technology written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1985 with Gallium arsenide semiconductors categories.
Fabrication Of Gaas Devices
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Author : Albert G. Baca
language : en
Publisher: IET
Release Date : 2005-09
Fabrication Of Gaas Devices written by Albert G. Baca and has been published by IET this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005-09 with Technology & Engineering categories.
This book provides fundamental and practical information on all aspects of GaAs processing and gives pragmatic advice on cleaning and passivation, wet and dry etching and photolithography. Other topics covered include device performance for HBTs (Heterojunction Bipolar Transistors) and FETs (Field Effect Transistors), how these relate to processing choices, and special processing issues such as wet oxidation, which are especially important in optoelectronic devices. This book is suitable for both new and practising engineers.
Vlsi Fabrication Principles
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Author : Sorab K. Ghandhi
language : en
Publisher: John Wiley & Sons
Release Date : 1994-03-31
Vlsi Fabrication Principles written by Sorab K. Ghandhi and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 1994-03-31 with Technology & Engineering categories.
Fully updated with the latest technologies, this edition covers thefundamental principles underlying fabrication processes forsemiconductor devices along with integrated circuits made fromsilicon and gallium arsenide. Stresses fabrication criteria forsuch circuits as CMOS, bipolar, MOS, FET, etc. These diversetechnologies are introduced separately and then consolidated intocomplete circuits. An Instructor's Manual presenting detailed solutions to all theproblems in the book is available from the Wiley editorialdepartment.
Gallium Arsenide Technology In Europe
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Author : Joseph Mun
language : en
Publisher: Springer
Release Date : 1994
Gallium Arsenide Technology In Europe written by Joseph Mun and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 1994 with Computers categories.
Gallium Arsenide Technology In Europe
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Author : Joseph Mun
language : en
Publisher: Springer
Release Date : 1994
Gallium Arsenide Technology In Europe written by Joseph Mun and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 1994 with Computers categories.
Some of the key milestones in GaAs technology were ftrst demonstrated in Europe, for example, the ftrst GaAs Field Effect Transistor (FET) with microwave performance and the ftrst GaAs Microwave Monolithic Integrated Circuit (MMIC). The strategic nature of GaAs technology has attracted heavy investment from many vertically integrated companies in information technology, communication and defence, as well as from semiconductor manufacturers world wide. Europe always faced strong competition from the USA and Japan and until 1984, European GaAs activities were fragmented amongst various players, with some of the activities loosely grouped into national programmes. In 1984, a number of collaborative projects were established under the European Speciftc Programme on Information Technology (ESPRIT) which crossed national boundaries. It has launched a new and exciting phase for GaAs in Europe and few of those involved at the time could have imagined where such collaboration may lead. In the beginning of those early projects, collaboration was approached with caution and suspicion because after all, many members of a newly formed project team were previously competitors. However, common technology problems soon became apparent and the opportunity to discuss these problems with engineers and scientists from different backgrounds had quickly broken down all barriers. Today, collaboration has become an essential element in European R&D. Collaboration has strengthened the GaAs community and helped to accelerate its growth against difftcult times. This book examines the importance of GaAs technology in Europe and illustrates some of the recent activities pursued under various ESPRIT projects.
Properties Of Gallium Arsenide
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Author : M. R. Brozel
language : en
Publisher: Inst of Engineering & Technology
Release Date : 1996
Properties Of Gallium Arsenide written by M. R. Brozel and has been published by Inst of Engineering & Technology this book supported file pdf, txt, epub, kindle and other format this book has been release on 1996 with Technology & Engineering categories.
It was in 1986 that INSPEC (The Information Division of the Institution of Electrical Engineers) published the book Properties of Gallium Arsenide. Since then, major developments have taken place. This third edition is comprised of 150 specially commissioned articles contributed by experts from the USA, Europe and Japan.
Gallium Arsenide Electronics Materials And Devices A Strategic Study Of Markets Technologies And Companies Worldwide 1999 2004
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Author : R. Szweda
language : en
Publisher: Elsevier
Release Date : 2000-12-05
Gallium Arsenide Electronics Materials And Devices A Strategic Study Of Markets Technologies And Companies Worldwide 1999 2004 written by R. Szweda and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000-12-05 with Technology & Engineering categories.
The third edition of this highly respected market study provides a detailed insight into the global developments of the GaAs industry to 2004, and the implications for both suppliers and users of GaAs technology. The report has been completely revised and updated with a new chapter added on competitive technologies. The report also supplies market analysis by component type and application sectors.For a PDF version of the report please call Tina Enright on +44 (0) 1865 843008 for price details.
Semiconductor Device Modelling
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Author : Christopher M. Snowden
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Semiconductor Device Modelling written by Christopher M. Snowden and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.
Semiconductor device modelling has developed in recent years from being solely the domain of device physicists to span broader technological disciplines involved in device and electronic circuit design and develop ment. The rapid emergence of very high speed, high density integrated circuit technology and the drive towards high speed communications has meant that extremely small-scale device structures are used in contempor ary designs. The characterisation and analysis of these devices can no longer be satisfied by electrical measurements alone. Traditional equivalent circuit models and closed-form analytical models cannot always provide consis tently accurate results for all modes of operation of these very small devices. Furthermore, the highly competitive nature of the semiconductor industry has led to the need to minimise development costs and lead-time associated with introducing new designs. This has meant that there has been a greater demand for models capable of increasing our understanding of how these devices operate and capable of predicting accurate quantitative results. The desire to move towards computer aided design and expert systems has reinforced the need for models capable of representing device operation under DC, small-signal, large-signal and high frequency operation. It is also desirable to relate the physical structure of the device to the electrical performance. This demand for better models has led to the introduction of improved equivalent circuit models and a upsurge in interest in using physical models.
Optical Constants Of Crystalline And Amorphous Semiconductors
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Author : Sadao Adachi
language : en
Publisher: Springer Science & Business Media
Release Date : 1999-08-31
Optical Constants Of Crystalline And Amorphous Semiconductors written by Sadao Adachi and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 1999-08-31 with Technology & Engineering categories.
Knowledge of the refractive indices and absorption coefficients of semiconductors is especially import in the design and analysis of optical and optoelectronic devices. The determination of the optical constants of semiconductors at energies beyond the fundamental absorption edge is also known to be a powerful way of studying the electronic energy-band structures of the semiconductors. The purpose of this book is to give tabulated values and graphical information on the optical constants of the most popular semiconductors over the entire spectral range. This book presents data on the optical constants of crystalline and amorphous semiconductors. A complete set of the optical constants are presented in this book. They are: the complex dielectric constant (E=e.+ieJ, complex refractive index (n*=n+ik), absorption coefficient (a.), and normal-incidence reflectivity (R). The semiconductor materials considered in this book are the group-IV elemental and binary, llI-V, IT-VI, IV-VI binary semiconductors, and their alloys. The reader will fmd the companion book "Optical Properties of Crystalline and Amorphous Semiconductors: Materials and Fundamental Principles" useful since it emphasizes the basic material properties and fundamental prinCiples.
Gallium Arsenide Ic Applications Handbook
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Author :
language : en
Publisher: Elsevier
Release Date : 1995-09-27
Gallium Arsenide Ic Applications Handbook written by and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 1995-09-27 with Technology & Engineering categories.
Gallium Arsenide IC Applications Handbook is the first text to offer a comprehensive treatment of Gallium Arsenide (GaAs) integrated chip (IC) applications, specifically in microwave systems. The books coverage of GaAs in microwave monolithic ICs demonstrates why GaAs is being hailed as a material of the future for the various advantages it holds over silicon. This volume provides scientists, physicists, electrical engineers, and technology professionals and managers working on microwave technology with practical information on GaAs applications in radar, electronic warfare, communications, consumer electronics, automotive electronics and traffic control. Includes an executive summary in each volume and chapter Facilitates comprehension with its tutorial writing style Covers key technical issues Emphasizes practical aspects of the technology Contains minimal mathematics Provides a complete reference list