Gallium Nitride And Related Wide Bandgap Materials And Devices
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Gallium Nitride And Related Wide Bandgap Materials And Devices
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Author : R. Szweda
language : en
Publisher: Elsevier
Release Date : 2000-07-07
Gallium Nitride And Related Wide Bandgap Materials And Devices written by R. Szweda and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000-07-07 with Business & Economics categories.
The second edition of Gallium Nitride & Related Wide Bandgap Materials and Devices provides a detailed insight into the global developments in GaN, SiC and other optoelectronic materials. This report also examines the implication for both suppliers and users of GaN technology. For a PDF version of the report please call Tina Enright on +44 (0) 1865 843008 for price details.
Gan Based Materials And Devices
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Author : Michael Shur
language : en
Publisher: World Scientific
Release Date : 2004
Gan Based Materials And Devices written by Michael Shur and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004 with Technology & Engineering categories.
The unique materials properties of GaN-based semiconductors havestimulated a great deal of interest in research and developmentregarding nitride materials growth and optoelectronic andnitride-based electronic devices. High electron mobility andsaturation velocity, high sheet carrier concentration atheterojunction interfaces, high breakdown field, and low thermalimpedance of GaN-based films grown over SiC or bulk AlN substratesmake nitride-based electronic devices very promising.
Optoelectronic Devices
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Author : M Razeghi
language : en
Publisher: Elsevier
Release Date : 2004
Optoelectronic Devices written by M Razeghi and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004 with Science categories.
Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides
Gallium Nitride Processing For Electronics Sensors And Spintronics
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Author : Stephen J. Pearton
language : en
Publisher: Springer Science & Business Media
Release Date : 2006-02-24
Gallium Nitride Processing For Electronics Sensors And Spintronics written by Stephen J. Pearton and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006-02-24 with Technology & Engineering categories.
Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with practical magnetic ordering temperatures and current research points to gallium and aluminium nitride magnetic superconductors as having great potential. This book details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high temperature electronics. Written by three leading researchers in nitride semiconductors, the book provides an excellent introduction to gallium nitride technology and will be of interest to all reseachers and industrial practitioners wishing to keep up to date with developments that may lead to the next generation of transistors, lasers and integrated magnetic sensors.
Ultra Wide Bandgap Semiconductor Materials
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Author : Meiyong Liao
language : en
Publisher: Elsevier
Release Date : 2019-06-18
Ultra Wide Bandgap Semiconductor Materials written by Meiyong Liao and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-06-18 with Technology & Engineering categories.
Ultra-wide Bandgap Semiconductors (UWBG) covers the most recent progress in UWBG materials, including sections on high-Al-content AlGaN, diamond, B-Ga2O3, and boron nitrides. The coverage of these materials is comprehensive, addressing materials growth, physics properties, doping, device design, fabrication and performance. The most relevant and important applications are covered, including power electronics, RF electronics and DUV optoelectronics. There is also a chapter on novel structures based on UWBG, such as the heterojunctions, the low-dimensional structures, and their devices. This book is ideal for materials scientists and engineers in academia and R&D searching for materials superior to silicon carbide and gallium nitride. - Provides a one-stop resource on the most promising ultra-wide bandgap semiconducting materials, including high-Al-content AlGaN, diamond, ß-Ga2O3, boron nitrides, and low-dimensional materials - Presents comprehensive coverage, from materials growth and properties, to device design, fabrication and performance - Features the most relevant applications, including power electronics, RF electronics and DUV optoelectronics
Wide Energy Bandgap Electronic Devices
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Author : Fan Ren
language : en
Publisher: World Scientific
Release Date : 2003
Wide Energy Bandgap Electronic Devices written by Fan Ren and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003 with Technology & Engineering categories.
A presentation of state-of-the-art GaN and SiC electronic devices, as well as detailed applications of these devices to power conditioning, rf base station infrastructure and high temperature electronics. It includes results on InGaAsN devices, which constitute a very promising area for low power electronics.
Gallium Nitride Related Wide Bandgap Materials Devices
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Author : Roy Szweda
language : en
Publisher: Elsevier Science Limited
Release Date : 1997-01-01
Gallium Nitride Related Wide Bandgap Materials Devices written by Roy Szweda and has been published by Elsevier Science Limited this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997-01-01 with Technology & Engineering categories.
Spiral Bound. The first edition of GaN & Related Wide Bandgap Materials & Devices provides a detailed insight into the global developments in GaN, SiC and other opto and electronics materials over the next 5 years and the implication for both suppliers and users of GaN technology.This new profile has been compiled by the publisher of III-Vs Review and has been designed to supply answers to your business decision making and corporate strategy questions by providing detailed market information including: - Market figures and forecasts to 2001. End user application and device market analysis. Geographical demand and supply - North America, Japan, Europe and Rest of World. Analysis of key industry trends: GaN versus SiC for LEDS and lasers, electronic and optoelectronic devices, white lamp replacements, MOVPE and MBE technologies
Diode Laser Materials And Devices A Worldwide Market And Technology Overview To 2005
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Author : R. Szweda
language : en
Publisher: Elsevier
Release Date : 2001-12-20
Diode Laser Materials And Devices A Worldwide Market And Technology Overview To 2005 written by R. Szweda and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2001-12-20 with Technology & Engineering categories.
This report examines the development of the diode laser industry over a six-year period, 2000 to 2005, incorporating analysis of trends in markets, technologies and industry structure. It is designed to provide key information to users and manufacturers of substrates, epitaxial wafers (epiwafers) and devices. The coverage includes components, laser diodes, and the semiconducting (SC) wafers and epiwafers on which most of these devices are made. The geographical coverage of the report includes North America, Japan and Europe, which together will account for over 90% of the production and consumption of diode laser materials and devices over the next five years. However, many other countries have activities in this field including South-East Asia (Taiwan, South Korea, Singapore, Malaysia etc), China, India, Australia and Eastern Europe (Russia, Poland, Hungary, the Czech Republic) amongst others. Activities in these countries are commented on in the text where relevant, but are not quantified in the market data. Chapter 1 is an introduction to the market study. Chapter 2 contains an executive summary. Chapter 3 overviews materials markets. The size, quality, and particularly the price, of substrates and wafers are key factors in determining the ability of companies to produce competitive laser products. Chapter 3 also examines trends in materials technologies for laser diodes, the impact of the device markets on wafer demand, and the main suppliers. This chapter introduces the semiconductor materials that are presently or will likely become important to the fabrication of diode laser devices. The principal distinguishing properties of these materials are explained with reference to their application. Chapter 4 chapter examines the basic application sectors for laser diode devices as well as the basic commercial opportunities, changes and forces acting within each sector. The chapter also examines the market for the basic types of device as well as the promising newer types. For each type of device, market data and forecasts are provided and future prospects described. The application data are presented for the following industrial groups: • Automotive • Computers • Consumer • Industrial • Military and Aerospace • Telecommunications • Others A full 5-year forecast and analysis is provided by application and region. Chapter 5 is a technology overview. In this chapter a background and overview of developments in the principal technological R&D and production processes for devices is provided. The main focus is on the most important enabling technology for the production of the present and future generations of laser diodes and related devices. This process is crystal growth and involves the following sequence: • Bulk growth of single crystals • Epitaxial growth of semiconductor single crystal layers • Ion implantation • Device fabrication, ie gate and contact formation, etc • Packaging & test Chapter 6 profiles substrate suppliers, epiwafers suppliers and merchant and captive producers of GaAs devices. Chapter 7 lists universities and selected industrial labs involved in the areas of diode laser research. Chapter 8 is a directory of suppliers. Chapter 9 provides acronyms and exchange rates.
Gallium Nitride And Related Materials
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Author : Isik C. Kizilyalli
language : en
Publisher: Springer
Release Date : 2025-04-23
Gallium Nitride And Related Materials written by Isik C. Kizilyalli and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2025-04-23 with Technology & Engineering categories.
This book presents progress in device processing and materials characterization of the wide-bandgap semiconductor gallium nitride (GaN) and related materials for power electronics applications. The content of the book is based on the output of multiple well defined and actively managed programs from the U.S. Department of Energy’s Advanced Research Projects Agency-Energy (ARPA-E). The material is organized into eight parts with a total of 28 chapters contributed from invited experts that were part of the ARPA-E programs along with chapters from a few select experts from around the world who are actively engaged in GaN and related WBG semiconductor research and development. The book includes an overview of GaN power electronic devices and systems and a comprehensive review of the key vertical device processing challenges (Part I), detailed descriptions of bulk GaN substrate technology (Part II), discussions of the challenges in GaN epitaxial growth and processing (Part III), an in-depth examination of approaches and challenges in GaN selective area p-type doping with an eye towards mechanistic understanding (Part IV), an overview of innovative material characterization techniques developed to understand the device processing challenges (Part V), an analysis of the fundamental materials properties of GaN in relation to its use in power electronics (Part VI), a discussion of related earlier stage nitride wide bandgap materials development and application in power electronics and other applications (Part VII), and concludes with a forward-looking discussion of the areas that still need research and development to push the limits of power electronics to utilize wide bandgap semiconductors along with potential high impact application areas (Part VIII). This book is intended to be an essential reference for anyone working in either basic research or advanced development of vertical architecture GaN power electronics and technologies. It is anticipated this book will become a go-to reference for any scientist and engineer working in any nitride semiconductor material seeking an updated coverage of the state-of-the-art processing and characterization techniques that will push GaN know-how to new materials and device frontiers.
Nitride Semiconductor Technology
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Author : Fabrizio Roccaforte
language : en
Publisher: Wiley-VCH
Release Date : 2020-08-24
Nitride Semiconductor Technology written by Fabrizio Roccaforte and has been published by Wiley-VCH this book supported file pdf, txt, epub, kindle and other format this book has been release on 2020-08-24 with Technology & Engineering categories.
The book "Nitride Semiconductor Technology" provides an overview of nitride semiconductors and their uses in optoelectronics and power electronics devices. It explains the physical properties of those materials as well as their growth methods. Their applications in high electron mobility transistors, vertical power devices, LEDs, laser diodes, and vertical-cavity surface-emitting lasers are discussed in detail. The book further examines reliability issues in these materials and puts forward perspectives of integrating them with 2D materials for novel high-frequency and high-power devices. In summary, it covers nitride semiconductor technology from materials to devices and provides the basis for further research.