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Gallium Nitride Gan Ii


Gallium Nitride Gan Ii
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Gallium Nitride Gan Ii


Gallium Nitride Gan Ii
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Author :
language : en
Publisher: Academic Press
Release Date : 1998-10-22

Gallium Nitride Gan Ii written by and has been published by Academic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998-10-22 with Science categories.


Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.



Gallium Nitride Gan Ii


Gallium Nitride Gan Ii
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Author :
language : en
Publisher: Academic Press
Release Date : 1998-10-30

Gallium Nitride Gan Ii written by and has been published by Academic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998-10-30 with Technology & Engineering categories.


Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.



Semiconductors And Semimetals


Semiconductors And Semimetals
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Author : Robert K. Willardson
language : en
Publisher:
Release Date : 1966

Semiconductors And Semimetals written by Robert K. Willardson and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1966 with categories.




Gallium Nitride Gan


Gallium Nitride Gan
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Author : Farid Medjdoub
language : en
Publisher: CRC Press
Release Date : 2017-12-19

Gallium Nitride Gan written by Farid Medjdoub and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-12-19 with Technology & Engineering categories.


Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it special properties for applications in optoelectronic, high-power, and high-frequency devices, and because of its high off-state breakdown strength combined with excellent on-state channel conductivity, GaN is an ideal candidate for switching power transistors. Explores Recent Progress in High-Frequency GaN Technology Written by a panel of academic and industry experts from around the globe, this book reviews the advantages of GaN-based material systems suitable for high-frequency, high-power applications. It provides an overview of the semiconductor environment, outlines the fundamental device physics of GaN, and describes GaN materials and device structures that are needed for the next stage of microelectronics and optoelectronics. The book details the development of radio frequency (RF) semiconductor devices and circuits, considers the current challenges that the industry now faces, and examines future trends. In addition, the authors: Propose a design in which multiple LED stacks can be connected in a series using interband tunnel junction (TJ) interconnects Examine GaN technology while in its early stages of high-volume deployment in commercial and military products Consider the potential use of both sunlight and hydrogen as promising and prominent energy sources for this technology Introduce two unique methods, PEC oxidation and vapor cooling condensation methods, for the deposition of high-quality oxide layers A single-source reference for students and professionals, Gallium Nitride (GaN): Physics, Devices, and Technology provides an overall assessment of the semiconductor environment, discusses the potential use of GaN-based technology for RF semiconductor devices, and highlights the current and emerging applications of GaN.



Gallium Nitride Enabled High Frequency And High Efficiency Power Conversion


Gallium Nitride Enabled High Frequency And High Efficiency Power Conversion
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Author : Gaudenzio Meneghesso
language : en
Publisher: Springer
Release Date : 2018-05-12

Gallium Nitride Enabled High Frequency And High Efficiency Power Conversion written by Gaudenzio Meneghesso and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-05-12 with Technology & Engineering categories.


This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion. Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers; Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency and lower cost power conversion; Enables design of smaller, cheaper and more efficient power supplies.



Gallium Nitride And Related Materials Ii Volume 468


Gallium Nitride And Related Materials Ii Volume 468
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Author : C. R. Abernathy
language : en
Publisher: Materials Research Society
Release Date : 1997-08-13

Gallium Nitride And Related Materials Ii Volume 468 written by C. R. Abernathy and has been published by Materials Research Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997-08-13 with Technology & Engineering categories.


This book from MRS dedicated to III-Nitrides, focuses on developments in AlN, GaN, InN and their alloys that are now finding application in short-wavelength lasers (~400nm, cw at room temperature) and high-power electronics (2.8W/mm at GHz). Experts from fields including crystal growth, condensed matter theory, source chemistry, device processing and device design come together in the volume to address issues of both scientific and technological relevance. And while much of the book reports on advances in material preparation and the understanding of defect issues, similar advances in material and device processing are also reported. Topics include: growth and doping; substrates and substrate effects; characterization; processing and device performance and design.



Gallium Nitride Gan Ii


Gallium Nitride Gan Ii
DOWNLOAD
Author :
language : en
Publisher: Academic Press
Release Date : 1998-10-22

Gallium Nitride Gan Ii written by and has been published by Academic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998-10-22 with Science categories.


Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.



Gallium Nitride


Gallium Nitride
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Author : Jacques L Pankove
language : en
Publisher: Academic Press
Release Date : 1999

Gallium Nitride written by Jacques L Pankove and has been published by Academic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1999 with Gallium nitride categories.


These two volumes present a complete description of the various methods of making and studying the crystal and electronic structure. The books also assist in determining the origin and the influence of defects in the intrinsic properties and of applying these materials for various optical (LEDs, lasers, detectors) and electronic (transistors, non-volatile memories) devices. These two volumes give a comprehensive description of both experimental and theoretical developments in the field of III-V nitrides over the past thirty years. The various chapters address issues related to crystal growth and structure, doping and alloy phenomena, band structure, optical and electronic properties, non-linear optical phenomena, the origin and the effect of strain in the hetero-epitaxy and the electronic structure, phonons, the theory and experimental observations of the effect of hydrogen, investigation of the electronic structure of defects using transport and magnetic resonance measurements, MQWs and superlattices, device processing and applications of these materials to LEDs, Lasers, Ultraviolet and X-ray Detectors, Transistors and non-volatile semiconductor memories. The various chapters were written by experts and an attempt has been made to address the topics in a tutorial fashion,including an historical review,a description of the state of the art, anticipation of future developments, and presentation of a complete list of references. The level of treatment of the various topics is appropriate for graduate students, laboratory practitioners, as well as experts in the field.



Handbook Of Gan Semiconductor Materials And Devices


Handbook Of Gan Semiconductor Materials And Devices
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Author : Wengang (Wayne) Bi
language : en
Publisher: CRC Press
Release Date : 2017-10-20

Handbook Of Gan Semiconductor Materials And Devices written by Wengang (Wayne) Bi and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-10-20 with Science categories.


This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics. Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China. Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China. Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA. Bo Shen is the Cheung Kong Professor at Peking University in China.



Gallium Nitride Gan I


Gallium Nitride Gan I
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Author : Theodore D. Moustakas
language : en
Publisher: Academic Press
Release Date : 1998

Gallium Nitride Gan I written by Theodore D. Moustakas and has been published by Academic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998 with Gallium nitride categories.