Gallium Nitride

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Gallium Nitride Gan

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Author : Farid Medjdoub
language : en
Publisher: CRC Press
Release Date : 2017-12-19

Gallium Nitride Gan written by Farid Medjdoub and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-12-19 with Technology & Engineering categories.

Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it special properties for applications in optoelectronic, high-power, and high-frequency devices, and because of its high off-state breakdown strength combined with excellent on-state channel conductivity, GaN is an ideal candidate for switching power transistors. Explores Recent Progress in High-Frequency GaN Technology Written by a panel of academic and industry experts from around the globe, this book reviews the advantages of GaN-based material systems suitable for high-frequency, high-power applications. It provides an overview of the semiconductor environment, outlines the fundamental device physics of GaN, and describes GaN materials and device structures that are needed for the next stage of microelectronics and optoelectronics. The book details the development of radio frequency (RF) semiconductor devices and circuits, considers the current challenges that the industry now faces, and examines future trends. In addition, the authors: Propose a design in which multiple LED stacks can be connected in a series using interband tunnel junction (TJ) interconnects Examine GaN technology while in its early stages of high-volume deployment in commercial and military products Consider the potential use of both sunlight and hydrogen as promising and prominent energy sources for this technology Introduce two unique methods, PEC oxidation and vapor cooling condensation methods, for the deposition of high-quality oxide layers A single-source reference for students and professionals, Gallium Nitride (GaN): Physics, Devices, and Technology provides an overall assessment of the semiconductor environment, discusses the potential use of GaN-based technology for RF semiconductor devices, and highlights the current and emerging applications of GaN.

Gallium Nitride Gan

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Author :
language : en
Publisher:
Release Date : 1998

Gallium Nitride Gan written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998 with Electroluminescent devices categories.

Gallium Nitride Gan Ii

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Author :
language : en
Publisher: Academic Press
Release Date : 1998-10-22

Gallium Nitride Gan Ii written by and has been published by Academic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998-10-22 with Science categories.

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

Gallium Nitride And Silicon Carbide Power Devices

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Author : B Jayant Baliga
language : en
Publisher: World Scientific Publishing Company
Release Date : 2016-12-12

Gallium Nitride And Silicon Carbide Power Devices written by B Jayant Baliga and has been published by World Scientific Publishing Company this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-12-12 with categories.

During the last 30 years, significant progress has been made to improve our understanding of gallium nitride and silicon carbide device structures, resulting in experimental demonstration of their enhanced performances for power electronic systems. Gallium nitride power devices made by the growth of the material on silicon substrates have gained a lot of interest. Power device products made from these materials have become available during the last five years from many companies. This comprehensive book discusses the physics of operation and design of gallium nitride and silicon carbide power devices. It can be used as a reference by practicing engineers in the power electronics industry and as a textbook for a power device or power electronics course in universities. Request Inspection Copy

Gallium Nitride Electronics

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Author : Rüdiger Quay
language : en
Publisher: Springer Science & Business Media
Release Date : 2008-04-05

Gallium Nitride Electronics written by Rüdiger Quay and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008-04-05 with Technology & Engineering categories.

This book is based on nearly a decade of materials and electronics research at the leading research institution on the nitride topic in Europe. It is a comprehensive monograph and tutorial that will be of interest to graduate students of electrical engineering, communication engineering, and physics; to materials, device, and circuit engineers in research and industry; to all scientists with a general interest in advanced electronics.

Gallium Nitride Processing For Electronics Sensors And Spintronics

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Author : Stephen J. Pearton
language : en
Publisher: Springer Science & Business Media
Release Date : 2006-07-06

Gallium Nitride Processing For Electronics Sensors And Spintronics written by Stephen J. Pearton and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006-07-06 with Technology & Engineering categories.

Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with practical magnetic ordering temperatures and current research points to gallium and aluminium nitride magnetic superconductors as having great potential. This book details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high temperature electronics. Written by three leading researchers in nitride semiconductors, the book provides an excellent introduction to gallium nitride technology and will be of interest to all reseachers and industrial practitioners wishing to keep up to date with developments that may lead to the next generation of transistors, lasers and integrated magnetic sensors.

Gallium Nitride

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Author : Jacques L Pankove
language : en
Publisher: Academic Press
Release Date : 1999

Gallium Nitride written by Jacques L Pankove and has been published by Academic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1999 with Gallium nitride categories.

These two volumes present a complete description of the various methods of making and studying the crystal and electronic structure. The books also assist in determining the origin and the influence of defects in the intrinsic properties and of applying these materials for various optical (LEDs, lasers, detectors) and electronic (transistors, non-volatile memories) devices. These two volumes give a comprehensive description of both experimental and theoretical developments in the field of III-V nitrides over the past thirty years. The various chapters address issues related to crystal growth and structure, doping and alloy phenomena, band structure, optical and electronic properties, non-linear optical phenomena, the origin and the effect of strain in the hetero-epitaxy and the electronic structure, phonons, the theory and experimental observations of the effect of hydrogen, investigation of the electronic structure of defects using transport and magnetic resonance measurements, MQWs and superlattices, device processing and applications of these materials to LEDs, Lasers, Ultraviolet and X-ray Detectors, Transistors and non-volatile semiconductor memories. The various chapters were written by experts and an attempt has been made to address the topics in a tutorial fashion,including an historical review,a description of the state of the art, anticipation of future developments, and presentation of a complete list of references. The level of treatment of the various topics is appropriate for graduate students, laboratory practitioners, as well as experts in the field.

Gallium Nitride Power Devices

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Author : Hongyu Yu
language : en
Publisher: CRC Press
Release Date : 2017-07-06

Gallium Nitride Power Devices written by Hongyu Yu and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-07-06 with Science categories.

GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technologies are listed as the top priority to be developed in many countries, including the United States, the European Union, Japan, and China. This book presents a comprehensive overview of GaN power device technologies, for example, material growth, property analysis, device structure design, fabrication process, reliability, failure analysis, and packaging. It provides useful information to both students and researchers in academic and related industries working on GaN power devices. GaN wafer growth technology is from Enkris Semiconductor, currently one of the leading players in commercial GaN wafers. Chapters 3 and 7, on the GaN transistor fabrication process and GaN vertical power devices, are edited by Dr. Zhihong Liu, who has been working on GaN devices for more than ten years. Chapters 2 and 5, on the characteristics of polarization effects and the original demonstration of AlGaN/GaN heterojunction field-effect transistors, are written by researchers from Southwest Jiaotong University. Chapters 6, 8, and 9, on surface passivation, reliability, and package technologies, are edited by a group of researchers from the Southern University of Science and Technology of China.

Gallium Nitride Gan I

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Author : Theodore D. Moustakas
language : en
Publisher: Academic Press
Release Date : 1998

Gallium Nitride Gan I written by Theodore D. Moustakas and has been published by Academic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998 with Gallium nitride categories.

Properties Processing And Applications Of Gallium Nitride And Related Semiconductors

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Author : James H. Edgar
language : en
Publisher: Institution of Electrical Engineers
Release Date : 1999

Properties Processing And Applications Of Gallium Nitride And Related Semiconductors written by James H. Edgar and has been published by Institution of Electrical Engineers this book supported file pdf, txt, epub, kindle and other format this book has been release on 1999 with Technology & Engineering categories.

Based on its outstanding properties, including a wide energy band gap, high thermal conductivity, and high electron drift velocity, GaN is uniquely suited for many novel devices including solar-blind UV light detectors, high power microwave transistors, and cold cathode electron emitters. This excellent reference covers the basic physical and chemical properties, surveys existing processing technology, and presents summaries of the current state-of-the-art of devices.