Gate Stack Engineering For Emerging Polarization Based Non Volatile Memories
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Gate Stack Engineering For Emerging Polarization Based Non Volatile Memories
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Author : Milan Pesic
language : en
Publisher: BoD – Books on Demand
Release Date : 2017-07-14
Gate Stack Engineering For Emerging Polarization Based Non Volatile Memories written by Milan Pesic and has been published by BoD – Books on Demand this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-07-14 with Technology & Engineering categories.
The hafnium based ferroelectric memories offer a low power consumption, ultra-fast operation, non-volatile retention as well as the small relative cell size as the main requirements for future memories. These remarkable properties of ferroelectric memories make them promising candidates for non-volatile memories that would bridge the speed gap between fast logic and slow off-chip, long term storage. Even though the retention of hafnia based ferroelectric memories can be extrapolated to a ten-year specification target, they suffer from a rather limited endurance. Therefore, this work targets relating the field cycling behavior of hafnia based ferroelectric memories to the physical mechanisms taking place within the film stack. Establishing a correlation between the performance of the device and underlying physical mechanisms is the first step toward understanding the device and engineering guidelines for novel, superior devices. In the frame of this work, an in-depth ferroelectric and dielectric characterization, analysis and TEM study was combined with comprehensive modeling approach. Drift and diffusion based vacancy redistribution was found as the main cause for the phase transformation and consequent increase of the remnant polarization, while domain pinning and defect generation is identified to be responsible for the device fatigue. Finally, based on Landau theory, a simple way to utilize the high endurance strength of anti-ferroelectric (AFE) materials and achieve non-volatility in state-of-the-art DRAM stacks was proposed and the fabrication of the world's first non-volatile AFE-RAM is reported. These findings represent an important milestone and pave the way toward a commercialization of (anti)ferroelectric non-volatile memories based on simple binary-oxides.
Gate Stack Engineering For Emerging Polarization Based Non Volatile Memories
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Author : Milan Pesic
language : en
Publisher:
Release Date : 2017
Gate Stack Engineering For Emerging Polarization Based Non Volatile Memories written by Milan Pesic and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017 with categories.
Ferroelectricity In Doped Hafnium Oxide
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Author : Uwe Schroeder
language : en
Publisher: Woodhead Publishing
Release Date : 2019-03-27
Ferroelectricity In Doped Hafnium Oxide written by Uwe Schroeder and has been published by Woodhead Publishing this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-03-27 with Technology & Engineering categories.
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized. - Explores all aspects of the structural and electrical properties of HfO2, including processes, modelling and implementation into semiconductor devices - Considers potential applications including FeCaps, FeFETs, NCFETs, FTJs and more - Provides comparison of an emerging ferroelectric material to conventional ferroelectric materials with insights to the problems of downscaling that conventional ferroelectrics face
Emerging Ferroelectric Materials And Devices
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Author :
language : en
Publisher: Elsevier
Release Date : 2023-11-27
Emerging Ferroelectric Materials And Devices written by and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2023-11-27 with Science categories.
Semiconductors and Semimetals series, highlights new advances in the field, with this new volume presenting interesting chapters. Each chapter is written by an international board of authors. - 2019 marks the year that nitride ferroelectrics were reported, and the indicators and mechanisms used for oxide ferroelectricity appear inadequate - The emergence of nitride ferroelectrics has opened new frontiers in ferroelectric materials research and ferroelectric based technologies. This book is a direct consequence of this - Draws upon the collective knowledge and expertise of leading scientists and researchers in this field to provide a holistic view on the state of ferroelectric nitride research and applications
Herstellung Ultra D Nner Hoch R Oxide Und Deren Verhalten Unter Dynamischen Elektrischen Stressbedingungen
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Author : Steve Knebel
language : de
Publisher: Logos Verlag Berlin GmbH
Release Date : 2019-10-08
Herstellung Ultra D Nner Hoch R Oxide Und Deren Verhalten Unter Dynamischen Elektrischen Stressbedingungen written by Steve Knebel and has been published by Logos Verlag Berlin GmbH this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-10-08 with Technology & Engineering categories.
Im Rahmen dieser Arbeit werden HfO2 und ZrO2 basierte hoch-εr Materialsysteme mit ihrer jeweiligen Anwendung als Gateoxid bzw. DRAM Isolalationsschicht untersucht. Es werden alternative dielektrische Schichten für Speicherkondensatoren diskutiert und Alternativen zum ZrO2/Al2O3/ZrO2 (ZAZ) Schichtstapel untersucht. Neben ZAZ, wurden Schichtstapel mit SrO oder Sc2O3 Zwischenschicht abgeschieden und strukturell und elektrisch charakterisiert. Weiterhin wurden die abgeschiedenen Schichten hinsichtlich ihres dielektrischen Absorptionsverhalten sowie ihres Durchbruchsverhalten geprüft und verglichen. Ein weiterer Schwerpunkt ist das statische und dynamische Verhalten des zeitabhängigen dielektrischen Durchbruchs. Als Alternative zum DRAM Konzept wird die ferroelektrische Eigenschaft von dotierten HfO2 und dessen Einsatz als ferroelektrischer RAM vorgestellt. Bei diesem Konzept wird das paraelektrische Dielektrikum eines DRAMs durch das ferroelektrische Material ersetzt. Des Weiteren wurde im Rahmen dieser Arbeit HfO2 als hoch-εr Dielektrikum für Transistoren mit metallischem Gate (HKMG) untersucht. Mittels temperaturabhängigen Leckstrommessungen wird der dominante Leistungsmechanismus untersucht. Wie im vorangegangenen Teil der Arbeit wird das dielektrische Absorptionsverhalten studiert. Auch für HKMG Transistoren wird der zeitabhängige dielektrische Durchbruch bei alternierendem elektrischem Stress und die Rolle von Defekten in Form von Sauerstofffehlstellen beleuchtet.
Chemical Abstracts
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Author :
language : en
Publisher:
Release Date : 2002
Chemical Abstracts written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002 with Chemistry categories.
Intelligent Circuits And Systems
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Author : Rajesh Singh
language : en
Publisher: CRC Press
Release Date : 2021-08-01
Intelligent Circuits And Systems written by Rajesh Singh and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021-08-01 with Technology & Engineering categories.
ICICS-2020 is the third conference initiated by the School of Electronics and Electrical Engineering at Lovely Professional University that explored recent innovations of researchers working for the development of smart and green technologies in the fields of Energy, Electronics, Communications, Computers, and Control. ICICS provides innovators to identify new opportunities for the social and economic benefits of society. This conference bridges the gap between academics and R&D institutions, social visionaries, and experts from all strata of society to present their ongoing research activities and foster research relations between them. It provides opportunities for the exchange of new ideas, applications, and experiences in the field of smart technologies and finding global partners for future collaboration. The ICICS-2020 was conducted in two broad categories, Intelligent Circuits & Intelligent Systems and Emerging Technologies in Electrical Engineering.
Resistive Random Access Memory Rram
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Author : Shimeng Yu
language : en
Publisher: Morgan & Claypool Publishers
Release Date : 2016-03-18
Resistive Random Access Memory Rram written by Shimeng Yu and has been published by Morgan & Claypool Publishers this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-03-18 with Technology & Engineering categories.
RRAM technology has made significant progress in the past decade as a competitive candidate for the next generation non-volatile memory (NVM). This lecture is a comprehensive tutorial of metal oxide-based RRAM technology from device fabrication to array architecture design. State-of-the-art RRAM device performances, characterization, and modeling techniques are summarized, and the design considerations of the RRAM integration to large-scale array with peripheral circuits are discussed. Chapter 2 introduces the RRAM device fabrication techniques and methods to eliminate the forming process, and will show its scalability down to sub-10 nm regime. Then the device performances such as programming speed, variability control, and multi-level operation are presented, and finally the reliability issues such as cycling endurance and data retention are discussed. Chapter 3 discusses the RRAM physical mechanism, and the materials characterization techniques to observe the conductive filaments and the electrical characterization techniques to study the electronic conduction processes. It also presents the numerical device modeling techniques for simulating the evolution of the conductive filaments as well as the compact device modeling techniques for circuit-level design. Chapter 4 discusses the two common RRAM array architectures for large-scale integration: one-transistor-one-resistor (1T1R) and cross-point architecture with selector. The write/read schemes are presented and the peripheral circuitry design considerations are discussed. Finally, a 3D integration approach is introduced for building ultra-high density RRAM array. Chapter 5 is a brief summary and will give an outlook for RRAM’s potential novel applications beyond the NVM applications.
Nanoelectronics And Information Technology
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Author : Rainer Waser
language : en
Publisher: John Wiley & Sons
Release Date : 2012-05-29
Nanoelectronics And Information Technology written by Rainer Waser and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-05-29 with Technology & Engineering categories.
Fachlich auf höchstem Niveau, visuell überzeugend und durchgängig farbig illustriert: Das ist die neue Auflage der praxisbewährten Einführung in spezialisierte elektronische Materialien und Bauelemente aus der Informationstechnologie. Über ein Drittel des Inhalts ist neu, alle anderen Beiträge wurden gründlich überarbeitet und aktualisiert.
Flash Memories
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Author : Paulo Cappelletti
language : en
Publisher: Springer
Release Date : 1999-06-30
Flash Memories written by Paulo Cappelletti and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 1999-06-30 with Technology & Engineering categories.
A Flash memory is a Non Volatile Memory (NVM) whose "unit cells" are fabricated in CMOS technology and programmed and erased electrically. In 1971, Frohman-Bentchkowsky developed a folating polysilicon gate tran sistor [1, 2], in which hot electrons were injected in the floating gate and removed by either Ultra-Violet (UV) internal photoemission or by Fowler Nordheim tunneling. This is the "unit cell" of EPROM (Electrically Pro grammable Read Only Memory), which, consisting of a single transistor, can be very densely integrated. EPROM memories are electrically programmed and erased by UV exposure for 20-30 mins. In the late 1970s, there have been many efforts to develop an electrically erasable EPROM, which resulted in EEPROMs (Electrically Erasable Programmable ROMs). EEPROMs use hot electron tunneling for program and Fowler-Nordheim tunneling for erase. The EEPROM cell consists of two transistors and a tunnel oxide, thus it is two or three times the size of an EPROM. Successively, the combination of hot carrier programming and tunnel erase was rediscovered to achieve a single transistor EEPROM, called Flash EEPROM. The first cell based on this concept has been presented in 1979 [3]; the first commercial product, a 256K memory chip, has been presented by Toshiba in 1984 [4]. The market did not take off until this technology was proven to be reliable and manufacturable [5].