Gate Stack Engineering For Emerging Polarization Based Non Volatile Memories
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Gate Stack Engineering For Emerging Polarization Based Non Volatile Memories
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Author : Milan Pesic
language : en
Publisher: BoD – Books on Demand
Release Date : 2017-07-14
Gate Stack Engineering For Emerging Polarization Based Non Volatile Memories written by Milan Pesic and has been published by BoD – Books on Demand this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-07-14 with Technology & Engineering categories.
The hafnium based ferroelectric memories offer a low power consumption, ultra-fast operation, non-volatile retention as well as the small relative cell size as the main requirements for future memories. These remarkable properties of ferroelectric memories make them promising candidates for non-volatile memories that would bridge the speed gap between fast logic and slow off-chip, long term storage. Even though the retention of hafnia based ferroelectric memories can be extrapolated to a ten-year specification target, they suffer from a rather limited endurance. Therefore, this work targets relating the field cycling behavior of hafnia based ferroelectric memories to the physical mechanisms taking place within the film stack. Establishing a correlation between the performance of the device and underlying physical mechanisms is the first step toward understanding the device and engineering guidelines for novel, superior devices. In the frame of this work, an in-depth ferroelectric and dielectric characterization, analysis and TEM study was combined with comprehensive modeling approach. Drift and diffusion based vacancy redistribution was found as the main cause for the phase transformation and consequent increase of the remnant polarization, while domain pinning and defect generation is identified to be responsible for the device fatigue. Finally, based on Landau theory, a simple way to utilize the high endurance strength of anti-ferroelectric (AFE) materials and achieve non-volatility in state-of-the-art DRAM stacks was proposed and the fabrication of the world's first non-volatile AFE-RAM is reported. These findings represent an important milestone and pave the way toward a commercialization of (anti)ferroelectric non-volatile memories based on simple binary-oxides.
Ferroelectricity In Doped Hafnium Oxide
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Author : Uwe Schroeder
language : en
Publisher: Woodhead Publishing
Release Date : 2019-03-27
Ferroelectricity In Doped Hafnium Oxide written by Uwe Schroeder and has been published by Woodhead Publishing this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-03-27 with Technology & Engineering categories.
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized. Explores all aspects of the structural and electrical properties of HfO2, including processes, modelling and implementation into semiconductor devices Considers potential applications including FeCaps, FeFETs, NCFETs, FTJs and more Provides comparison of an emerging ferroelectric material to conventional ferroelectric materials with insights to the problems of downscaling that conventional ferroelectrics face
Emerging Non Volatile Memories
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Author : Seungbum Hong
language : en
Publisher: Springer
Release Date : 2014-11-18
Emerging Non Volatile Memories written by Seungbum Hong and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-11-18 with Technology & Engineering categories.
This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory. This book also: Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others. Provides an overview of non-volatile memory fundamentals. Broadens readers’ understanding of future trends in non-volatile memories.
Emerging Non Volatile Memory Technologies
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Author : Wen Siang Lew
language : en
Publisher: Springer Nature
Release Date : 2021-01-09
Emerging Non Volatile Memory Technologies written by Wen Siang Lew and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021-01-09 with Science categories.
This book offers a balanced and comprehensive guide to the core principles, fundamental properties, experimental approaches, and state-of-the-art applications of two major groups of emerging non-volatile memory technologies, i.e. spintronics-based devices as well as resistive switching devices, also known as Resistive Random Access Memory (RRAM). The first section presents different types of spintronic-based devices, i.e. magnetic tunnel junction (MTJ), domain wall, and skyrmion memory devices. This section describes how their developments have led to various promising applications, such as microwave oscillators, detectors, magnetic logic, and neuromorphic engineered systems. In the second half of the book, the underlying device physics supported by different experimental observations and modelling of RRAM devices are presented with memory array level implementation. An insight into RRAM desired properties as synaptic element in neuromorphic computing platforms from material and algorithms viewpoint is also discussed with specific example in automatic sound classification framework.
Charge Trapping Non Volatile Memories
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Author : Panagiotis Dimitrakis
language : en
Publisher: Springer
Release Date : 2017-02-14
Charge Trapping Non Volatile Memories written by Panagiotis Dimitrakis and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-02-14 with Technology & Engineering categories.
This book describes the technology of charge-trapping non-volatile memories and their uses. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved and the fundamental properties of the technology. Modern material properties, used as charge-trapping layers, for new applications are introduced. Provides a comprehensive overview of the technology for charge-trapping non-volatile memories; Details new architectures and current modeling concepts for non-volatile memory devices; Focuses on conduction through multi-layer gate dielectrics stacks.
Emerging Ferroelectric Materials And Devices
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Author :
language : en
Publisher: Elsevier
Release Date : 2023-11-27
Emerging Ferroelectric Materials And Devices written by and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2023-11-27 with Science categories.
Semiconductors and Semimetals series, highlights new advances in the field, with this new volume presenting interesting chapters. Each chapter is written by an international board of authors. 2019 marks the year that nitride ferroelectrics were reported, and the indicators and mechanisms used for oxide ferroelectricity appear inadequate The emergence of nitride ferroelectrics has opened new frontiers in ferroelectric materials research and ferroelectric based technologies. This book is a direct consequence of this Draws upon the collective knowledge and expertise of leading scientists and researchers in this field to provide a holistic view on the state of ferroelectric nitride research and applications
Advances In Non Volatile Memory And Storage Technology
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Author : Yoshio Nishi
language : en
Publisher: Woodhead Publishing
Release Date : 2019-06-15
Advances In Non Volatile Memory And Storage Technology written by Yoshio Nishi and has been published by Woodhead Publishing this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-06-15 with Science categories.
Advances in Nonvolatile Memory and Storage Technology, Second Edition, addresses recent developments in the non-volatile memory spectrum, from fundamental understanding, to technological aspects. The book provides up-to-date information on the current memory technologies as related by leading experts in both academia and industry. To reflect the rapidly changing field, many new chapters have been included to feature the latest in RRAM technology, STT-RAM, memristors and more. The new edition describes the emerging technologies including oxide-based ferroelectric memories, MRAM technologies, and 3D memory. Finally, to further widen the discussion on the applications space, neuromorphic computing aspects have been included. This book is a key resource for postgraduate students and academic researchers in physics, materials science and electrical engineering. In addition, it will be a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials and portable electronic devices. Discusses emerging devices and research trends, such as neuromorphic computing and oxide-based ferroelectric memories Provides an overview on developing nonvolatile memory and storage technologies and explores their strengths and weaknesses Examines improvements to flash technology, charge trapping and resistive random access memory
Non Volatile Memories
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Author : Pierre-Camille Lacaze
language : en
Publisher: John Wiley & Sons
Release Date : 2014-12-01
Non Volatile Memories written by Pierre-Camille Lacaze and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-12-01 with Technology & Engineering categories.
Written for scientists, researchers, and engineers, Non-volatile Memories describes the recent research and implementations in relation to the design of a new generation of non-volatile electronic memories. The objective is to replace existing memories (DRAM, SRAM, EEPROM, Flash, etc.) with a universal memory model likely to reach better performances than the current types of memory: extremely high commutation speeds, high implantation densities and retention time of information of about ten years.
Emerging Non Volatile Memory Technologies
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Author : Wen Siang Lew
language : en
Publisher:
Release Date : 2021
Emerging Non Volatile Memory Technologies written by Wen Siang Lew and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021 with categories.
This book offers a balanced and comprehensive guide to the core principles, fundamental properties, experimental approaches, and state-of-the-art applications of two major groups of emerging non-volatile memory technologies, i.e. spintronics-based devices as well as resistive switching devices, also known as Resistive Random Access Memory (RRAM). The first section presents different types of spintronic-based devices, i.e. magnetic tunnel junction (MTJ), domain wall, and skyrmion memory devices. This section describes how their developments have led to various promising applications, such as microwave oscillators, detectors, magnetic logic, and neuromorphic engineered systems. In the second half of the book, the underlying device physics supported by different experimental observations and modelling of RRAM devices are presented with memory array level implementation. An insight into RRAM desired properties as synaptic element in neuromorphic computing platforms from material and algorithms viewpoint is also discussed with specific example in automatic sound classification framework.
Sensing Of Non Volatile Memory Demystified
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Author : Swaroop Ghosh
language : en
Publisher: Springer
Release Date : 2018-08-10
Sensing Of Non Volatile Memory Demystified written by Swaroop Ghosh and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-08-10 with Technology & Engineering categories.
This book introduces readers to the latest advances in sensing technology for a broad range of non-volatile memories (NVMs). Challenges across the memory technologies are highlighted and their solutions in mature technology are discussed, enabling innovation of sensing technologies for future NVMs. Coverage includes sensing techniques ranging from well-established NVMs such as hard disk, flash, Magnetic RAM (MRAM) to emerging NVMs such as ReRAM, STTRAM, FeRAM and Domain Wall Memory will be covered.