Germanium Silicon Strained Layers And Heterostructures
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Germanium Silicon Strained Layers And Heterostructures
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Author : Suresh C. Jain
language : en
Publisher:
Release Date : 1994
Germanium Silicon Strained Layers And Heterostructures written by Suresh C. Jain and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1994 with Science categories.
Biaxial strain in coherent GeSi layers grown on Si substrates provides a powerful tool for tailoring bandgaps and band offsets. Extremely high electron and hole mobilities have been obtained in modulation-doped GeSi strained layer heterostructures. Ultra-high-speed Heterojunction Bipolar Transistors and MODFETs, and long wavelength (1 to 20 micrometre) IR Detectors have been fabricated using these layers. Quantum wells, ultra-thin period superlattices, and quantum dots can also be fabricated using the strained layers. These devices were previously implemented using III-V semiconductors. Now they can be fabricated using existing Si technology, which is mature and reliable. GeSi strained layer technology has made it possible to manufacture monolithic Si integrated circuits containing heterojunction devices.
Silicon Germanium Strained Layers And Heterostructures
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Author : M. Willander
language : en
Publisher: Elsevier
Release Date : 2003-10-02
Silicon Germanium Strained Layers And Heterostructures written by M. Willander and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003-10-02 with Technology & Engineering categories.
The study of Silicone Germanium strained layers has broad implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. Since the publication of the original volume in 1994, there has been a steady flow of new ideas, new understanding, new Silicon-Germanium (SiGe) structures and new devices with enhanced performance. Written for both students and senior researchers, the 2nd edition of Silicon-Germanium Strained Layers and Heterostructures provides an essential up-date of this important topic, describing in particular the recent developments in technology and modelling. * Fully-revised and updated 2nd edition incorporating important recent breakthroughs and a complete literature review* The extensive bibliography of over 400 papers provides a comprehensive and coherent overview of the subject* Appropriate for students and senior researchers
Silicon Germanium Strained Layers And Heterostructures
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Author : M. Willander
language : en
Publisher: Academic Press
Release Date : 2003-10-20
Silicon Germanium Strained Layers And Heterostructures written by M. Willander and has been published by Academic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003-10-20 with Technology & Engineering categories.
The study of Silicone Germanium strained layers has broad implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. Since the publication of the original volume in 1994, there has been a steady flow of new ideas, new understanding, new Silicon-Germanium (SiGe) structures and new devices with enhanced performance. Written for both students and senior researchers, the 2nd edition of Silicon-Germanium Strained Layers and Heterostructures provides an essential up-date of this important topic, describing in particular the recent developments in technology and modelling. * Fully-revised and updated 2nd edition incorporating important recent breakthroughs and a complete literature review * The extensive bibliography of over 400 papers provides a comprehensive and coherent overview of the subject * Appropriate for students and senior researchers
Applications Of Silicon Germanium Heterostructure Devices
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Author : C.K Maiti
language : en
Publisher: CRC Press
Release Date : 2001-07-20
Applications Of Silicon Germanium Heterostructure Devices written by C.K Maiti and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2001-07-20 with Science categories.
The first book to deal with the design and optimization of transistors made from strained layers, Applications of Silicon-Germanium Heterostructure Devices combines three distinct topics-technology, device design and simulation, and applications-in a comprehensive way. Important aspects of the book include key technology issues for the growth of st
Sige And Si Strained Layer Epitaxy For Silicon Heterostructure Devices
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Author : John D. Cressler
language : en
Publisher: CRC Press
Release Date : 2017-12-19
Sige And Si Strained Layer Epitaxy For Silicon Heterostructure Devices written by John D. Cressler and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-12-19 with Technology & Engineering categories.
What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor “black arts” associated with the deposition of pristine films of nanoscale dimensionality onto enormous Si wafers with near infinite precision. We can now grow near-defect free, nanoscale films of Si and SiGe strained-layer epitaxy compatible with conventional high-volume silicon integrated circuit manufacturing. SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices tells the materials side of the story and details the many advances in the Si-SiGe strained-layer epitaxy for device applications. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume defines and details the many advances in the Si/SiGe strained-layer epitaxy for device applications. Mining the talents of an international panel of experts, the book covers modern SiGe epitaxial growth techniques, epi defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si, and Si-C alloys. It includes appendices on topics such as the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.
Gesi Strained Layers And Their Applications A Reprint Volume
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Author : A. M. Stoneham
language : en
Publisher: CRC Press
Release Date : 1995
Gesi Strained Layers And Their Applications A Reprint Volume written by A. M. Stoneham and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1995 with Art categories.
This volume presents key papers published in recent years dealing with silicon-germanium strained layers and their applications.Papers are presented in three groups, dealing with growth and mechanical properties of strained layers, electronic and optical properties, and applications, notably in novel diode and transistor designs and high performance optical detectors. The collected papers will be an ideal source for new researchers who need quick and easy access to an authoritative selection of high quality papers. An important aspect of the selection is the cross-disciplinary nature of the papers, presenting material from electronic engineers as well as from physicists and materials scientists. An extensive bibliography gives details of a further 250 papers on the subject.
Germanium Silicon Physics And Materials
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Author :
language : en
Publisher: Academic Press
Release Date : 1998-11-09
Germanium Silicon Physics And Materials written by and has been published by Academic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998-11-09 with Technology & Engineering categories.
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.
Strained Silicon Heterostructures
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Author : C. K. Maiti
language : en
Publisher: IET
Release Date : 2001
Strained Silicon Heterostructures written by C. K. Maiti and has been published by IET this book supported file pdf, txt, epub, kindle and other format this book has been release on 2001 with Technology & Engineering categories.
This book comprehensively covers the areas of materials growth, characterisation and descriptions for the new devices in siliconheterostructure material systems. In recent years, the development of powerful epitaxial growth techniques such as molecular beam epitaxy (MBE), ultra-high vacuum chemical vapour deposition (UHVCVD) and other low temperature epitaxy techniques has given rise to a new area of research of bandgap engineering in silicon-based materials. This has paved the way not only for heterojunction bipolar and field effect transistors, but also for other fascinating novel quantum devices. This book provides an excellent introduction and valuable references for postgraduate students and research scientists.
Silicon Heterostructure Handbook
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Author : John D. Cressler
language : en
Publisher: CRC Press
Release Date : 2018-10-03
Silicon Heterostructure Handbook written by John D. Cressler and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-10-03 with Technology & Engineering categories.
An extraordinary combination of material science, manufacturing processes, and innovative thinking spurred the development of SiGe heterojunction devices that offer a wide array of functions, unprecedented levels of performance, and low manufacturing costs. While there are many books on specific aspects of Si heterostructures, the Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained-Layer Epitaxy is the first book to bring all aspects together in a single source. Featuring broad, comprehensive, and in-depth discussion, this handbook distills the current state of the field in areas ranging from materials to fabrication, devices, CAD, circuits, and applications. The editor includes "snapshots" of the industrial state-of-the-art for devices and circuits, presenting a novel perspective for comparing the present status with future directions in the field. With each chapter contributed by expert authors from leading industrial and research institutions worldwide, the book is unequalled not only in breadth of scope, but also in depth of coverage, timeliness of results, and authority of references. It also includes a foreword by Dr. Bernard S. Meyerson, a pioneer in SiGe technology. Containing nearly 1000 figures along with valuable appendices, the Silicon Heterostructure Handbook authoritatively surveys materials, fabrication, device physics, transistor optimization, optoelectronics components, measurement, compact modeling, circuit design, and device simulation.
Sige And Si Strained Layer Epitaxy For Silicon Heterostructure Devices
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Author : John D. Cressler
language : en
Publisher:
Release Date : 2008
Sige And Si Strained Layer Epitaxy For Silicon Heterostructure Devices written by John D. Cressler and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008 with Bipolar transistors categories.