Gettering Anf Defect Engineering In Semiconductor Technology Ix
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Gettering And Defect Engineering In Semiconductor Technology Ix
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Author : Vito Raineri
language : en
Publisher: Trans Tech Publications Ltd
Release Date : 2001-11-30
Gettering And Defect Engineering In Semiconductor Technology Ix written by Vito Raineri and has been published by Trans Tech Publications Ltd this book supported file pdf, txt, epub, kindle and other format this book has been release on 2001-11-30 with Technology & Engineering categories.
Gettering and Defect Engineering in Semiconductor Technology are discussed here,with particular emphasis being placed on device applications. Fundamental aspects,as well as technological problems which are associated with defects in electronic materials and devices, are addressed. Volume is indexed by Thomson Reuters CPCI-S (WoS). The topics in this volume were selected on the basis that single-crystal Si, and Si-based, semiconductors will dominate microelectronics until far into the 21st century. The main reason for the overwhelming success of silicon technology is economic: the production cost per area increases by a factor of 5, or even 10, on going from 200 mm Si wafers to compound semiconductors or other substrate materials.
Gettering Anf Defect Engineering In Semiconductor Technology Ix
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Author :
language : en
Publisher:
Release Date : 2001
Gettering Anf Defect Engineering In Semiconductor Technology Ix written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2001 with categories.
Gettering and Defect Engineering in Semiconductor Technology are discussed here,with particular emphasis being placed on device applications. Fundamental aspects,as well as technological problems which are associated with defects in electronic materials and devices, are addressed. The topics in this volume were selected on the basis that single-crystal Si, and Si-based, semiconductors will dominate microelectronics until far into the 21st century. The main reason for the overwhelming success of silicon technology is economic: the production cost per area increases by a factor of 5, or even 10, on going from 200 mm Si wafers to compound semiconductors or other substrate materials. Furthermore, the unceasing efforts in research on Si-based materials have been able to overcome some of the most stringent limitations on a Si-based technology. In fact, demonstrations of the feasibility of integrating IV-IV heterostructures and light-emitting devices into silicon technology, together with the promise of 450mm wafers combined with 70 nm technology, seem set to maintain the performance advantages that cause more than 95% of all manufactured semiconductor devices to be fabricated in silicon. However, the demands for wider applications of solid-state electronics are increasing demands to be made for devices having higher performances or very special properties. This makes research, on advanced materials and devices which are based upon other semiconductors, a highly relevant strand of semiconductor research for the near future. These proceedings span a wide variety of topics: going from silicon crystal growth and substrates, to technological processes and analytical techniques, to dopant-defect interactions, gettering, Si opto-electronics, radiation-hardness and nanoelectronics. A small section is also dedicated to compound semiconductors and materials other than silicon.
Gettering And Defect Engineering In Semiconductor Technology Xv
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Author : J.D. Murphy
language : en
Publisher: Trans Tech Publications Ltd
Release Date : 2013-10-07
Gettering And Defect Engineering In Semiconductor Technology Xv written by J.D. Murphy and has been published by Trans Tech Publications Ltd this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-10-07 with Technology & Engineering categories.
The book includes both fundamental and technological aspects of defects in semiconductor materials and devices, including photovoltaics. Volume is indexed by Thomson Reuters CPCI-S (WoS). The 74 papers are grouped as follows: I. Defect engineering in silicon solar cells; II. Structural and production issues in cast silicon materials for solar cells; III. Characterisation of silicon for solar cells; IV. Intrinsic point defects in silicon; V. Light impurities in silicon-based materials; VI. Metals in silicon: fundamental properties and gettering; VII. Extended and implantation-related defects in silicon; VIII. Surfaces, passivation and processing; IX. Germanium-based devices and materials; X. Semiconductors other than silicon and germanium; XI. Nanostructures and new materials systems.
Gettering And Defect Engineering In Semiconductor Technology Xv
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Author : J. D. Murphy
language : en
Publisher:
Release Date : 2013
Gettering And Defect Engineering In Semiconductor Technology Xv written by J. D. Murphy and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013 with Getters categories.
The book includes both fundamental and technological aspects of defects in semiconductor materials and devices, including photovoltaics. The 74 papers are grouped as follows: I. Defect engineering in silicon solar cells; II. Structural and production issues in cast silicon materials for solar cells; III. Characterisation of silicon for solar cells; IV. Intrinsic point defects in silicon; V. Light impurities in silicon-based materials; VI. Metals in silicon: fundamental properties and gettering; VII. Extended and implantation-related defects in silicon; VIII. Surfaces, passivation and processing; IX. Germanium-based devices and materials; X. Semiconductors other than silicon and germanium; XI. Nanostructures and new materials systems. Review from Book News Inc.: The proceedings for GADEST 2013 contains 84 papers on such matters as defect engineering in silicon solar cells, structural and production issues in cast silicon materials for solar cells, characterizing silicon for solar cells, intrinsic point defects in silicon, light impurities in silicon-based materials, fundamental properties and gettering of metals in silicon, extended and implantation-related defects in silicon, germanium-based devices and materials, semiconductors other than silicon and germanium, and nanostructures and new materials systems.
Gettering And Defect Engineering In Semiconductor Technology X
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Author : Hans Richter
language : en
Publisher: Trans Tech Publications Ltd
Release Date : 2003-09-30
Gettering And Defect Engineering In Semiconductor Technology X written by Hans Richter and has been published by Trans Tech Publications Ltd this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003-09-30 with Technology & Engineering categories.
Volume is indexed by Thomson Reuters CPCI-S (WoS). This volume is a collection of papers presented at the 10th International Autumn Meeting on "Gettering and Defect Engineering in Semiconductor Technology - GADEST 2003," which took place from the 21st to the 26th of September 2003 at the Seehotel Zeuthen, in the state of Brandenburg, Germany. The Seehotel Zeuthen, near Berlin, was an excellent location at which to provide a forum for interactions between scientists and engineers engaged in the field of semiconductor defect physics, materials science and technology; and to reflect upon aspects of the coming era of conversion from micro-electronics to nano-electronics. In addition, a particular ambition was to strengthen the interactions and exchanges between communities working in the fields of crystalline silicon for electronics and photovoltaics.
Gettering And Defect Engineering In Semiconductor Technology Vii
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Author :
language : en
Publisher:
Release Date : 1997
Gettering And Defect Engineering In Semiconductor Technology Vii written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997 with categories.
Defect control relies more and more upon advanced fabrication approaches such as the use of slow pulling rates and hydrogen annealing. Gettering techniques remain of key importance in enhancing the device yield. This volume provides the most up-to-date information for scientists and engineers who are involved in the fields of semiconductor defect physics or materials science. Fundamental aspects, as well as technological problems, which are associated with defects in electronic materials and devices, are addressed. Due to the broad spectrum of topics covered, ranging from theoretical analyses to practical engineering solutions, the present book uniquely and complements others in the field. 1. Keynote Address. 2. Silicon Materials. 3. Gettering Techniques. 4. Oxygen in Silicon. 5. Erbium in Silicon. 6. Radiation Effects in Semiconductors. 7. Dislocations in Silicon. 8. Defect Engineering. 9. Advanced Semiconductor Materials and Devices. 10. Semiconductor Material and Device Diagnostics.
Gettering And Defect Engineering In Semiconductor Technology Xi
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Author : Bernard Pichaud
language : en
Publisher: Trans Tech Publications Ltd
Release Date : 2005-12-15
Gettering And Defect Engineering In Semiconductor Technology Xi written by Bernard Pichaud and has been published by Trans Tech Publications Ltd this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005-12-15 with Technology & Engineering categories.
Volume is indexed by Thomson Reuters CPCI-S (WoS). This proceedings volume contains 126 contributions from the 11th international meeting on Gettering and Defect Engineering in Semiconductor Technology GADEST 2005 held at La Badine at the Giens peninsula south of France.
Gettering And Defect Engineering In Semiconductor Technology Xiv
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Author : W. Jantsch
language : en
Publisher: Trans Tech Publications Ltd
Release Date : 2011-08-16
Gettering And Defect Engineering In Semiconductor Technology Xiv written by W. Jantsch and has been published by Trans Tech Publications Ltd this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011-08-16 with Technology & Engineering categories.
Volume is indexed by Thomson Reuters CPCI-S (WoS). The papers contained herein cover the most important and timely issues in the field of Gettering and Defect Engineering in Semiconductor Technology, ranging from the theoretical analysis of defect problems to practical engineering solutions, with the emphasis on Si-based materials. Apart from the traditional topics of defect and materials engineering, characterization, modeling and simulation, and the co-integration of various material classes, topics such as materials for solar cells and photonics are discussed. Defects in graphene and in nanocrystals and nanowires are also treated, making this a very up-to-date survey of the field.
Gettering And Defect Engineering In Semiconductor Technology Xii
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Author : Anna Cavallini
language : en
Publisher: Trans Tech Publications Ltd
Release Date : 2007-10-25
Gettering And Defect Engineering In Semiconductor Technology Xii written by Anna Cavallini and has been published by Trans Tech Publications Ltd this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007-10-25 with Technology & Engineering categories.
Volume is indexed by Thomson Reuters CPCI-S (WoS). This collection comprises 117 peerreviewed papers invited from over 70 research institutions in more than 25 countries. These papers, written by internationally recognized experts in the field, review the current state-of-the-art and predict future trends in their respective authors fields of research. Fundamental aspects, as well as technological problems associated with defects in electronic materials and devices, are addressed
Gettering And Defect Engineering In Semiconductor Technology Vii
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Author : Cor Claeys
language : en
Publisher: Trans Tech Publications Ltd
Release Date : 1997-07-25
Gettering And Defect Engineering In Semiconductor Technology Vii written by Cor Claeys and has been published by Trans Tech Publications Ltd this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997-07-25 with Technology & Engineering categories.
Defect control relies more and more upon advanced fabrication approaches such as the use of slow pulling rates and hydrogen annealing. Gettering techniques remain of key importance in enhancing the device yield.