Hot Carrier Design Considerations For Mos Devices And Circuits
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Hot Carrier Design Considerations For Mos Devices And Circuits
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Author : Cheng Wang
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Hot Carrier Design Considerations For Mos Devices And Circuits written by Cheng Wang and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Social Science categories.
As device dimensions decrease, hot-carrier effects, which are due mainly to the presence of a high electric field inside the device, are becoming a major design concern. On the one hand, the detrimental effects-such as transconductance degradation and threshold shift-need to be minimized or, if possible, avoided altogether. On the other hand, performance such as the programming efficiency of nonvolatile memories or the carrier velocity inside the devices-need to be maintained or improved through the use of submicron technologies, even in the presence of a reduced power supply. As a result, one of the major challenges facing MOS design engineers today is to harness the hot-carrier effects so that, without sacrificing product performance, degradation can be kept to a minimum and a reli able design obtained. To accomplish this, the physical mechanisms re sponsible for the degradations should first be experimentally identified and characterized. With adequate models thus obtained, steps can be taken to optimize the design, so that an adequate level of quality assur ance in device or circuit performance can be achieved. This book ad dresses these hot-carrier design issues for MOS devices and circuits, and is used primarily as a professional guide for process development engi neers, device engineers, and circuit designers who are interested in the latest developments in hot-carrier degradation modeling and hot-carrier reliability design techniques. It may also be considered as a reference book for graduate students who have some research interests in this excit ing, yet sometime controversial, field.
Electrical Characterization Of Silicon On Insulator Materials And Devices
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Author : Sorin Cristoloveanu
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-11-27
Electrical Characterization Of Silicon On Insulator Materials And Devices written by Sorin Cristoloveanu and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-11-27 with Technology & Engineering categories.
Silicon on Insulator is more than a technology, more than a job, and more than a venture in microelectronics; it is something different and refreshing in device physics. This book recalls the activity and enthu siasm of our SOl groups. Many contributing students have since then disappeared from the SOl horizon. Some of them believed that SOl was the great love of their scientific lives; others just considered SOl as a fantastic LEGO game for adults. We thank them all for kindly letting us imagine that we were guiding them. This book was very necessary to many people. SOl engineers will certainly be happy: indeed, if the performance of their SOl components is not always outstanding, they can now safely incriminate the relations given in the book rather than their process. Martine, Gunter, and Y. S. Chang can contemplate at last the amount of work they did with the figures. Our SOl accomplices already know how much we borrowed from their expertise and would find it indecent to have their detailed contri butions listed. Jean-Pierre and Dimitris incited the book, while sharing their experience in the reliability of floating bodies. Our families and friends now realize the SOl capability of dielectrically isolating us for about two years in a BOX. Our kids encouraged us to start writing. Our wives definitely gave us the courage to stop writing. They had a hard time fighting the symptoms of a rapidly developing SOl allergy.
Hot Carrier Effects In Mos Devices
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Author : Eiji Takeda
language : en
Publisher: Academic Press
Release Date : 1995
Hot Carrier Effects In Mos Devices written by Eiji Takeda and has been published by Academic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1995 with Juvenile Nonfiction categories.
The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications. They are rapidly movingout of the research lab and into the real world. This book is derived from Dr. Takedas book in Japanese, Hot-Carrier Effects, (published in 1987 by Nikkei Business Publishers). However, the new book is much more than a translation. Takedas original work was a starting point for developing this much more complete and fundamental text on this increasingly important topic. The new work encompasses not only all the latest research and discoveries made in the fast-paced area of hot carriers, but also includes the basics of MOS devices, and the practical considerations related to hot carriers. Chapter one itself is a comprehensive review of MOS device physics which allows a reader with little background in MOS devices to pick up a sufficient amount of information to be able to follow the rest of the book The book is written to allow the reader to learn about MOS Device Reliability in a relatively short amount of time, making the texts detailed treatment of hot-carrier effects especially useful and instructive to both researchers and others with varyingamounts of experience in the field The logical organization of the book begins by discussing known principles, then progresses to empirical information and, finally, to practical solutions Provides the most complete review of device degradation mechanisms as well as drain engineering methods Contains the most extensive reference list on the subject
Advanced Mos Device Physics
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Author : Norman Einspruch
language : en
Publisher: Elsevier
Release Date : 2012-12-02
Advanced Mos Device Physics written by Norman Einspruch and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-02 with Technology & Engineering categories.
VLSI Electronics Microstructure Science, Volume 18: Advanced MOS Device Physics explores several device physics topics related to metal oxide semiconductor (MOS) technology. The emphasis is on physical description, modeling, and technological implications rather than on the formal aspects of device theory. Special attention is paid to the reliability physics of small-geometry MOSFETs. Comprised of eight chapters, this volume begins with a general picture of MOS technology development from the device and processing points of view. The critical issue of hot-carrier effects is discussed, along with the device engineering aspects of this problem; the emerging low-temperature MOS technology; and the problem of latchup in scaled MOS circuits. Several device models that are suitable for use in circuit simulators are also described. The last chapter examines novel electron transport effects observed in ultra-small MOS structures. This book should prove useful to semiconductor engineers involved in different aspects of MOS technology development, as well as for researchers in this field and students of the corresponding disciplines.
Selected Semiconductor Research
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Author : Ming-Fu Li
language : en
Publisher: World Scientific
Release Date : 2011
Selected Semiconductor Research written by Ming-Fu Li and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011 with Technology & Engineering categories.
This book on solid state physics has been written with an emphasis on recent developments in quantum many-body physics approaches. It starts by covering the classical theory of solids and electrons and describes how this classical model has failed. The authors then present the quantum mechanical model of electrons in a lattice and they also discuss the theory of conductivity. Extensive reviews on the topic are provided in a compact manner so that any non-specialist can follow from the beginning.The authors cover the system of magnetism in a similar way and various problems in magnetic materials are discussed. The book also discusses the Ising chain, the Heisenberg model, the Kondo effect and superconductivity, amongst other relevant topics.In the final chapter, the authors present some works related to contemporary research topics, such as quantum entanglement in many-body systems and quantum simulations. They also include a short review of some of the possible applications of solid state quantum information in biological systems.
Linear Cmos Rf Power Amplifiers
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Author : Hector Solar Ruiz
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-09-14
Linear Cmos Rf Power Amplifiers written by Hector Solar Ruiz and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-09-14 with Technology & Engineering categories.
The work establishes the design flow for the optimization of linear CMOS power amplifiers from the first steps of the design to the final IC implementation and tests. The authors also focuses on design guidelines of the inductor’s geometrical characteristics for power applications and covers their measurement and characterization. Additionally, a model is proposed which would facilitate designs in terms of transistor sizing, required inductor quality factors or minimum supply voltage. The model considers limitations that CMOS processes can impose on implementation. The book also provides different techniques and architectures that allow for optimization.
Istfa 98
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Author : ASM International
language : en
Publisher: ASM International
Release Date : 1998-01-01
Istfa 98 written by ASM International and has been published by ASM International this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998-01-01 with Technology & Engineering categories.
Physical And Technical Problems Of Soi Structures And Devices
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Author : J.-P. Colinge
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Physical And Technical Problems Of Soi Structures And Devices written by J.-P. Colinge and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.
In Physical and Technical Problems of SOI Structures and Devices, specialists in silicon-on-insulator technology from both East and West meet for the first time, giving the reader the chance to become acquainted with work from the former Soviet Union, hitherto only available in Russian and barely available to western scientists. Keynote lectures and state-of-the-art presentations give a wide-ranging panorama of the challenges posed by SOI materials and devices, material fabrication techniques, characterisation, device and circuit issues.
Silicon Nitride And Silicon Dioxide Thin Insulating Films
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Author : M. Jamal Deen
language : en
Publisher: The Electrochemical Society
Release Date : 1997
Silicon Nitride And Silicon Dioxide Thin Insulating Films written by M. Jamal Deen and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997 with Science categories.
Thin Film Transistor Technologies Tftt Vii
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Author : Yue Kuo
language : en
Publisher: The Electrochemical Society
Release Date : 2005
Thin Film Transistor Technologies Tftt Vii written by Yue Kuo and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005 with Technology & Engineering categories.