[PDF] Hot Carrier Reliability Of Mos Vlsi Circuits - eBooks Review

Hot Carrier Reliability Of Mos Vlsi Circuits


Hot Carrier Reliability Of Mos Vlsi Circuits
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Hot Carrier Reliability Of Mos Vlsi Circuits


Hot Carrier Reliability Of Mos Vlsi Circuits
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Author : Yusuf Leblebici
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06

Hot Carrier Reliability Of Mos Vlsi Circuits written by Yusuf Leblebici and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.


As the complexity and the density of VLSI chips increase with shrinking design rules, the evaluation of long-term reliability of MOS VLSI circuits is becoming an important problem. The assessment and improvement of reliability on the circuit level should be based on both the failure mode analysis and the basic understanding of the physical failure mechanisms observed in integrated circuits. Hot-carrier induced degrada tion of MOS transistor characteristics is one of the primary mechanisms affecting the long-term reliability of MOS VLSI circuits. It is likely to become even more important in future generation chips, since the down ward scaling of transistor dimensions without proportional scaling of the operating voltage aggravates this problem. A thorough understanding of the physical mechanisms leading to hot-carrier related degradation of MOS transistors is a prerequisite for accurate circuit reliability evaluation. It is also being recognized that important reliability concerns other than the post-manufacture reliability qualification need to be addressed rigorously early in the design phase. The development and use of accurate reliability simulation tools are therefore crucial for early assessment and improvement of circuit reliability : Once the long-term reliability of the circuit is estimated through simulation, the results can be compared with predetermined reliability specifications or limits. If the predicted reliability does not satisfy the requirements, appropriate design modifications may be carried out to improve the resistance of the devices to degradation.



Reliability Of Cmos Analog Ics


Reliability Of Cmos Analog Ics
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Author : Hakan Kuntman
language : en
Publisher: Springer Nature
Release Date : 2025-07-14

Reliability Of Cmos Analog Ics written by Hakan Kuntman and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2025-07-14 with Technology & Engineering categories.


This book presents recent advances in reliability investigation of MOS transistors and their applications. Theory and experimental results are discussed, in order to demonstrate the efficacy of the techniques presented. Readers will be enabled to improve their designs in application areas of analog signal processing, ranging from very low frequencies at several Hz levels of biomedical signals to RF applications operating at GHz level, from EEG signals to cognitive radio and encrypted communications or low-noise amplifiers in wireless communications.



The Vlsi Handbook


The Vlsi Handbook
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Author : Wai-Kai Chen
language : en
Publisher: CRC Press
Release Date : 2019-07-17

The Vlsi Handbook written by Wai-Kai Chen and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-07-17 with Technology & Engineering categories.


Over the years, the fundamentals of VLSI technology have evolved to include a wide range of topics and a broad range of practices. To encompass such a vast amount of knowledge, The VLSI Handbook focuses on the key concepts, models, and equations that enable the electrical engineer to analyze, design, and predict the behavior of very large-scale integrated circuits. It provides the most up-to-date information on IC technology you can find. Using frequent examples, the Handbook stresses the fundamental theory behind professional applications. Focusing not only on the traditional design methods, it contains all relevant sources of information and tools to assist you in performing your job. This includes software, databases, standards, seminars, conferences and more. The VLSI Handbook answers all your needs in one comprehensive volume at a level that will enlighten and refresh the knowledge of experienced engineers and educate the novice. This one-source reference keeps you current on new techniques and procedures and serves as a review for standard practice. It will be your first choice when looking for a solution.



Microelectronic Manufacturing Yield Reliability And Failure Analysis


Microelectronic Manufacturing Yield Reliability And Failure Analysis
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Author :
language : en
Publisher:
Release Date : 1997

Microelectronic Manufacturing Yield Reliability And Failure Analysis written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997 with Integrated circuits categories.




On Optimal Interconnections For Vlsi


On Optimal Interconnections For Vlsi
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Author : Andrew B. Kahng
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-04-17

On Optimal Interconnections For Vlsi written by Andrew B. Kahng and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-04-17 with Technology & Engineering categories.


On Optimal Interconnections for VLSI describes, from a geometric perspective, algorithms for high-performance, high-density interconnections during the global and detailed routing phases of circuit layout. First, the book addresses area minimization, with a focus on near-optimal approximation algorithms for minimum-cost Steiner routing. In addition to practical implementations of recent methods, the implications of recent results on spanning tree degree bounds and the method of Zelikovsky are discussed. Second, the book addresses delay minimization, starting with a discussion of accurate, yet algorithmically tractable, delay models. Recent minimum-delay constructions are highlighted, including provably good cost-radius tradeoffs, critical-sink routing algorithms, Elmore delay-optimal routing, graph Steiner arborescences, non-tree routing, and wiresizing. Third, the book addresses skew minimization for clock routing and prescribed-delay routing formulations. The discussion starts with early matching-based constructions and goes on to treat zero-skew routing with provably minimum wirelength, as well as planar clock routing. Finally, the book concludes with a discussion of multiple (competing) objectives, i.e., how to optimize area, delay, skew, and other objectives simultaneously. These techniques are useful when the routing instance has heterogeneous resources or is highly congested, as in FPGA routing, multi-chip packaging, and very dense layouts. Throughout the book, the emphasis is on practical algorithms and a complete self-contained development. On Optimal Interconnections for VLSI will be of use to both circuit designers (CAD tool users) as well as researchers and developers in the area of performance-driven physical design.



System Integration


System Integration
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Author : Kurt Hoffmann
language : en
Publisher: John Wiley & Sons
Release Date : 2006-02-08

System Integration written by Kurt Hoffmann and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006-02-08 with Technology & Engineering categories.


The development of large-scale integrated systems on a chip has had a dramatic effect on circuit design methodology. Recent years have seen an escalation of interest in systems level integration (system-on-a-chip) and the development of low power, high chip density circuits and systems. Kurt Hoffmann sets out to address a wide range of issues relating to the design and integration of integrated circuit components and provides readers with the methodology by which simple equations for the estimation of transistor geometries and circuit behaviour can be deduced. The broad coverage of this unique book ranges from field effect transistor design, MOS transistor modelling and the fundamentals of digital CMOS circuit design through to MOS memory architecture and design. Highlights the increasing requirement for information on system-on-a-chip design and integration. Combines coverage of semiconductor physics, digital VLSI design and analog integrated circuits in one volume for the first time. Written with the aim of bridging the gap between semiconductor device physics and practical circuit design. Introduces the basic behaviour of semiconductor components for ICs and covers the design of both digital and analog circuits in CMOS and BiCMOS technologies. Broad coverage will appeal to both students and practising engineers alike. Written by a respected expert in the field with a proven track record of publications in this field. Drawing upon considerable experience within both industry and academia, Hoffmann’s outstanding text, will prove an invaluable resource for designers, practising engineers in the semiconductor device field and electronics systems industry as well as Postgraduate students of microelectronics, electrical and computer engineering.



Silicon Nitride Silicon Dioxide And Emerging Dielectrics 11


Silicon Nitride Silicon Dioxide And Emerging Dielectrics 11
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Author : Electrochemical society. Meeting
language : en
Publisher: The Electrochemical Society
Release Date : 2011

Silicon Nitride Silicon Dioxide And Emerging Dielectrics 11 written by Electrochemical society. Meeting and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011 with Science categories.


This issue of ECS Transactions contains the peer-reviewed full length papers of the International Symposium on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics held May 1-6, 2011 in Montreal as a part of the 219th Meeting of The Electrochemical Society. The papers address a very diverse range of topics. In addition to the deposition and characterization of the dielectrics, more specific topics addressed by the papers include applications, device characterization and reliability, interface states, interface traps, defects, transistor and gate oxide studies, and modeling.



The Physics And Chemistry Of Sio2 And The Si Sio2 Interface 4 2000


The Physics And Chemistry Of Sio2 And The Si Sio2 Interface 4 2000
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Author : Hisham Z. Massoud
language : en
Publisher:
Release Date : 2000

The Physics And Chemistry Of Sio2 And The Si Sio2 Interface 4 2000 written by Hisham Z. Massoud and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000 with Nature categories.




Mosfet Models For Vlsi Circuit Simulation


Mosfet Models For Vlsi Circuit Simulation
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Author : Narain D. Arora
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06

Mosfet Models For Vlsi Circuit Simulation written by Narain D. Arora and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Computers categories.


Metal Oxide Semiconductor (MOS) transistors are the basic building block ofMOS integrated circuits (I C). Very Large Scale Integrated (VLSI) circuits using MOS technology have emerged as the dominant technology in the semiconductor industry. Over the past decade, the complexity of MOS IC's has increased at an astonishing rate. This is realized mainly through the reduction of MOS transistor dimensions in addition to the improvements in processing. Today VLSI circuits with over 3 million transistors on a chip, with effective or electrical channel lengths of 0. 5 microns, are in volume production. Designing such complex chips is virtually impossible without simulation tools which help to predict circuit behavior before actual circuits are fabricated. However, the utility of simulators as a tool for the design and analysis of circuits depends on the adequacy of the device models used in the simulator. This problem is further aggravated by the technology trend towards smaller and smaller device dimensions which increases the complexity of the models. There is extensive literature available on modeling these short channel devices. However, there is a lot of confusion too. Often it is not clear what model to use and which model parameter values are important and how to determine them. After working over 15 years in the field of semiconductor device modeling, I have felt the need for a book which can fill the gap between the theory and the practice of MOS transistor modeling. This book is an attempt in that direction.



Bicmos Technology And Applications


Bicmos Technology And Applications
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Author : Antonio R. Alvarez
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06

Bicmos Technology And Applications written by Antonio R. Alvarez and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.


BiCMOS Technology and Applications, Second Edition provides a synthesis of available knowledge about the combination of bipolar and MOS transistors in a common integrated circuit - BiCMOS. In this new edition all chapters have been updated and completely new chapters on emerging topics have been added. In addition, BiCMOS Technology and Applications, Second Edition provides the reader with a knowledge of either CMOS or Bipolar technology/design a reference with which they can make educated decisions regarding the viability of BiCMOS in their own application. BiCMOS Technology and Applications, Second Edition is vital reading for practicing integrated circuit engineers as well as technical managers trying to evaluate business issues related to BiCMOS. As a textbook, this book is also appropriate at the graduate level for a special topics course in BiCMOS. A general knowledge in device physics, processing and circuit design is assumed. Given the division of the book, it lends itself well to a two-part course; one on technology and one on design. This will provide advanced students with a good understanding of tradeoffs between bipolar and MOS devices and circuits.