Inp Gaassb Inp Double Heterojunction Bipolar Transistors
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Inp Gaassb Inp Double Heterojunction Bipolar Transistors
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Author : C. R. Bolgnesi
language : en
Publisher:
Release Date : 2002
Inp Gaassb Inp Double Heterojunction Bipolar Transistors written by C. R. Bolgnesi and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002 with categories.
InP/GaAsSb/InP double heterojunction bipolar transistors (DHBTs) are some of the fastest bipolar transistors ever fabricated, with current gain cutoff and maximum oscillation frequencies simultaneously exceeding 300 GHz while maintaining breakdown voltages BV(sub ceo> 6V I. InP/GaAsSb/InP DHBTs are particularly appealing because excellent device figures of merit are achievable with relatively simple structures involving abrupt junctions and uniform doping levels and compositions. This is a tremendous manufacturability advantage and the reason why some organizations have moved aggressively toward GaAsSb DHBT production despite a relative scarcity of information on the physical properties of the GaAsSb alloy in comparison to GalnAs. The present paper reviews some of the key concepts associated with the use of GaAsSb base layers, and discusses the physical operation InP/GaAsSb/InP DHBTs. In particular, we will describe the implications of the staggered band lineup at the E/B and B/C heterojunctions for charge storage in the devices, and show that InP/GaAsSb/InP DHBTs offer inherent advantages from that point of view. We will also show that GaAsSb based DHBTs can be expected to display better scalability than GainAs-based devices because of their inherently superior base Ohmic contacts.
Design Simulation And Modelling Of Inp Gaassb Inp Double Heterojunction Bipolar Transistors
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Author :
language : en
Publisher:
Release Date : 2003
Design Simulation And Modelling Of Inp Gaassb Inp Double Heterojunction Bipolar Transistors written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003 with categories.
Device modeling using a two dimensional, drift-diffusion approach utilizing a commercial numerical device simulator has been used to investigate the operation and performance of InP/GaAsSb heterojunction bipolar transistors (HBTs). GaAsSb lattice matched to InP has an energy bandgap (0.72 eV) that is similar to that of InGaAs (0.75eV) so that Sb-based HBTs have been proposed as a replacement for InGaAs-based HBTs. In particular, the conduction band lineup is more favorable at the base-collector, which makes the GaAsSb-based HBTs especially attractive for double heterojunction bipolar transistors (DHBTs) where higher breakdown voltages are desired. In this work, the results of device modeling will be compared initially with recent experimental reports to validate the modeling approach. Then the design and operation of the devices will be examined to investigate the factors controlling device performance in order to facilitate improvements in device design. The degradation of device performance at high currents due to the formation of a parasitic barrier in the collector region and the base push out effects is examined. Finally, a device structure with improved high frequency performance is described.
Sub Micron Inp Gaassb Inp Double Heterojunction Bipolar Transistors For Ultra High Speed Digital Integrated Circuits
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Author : Urs Hammer
language : en
Publisher:
Release Date : 2010
Sub Micron Inp Gaassb Inp Double Heterojunction Bipolar Transistors For Ultra High Speed Digital Integrated Circuits written by Urs Hammer and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010 with Bipolar transistors categories.
Development Of High Speed Type Ii Gaassb Inp Double Heterojunction Bipolar Transistors
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Author : Benjamin Chu-Kung
language : en
Publisher:
Release Date : 1972
Development Of High Speed Type Ii Gaassb Inp Double Heterojunction Bipolar Transistors written by Benjamin Chu-Kung and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1972 with categories.
Design Fabrication And Characterization Of Ultra High Speed Inp Gaassb Inp Double Heterojunction Bipolar Transistors
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Author : Martin W. Dvorak
language : en
Publisher:
Release Date : 2001
Design Fabrication And Characterization Of Ultra High Speed Inp Gaassb Inp Double Heterojunction Bipolar Transistors written by Martin W. Dvorak and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2001 with Bipolar transistors categories.
Development Of Sub Millimeter Wave Inp Gaassb Double Heterojunction Bipolar Transistors
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Author : Rickard Lövblom
language : en
Publisher:
Release Date : 2014
Development Of Sub Millimeter Wave Inp Gaassb Double Heterojunction Bipolar Transistors written by Rickard Lövblom and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014 with categories.
Development And Optimization Of High Speed Inp Gaassb Double Heterojunction Bipolar Transistors
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Author : Maria Alexandrova
language : en
Publisher:
Release Date : 2015
Development And Optimization Of High Speed Inp Gaassb Double Heterojunction Bipolar Transistors written by Maria Alexandrova and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015 with categories.
Characterization Simulation And Optimization Of Type Ii Gaassb Based Double Heterojunction Bipolar Transistors
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Author : Nick Gengming Tao
language : en
Publisher:
Release Date : 2006
Characterization Simulation And Optimization Of Type Ii Gaassb Based Double Heterojunction Bipolar Transistors written by Nick Gengming Tao and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006 with Bipolar transisitors categories.
In recent years, GaAsSb/InP double heterojunction bipolar transistors (DHBTs) have been demonstrated to be promising alternatives to InP/InGaAs HBTs, for next generation microwave/millimeter wave applications and optoelectronic integrated circuits (OEICs). However, GaAsSb-based DHBTs featuring the novel base material and type-II band alignment have not been well studied. This thesis investigated type-II GaAsSb DHBTs in the following aspects: periphery surface recombination current, Kirk effect, two dimensional (2D) simulation and device optimization. The present work provided insights into device operation, and guidances for further device development. A series of physical models and parameters was implemented in 2D device simulations using ISE TCAD. Band gap narrowing (BGN) in the bases was characterized by comparing experimental and simulated results. Excellent agreements between the measured and simulated DC and RF results were achieved. Emitter size effects associated with the surface recombination current were experimentally characterized for emitter sizes of 0.5 by 6 to 80 by 80 square micrometer. The 2D simulations by implementing surface state models revealed the mechanism for the surface recombination current. Two device structures were proposed to diminish surface recombination current. Numerical simulations for type-II GaAsSb-InP base-collector (BC) junctions showed that conventional base "push-out" does not occur at high injection levels, and instead the electric field at the BC junction is reversed and an electron barrier at the base side evolves. The electron barrier was found to play an important role in the Kirk effect, and the electron tunnelling through the barrier delays the onset of the Kirk effect. This novel mechanism was supported by the measurement for GaAsSb/InP DHBTs with two base doping levels. The study also showed that the magnitude of the electric field at the BC junction at zero collector current directly affects onset of the Kirk effect. Finally, optimizations for the emitter, base and collector were carried out through 2D simulations. A thin InAlAs emitter, an (Al)GaAsSb compositionally graded base with band gap variance of 0.1eV, and a high n-type delta doping in the collector were proposed to simultaneously achieve high frequency performance, high Kirk current density and high breakdown voltage.
Inp Based Double Heterojunction Bipolar Transistorwith Carbon Doped Gaassb C Base Grown By Lp Movpe
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Author :
language : en
Publisher:
Release Date : 2003
Inp Based Double Heterojunction Bipolar Transistorwith Carbon Doped Gaassb C Base Grown By Lp Movpe written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003 with categories.
We present the growth of highly carbon doped GaAsSb on InP substrate with LP-MOVPE and nitrogen carrier gas. Carbon doped GaAsSb lattice matched on InP are of pronounced interest for high speed double heterostructure bipolar transistors (DHBTs). We observed a significant effect of the nitrogen carrier gas on the growth behaviour which results in lower distribution coefficients. A linear doping behaviour with small CBr4 flows up to p=4 x 10 19 cm-3 can be observed and first realized DHBT structures shown fT and fmax values of 100 GHz and 60GHz, respectively.
A Gaassb Inp Hbt Circuit Technology
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Author :
language : en
Publisher:
Release Date : 2005
A Gaassb Inp Hbt Circuit Technology written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005 with categories.
A InP/GaAsSb/InP double-heterojunction bipolar transistor (DHBT) structure has been defined, realized by MBE epitaxy, and optimized, thanks to simulation based on in-depth physical characterizations. A circuit-oriented technology has been developed, which has been validated by the design and fabrication of a full-rate (40 GHz clock) 40 Gbit/s D-FF.