Investigation Of Advanced Gan Hemts For Digital And High Frequency Applications
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Investigation Of Advanced Gan Hemts For Digital And High Frequency Applications
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Author : Nader Al Mustafa
language : en
Publisher:
Release Date : 2020
Investigation Of Advanced Gan Hemts For Digital And High Frequency Applications written by Nader Al Mustafa and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2020 with categories.
Nanoelectronic Devices And Applications
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Author : Trupti Ranjan Lenka
language : en
Publisher: Bentham Science Publishers
Release Date : 2024-07-02
Nanoelectronic Devices And Applications written by Trupti Ranjan Lenka and has been published by Bentham Science Publishers this book supported file pdf, txt, epub, kindle and other format this book has been release on 2024-07-02 with Technology & Engineering categories.
Nanoelectronic Devices and Applications presents reviews on recent advances in nanoelectronic device design and new directions for their practical use. The volume includes 16 edited chapters that cover novel material systems, band engineering, modelling and simulations, fabrication and characterization techniques, and their emerging applications. The discussions presented in this book are based on current understandings on innovations and future trends, and references are provided for advanced scholars. Chapter 1 presents an overview of recent innovations and future prospects in III-nitride semiconductor technologies for RF, power, digital and quantum applications. Chapter 2 reports new trends in GaN-based optical devices for sensing and micro-display applications. Chapter 3 shows current interests in nanophosphors and their utilizations in improving device performance of InGaN nanowire light-emitting diodes (LEDs). Recent studies on the effect of potential profile on the carrier transport in AlGaAs based double quantum well structures and their applications are presented in Chapter 4. The recent progress in high-electron-mobility transistors (HEMTs) is presented through Chapters 5, 6, and 7. A comprehensive review on β-Ga2O3 emphasizing material properties, growth approaches, and its applications for next-generation high-power nanoelectronics; the effect of dielectric layers on the characteristics of AlN/β-Ga2O3 HEMTs are presented in Chapter 8 and 9 respectively. Chapters 10-14 summarize the recent studies in field-effect transistors (FETs) adopting different materials and structures. Chapter 15 presents current research in 2D Tungsten Diselenide (WSe2) with special focus on the material properties, device structures, applications, and challenges. Finally, Chapter 16 presents a systematic review of memristors, and memristive semiconductor devices. The book is intended as a primary resource for elective subjects in advanced electronics and computer engineering courses at university level. Researchers and industry professionals will also learn about emerging trends and state-of-the-art research in nanoelectronics.
Advanced Indium Arsenide Based Hemt Architectures For Terahertz Applications
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Author : N. Mohankumar
language : en
Publisher: CRC Press
Release Date : 2021-09-28
Advanced Indium Arsenide Based Hemt Architectures For Terahertz Applications written by N. Mohankumar and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021-09-28 with Science categories.
High electron mobility transistor (HEMT) has better performance potential than the conventional MOSFETs. Further, InAs is a perfect candidate for the HEMT device architecture owing to its peak electron mobility. Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications characterizes the HEMT based on InAs III-V material to achieve outstanding current and frequency performance. This book explains different types of device architectures available to enhance performance including InAs-based single gate (SG) HEMT and double gate (DG) HEMT. The noise analysis of InAs-based SG and DG-HEMT is also discussed. The main goal of this book is to characterize the InAs device to achieve terahertz frequency regime with proper device parameters. Features: Explains the influence of InAs material in the performance of HEMTs and MOS-HEMTs. Covers novel indium arsenide architectures for achieving terahertz frequencies Discusses impact of device parameters on frequency response Illustrates noise characterization of optimized indium arsenide HEMTs Introduces terahertz electronics including sources for terahertz applications. This book is of special interest to researchers and graduate students in Electronics Engineering, High Electron Mobility Transistors, Semi-conductors, Communications, and Nanodevices.
Antenna In Package Technology And Applications
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Author : Duixian Liu
language : en
Publisher: John Wiley & Sons
Release Date : 2020-03-31
Antenna In Package Technology And Applications written by Duixian Liu and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2020-03-31 with Technology & Engineering categories.
A comprehensive guide to antenna design, manufacturing processes, antenna integration, and packaging Antenna-in-Package Technology and Applications contains an introduction to the history of AiP technology. It explores antennas and packages, thermal analysis and design, as well as measurement setups and methods for AiP technology. The authors—well-known experts on the topic—explain why microstrip patch antennas are the most popular and describe the myriad constraints of packaging, such as electrical performance, thermo-mechanical reliability, compactness, manufacturability, and cost. The book includes information on how the choice of interconnects is governed by JEDEC for automatic assembly and describes low-temperature co-fired ceramic, high-density interconnects, fan-out wafer level packaging–based AiP, and 3D-printing-based AiP. The book includes a detailed discussion of the surface laminar circuit–based AiP designs for large-scale mm-wave phased arrays for 94-GHz imagers and 28-GHz 5G New Radios. Additionally, the book includes information on 3D AiP for sensor nodes, near-field wireless power transfer, and IoT applications. This important book: • Includes a brief history of antenna-in-package technology • Describes package structures widely used in AiP, such as ball grid array (BGA) and quad flat no-leads (QFN) • Explores the concepts, materials and processes, designs, and verifications with special consideration for excellent electrical, mechanical, and thermal performance Written for students in electrical engineering, professors, researchers, and RF engineers, Antenna-in-Package Technology and Applications offers a guide to material selection for antennas and packages, antenna design with manufacturing processes and packaging constraints, antenna integration, and packaging.
Comprehensive Semiconductor Science And Technology
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Author :
language : en
Publisher: Newnes
Release Date : 2011-01-28
Comprehensive Semiconductor Science And Technology written by and has been published by Newnes this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011-01-28 with Technology & Engineering categories.
Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts
Gan Transistors For Efficient Power Conversion
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Author : Alex Lidow
language : en
Publisher: John Wiley & Sons
Release Date : 2019-09-30
Gan Transistors For Efficient Power Conversion written by Alex Lidow and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-09-30 with Science categories.
An up-to-date, practical guide on upgrading from silicon to GaN, and how to use GaN transistors in power conversion systems design This updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout, and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. GaN Transistors for Efficient Power Conversion, 3rd Edition brings key updates to the chapters of Driving GaN Transistors; Modeling, Simulation, and Measurement of GaN Transistors; DC-DC Power Conversion; Envelope Tracking; and Highly Resonant Wireless Energy Transfer. It also offers new chapters on Thermal Management, Multilevel Converters, and Lidar, and revises many others throughout. Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications Updated with 35% new material, including three new chapters on Thermal Management, Multilevel Converters, Wireless Power, and Lidar Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors A valuable resource for professional engineers, systems designers, and electrical engineering students who need to fully understand the state-of-the-art GaN Transistors for Efficient Power Conversion, 3rd Edition is an essential learning tool and reference guide that enables power conversion engineers to design energy-efficient, smaller, and more cost-effective products using GaN transistors.
Handbook For Iii V High Electron Mobility Transistor Technologies
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Author : D. Nirmal
language : en
Publisher: CRC Press
Release Date : 2019-05-14
Handbook For Iii V High Electron Mobility Transistor Technologies written by D. Nirmal and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-05-14 with Science categories.
This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots
Performance Optimization Techniques In Analog Mixed Signal And Radio Frequency Circuit Design
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Author : Fakhfakh, Mourad
language : en
Publisher: IGI Global
Release Date : 2014-10-31
Performance Optimization Techniques In Analog Mixed Signal And Radio Frequency Circuit Design written by Fakhfakh, Mourad and has been published by IGI Global this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-10-31 with Technology & Engineering categories.
Improving the performance of existing technologies has always been a focal practice in the development of computational systems. However, as circuitry is becoming more complex, conventional techniques are becoming outdated and new research methodologies are being implemented by designers. Performance Optimization Techniques in Analog, Mixed-Signal, and Radio-Frequency Circuit Design features recent advances in the engineering of integrated systems with prominence placed on methods for maximizing the functionality of these systems. This book emphasizes prospective trends in the field and is an essential reference source for researchers, practitioners, engineers, and technology designers interested in emerging research and techniques in the performance optimization of different circuit designs.
Power Electronics And Motor Drive Systems
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Author : Stefanos Manias
language : en
Publisher: Academic Press
Release Date : 2016-11-08
Power Electronics And Motor Drive Systems written by Stefanos Manias and has been published by Academic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-11-08 with Technology & Engineering categories.
Power Electronics and Motor Drive Systems is designed to aid electrical engineers, researchers, and students to analyze and address common problems in state-of-the-art power electronics technologies. Author Stefanos Manias supplies a detailed discussion of the theory of power electronics circuits and electronic power conversion technology systems, with common problems and methods of analysis to critically evaluate results. These theories are reinforced by simulation examples using well-known and widely available software programs, including SPICE, PSIM, and MATLAB/SIMULINK. Manias expertly analyzes power electronic circuits with basic power semiconductor devices, as well as the new power electronic converters. He also clearly and comprehensively provides an analysis of modulation and output voltage, current control techniques, passive and active filtering, and the characteristics and gating circuits of different power semiconductor switches, such as BJTs, IGBTs, MOSFETs, IGCTs, MCTs and GTOs. - Includes step-by-step analysis of power electronic systems - Reinforced by simulation examples using SPICE, PSIM, and MATLAB/SIMULINK - Provides 110 common problems and solutions in power electronics technologies
Gallium Nitride And Related Wide Bandgap Materials And Devices
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Author : R. Szweda
language : en
Publisher: Elsevier
Release Date : 2000-07-07
Gallium Nitride And Related Wide Bandgap Materials And Devices written by R. Szweda and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000-07-07 with Business & Economics categories.
The second edition of Gallium Nitride & Related Wide Bandgap Materials and Devices provides a detailed insight into the global developments in GaN, SiC and other optoelectronic materials. This report also examines the implication for both suppliers and users of GaN technology. For a PDF version of the report please call Tina Enright on +44 (0) 1865 843008 for price details.