Investigation Of Gallium Nitride Transistor Reliability Through Accelerated Life Testing And Modeling
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Investigation Of Gallium Nitride Transistor Reliability Through Accelerated Life Testing And Modeling
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Author : Bradley D. Christiansen
language : en
Publisher:
Release Date : 2011
Investigation Of Gallium Nitride Transistor Reliability Through Accelerated Life Testing And Modeling written by Bradley D. Christiansen and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011 with Gallium nitride categories.
Quantitative Spectroscopy Of Reliability Limiting Traps In Operational Gallium Nitride Based Transistors Using Thermal And Optical Methods
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Author : Anup Sasikumar
language : en
Publisher:
Release Date : 2014
Quantitative Spectroscopy Of Reliability Limiting Traps In Operational Gallium Nitride Based Transistors Using Thermal And Optical Methods written by Anup Sasikumar and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014 with categories.
Gallium nitride (GaN) based high electron mobility transistors (HEMTs) have shown a lot of promise in high voltage, high power, and high radiation applications. However the full realization of the III-nitride potential and large scale adoption of this technology has been hindered by the existence of electrically active defects that manifest as deep levels in the energy bandgap. These deep levels can potentially act as charge trapping centers limiting device performance and long term reliability. It is therefore imperative to monitor these traps in operational GaN HEMTs as close as possible to their real world operational conditions. With that goal in mind, in this dissertation, a suite of advanced thermal and optical based trap spectroscopy methods and models collectively known as constant drain current deep level (thermal) transient spectroscopy and deep level optical spectroscopy (CID-DLTS/DLOS) were developed and expanded upon to directly probe and track traps in three terminal operational GaN HEMTs. These techniques have allowed an unprecedented ability to quantitatively track trap levels throughout the wide bandgap of operational GaN devices. Depending on their mode of switching (gate-controlled versus drain-controlled) the techniques are able to distinguish between under gate and access region defects irrespective of device design and/or operational history. The devices studied here were subjected to a range of different stressors and very different trap induced degradation mechanisms were identified that further confirms the need for such high resolution defect spectroscopic studies in GaN HEMTs. Specifically the GaN HEMTs studied here were subjected to three very different kinds of stressors, i) high frequency moderate drain voltage (50 V) accelerated lifetime stressor were applied to GaN HEMTs optimized for radio frequency (RF) applications, ii) very high off-state drain voltage (up to 600 V) stressors were applied to GaN-on-Si MISHEMTs optimized for power switching applications, and iii) high energy particle irradiation (in this case 1.8 MeV protons) stressor applied to high frequency GaN HEMTs targeted for RF space applications. In the case of the RF accelerated electrical life testing, the GaN HEMTs over an array of different suppliers (mostly commercial) showed the signature of a EC-0.57 eV trap that was was identified as occurring almost ubiquitously. This trap was determined to be causing knee-walkout degradation, drain-lag and linked directly to RF output power loss through its trapping/detrapping activity in the drain access region. This level was unambiguously located in the GaN buffer using a combination of CID-DLTS, and supporting nano-scale DLTS/DLOS approaches. It was observed that the detection of this buffer trap was observed to be highly dependent on the reverse gate leakage of the GaN HEMTs and an empirical leakage based filling model was proposed to describe the electron capture process in HEMTs with leakage (10-7 A/mm). In contrast, for GaN HEMTs with very low reverse gate leakage (
Reliabilitystudy Of Power Gallium Nitride Transistors
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Author :
language : en
Publisher: Marcon Denis
Release Date :
Reliabilitystudy Of Power Gallium Nitride Transistors written by and has been published by Marcon Denis this book supported file pdf, txt, epub, kindle and other format this book has been release on with categories.
Modeling Reliability Of Gallium Nitride High Electron Mobility Transistors
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Author : Balaji Padmanabhan
language : en
Publisher:
Release Date : 2013
Modeling Reliability Of Gallium Nitride High Electron Mobility Transistors written by Balaji Padmanabhan and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013 with Couplings categories.
This work is focused on modeling the reliability concerns in GaN HEMT technology. The two main reliability concerns in GaN HEMTs are electromechanical coupling and current collapse. A theoretical model was developed to model the piezoelectric polarization charge dependence on the applied gate voltage. As the sheet electron density in the channel increases, the influence of electromechanical coupling reduces as the electric field in the comprising layers reduces. A Monte Carlo device simulator that implements the theoretical model was developed to model the transport in GaN HEMTs. It is observed that with the coupled formulation, the drain current degradation in the device varies from 2%-18% depending on the gate voltage. Degradation reduces with the increase in the gate voltage due to the increase in the electron gas density in the channel. The output and transfer characteristics match very well with the experimental data. An electro-thermal device simulator was developed coupling the Monte Caro-Poisson solver with the energy balance solver for acoustic and optical phonons. An output current degradation of around 2-3 % at a drain voltage of 5V due to self-heating was observed. It was also observed that the electrostatics near the gate to drain region of the device changes due to the hot spot created in the device from self heating. This produces an electric field in the direction of accelerating the electrons from the channel to surface states. This will aid to the current collapse phenomenon in the device. Thus, the electric field in the gate to drain region is very critical for reliable performance of the device. Simulations emulating the charging of the surface states were also performed and matched well with experimental data. Methods to improve the reliability performance of the device were also investigated in this work. A shield electrode biased at source potential was used to reduce the electric field in the gate to drain extension region. The hot spot position was moved away from the critical gate to drain region towards the drain as the shield electrode length and dielectric thickness were being altered.
Thermal Management Of Gallium Nitride Electronics
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Author : Marko Tadjer
language : en
Publisher: Woodhead Publishing
Release Date : 2022-07-13
Thermal Management Of Gallium Nitride Electronics written by Marko Tadjer and has been published by Woodhead Publishing this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-07-13 with Technology & Engineering categories.
Thermal Management of Gallium Nitride Electronics outlines the technical approaches undertaken by leaders in the community, the challenges they have faced, and the resulting advances in the field. This book serves as a one-stop reference for compound semiconductor device researchers tasked with solving this engineering challenge for future material systems based on ultra-wide bandgap semiconductors. A number of perspectives are included, such as the growth methods of nanocrystalline diamond, the materials integration of polycrystalline diamond through wafer bonding, and the new physics of thermal transport across heterogeneous interfaces. Over the past 10 years, the book's authors have performed pioneering experiments in the integration of nanocrystalline diamond capping layers into the fabrication process of compound semiconductor devices. Significant research efforts of integrating diamond and GaN have been reported by a number of groups since then, thus resulting in active thermal management options that do not necessarily lead to performance derating to avoid self-heating during radio frequency or power switching operation of these devices. Self-heating refers to the increased channel temperature caused by increased energy transfer from electrons to the lattice at high power. This book chronicles those breakthroughs. Includes the fundamentals of thermal management of wide-bandgap semiconductors, with historical context, a review of common heating issues, thermal transport physics, and characterization methods Reviews the latest strategies to overcome heating issues through materials modeling, growth and device design strategies Touches on emerging, real-world applications for thermal management strategies in power electronics
Thermal Optimization And Validation Of Gan High Electron Mobility Transistor
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Author : Tanmay Pradip Kavade
language : en
Publisher:
Release Date : 2017
Thermal Optimization And Validation Of Gan High Electron Mobility Transistor written by Tanmay Pradip Kavade and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017 with categories.
Gallium Nitride (GaN) is a binary III/V wide band gap semiconductor used in power electronics for operations at high power densities and high speeds. GaN has excellent characteristics like high break-down voltage, high thermal conductivity, and high electron saturation velocity which have led to an intensive study and wide use of GaN in many fields. Some of these fields range from amplifiers, MMIC, laser diodes, pulsed radars and counter-IED jammers to CAT-V modules and fourth generation infrastructure base-stations. In this study package level thermal analysis and management of GaN high electron mobility transistor was carried out for determination of junction temperature and junction-case thermal resistance (Rjc). Two commercially available models were used as a reference for analysis. The sizes for both the models were 3 x 3 mm and 4 x 4 mm with host substrate SiC and Si respectively. The model considers the thickness of GaN and host substrate layers, the gate pitch, length, width, and thermal conductivity of GaN, and host substrate. The analysis is carried out on FEA software. Initially mesh sensitivity analysis was carried out to determine the best possible grid count for CFD analysis. Both the models were analyzed for steady state condition at various radio frequency power output to map the increment in the junction temperature. A parametric study is being carried out to optimize and reduce the maximum junction temperature and junction to case thermal resistance (Rjc) by providing convective air cooling and heat sink. The other part of this study includes optimization of the model using diamond as the host substrate and ceramic as mold compound material to monitor the decrease in the thermal resistance value. Comparative results in this study show the percentage reduction in the estimated Rjc value. Thermal resistance value is estimated using the below formula, Rjc = Tj - Tc / P From the results obtained a significant reduction in the estimated Rjc value was observed when compared for no flow, air flow with heat-sink, different host substrate and different mold compound material conditions. In conclusion GaN HEMT can be optimized to achieve a significant improvement in operation. This would allow operation of GaN devices at high temperature without damaging the reliability and operation life-span.
Reliability And Failure Analysis Of Gan On Si Power Devices
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Author : Wen Yang
language : en
Publisher:
Release Date : 2021
Reliability And Failure Analysis Of Gan On Si Power Devices written by Wen Yang and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021 with categories.
Wide bandgap power semiconductor devices, especially Gallium Nitride (GaN) high electron mobility transistors (HEMTs), have gained a lot of attention for high power applications due to their low on-resistance and high switching speed compared to their silicon counterparts. However, the reliability and failure issues related to dynamic performance, gate reliability, and electrostatic discharge have limited the wide applications of GaN power devices. This dissertation presents a systematic study of reliability and failure analysis of GaN-on-Si power devices. Firstly, the correlation between the physical trap mechanisms and the dynamic on-resistance (R[subscript on]) degradation has been investigated using a multi-frequency C-V measurement during pulse-mode stress. The experimental results indicate that the deep-level traps originated from the buffer layer play a dominant role in the dynamic R[subscript on] degradation. Secondly, the Si substrate in GaN-on-Si lateral power devices can be used as an independent contact termination rather than a thermal cooling pad. Therefore, the substrate bias effect in dynamic R[subscript on] and Gate Charge (Q[subscript g]) is necessary to explore both conduction and switching loss in GaN-based converter. A reverse dual polarity (RDP) substrate pulse technique has been developed to mitigate the dynamic R[subscript on] degradation. Thirdly, the gate reliability issues, including Time-dependent dielectric breakdown (TDDB), and Bias Temperature Instability (BTI) have been explored to improve the current capability. The physical model of TDDB in GaN power devices has been established by applying the substrate biases. And three phases of threshold voltage degradation have been presented under Negative Bias Temperature Instability stress. Lastly, the ESD characteristics of GaN power devices are considered for the development of a monolithic GaN-on-Si platform. The breakdown mechanisms under ESD stress have been comprehensively studied using Transmission Line Pulse (TLP) and Very-fast Transmission Line Pulse (VFTLP) measurements.
Effects Of Gate Stress And Parasitic Package Inductance On The Reliability Of Gan Hemts
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Author : Cheikh Abdoulahi Tine
language : en
Publisher:
Release Date : 2017
Effects Of Gate Stress And Parasitic Package Inductance On The Reliability Of Gan Hemts written by Cheikh Abdoulahi Tine and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017 with Gallium nitride categories.
Recent advances in the development of gallium nitride (GaN) high electron mobility transistor (HEMT) have shown promising results in the application of high frequency power conversion techniques. GaN transistors are emerging as a credible alternative to silicon (Si) devices in multiple power conversion applications. This is mainly because the characteristics of GaN offer higher electron mobility, electron velocity, and higher breakdown voltage compared to (Si) devices. In spite of the promising attributes offered by GaN devices, significant technological readiness level challenges remain, in order for the technology to be adopted pervasively into the market. These challenges relate to the reliability of the material both at the device-physics level, and at the circuit-implementation level. This thesis presents detailed studies on some of the circuit-level reliability phenomena affecting GaN technology. These studies will offer a better understanding of the limitations associated with GaN so that the technology's beneficial aspects can be leveraged. The first reliability investigation performed was related to a comparison of two 600 V GaN HEMTs based on the same die, however packaged in two different configurations. In order to characterize the performance of the GaN HEMT, a realistic behavioral simulation model was developed in this thesis. The model takes into consideration both the static and dynamic characteristics of the HEMT including drain current variations with respect to gate voltage and drain voltage, ON resistance, intrinsic capacitances, and reverse recovery current and charge. The model was also integrated with values for the per-terminal parasitic package inductances. These values were obtained through empirical measurement. The modeled transistor was then simulated in a converter to analyze the overall performance of the system. Experimental results verified the results obtained by the model. This study thus presents a framework to project and assess the effect of each parasitic inductance on the performance of next generation GaN devices. In the second reliability study, the effect of gate-stress on the performance of normally-off GaN HEMT devices in a boost converter was investigated. The converter's efficiency, output voltage stability, and gate current were evaluated in order to scrutinize the failure mechanisms of pGaN gated lateral GaN devices under high gate stress. It was observed that the transient overshoot of the gate voltage during turn-on becomes switching frequency-dependent once the device has suffered sufficient degradation, leading to a marked decline in converter performance. This observation has not been reported in the previous literature. This improved understanding may allow mitigation of degradation mechanisms in GaN at the fabrication, packaging, and circuit implementation level. The results of this thesis are beneficial in two ways. First it offers insights into the safe and reliable implementation of GaN devices at the circuits-level, thus obviating the need to trade device performance for device safety. Secondly, the gate-stressing investigation unveils degradation characteristics that are of critical importance to the design and fabrication of next generation GaN devices.
Embedded Mechatronic Systems 2
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Author : Abdelkhalak El Hami
language : en
Publisher: ISTE Press - Elsevier
Release Date : 2020-03-17
Embedded Mechatronic Systems 2 written by Abdelkhalak El Hami and has been published by ISTE Press - Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2020-03-17 with Technology & Engineering categories.
Embedded Mechatronic Systems 2: Analysis of Failures, Modeling, Simulation and Optimization presents advances in research within the field of mechatronic systems, which integrates reliability into the design process. Providing many detailed examples, this book develops a characterization methodology for faults in mechatronic systems. It analyzes the multi-physical modeling of faults, revealing weaknesses in design and failure mechanisms. This development of meta-models enables us to simulate effects on the reliability of conditions of use and manufacture. Provides many detailed examples Develops a characterization methodology for faults in mechatronic systems Analyzes the multi-physical modeling of faults, revealing weaknesses in design and failure mechanisms
Microcircuit Reliability Bibliography
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Author :
language : en
Publisher:
Release Date : 1978
Microcircuit Reliability Bibliography written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1978 with Integrated circuits categories.