Light Scattering In Semiconductor Structures And Superlattices
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Light Scattering In Semiconductor Structures And Superlattices
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Author : D.J. Lockwood
language : en
Publisher: Springer
Release Date : 2013-12-20
Light Scattering In Semiconductor Structures And Superlattices written by D.J. Lockwood and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-12-20 with Science categories.
Just over 25 years ago the first laser-excited Raman spectrum of any crystal was obtained. In November 1964, Hobden and Russell reported the Raman spectrum of GaP and later, in June 1965, Russell published the Si spectrum. Then, in July 1965, the forerunner of a series of meetings on light scattering in solids was held in Paris. Laser Raman spectroscopy of semiconductors was at the forefront in new developments at this meeting. Similar meetings were held in 1968 (New York), 1971 (Paris) and 1975 (Campinas). Since then, and apart from the multidisciplinary biennial International Conference on Raman Spectroscopy there has been no special forum for experts in light scattering spectroscopy of semiconductors to meet and discuss latest developments. Meanwhile, technological advances in semiconductor growth have given rise to a veritable renaissance in the field of semiconductor physics. Light scattering spectroscopy has played a crucial role in the advancement of this field, providing valuable information about the electronic, vibrational and structural properties both of the host materials, and of heterogeneous composite structures. On entering a new decade, one in which technological advances in lithography promise to open even broader horirons for semiconductor physics, it seemed to us to be an ideal time to reflect on the achievements of the past decade, to be brought up to date on the current state-of-the-art, and to catch some glimpses of where the field might be headed in the 1990s.
Physics Of Semiconductors Proceedings Of The 20th International Conference In 3 Volumes
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Author : E M Anastassakis
language : en
Publisher: World Scientific
Release Date : 1990-11-29
Physics Of Semiconductors Proceedings Of The 20th International Conference In 3 Volumes written by E M Anastassakis and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 1990-11-29 with categories.
Gathering top experts in the field, the 20th ICPS proceedings reviews the progress in all aspects of semiconductor physics. The proceedings will include state-of-the-art lectures with special emphasis on exciting new developments. It should serve as excellent material for researchers in this and related fields.
Physics Of Semiconductors The Proceedings Of The 22nd International Conference In 3 Volumes
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Author : David J Lockwood
language : en
Publisher: World Scientific
Release Date : 1995-01-20
Physics Of Semiconductors The Proceedings Of The 22nd International Conference In 3 Volumes written by David J Lockwood and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 1995-01-20 with categories.
These proceedings review the progress in most aspects of semiconductor physics, including those related to materials, processing and devices. The conference continues the tradition of the ICPS series and these volumes include state-of-the-art lectures. The plenary and invited papers address areas of major interest.These volumes will serve as excellent material for researchers in semiconductor physics and related fields.
Confined Electrons And Photons
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Author : Elias Burstein
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Confined Electrons And Photons written by Elias Burstein and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Science categories.
The optical properties of semiconductors have played an important role since the identification of semiconductors as "small" bandgap materials in the thinies, due both to their fundamental interest as a class of solids baving specific optical propenies and to their many important applications. On the former aspect we can cite the fundamental edge absorption and its assignment to direct or indirect transitions, many-body effects as revealed by exciton formation and photoconductivity. On the latter aspect, large-scale applications sucb as LEDs and lasers, photovoltaic converters, photodetectors, electro-optics and non-linear optic devices, come to mind. The eighties saw a revitalization of the whole field due to the advent of heterostructures of lower-dimensionality, mainly two-dimensional quantum wells, which through their enhanced photon-matter interaction yielded new devices with unsurpassed performance. Although many of the basic phenomena were evidenced through the seventies, it was this impact on applications which in turn led to such a massive investment in fabrication tools, thanks to which many new structures and materials were studied, yielding funher advances in fundamental physics.
Phonons In Semiconductor Nanostructures
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Author : J.P. Leburton
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Phonons In Semiconductor Nanostructures written by J.P. Leburton and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Science categories.
In the last ten years, the physics and technology of low dimensional structures has experienced a tremendous development. Quantum structures with vertical and lateral confinements are now routinely fabricated with feature sizes below 100 run. While quantization of the electron states in mesoscopic systems has been the subject of intense investigation, the effect of confinement on lattice vibrations and its influence on the electron-phonon interaction and energy dissipation in nanostructures received atten tion only recently. This NATO Advanced Research Workshop on Phonons in Sem iconductor Nanostructures was a forum for discussion on the latest developments in the physics of phonons and their impact on the electronic properties of low-dimensional structures. Our goal was to bring together specialists in lattice dynamics and nanos tructure physics to assess the increasing importance of phonon effects on the physical properties of one-(lD) and zero-dimensional (OD) structures. The Workshop addressed various issues related to phonon physics in III-V, II-VI and IV semiconductor nanostructures. The following topics were successively covered: Models for confined phonons in semiconductor nanostructures, latest experimental observations of confined phonons and electron-phonon interaction in two-dimensional systems, elementary excitations in nanostructures, phonons and optical processes in reduced dimensionality systems, phonon limited transport phenomena, hot electron effects in quasi - ID structures, carrier relaxation and phonon bottleneck in quantum dots.
Electronic Properties Of Multilayers And Low Dimensional Semiconductor Structures
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Author : J.M. Chamberlain
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Electronic Properties Of Multilayers And Low Dimensional Semiconductor Structures written by J.M. Chamberlain and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Science categories.
This Advanced Study Institute on the Electronic Properties of Multilayers and Low Dimensional Semiconductor Structures focussed on several of the most active areas in modern semiconductor physics. These included resonant tunnelling and superlattice phenomena and the topics of ballistic transport, quantised conductance and anomalous magnetoresistance effects in laterally gated two-dimensional electron systems. Although the main emphasis was on fundamental physics, a series of supporting lectures described the underlying technology (Molecular Beam Epitaxy, Metallo-Organic Chemical Vapour Deposition, Electron Beam Lithography and other advanced processing technologies). Actual and potential applications of low dimensional structures in optoelectronic and high frequency devices were also discussed. The ASI took the form of a series of lectures of about fifty minutes' duration which were given by senior researchers from a wide range of countries. Most of the lectures are recorded in these Proceedings. The younger members of the Institute made the predominant contribution to the discussion sessions following each lecture and, in addition, provided most of the fifty-five papers that were presented in two lively poster sessions. The ASl emphasised the impressive way in which this research field has developed through the fruitful interaction of theory, experiment and semiconductor device technology. Many of the talks demonstrated both the effectiveness and limitations of semiclassical concepts in describing the quantum phenomena exhibited by electrons in low dimensional structures.
Compound Semiconductors Strained Layers And Devices
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Author : Suresh Jain
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-11-27
Compound Semiconductors Strained Layers And Devices written by Suresh Jain and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-11-27 with Technology & Engineering categories.
In recent years, extensive work has been done on strain, dislocations and mechanical properties of strained layers. Although it is not possible to describe all this work in a monograph of this size, Compound Semiconductors Strained Layers and Devices provides an overview with sufficient detail to cover all the essential aspects of recent developments in the field. The book concentrates on compound semiconductors with emphasis on wideband gap II-VI and III-Nitride semiconductors. GeSi strained layers are discussed for comparison to clarify the underlying physics. The effects of strain on band structure, transport, and optical properties of both the zinc blende and the wurtzite compound semiconductors are discussed, as are Piezoelectric Effects and Quantum Confined Stark Effects. Magnetic polarons in diluted II-VI magnetic polarons are also covered. Among the applications, blue and green LEDs and LDs and mid-IR LDs are included. A whole chapter is devoted to these devices. Another chapter examines transistors based on conventional III-V, II-VI and III-nitride semiconductors. The subject matter is treated at a level appropriate for students and senior researchers interested in material science, and in designing and modeling semiconductor devices. It will also be useful to engineers and material scientists concerned with the effects of strain on the mechanical properties of crystalline layers of any material.
Application Of Particle And Laser Beams In Materials Technology
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Author : P. Misaelides
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-03-09
Application Of Particle And Laser Beams In Materials Technology written by P. Misaelides and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-03-09 with Technology & Engineering categories.
The development of advanced materials with preselected properties is one of the main goals of materials research. Of especial interest are electronics, high-temperature and supemard materials for various applications, as well as alloys with improved wear, corrosion and mechanical resistance properties. The technical challenge connected with the production of these materials is not only associated with the development of new specialised preparation techniques but also with quality control. The energetic charged particle, electron and photon beams offer the possibility of modifying the properties of the near-surface regions of materials without seriously affecting their bulk, and provide unique analytical tools for testing their qUality. This volume includes most of the lectures and contributions delivered at the NATO-funded Advanced Study Institute "Application of Particle and Laser Beams in Materials Technology", which was held in Kallithea, Chalkidiki, in Northern Greece, from the 8th to the 21st of May, 1994 and attended by 73 participants from 21 countries. The aim of this ASI was to provide to the participants an overview of this rapidly expanding field. Fundamental aspects concerning the interactions and collisions on atomic, nuclear and solid state scale were presented in a didactic way, along with the application of a variety of techniques for the solution of problems ranging from the development of electronics materials to corrosion research and from archaeometry to environmental protection.
Fundamentals Of Semiconductors
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Author : Peter YU
language : en
Publisher: Springer Science & Business Media
Release Date : 2007-05-08
Fundamentals Of Semiconductors written by Peter YU and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007-05-08 with Technology & Engineering categories.
This third updated edition of Fundamentals of Semiconductors attempts to fill the gap between a general solid-state physics textbook and research articles by providing detailed explanations of the electronic, vibrational, transport, and optical properties of semiconductors. The approach is physical and intuitive rather than formal and pedantic. Theories are presented to explain experimental results. This textbook has been written with both students and researchers in mind. Its emphasis is on understanding the physical properties of Si and similar tetrahedrally coordinated semiconductors. The explanations are based on physical insights. Each chapter is enriched by an extensive collection of tables of material parameters, figures, and problems. Many of these problems "lead the student by the hand" to arrive at the results.
Narrow Gap Semiconductor Photodiodes
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Author : Antoni Rogalski
language : en
Publisher: SPIE Press
Release Date : 2000
Narrow Gap Semiconductor Photodiodes written by Antoni Rogalski and has been published by SPIE Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000 with Science categories.
In this monograph, investigations of the performance of narrow-gap semiconductor photodiodes are presented, and recent progress in different IR photodiode technologies is discussed: HgCdTe photodiodes, InSb photodiodes, alternatives to HgCdTe III-V and II-VI ternary alloy photodiodes, lead chalcogenide photodiodes, and a new class of photodiodes based on two-dimensional solids. Investigations of the performance of photodiodes operated in different spectral regions are presented.