Mask Defect Verification Using Actinic Inspection And Defect Mitigation Technology
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Mask Defect Verification Using Actinic Inspection And Defect Mitigation Technology
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Author :
language : en
Publisher:
Release Date : 2009
Mask Defect Verification Using Actinic Inspection And Defect Mitigation Technology written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009 with categories.
The availability of defect-free masks remains one of the key challenges for inserting extreme ultraviolet lithography (EUVL) into high volume manufacturing. The successful production of defect-free masks will depend on the timely development of defect inspection tools, including both mask blank inspection tools and absorber pattern inspection tools to meet the 22 nm half-pitch node. EUV mask blanks with embedded phase defects were inspected with a reticle actinic inspection tool (AIT) and the Lasertec M7360. The Lasertec M7360 is operated at SEMA TECH's Mask blank Development Center (MBDC) in Albany, with sensitivity to multilayer defects down to 40-45 nm, which is not likely sufficient for mask blank development below the 32 nm half-pitch node. Phase defect printability was simulated to calculate the required defect sensitivity for the next generation blank inspection tool to support reticle development for the sub-32 nm half-pitch technology node. This paper will also discuss the kind of infrastructure that will be required in the development and mass production stages.
Microlithography
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Author : Bruce W. Smith
language : en
Publisher: CRC Press
Release Date : 2020-05-01
Microlithography written by Bruce W. Smith and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2020-05-01 with Technology & Engineering categories.
The completely revised Third Edition to the bestselling Microlithography: Science and Technology provides a balanced treatment of theoretical and operational considerations, from fundamental principles to advanced topics of nanoscale lithography. The book is divided into chapters covering all important aspects related to the imaging, materials, and processes that have been necessary to drive semiconductor lithography toward nanometer-scale generations. Renowned experts from the world’s leading academic and industrial organizations have provided in-depth coverage of the technologies involved in optical, deep-ultraviolet (DUV), immersion, multiple patterning, extreme ultraviolet (EUV), maskless, nanoimprint, and directed self-assembly lithography, together with comprehensive descriptions of the advanced materials and processes involved. New in the Third Edition In addition to the full revision of existing chapters, this new Third Edition features coverage of the technologies that have emerged over the past several years, including multiple patterning lithography, design for manufacturing, design process technology co-optimization, maskless lithography, and directed self-assembly. New advances in lithography modeling are covered as well as fully updated information detailing the new technologies, systems, materials, and processes for optical UV, DUV, immersion, and EUV lithography. The Third Edition of Microlithography: Science and Technology authoritatively covers the science and engineering involved in the latest generations of microlithography and looks ahead to the future systems and technologies that will bring the next generations to fruition. Loaded with illustrations, equations, tables, and time-saving references to the most current technology, this book is the most comprehensive and reliable source for anyone, from student to seasoned professional, looking to better understand the complex world of microlithography science and technology.
Emerging Lithographic Technologies
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Author :
language : en
Publisher:
Release Date : 2007
Emerging Lithographic Technologies written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007 with Lithography categories.
Annual Symposium On Photomask Technology
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Author :
language : en
Publisher:
Release Date : 2002
Annual Symposium On Photomask Technology written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002 with Integrated circuits categories.
Optical Microlithography Xvii
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Author :
language : en
Publisher:
Release Date : 2004
Optical Microlithography Xvii written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004 with Integrated circuits categories.
European Conference On Mask Technology For Integrated Circuits And Microcomponents
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Author :
language : en
Publisher:
Release Date : 2003
European Conference On Mask Technology For Integrated Circuits And Microcomponents written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003 with Integrated circuits categories.
Euv Actinic Defect Inspection And Defect Printability At The Sub 32 Nm Half Pitch
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Author :
language : en
Publisher:
Release Date : 2009
Euv Actinic Defect Inspection And Defect Printability At The Sub 32 Nm Half Pitch written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009 with categories.
Extreme ultraviolet (EUV) mask blanks with embedded phase defects were inspected with a reticle actinic inspection tool (AIT) and the Lasertec M7360. The Lasertec M7360, operated at SEMA TECH's Mask Blank Development Center (MBDC) in Albany, NY, has a sensitivity to multilayer defects down to 40-45 nm, which is not likely sufficient for mask blank development below the 32 nm half-pitch node. Phase defect printability was simulated to calculate the required defect sensitivity for a next generation blank inspection tool to support reticle development for the sub-32 nm half-pitch technology node. Defect mitigation technology is proposed to take advantage of mask blanks with some defects. This technology will reduce the cost of ownership of EUV mask blanks. This paper will also discuss the kind of infrastructure that will be required for the development and mass production stages.
The Engineering Index Annual
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Author :
language : en
Publisher:
Release Date : 1988
The Engineering Index Annual written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1988 with Engineering categories.
Since its creation in 1884, Engineering Index has covered virtually every major engineering innovation from around the world. It serves as the historical record of virtually every major engineering innovation of the 20th century. Recent content is a vital resource for current awareness, new production information, technological forecasting and competitive intelligence. The world?s most comprehensive interdisciplinary engineering database, Engineering Index contains over 10.7 million records. Each year, over 500,000 new abstracts are added from over 5,000 scholarly journals, trade magazines, and conference proceedings. Coverage spans over 175 engineering disciplines from over 80 countries. Updated weekly.
Key Challenges In Euv Mask Technology
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Author : Yow-Gwo Wang
language : en
Publisher:
Release Date : 2005
Key Challenges In Euv Mask Technology written by Yow-Gwo Wang and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005 with categories.
This dissertation focuses on issues related to extreme ultraviolet (EUV) lithography mask technology: mask inspection and mask 3D effects on imaging performance. Actinic (at- wavelength) mask inspection (both blank and patterned mask) is of critical concern for EUV lithography. In this dissertation, systematic studies exploring the optimal optical system design to improve the defect detection sensitivity for both actinic mask blank and patterned mask inspection tools using EUV light are presented. For EUV mask blank in- spection, a complete discussion is conducted to compare the conventional bright field method and the Zernike phase contrast method on their phase defect detection sensitivity by thin mask simulations and experiments using the SHARP EUV microscope at Lawrence Berke- ley National Laboratory (LBNL). The study shows that higher defect detection sensitivity and in-focus inspection capability can be achieved by the Zernike phase contrast method, while the conventional bright field method needs through-focus scanning and results in lower defect detection sensitivity. Experimental results show that a programmed defect as small as 0.35 nm in height is detected at best focus with a signal-to-noise ratio (SNR) ≈ 8 by the Zernike phase contrast method. With the considerations of various noise sources and system design, the thin mask simulation results show that the dark field method has better detection efficiency in inspection mode, while the Zernike phase contrast method is better in review mode (pixel size ≤ 25 nm). Further, the impact of pixel size, EUV source type, and photon collection efficiency for a dark field based actinic blank inspection tool is discussed by thin mask simulation. The simulation results show the complex correlation between each parameter on defect inspection efficiency and also show that 10-watt EUV source power and 100 nm pixel size are needed to capture a phase defect of height 0.5 nm. For EUV patterned mask inspection, the possibility of using the optimum phase shift in the pupil plane to improve inspection efficiency is discussed using a thin mask model. Then the nature of the EUV mask pattern defect is analyzed by its near field distribution using a thick mask model. The simulation results indicate that, as a result of 3D effects leading to phase artifacts, pattern defects cannot be simply treated as ideal absorber defects. The results can affect the choice of optimal patterned mask inspection tool design. Moreover, a study of a bright field based EUV actinic pattern inspection tool design using a hybrid (2D + 3D) model is presented, showing that the impact of noise sources and optical design on critical pattern defects detection sensitivity. The study shows that introducing a − 50 nm defocus into the inspection system can improve the SNR by 50%. The impact of EUV sub-resolution assist feature (SRAF) on mitigation of mask 3D effects is discussed by rigorous 3D modeling. The simulation results show that introducing SRAFs in the mask design induces even stronger effective single pole aberration into the imaging system to balance the Bossung curve. Asymmetric SRAFs pattern placement can achieve a 21% improvement of the process window. Moreover, the complex interaction between the main feature and the SRAFs is analyzed by systematic position sensitivity studies. Bossung tilt sensitivity with respect to the relative positions between main feature and SRAFs is shown, which indicates that different location precision requirements are needed for SRAFs during the mask-making process.
Actinic Mask Inspection At The Als Initial Design Review
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Author :
language : en
Publisher:
Release Date : 2003
Actinic Mask Inspection At The Als Initial Design Review written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003 with categories.
This report is the first milestone report for the actinic mask blank inspection project conducted at the VNL, which forms sub-section 3 of the Q1 2003 mask blank technology transfer program at the VNL. Specifically this report addresses deliverable 3.1.1--design review and preliminary tool design. The goal of this project is to design an actinic mask inspection tool capable of operating in two modes: high-speed scanning for the detection of multilayer defects (inspection mode), and a high-resolution aerial image mode in which the image emulates the imaging illumination conditions of a stepper system (aerial image or AIM mode). The purpose and objective of these two modes is as follows: (1) Defect inspection mode--This imaging mode is designed to scan large areas of the mask for defects EUV multilayer coatings. The goal is to detect the presence of multilayer defects on a mask blank and to store the co-ordinates for subsequent review in AIM mode, thus it is not essential that the illumination and imaging conditions match that of a production stepper. Potential uses for this imaging mode include: (a) Correlating the results obtained using actinic inspection with results obtained using other non-EUV defect inspection systems to verify that the non-EUV scanning systems are detecting all critical defects; (b) Gaining sufficient information to associate defects with particular processes, such as various stages of the multilayer deposition or different modes of operation of the deposition tool; and (c) Assessing the density and EUV impact of surface and multilayer anomalies. Because of the low defect density achieved using current multilayer coating technology it is necessary to be able to efficiently scan large areas of the mask in order to obtain sufficient statistics for use in cross-correlation experiments. Speed of operation as well as sensitivity is therefore key to operation in defect inspection mode. (2) Aerial Image Microscope (AIM) mode--In AIM mode the tool is configured so that the collected data emulates the aerial image of a stepper system, thereby enabling rapid evaluation of mask defects and patterning without the need for a resist exposure step. The main uses of the microscope in this mode would be: (a) Review of multilayer and pattern defects to determine their printability; (b) Defect review following a repair process to assess the success of the operation; (c) Investigation of the effects of illumination and NA on the printed image; (d) Process window analysis of defects and other mask features; and (e) Characterizing defects on both patterned and unpatterned masks (i.e. blanks). An essential characteristic of operation in this mode is that the illumination and imaging conditions through focus should emulate as accurately as possible that of a production stepper system. This mode is designed for local review of defects over a small sub-field of the mask; therefore it is not necessary to have the same high-speed throughput required for defect inspection mode. We first describe some technical background relating to EUV masks and defect scanning, with the aim of defining the context of the tool and experiments to be performed. We then present an overview of several candidate optical system configurations for achieve the above objectives, and analyze the ability of each system to achieve the stated project goals. Of key importance is throughput and sensitivity in inspection mode, whilst in AIM mode key points are spatial resolution and the ability to perform stepper emulation imaging. We then down-select the best candidate from this set of solutions to one system, which is then investigated in further detail with a view to producing a preliminary tool design and estimates of overall system performance.