Materials Reliability In Microelectronics V Volume 391
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Materials Reliability In Microelectronics V Volume 391
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Author : Anthony S. Oates
language : en
Publisher:
Release Date : 1995-10-24
Materials Reliability In Microelectronics V Volume 391 written by Anthony S. Oates and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1995-10-24 with Technology & Engineering categories.
This long-standing proceedings series is highly regarded as a premier forum for the discussion of microelectronics reliability issues. In this fifth book, emphasis is on the fundamental understanding of failure phenomena in thin-film materials. Special attention is given to electromigration and mechanical stress effects. The reliability of thin dielectrics and hot carrier degradation of transistors are also featured. Topics include: modeling and simulation of failure mechanisms; reliability issues for submicron IC technologies and packaging; stresses in thin films/lines; gate oxides; barrier layers; electromigration mechanisms; reliability issues for Cu metallizations; electromigration and microstructure; electromigration and stress voiding in circuit interconnects; and resistance measurements of electromigration damage.
Materials Reliability In Microelectronics Vi Volume 428
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Author : William F. Filter
language : en
Publisher:
Release Date : 1996-11-18
Materials Reliability In Microelectronics Vi Volume 428 written by William F. Filter and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1996-11-18 with Technology & Engineering categories.
MRS books on materials reliability in microelectronics have become the snapshot of progress in this field. Reduced feature size, increased speed, and larger area are all factors contributing to the continual performance and functionality improvements in integrated circuit technology. These same factors place demands on the reliability of the individual components that make up the IC. Achieving increased reliability requires an improved understanding of both thin-film and patterned-feature materials properties and their degradation mechanisms, how materials and processes used to fabricate ICs interact, and how they may be tailored to enable reliability improvements. This book focuses on the physics and materials science of microelectronics reliability problems rather than the traditional statistical, accelerated electrical testing aspects. Studies are grouped into three large sections covering electromigration, gate oxide reliability and mechanical stress behavior. Topics include: historical summary; reliability issues for Cu metallization; characterization of electromigration phenomena; modelling; microstructural evolution and influences; oxide and device reliability; thin oxynitride dielectrics; noncontact diagnostics; stress effects in thin films and interconnects and microbeam X-ray techniques for stress measurements.
Materials Reliability In Microelectronics
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Author :
language : en
Publisher:
Release Date : 1999
Materials Reliability In Microelectronics written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1999 with Microelectronics categories.
Iutam Symposium On Field Analyses For Determination Of Material Parameters Experimental And Numerical Aspects
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Author : P. Ståhle
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Iutam Symposium On Field Analyses For Determination Of Material Parameters Experimental And Numerical Aspects written by P. Ståhle and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.
Proceedings of the IUTAM Symposium held in Abisko National Park, Kiruna, Sweden, July 31-August 4, 2000
Materials Reliability In Microelectronics Vii Volume 473
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Author : J. Joseph Clement
language : en
Publisher:
Release Date : 1997-10-20
Materials Reliability In Microelectronics Vii Volume 473 written by J. Joseph Clement and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997-10-20 with Technology & Engineering categories.
The inexorable drive for increased integrated circuit functionality and performance places growing demands on the metal and dielectric thin films used in fabricating these circuits, as well as spurring demand for new materials applications and processes. This book directly addresses issues of widespread concern in the microelectronics industry - smaller feature sizes, new materials and new applications that challenge the reliability of new technologies. While the book continues the focus on issues related to interconnect reliability, such as electromigration and stress, particular emphasis is placed on the effects of microstructure. An underlying theme is understanding the importance of interactions among different materials and associated interfaces comprising a single structure with dimensions near or below the micrometer scale. Topics include: adhesion and fracture; gate oxide growth and oxide interfaces; surface preparation and gate oxide reliability; oxide degradation and defects; micro-structure, texture and reliability; novel measurement techniques; interconnect performance and reliability modeling; electromigration and interconnect reliability and stress and stress relaxation.
Materials Technology And Reliability For Advanced Interconnects And Low K Dielectrics 2004
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Author : R. J. Carter
language : en
Publisher:
Release Date : 2004-09
Materials Technology And Reliability For Advanced Interconnects And Low K Dielectrics 2004 written by R. J. Carter and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004-09 with Technology & Engineering categories.
The scaling of device dimensions with a simultaneous increase in functional density has imposed tremendous challenges for materials, technology, integration and reliability of interconnects. To meet requirements of the ITRS roadmap, new materials are being introduced at a faster pace in all functions of multilevel interconnects. The issues addressed in this book cannot be dispelled as simply selecting a low-k material and integrating it into a copper damascene process. The intricacies of the back end for sub-100nm technology include novel processing of low-k materials, employing pore-sealing techniques and capping layers, introducing advanced dielectric and diffusion barriers, and developing novel integration schemes. This is in addition to concerns of performance, yield, and reliability appropriate to nanoscaled interconnects. Although many challenges continue to impede progress along the ITRS roadmap, the contributions in this book confront them head-on. It provides a scientific understanding of the issues and stimulate new approaches to advanced multilevel interconnects.
Materials Technology And Reliability For Advanced Interconnects And Low K Dielectrics
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Author :
language : en
Publisher:
Release Date : 2004
Materials Technology And Reliability For Advanced Interconnects And Low K Dielectrics written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004 with Dielectric films categories.
Gallium Nitride And Related Materials Volume 395
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Author : F. A. Ponce
language : en
Publisher:
Release Date : 1996-09-04
Gallium Nitride And Related Materials Volume 395 written by F. A. Ponce and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1996-09-04 with Science categories.
This book reflects the excitement in the scientific community about III-V nitrides. Based on papers presented at the First International Symposium on Gallium Nitride and Related Materials (ISGN-1), it reveals the large amount of work that has taken place since the field exploded with the announcement of commercial blue-light-emitting devices. The compound semiconductors in the III-V nitride systems are of increasing interest for high-performance optoelectronic and electronic device applications. These wide-bandgap semiconductor materials are also of great fundamental scientific interest because of their unique structural, electrical and optical properties. From the advances in the technologies for the heteroepitaxial growth of these materials, leading to improved quality and device performance, it is expected that III-V nitrides will soon be of significant practical and commercial interest. Topics include: crystal growth - substrates and early stages; molecular beam growth techniques; chemical vapor phase and alloys and novel growth techniques; structural properties; electronic properties; optical properties; point defects; hydrogen, etching and other materials processes; surfaces and metal contacts and devices.
Low Dielectric Constant Materials
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Author :
language : en
Publisher:
Release Date : 1998
Low Dielectric Constant Materials written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998 with Electric insulators and insulation categories.
Low Dielectric Constant Materials Synthesis And Applications In Microelectronics
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Author : Toh-Ming Lu
language : en
Publisher:
Release Date : 1995
Low Dielectric Constant Materials Synthesis And Applications In Microelectronics written by Toh-Ming Lu and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1995 with Electric insulators and insulation categories.