Metal Semiconductor Interfaces
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Metal Semiconductor Interfaces
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Author : Akio Hiraki
language : en
Publisher: IOS Press
Release Date : 1995
Metal Semiconductor Interfaces written by Akio Hiraki and has been published by IOS Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1995 with Technology & Engineering categories.
Electronic Properties Of Semiconductor Interfaces
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Author : Winfried Mönch
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-04-17
Electronic Properties Of Semiconductor Interfaces written by Winfried Mönch and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-04-17 with Technology & Engineering categories.
Using the continuum of interface-induced gap states (IFIGS) as a unifying theme, Mönch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling?s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively.
Metallization And Metal Semiconductor Interfaces
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Author : Inder P. Batra
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Metallization And Metal Semiconductor Interfaces written by Inder P. Batra and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Science categories.
This book represents the work presented at a NATO Advanced Research Workshop on "Metallization and Metal-Semiconductor Interfaces", held at the Technical University of Munich, Garching, W. Germany from 22-26 August 1988. The major focus of the workshop was to evaluate critically the progress made in the area of metal-semiconductor interfaces. The underlying theme was the mechanism of Schottky barrier formation and a serious as sessment of the various models. A significant fraction of the workshop time was also spent in discussing the interaction of alkali metals with semiconductors. Alkali metals on semi conductors form ordered overlayers and the resulting system often exhibits one-dimensional metallic properties. The nature of their interaction has introduced new and exciting com plexities and this was pursued at length during the lively discussions at the workshop. A half a day was devoted to Scanning Tunneling Microscopy, the emphasis being on its utility in providing structural and electronic character of low-coverage regime. The book should pro vide readers with the most current status of the research activity in the general area of metal-semiconductor interfaces at an international level. It should also serve as an excellent introduction to the field, since sufficient review type of material has also been included The workshop organizers, Dr. I. P. Batra (Director), mM Almaden Research Center, San Jose, Prof. S. Ciraci, Bilkent University, Ankara, Prof. C. Y. Pong, University of California, Davis, Prof. Dr. F. Koch (Local Chairman), Technical University Munich, Garching, Dr. H.
Metal Semiconductor Contacts And Devices
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Author : Simon S. Cohen
language : en
Publisher: Academic Press
Release Date : 2014-12-01
Metal Semiconductor Contacts And Devices written by Simon S. Cohen and has been published by Academic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-12-01 with Technology & Engineering categories.
VLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in digital integrated circuits. The emphasis is placed on the interplay among the theory, processing, and characterization techniques in the development of practical metal-semiconductor contacts and devices. This volume contains chapters that are devoted to the discussion of the physics of metal-semiconductor interfaces and its basic phenomena; fabrication procedures; and interface characterization techniques, particularly, ohmic contacts. Contacts that involve polycrystalline silicon; applications of the metal-semiconductor barriers in MOS, bipolar, and MESFET digital integrated circuits; and methods for measuring the barrier height are covered as well. Process engineers, device physicists, circuit designers, and students of this discipline will find the book very useful.
Metal Semiconductor Contacts
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Author : E. H. Rhoderick
language : en
Publisher: Oxford University Press, USA
Release Date : 1988
Metal Semiconductor Contacts written by E. H. Rhoderick and has been published by Oxford University Press, USA this book supported file pdf, txt, epub, kindle and other format this book has been release on 1988 with Language Arts & Disciplines categories.
This second edition brings a greatly expanded treatment of the physics of Schottky-barrier formation to its comprehensive discussion of modern semiconductor technology. Topics covered include the current/voltage relationship, the capacitance of rectifying contacts, and practical methods of fabricating contacts. Written for semiconductor technologists and physicists engaged in research on semiconductor interfaces, this text emphasizes practical implications wherever they are relevant to device technology.
Electronic Structure Of Metal Semiconductor Contacts
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Author : Winfried Mönch
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Electronic Structure Of Metal Semiconductor Contacts written by Winfried Mönch and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Science categories.
Interface and surface science have been important in the development of semicon ductor physics right from the beginning on. Modern device concepts are not only based on p-n junctions, which are interfaces between regions containing different types of dopants, but take advantage of the electronic properties of semiconductor insulator interfaces, heterojunctions between distinct semiconductors, and metal semiconductor contacts. The latter ones stood almost at the very beginning of semi conductor physics at the end of the last century. The rectifying properties of metal-semiconductor contacts were first described by Braun in 1874. A physically correct explanation of unilateral conduction, as this deviation from Ohm's law was called, could not be given at that time. A prerequisite was Wilson's quantum theory of electronic semi-conductors which he published in 1931. A few years later, in 1938, Schottky finally explained the rectification at metal-semiconductor contacts by a space-
Rare Earth Metal Semiconductor Interfaces And Compounds
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Author : Jun Nogami
language : en
Publisher:
Release Date : 1986
Rare Earth Metal Semiconductor Interfaces And Compounds written by Jun Nogami and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1986 with Rare earth metal compounds categories.
Metal Semiconductor Contacts
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Author : Michiel Reijer Jan van Buuren
language : en
Publisher:
Release Date : 1997*
Metal Semiconductor Contacts written by Michiel Reijer Jan van Buuren and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997* with categories.
Surface And Interface Effects In Vlsi
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Author : Norman G. Einspruch
language : en
Publisher: Academic Press
Release Date : 2014-12-01
Surface And Interface Effects In Vlsi written by Norman G. Einspruch and has been published by Academic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-12-01 with Technology & Engineering categories.
VLSI Electronics Microstructure Science, Volume 10: Surface and Interface Effects in VLSI provides the advances made in the science of semiconductor surface and interface as they relate to electronics. This volume aims to provide a better understanding and control of surface and interface related properties. The book begins with an introductory chapter on the intimate link between interfaces and devices. The book is then divided into two parts. The first part covers the chemical and geometric structures of prototypical VLSI interfaces. Subjects detailed include, the technologically most important interface, Si-SiO2 and the interplay between interface chemistry and the causes for metal-semiconductor contact behavior, primarily in the III-Vs. The following section deals primarily with the electronic properties of interfaces. Under this section, compound semiconductors, semiconductor-semiconductor interface, constraints that the microscopic interface places on architectures involving metal-semiconductor (MESFET), "Ohmic" contacts, and the behavior of very small, high-speed devices are discussed extensively. The final chapter shows that the Si - SiO2 interface can play a major role in determining carrier transport when MOSFETS are scaled down to ULSI dimensions. Engineers, designers, and scientists will find the book very useful.
Physics And Chemistry Of Iii V Compound Semiconductor Interfaces
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Author : Carl Wilmsen
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-06-29
Physics And Chemistry Of Iii V Compound Semiconductor Interfaces written by Carl Wilmsen and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-06-29 with Science categories.
The application of the 111-V compound semiconductors to device fabrica tion has grown considerably in the last few years. This process has been stimulated, in part, by the advancement in the understanding of the interface physics and chemistry of the III-V's. The literature on this subject is spread over the last 15 years and appears in many journals and conference proceedings. Understanding this literature requires consider able effort by the seasoned researcher, and even more for those starting out in the field or by engineers and scientists who wish to apply this knowledge to the fabrication of devices. The purpose of this book is to bring together much of the fundamental and practical knowledge on the physics and chemistry of the 111-V compounds with metals and dielectrics. The authors of this book have endeavored to provide concise overviews of these areas with many tahles ancI grarhs whic. h c. omr>are and summarize the literature. In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature. The selection of authors was mandated by the desire to include both fundamental and practical approaches, covering device and material aspects of the interfaces. All of the authors are recognized experts on III-V interfaces and each has worked for many years in his subject area. This experience is projected in the breadth of understanding in each chapter.