Multigate Device
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Multigate Device
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Author : Fouad Sabry
language : en
Publisher: One Billion Knowledgeable
Release Date : 2025-03-15
Multigate Device written by Fouad Sabry and has been published by One Billion Knowledgeable this book supported file pdf, txt, epub, kindle and other format this book has been release on 2025-03-15 with Technology & Engineering categories.
"Multigate Device" offers a comprehensive exploration of cuttingedge advancements in nanoelectronics. This essential resource will help professionals, students, and enthusiasts alike gain critical insights into semiconductor technologies that are shaping the future. Whether you are working in industry, studying at an academic level, or simply fascinated by nanoelectronics, this book offers indispensable knowledge to advance your understanding Chapters Brief Overview: Multigate device: An introduction to the principles and structure of multigate devices, exploring their importance in modern semiconductor technologies 3 nm process: A detailed look into the 3 nm process technology, highlighting its role in shrinking device sizes and enhancing performance 7 nm process: Explores the 7 nm process, its technological advancements, and its implications for transistor scaling Charge trap flash: Examines charge trap flash memory technology, discussing its efficiency and relevance in nextgeneration storage solutions Transistor: A thorough breakdown of transistors, their functioning, and their pivotal role in the field of nanoelectronics 22 nm process: Focuses on the 22 nm process, offering insights into its development and impact on transistor design and performance Fieldeffect transistor: Discusses fieldeffect transistors (FETs), their structure, and their significance in modern nanoelectronics 2 nm process: Introduces the 2 nm process, discussing how it pushes the boundaries of semiconductor miniaturization 45 nm process: Covers the 45 nm process, a key milestone in semiconductor development, and its role in enhancing chip performance 90 nm process: Explores the 90 nm process and its contribution to the scalability of semiconductor devices Moore's law: An analysis of Moore’s law, examining its relevance today and the challenges it faces in the context of current technological trends Semiconductor device fabrication: An overview of the methods used in fabricating semiconductor devices, including the challenges and breakthroughs in this area SONOS: A detailed discussion on SONOS (SiliconOxideNitrideOxideSilicon) technology and its applications in nonvolatile memory devices Fujio Masuoka: A tribute to Fujio Masuoka, a pioneer in memory device development, highlighting his contributions to semiconductor technology 5 nm process: Discusses the 5 nm process, its advancements over previous generations, and its impact on device performance and energy efficiency 14 nm process: Examines the 14 nm process, its key features, and how it has enabled further progress in highperformance semiconductor devices International Electron Devices Meeting: Highlights the importance of the International Electron Devices Meeting (IEDM) in advancing semiconductor technology research Fin fieldeffect transistor: A look into FinFET technology, its advantages over traditional planar FETs, and its impact on transistor scaling Silicon on insulator: Discusses the concept of silicononinsulator (SOI) technology and its applications in creating highperformance, energyefficient devices Nanocircuitry: Explores the fundamentals of nanocircuitry, emphasizing its role in the development of faster and smaller electronic devices Integrated circuit: A comprehensive examination of integrated circuits, their evolution, and their fundamental role in shaping modern electronics This book provides a deep dive into nanoelectronics, addressing essential processes and technologies that are driving the future of electronic devices. Whether you're a professional looking to stay at the forefront of industry trends or a student eager to understand the mechanics behind nanoelectronics, "Multigate Device" is an invaluable tool to build your expertise.
High K Materials In Multi Gate Fet Devices
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Author : Shubham Tayal
language : en
Publisher: CRC Press
Release Date : 2021-09-17
High K Materials In Multi Gate Fet Devices written by Shubham Tayal and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021-09-17 with Technology & Engineering categories.
High-k Materials in Multi-Gate FET Devices focuses on high-k materials for advanced FET devices. It discusses emerging challenges in the engineering and applications and considers issues with associated technologies. It covers the various way of utilizing high-k dielectrics in multi-gate FETs for enhancing their performance at the device as well as circuit level. Provides basic knowledge about FET devices Presents the motivation behind multi-gate FETs, including current and future trends in transistor technologies Discusses fabrication and characterization of high-k materials Contains a comprehensive analysis of the impact of high-k dielectrics utilized in the gate-oxide and the gate-sidewall spacers on the GIDL of emerging multi-gate FET architectures Offers detailed application of high-k materials for advanced FET devices Considers future research directions This book is of value to researchers in materials science, electronics engineering, semiconductor device modeling, IT, and related disciplines studying nanodevices such as FinFET and Tunnel FET and device-circuit codesign issues.
Finfet Devices For Vlsi Circuits And Systems
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Author : Samar K. Saha
language : en
Publisher: CRC Press
Release Date : 2020-07-15
Finfet Devices For Vlsi Circuits And Systems written by Samar K. Saha and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2020-07-15 with Technology & Engineering categories.
To surmount the continuous scaling challenges of MOSFET devices, FinFETs have emerged as the real alternative for use as the next generation device for IC fabrication technology. The objective of this book is to provide the basic theory and operating principles of FinFET devices and technology, an overview of FinFET device architecture and manufacturing processes, and detailed formulation of FinFET electrostatic and dynamic device characteristics for IC design and manufacturing. Thus, this book caters to practicing engineers transitioning to FinFET technology and prepares the next generation of device engineers and academic experts on mainstream device technology at the nanometer-nodes.
Finfets And Other Multi Gate Transistors
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Author : J.-P. Colinge
language : en
Publisher: Springer Science & Business Media
Release Date : 2008
Finfets And Other Multi Gate Transistors written by J.-P. Colinge and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008 with Technology & Engineering categories.
This book explains the physics and properties of multi-gate field-effect transistors (MuGFETs), how they are made and how circuit designers can use them to improve the performances of integrated circuits. It covers the emergence of quantum effects due to the reduced size of the devices and describes the evolution of the MOS transistor from classical structures to SOI (silicon-on-insulator) and then to MuGFETs.
Emerging Low Power Semiconductor Devices
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Author : Shubham Tayal
language : en
Publisher: CRC Press
Release Date : 2022-08-31
Emerging Low Power Semiconductor Devices written by Shubham Tayal and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-08-31 with Computers categories.
This book gives insight into the emerging semiconductor devices from their applications in electronic circuits. It discusses the challenges in the field of engineering and applications of advanced low-power devices. Emerging Low-Power Semiconductor Devices: Applications for Future Technology Nodes offers essential exposure to low-power devices, and applications in wireless, biosensing, and circuit domains. This book provides a detailed discussion on all aspects, including the current and future scenarios related to the low-power device. The book also presents basic knowledge about field-effect transistor (FET) devices and introduces emerging and novel FET devices. The chapters include a review of the usage of FET devices in various domains like biosensing, wireless, and cryogenics applications. The chapters also explore device-circuit co-design issues in the digital and analog domains. The content is presented in an easy-to-follow manner that makes it ideal for individuals new to the subject. This book is intended for scientists, researchers, and postgraduate students looking for an understanding of device physics, circuits, and systems.
Stress And Strain Engineering At Nanoscale In Semiconductor Devices
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Author : Chinmay K. Maiti
language : en
Publisher: CRC Press
Release Date : 2021-06-29
Stress And Strain Engineering At Nanoscale In Semiconductor Devices written by Chinmay K. Maiti and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021-06-29 with Science categories.
Anticipating a limit to the continuous miniaturization (More-Moore), intense research efforts are being made to co-integrate various functionalities (More-than-Moore) in a single chip. Currently, strain engineering is the main technique used to enhance the performance of advanced semiconductor devices. Written from an engineering applications standpoint, this book encompasses broad areas of semiconductor devices involving the design, simulation, and analysis of Si, heterostructure silicongermanium (SiGe), and III-N compound semiconductor devices. The book provides the background and physical insight needed to understand the new and future developments in the technology CAD (TCAD) design at the nanoscale. Features Covers stressstrain engineering in semiconductor devices, such as FinFETs and III-V Nitride-based devices Includes comprehensive mobility model for strained substrates in global and local strain techniques and their implementation in device simulations Explains the development of strain/stress relationships and their effects on the band structures of strained substrates Uses design of experiments to find the optimum process conditions Illustrates the use of TCAD for modeling strain-engineered FinFETs for DC and AC performance predictions This book is for graduate students and researchers studying solid-state devices and materials, microelectronics, systems and controls, power electronics, nanomaterials, and electronic materials and devices.
Nanoelectronics
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Author : Fouad Sabry
language : en
Publisher: One Billion Knowledgeable
Release Date : 2025-03-27
Nanoelectronics written by Fouad Sabry and has been published by One Billion Knowledgeable this book supported file pdf, txt, epub, kindle and other format this book has been release on 2025-03-27 with Science categories.
Nanoelectronics-An introduction to the fusion of nanotechnology with electronics, discussing the fundamental principles and the future potential of nanoelectronics in transforming industries Carbon nanotubes in interconnects-Explores how carbon nanotubes are revolutionizing interconnects, offering faster and more efficient alternatives to conventional materials in electronics Multigate device-Examines the advancements in multigate transistors, which enable better control over electron flow, leading to improved performance in integrated circuits Nanocircuitry-Provides insights into the design and functionality of nanocircuits, focusing on their role in reducing size and improving the performance of electronic devices JeanPierre Leburton-Discusses the contributions of JeanPierre Leburton to the field of nanoelectronics and the implications of his work in advancing nanoelectronics research Hybrid solar cell-Investigates the integration of nanotechnology with solar cells, highlighting the potential for hybrid devices to improve energy efficiency and sustainability Nanochemistry-Delves into the intersection of nanotechnology and chemistry, examining how nanomaterials are synthesized and their application in electronics Molecularbeam epitaxy-Covers the techniques of molecularbeam epitaxy for precise growth of nanomaterials, essential in developing highperformance devices Nanowire-Focuses on nanowires and their applications in electronics, particularly in the creation of smaller, more efficient devices Molecular electronics-Analyzes the role of molecules in electronics, emphasizing how molecular electronics is poised to revolutionize the industry with ultraminiaturized devices Molecular nanotechnology-Explores molecularlevel technologies and their potential to fabricate complex systems with unprecedented precision and efficiency Nanoelectromechanical systems-Investigates the integration of mechanical systems with nanoscale electronics, enabling innovative new applications in sensors and actuators Applications of nanotechnology-Highlights the various practical applications of nanotechnology, from healthcare to electronics, showcasing its vast potential Nanoengineering-Focuses on the engineering principles behind nanotechnology, demonstrating how design and material science work together to create novel solutions Carbon nanotube fieldeffect transistor-Explores the development and application of carbon nanotubebased transistors, a groundbreaking technology in semiconductor devices Silicon nanowire-Discusses the use of silicon nanowires in creating smaller and faster devices, paving the way for the next generation of electronics Potential applications of carbon nanotubes-Examines the diverse applications of carbon nanotubes, ranging from electronics to energy storage, and their transformative impact on technology Mark S. Lundstrom-Highlights the contributions of Mark S. Lundstrom to the understanding of nanoelectronics and his influence on the development of new technologies History of nanotechnology-Provides a historical perspective on the evolution of nanotechnology, tracing its development and the key milestones in its progress Nanotechnology-A broad overview of nanotechnology, explaining its core principles and how it is shaping modern electronics and various industries Charles M. Lieber-Discusses the pioneering work of Charles M. Lieber in nanoscience and nanoelectronics, emphasizing his groundbreaking research and innovations
Variation Aware Analog And Mixed Signal Circuit Design In Emerging Multi Gate Cmos Technologies
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Author : Michael Fulde
language : en
Publisher: Springer Science & Business Media
Release Date : 2009-10-27
Variation Aware Analog And Mixed Signal Circuit Design In Emerging Multi Gate Cmos Technologies written by Michael Fulde and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009-10-27 with Technology & Engineering categories.
Since scaling of CMOS is reaching the nanometer area serious limitations enforce the introduction of novel materials, device architectures and device concepts. Multi-gate devices employing high-k gate dielectrics are considered as promising solution overcoming these scaling limitations of conventional planar bulk CMOS. Variation Aware Analog and Mixed-Signal Circuit Design in Emerging Multi-Gate CMOS Technologies provides a technology oriented assessment of analog and mixed-signal circuits in emerging high-k and multi-gate CMOS technologies.
Low Dimensional Nanoelectronic Devices
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Author : Angsuman Sarkar
language : en
Publisher: CRC Press
Release Date : 2022-10-27
Low Dimensional Nanoelectronic Devices written by Angsuman Sarkar and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-10-27 with Science categories.
Providing cutting-edge research on nanoelectronics and photonic devices and its application in future integrated circuits, this state-of-the-art book tackles the challenges of the different detailed theoretical and analytical models of solving the problems of various nanodevices. The volume also explores from different angles the roles of material composition and choice of materials that now play the most critical role in determining outcomes of low-dimensional nanoelectronic devices. The applications of those findings are extremely beneficial for the computing and telecommunication industries. Beginning with a solid theoretical background for every chapter, this volume covers the hottest areas of present-day electronic engineering. The continuous miniaturization of devices, components, and systems requires corresponding cutting-edge theoretical analysis supported by simulated findings before actual fabrication. That purpose is given maximum focus in this volume, which has interdisciplinary appeal, making it a comprehensive technological volume that deals with underlying aspects of physics, materials, structures in nano-regime, and the corresponding end-product in the form of devices.
Handbook For Iii V High Electron Mobility Transistor Technologies
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Author : D. Nirmal
language : en
Publisher: CRC Press
Release Date : 2019-05-14
Handbook For Iii V High Electron Mobility Transistor Technologies written by D. Nirmal and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-05-14 with Science categories.
This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots