Non Contact Defect Detection In Silicon
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Non Contact Defect Detection In Silicon
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Author : Robert Stephen Olyha
language : en
Publisher:
Release Date : 1984
Non Contact Defect Detection In Silicon written by Robert Stephen Olyha and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1984 with categories.
Crack Detection In Silicon Wafers Using Shearography
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Author : Ramak Motamedi
language : en
Publisher:
Release Date : 2008
Crack Detection In Silicon Wafers Using Shearography written by Ramak Motamedi and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008 with categories.
Defects in silicon wafers affect their mechanical stability considerably during their processing and handling. In the new generation of thin silicon wafers, in addition to subsurface defects, cracks are also one of the most important defects that need to be evaluated. A comprehensive review of literature suggests the use of different techniques for non destructive evaluation (NDE) of silicon wafers. Among the few NDE techniques that can be used for both sub-surface and crack detection, Shearography has the advantage of being a whole field technique that can be utilized as a non-contact method for online inspection. Although, recently shearography has been used for sub-surface defect detection in silicon wafers, the capability of this technique to identify and detect cracks has not been investigated yet. In this work, a shearography system has been developed for nondestructive evaluation of silicon wafers. The optical set-up was arranged and several experiments were carried out to optimize its performance. Batch of perfect wafers, wafers with sub-surface defects and cracked wafers of 500?m thickness were qualitatively evaluated using the developed system. Two different loading mechanisms were used to stress the silicon wafer and the advantage of uniform thermal loading over concentrated force loading for crack and sub-surface defect detection has been discussed. In addition to crack detection, the unique potential of the developed system for detection of crack propagation has been discussed.
Defect Detection In Patterned Silicon Wafers Using Anisotropic Kernels
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Author : Maria Zontak
language : en
Publisher:
Release Date : 2008
Defect Detection In Patterned Silicon Wafers Using Anisotropic Kernels written by Maria Zontak and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008 with categories.
Silicon Materials Science And Technology
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Author :
language : en
Publisher:
Release Date : 1998
Silicon Materials Science And Technology written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1998 with Semiconductors categories.
Handbook Of Silicon Based Mems Materials And Technologies
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Author : Markku Tilli
language : en
Publisher: William Andrew
Release Date : 2015-09-02
Handbook Of Silicon Based Mems Materials And Technologies written by Markku Tilli and has been published by William Andrew this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015-09-02 with Technology & Engineering categories.
The Handbook of Silicon Based MEMS Materials and Technologies, Second Edition, is a comprehensive guide to MEMS materials, technologies, and manufacturing that examines the state-of-the-art with a particular emphasis on silicon as the most important starting material used in MEMS. The book explains the fundamentals, properties (mechanical, electrostatic, optical, etc.), materials selection, preparation, manufacturing, processing, system integration, measurement, and materials characterization techniques, sensors, and multi-scale modeling methods of MEMS structures, silicon crystals, and wafers, also covering micromachining technologies in MEMS and encapsulation of MEMS components. Furthermore, it provides vital packaging technologies and process knowledge for silicon direct bonding, anodic bonding, glass frit bonding, and related techniques, shows how to protect devices from the environment, and provides tactics to decrease package size for a dramatic reduction in costs. Provides vital packaging technologies and process knowledge for silicon direct bonding, anodic bonding, glass frit bonding, and related techniques Shows how to protect devices from the environment and decrease package size for a dramatic reduction in packaging costs Discusses properties, preparation, and growth of silicon crystals and wafers Explains the many properties (mechanical, electrostatic, optical, etc.), manufacturing, processing, measuring (including focused beam techniques), and multiscale modeling methods of MEMS structures Geared towards practical applications rather than theory
An Automated Defect Detection System For Silicon Carbide Wafers
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Author : Parag Talekar
language : en
Publisher:
Release Date : 2002
An Automated Defect Detection System For Silicon Carbide Wafers written by Parag Talekar and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002 with categories.
Masters Theses In The Pure And Applied Sciences
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Author : Wade H. Shafer
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Masters Theses In The Pure And Applied Sciences written by Wade H. Shafer and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Science categories.
Masters Theses in the Pure and Applied Sciences was first conceived, published, and disseminated by the Center for Information and Numerical Data Analysis and Synthesis (CINDAS) * at Purdue University in 1 957, starting its coverage of theses with the academic year 1955. Beginning with Volume 13, the printing and dissemination phases of the activity were transferred to University Microfilms/Xerox of Ann Arbor, Michigan, with the thought that such an arrangement would be more beneficial to the academic and general scientific and technical community. After five years of this joint undertaking we had concluded that it was in the interest of all con cerned if the printing and distribution of the volumes were handled by an interna tional publishing house to assure improved service and broader dissemination. Hence, starting with Volume 18, Masters Theses in the Pure and Applied Sciences has been disseminated on a worldwide basis by Plenum Publishing Cor poration of New York, and in the same year the coverage was broadened to include Canadian universities. All back issues can also be ordered from Plenum. We have reported in Volume 29 (thesis year 1984) a total of 12,637 theses titles from 23 Canadian and 202 United States universities. We are sure that this broader base for these titles reported will greatly enhance the value of this important annual reference work. While Volume 29 reports theses submitted in 1984, on occasion, certain univer sities do report theses submitted in previous years but not reported at the time.
Defect Recognition And Image Processing In Semiconductors 1997
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Author : J. Doneker
language : en
Publisher: Routledge
Release Date : 2017-11-22
Defect Recognition And Image Processing In Semiconductors 1997 written by J. Doneker and has been published by Routledge this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-11-22 with Science categories.
Defect Recognition and Image Processing in Semiconductors 1997 provides a valuable overview of current techniques used to assess, monitor, and characterize defects from the atomic scale to inhomogeneities in complete silicon wafers. This volume addresses advances in defect analyzing techniques and instrumentation and their application to substrates, epilayers, and devices. The book discusses the merits and limits of characterization techniques; standardization; correlations between defects and device performance, including degradation and failure analysis; and the adaptation and application of standard characterization techniques to new materials. It also examines the impressive advances made possible by the increase in the number of nanoscale scanning techniques now available. The book investigates defects in layers and devices, and examines the problems that have arisen in characterizing gallium nitride and silicon carbide.
Subsurface Defect Detection In Ceramic Materials Using Low Coherence Optical Scatter Reflectometer
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Author : Mark Bashkansky
language : en
Publisher:
Release Date : 1996
Subsurface Defect Detection In Ceramic Materials Using Low Coherence Optical Scatter Reflectometer written by Mark Bashkansky and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1996 with categories.
We demonstrate the use of optical gating techniques for determining the size and location of subsurface defects in advanced ceramic materials. Various silicon nitride based ceramic materials are probed non-destructively using an optical gated reflectometer based on a low-coherence fiber interferometer. This device is capable of depth and lateral resolutions of 10 micrometers and 4 micrometers, respectively. Experimental results indicate that the size and position of small subsurface defects can be determined as deep as 500 micrometers below the surface.
Quantitative Non Destructive Study Of Sub Micron Defects In Very Large Scale Integrated Circuit Silicon Using Transmitted And Reflected Infra Red Laser Scattering
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Author : Luciano Mule'Stagno
language : en
Publisher:
Release Date : 1996
Quantitative Non Destructive Study Of Sub Micron Defects In Very Large Scale Integrated Circuit Silicon Using Transmitted And Reflected Infra Red Laser Scattering written by Luciano Mule'Stagno and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1996 with Laser beams categories.
"The limits and capabilities of the Scanning Infra-Red Microscope (SIRM) and the Optical Precipitate Profiler (OPP) to detect oxygen precipitate defects in silicon were investigated. Two sets of specimens were made and studied. One set had wafers containing the same bulk defect density, but had different precipitate growth thermal treatments. These treatments resulted in defects of different mean sizes ranging form 30 to 150 nm. The other set had defects of approximately the same size, but they had different defect densities ranging from about 1 x 109 defects/cm3 to 1 x 1011 defects/cm3. The first set was carefully characterized by transmission electron microscopy (TEM) to obtain an accurate size distribution of the defects in each sample. The defect densities were then measured by the OPP, the SIRM, and the cleave-and-etch technique and compared with the TEM measurements. In the second sample the defect density was measured only by the cleave-and-etch technique and then by the SIRM"--Abstract, leaf iii.