Operation And Modeling Of The Mos Transistor Third Edtion International Edition

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Operation And Modeling Of The Mos Transistor Third Edtion International Edition

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Author : Yannis Tsividis
language : en
Publisher: OUP USA
Release Date : 2012-09-13

Operation And Modeling Of The Mos Transistor Third Edtion International Edition written by Yannis Tsividis and has been published by OUP USA this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-09-13 with Technology & Engineering categories.

Operation and Modeling of the MOS Transistor has become a standard in academia and industry. Extensively revised and updated, the third edition of this highly acclaimed text provides a thorough treatment of the MOS transistor--the key element of modern microelectronic chips.

Operation And Modeling Of The Mos Transistor

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Author : Yannis Tsividis
language : en
Publisher: OUP USA
Release Date : 2013-03-14

Operation And Modeling Of The Mos Transistor written by Yannis Tsividis and has been published by OUP USA this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-03-14 with Technology & Engineering categories.

Operation and Modeling of the MOS Transistor has become a standard in academia and industry. Extensively revised and updated, the third edition of this highly acclaimed text provides a thorough treatment of the MOS transistor—the key element of modern microelectronic chips.

Operation And Modeling Of The Mos Transistor

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Author : Yannis Tsividis
language : en
Publisher:
Release Date : 2011

Operation And Modeling Of The Mos Transistor written by Yannis Tsividis and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011 with Metal oxide semiconductor field-effect transistors categories.

The MOS (Metal Oxide Semiconductor) transistor is the most important building block of modern silicon integrated circuits. This book fills an important gap in the literature by presenting a unified treatment of the operation and modeling of the MOS transistor that is complemented withextensive intuitive discussions.The MOS transistor is the dominant VLSI (Very Large Scale Integration) device, and understanding of this device is mandatory for those people planning a career in device physics and modeling as well as in circuit design. Especially important for university courses,there is a logical, systematic and progressive description that starts with semiconductor fundamentals and builds up to a comprehensive understanding of the basics of MOS transistors. For practicing professionals there are details of nuances observed in MOS transistor behavior, and variousapproaches to modeling these are presented. Detailed derivations are given for modeling dc currents, charges for large-signal operation, small-signal operation at low frequencies and high frequencies, and noise.

Operation And Modeling Of The Mos Transistor

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Author : Yannis Tsividis
language : en
Publisher: Oxford University Press, USA
Release Date : 1999

Operation And Modeling Of The Mos Transistor written by Yannis Tsividis and has been published by Oxford University Press, USA this book supported file pdf, txt, epub, kindle and other format this book has been release on 1999 with Computers categories.

Extensively revised and updated, this, the second edition of the highly praised text Operation and Modeling of The MOS Transistor, has become a standard in academia and industry. The book provides a thorough treatment of the MOS transistor-the key element of most modern microelectronic chips. KEY FEATURES .Unified, careful treatment. The book covers in depth the development of many important models, ranging from the simple to the sophisticated, with the connection between models clearly identified. Many aspects of modeling are covered, including: dc, ac, small-signal, large-signal transient, quasi-static, nonquasi-static, and noise. .Expanded coverage. New material is included on a number of topics, including charge sheet models, small-dimension effects, noise, and modeling for RF applications. .New chapter on modeling for CAD. A completely new chapter discusses the context, considerations, and pitfalls associated with the development of models for computer-aided design, and describes ways to evaluate them. .Extensive Bibliography. A thoroughly updated, greatly expanded bibliography is provided."

Operation And Modeling Of The Mos Transistor Solution Manual

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Author : Yannis Tsividis
language : en
Publisher:
Release Date : 2012-08-23

Operation And Modeling Of The Mos Transistor Solution Manual written by Yannis Tsividis and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-08-23 with categories.

Solutions Manual To Accompany Tsividis

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Author : Mehran Bagheri
language : en
Publisher:
Release Date : 1987

Solutions Manual To Accompany Tsividis written by Mehran Bagheri and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1987 with categories.

Instructor S Solution Manaul For Operation And Modeling Of The Mo 3rd Ed

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Author : Charles Batchelor Professor of Electrical Engineering Yannis Tsividis
language : en
Publisher:
Release Date : 2010-12-14

Instructor S Solution Manaul For Operation And Modeling Of The Mo 3rd Ed written by Charles Batchelor Professor of Electrical Engineering Yannis Tsividis and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010-12-14 with Metal oxide semiconductor field-effect transistors categories.

Charge Based Mos Transistor Modeling

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Author : Christian C. Enz
language : en
Publisher: John Wiley & Sons
Release Date : 2006-08-14

Charge Based Mos Transistor Modeling written by Christian C. Enz and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006-08-14 with Technology & Engineering categories.

Modern, large-scale analog integrated circuits (ICs) are essentially composed of metal-oxide semiconductor (MOS) transistors and their interconnections. As technology scales down to deep sub-micron dimensions and supply voltage decreases to reduce power consumption, these complex analog circuits are even more dependent on the exact behavior of each transistor. High-performance analog circuit design requires a very detailed model of the transistor, describing accurately its static and dynamic behaviors, its noise and matching limitations and its temperature variations. The charge-based EKV (Enz-Krummenacher-Vittoz) MOS transistor model for IC design has been developed to provide a clear understanding of the device properties, without the use of complicated equations. All the static, dynamic, noise, non-quasi-static models are completely described in terms of the inversion charge at the source and at the drain taking advantage of the symmetry of the device. Thanks to its hierarchical structure, the model offers several coherent description levels, from basic hand calculation equations to complete computer simulation model. It is also compact, with a minimum number of process-dependant device parameters. Written by its developers, this book provides a comprehensive treatment of the EKV charge-based model of the MOS transistor for the design and simulation of low-power analog and RF ICs. Clearly split into three parts, the authors systematically examine: the basic long-channel intrinsic charge-based model, including all the fundamental aspects of the EKV MOST model such as the basic large-signal static model, the noise model, and a discussion of temperature effects and matching properties; the extended charge-based model, presenting important information for understanding the operation of deep-submicron devices; the high-frequency model, setting out a complete MOS transistor model required for designing RF CMOS integrated circuits. Practising engineers and circuit designers in the semiconductor device and electronics systems industry will find this book a valuable guide to the modelling of MOS transistors for integrated circuits. It is also a useful reference for advanced students in electrical and computer engineering.

Solutions Manual To Accompany Operation And Modeling Of The Mos Transistor

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Author : Yannis Tsividis
language : en
Publisher:
Release Date : 1999

Solutions Manual To Accompany Operation And Modeling Of The Mos Transistor written by Yannis Tsividis and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1999 with categories.

Mosfet Modeling For Circuit Analysis And Design

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Author : Carlos Galup-Montoro
language : en
Publisher: World Scientific
Release Date : 2007

Mosfet Modeling For Circuit Analysis And Design written by Carlos Galup-Montoro and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007 with Technology & Engineering categories.

This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach.Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact expressions for hand analysis or for automatic synthesis, valid in all operating regions, are presented throughout the book. All the main expressions for computer simulation used in the new generation compact models are derived.Since designers in advanced technologies are increasingly concerned with fluctuations, the modeling of fluctuations is strongly emphasized. A unified approach for both space (matching) and time (noise) fluctuations is introduced.