Operation And Modeling Of The Mos Transistor
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Operation And Modeling Of The Mos Transistor
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Author : Yannis Tsividis
language : en
Publisher:
Release Date : 2011
Operation And Modeling Of The Mos Transistor written by Yannis Tsividis and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011 with Metal oxide semiconductor field-effect transistors categories.
The MOS (Metal Oxide Semiconductor) transistor is the most important building block of modern silicon integrated circuits. This book fills an important gap in the literature by presenting a unified treatment of the operation and modeling of the MOS transistor that is complemented withextensive intuitive discussions.The MOS transistor is the dominant VLSI (Very Large Scale Integration) device, and understanding of this device is mandatory for those people planning a career in device physics and modeling as well as in circuit design. Especially important for university courses,there is a logical, systematic and progressive description that starts with semiconductor fundamentals and builds up to a comprehensive understanding of the basics of MOS transistors. For practicing professionals there are details of nuances observed in MOS transistor behavior, and variousapproaches to modeling these are presented. Detailed derivations are given for modeling dc currents, charges for large-signal operation, small-signal operation at low frequencies and high frequencies, and noise.
Operation And Modeling Of The Mos Transistor
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Author : Yannis Tsividis
language : en
Publisher: McGraw-Hill Science, Engineering & Mathematics
Release Date : 1987
Operation And Modeling Of The Mos Transistor written by Yannis Tsividis and has been published by McGraw-Hill Science, Engineering & Mathematics this book supported file pdf, txt, epub, kindle and other format this book has been release on 1987 with Technology & Engineering categories.
Operation And Modeling Of The Mos Transistor Solution Manual
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Author : Yannis Tsividis
language : en
Publisher:
Release Date : 2012-08-23
Operation And Modeling Of The Mos Transistor Solution Manual written by Yannis Tsividis and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-08-23 with categories.
Classical And Object Oriented Software Engineering With Uml And C
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Author : Stephen R. Schach
language : en
Publisher: McGraw-Hill Companies
Release Date : 1999
Classical And Object Oriented Software Engineering With Uml And C written by Stephen R. Schach and has been published by McGraw-Hill Companies this book supported file pdf, txt, epub, kindle and other format this book has been release on 1999 with Computers categories.
The Universal Modeling Language (UML) has become an industry standard in software engineering. In this text, it is used for object-oriented analysis and design as well as when diagrams depict objects and their interrelationships.
Operation And Modeling Of The Mos Transistor
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Author : Yannis Tsividis
language : en
Publisher: OUP USA
Release Date : 2013-03-14
Operation And Modeling Of The Mos Transistor written by Yannis Tsividis and has been published by OUP USA this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-03-14 with Technology & Engineering categories.
Operation and Modeling of the MOS Transistor has become a standard in academia and industry. Extensively revised and updated, the third edition of this highly acclaimed text provides a thorough treatment of the MOS transistor—the key element of modern microelectronic chips.
Operation And Modeling Of The Mos Transistor Third Edtion International Edition
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Author : Yannis Tsividis
language : en
Publisher: OUP USA
Release Date : 2012-09-13
Operation And Modeling Of The Mos Transistor Third Edtion International Edition written by Yannis Tsividis and has been published by OUP USA this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-09-13 with Technology & Engineering categories.
Operation and Modeling of the MOS Transistor has become a standard in academia and industry. Extensively revised and updated, the third edition of this highly acclaimed text provides a thorough treatment of the MOS transistor--the key element of modern microelectronic chips.
Charge Based Mos Transistor Modeling
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Author : Christian C. Enz
language : en
Publisher: John Wiley & Sons
Release Date : 2006-08-14
Charge Based Mos Transistor Modeling written by Christian C. Enz and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006-08-14 with Technology & Engineering categories.
Modern, large-scale analog integrated circuits (ICs) are essentially composed of metal-oxide semiconductor (MOS) transistors and their interconnections. As technology scales down to deep sub-micron dimensions and supply voltage decreases to reduce power consumption, these complex analog circuits are even more dependent on the exact behavior of each transistor. High-performance analog circuit design requires a very detailed model of the transistor, describing accurately its static and dynamic behaviors, its noise and matching limitations and its temperature variations. The charge-based EKV (Enz-Krummenacher-Vittoz) MOS transistor model for IC design has been developed to provide a clear understanding of the device properties, without the use of complicated equations. All the static, dynamic, noise, non-quasi-static models are completely described in terms of the inversion charge at the source and at the drain taking advantage of the symmetry of the device. Thanks to its hierarchical structure, the model offers several coherent description levels, from basic hand calculation equations to complete computer simulation model. It is also compact, with a minimum number of process-dependant device parameters. Written by its developers, this book provides a comprehensive treatment of the EKV charge-based model of the MOS transistor for the design and simulation of low-power analog and RF ICs. Clearly split into three parts, the authors systematically examine: the basic long-channel intrinsic charge-based model, including all the fundamental aspects of the EKV MOST model such as the basic large-signal static model, the noise model, and a discussion of temperature effects and matching properties; the extended charge-based model, presenting important information for understanding the operation of deep-submicron devices; the high-frequency model, setting out a complete MOS transistor model required for designing RF CMOS integrated circuits. Practising engineers and circuit designers in the semiconductor device and electronics systems industry will find this book a valuable guide to the modelling of MOS transistors for integrated circuits. It is also a useful reference for advanced students in electrical and computer engineering.
Instructor S Solution Manaul For Operation And Modeling Of The Mo 3rd Ed
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Author : Charles Batchelor Professor of Electrical Engineering Yannis Tsividis
language : en
Publisher:
Release Date : 2010-12-14
Instructor S Solution Manaul For Operation And Modeling Of The Mo 3rd Ed written by Charles Batchelor Professor of Electrical Engineering Yannis Tsividis and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010-12-14 with Metal oxide semiconductor field-effect transistors categories.
Mosfet Modeling For Vlsi Simulation
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Author : Narain Arora
language : en
Publisher: World Scientific
Release Date : 2007
Mosfet Modeling For Vlsi Simulation written by Narain Arora and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007 with Technology & Engineering categories.
A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations. The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs.
Mosfet Modeling For Circuit Analysis And Design
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Author : Carlos Galup-montoro
language : en
Publisher: World Scientific
Release Date : 2007-02-27
Mosfet Modeling For Circuit Analysis And Design written by Carlos Galup-montoro and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007-02-27 with Technology & Engineering categories.
This is the first book dedicated to the next generation of MOSFET models. Addressed to circuit designers with an in-depth treatment that appeals to device specialists, the book presents a fresh view of compact modeling, having completely abandoned the regional modeling approach.Both an overview of the basic physics theory required to build compact MOSFET models and a unified treatment of inversion-charge and surface-potential models are provided. The needs of digital, analog and RF designers as regards the availability of simple equations for circuit designs are taken into account. Compact expressions for hand analysis or for automatic synthesis, valid in all operating regions, are presented throughout the book. All the main expressions for computer simulation used in the new generation compact models are derived.Since designers in advanced technologies are increasingly concerned with fluctuations, the modeling of fluctuations is strongly emphasized. A unified approach for both space (matching) and time (noise) fluctuations is introduced.