Oxide Reliability A Summary Of Silicon Oxide Wearout Breakdown And Reliability
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Oxide Reliability
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Author : D. J. Dumin
language : en
Publisher: World Scientific
Release Date : 2002
Oxide Reliability written by D. J. Dumin and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002 with Technology & Engineering categories.
Presents in summary the state of our knowledge of oxide reliability.
Oxide Reliability A Summary Of Silicon Oxide Wearout Breakdown And Reliability
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Author : David J Dumin
language : en
Publisher: World Scientific
Release Date : 2002-01-18
Oxide Reliability A Summary Of Silicon Oxide Wearout Breakdown And Reliability written by David J Dumin and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002-01-18 with Technology & Engineering categories.
This book presents in summary the state of our knowledge of oxide reliability. The articles have been written by experts who are among the most knowledgeable in the field. The book will be an invaluable aid to reliability engineers and manufacturing engineers, helping them to produce and characterize reliable oxides. It can be used as an introduction for new engineers interested in oxide reliability, besides being a reference for engineers already engaged in the field.
Dielectric Breakdown In Gigascale Electronics
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Author : Juan Pablo Borja
language : en
Publisher: Springer
Release Date : 2016-09-16
Dielectric Breakdown In Gigascale Electronics written by Juan Pablo Borja and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-09-16 with Technology & Engineering categories.
This book focuses on the experimental and theoretical aspects of the time-dependent breakdown of advanced dielectric films used in gigascale electronics. Coverage includes the most important failure mechanisms for thin low-k films, new and established experimental techniques, recent advances in the area of dielectric failure, and advanced simulations/models to resolve and predict dielectric breakdown, all of which are of considerable importance for engineers and scientists working on developing and integrating present and future chip architectures. The book is specifically designed to aid scientists in assessing the reliability and robustness of electronic systems employing low-k dielectric materials such as nano-porous films. Similarly, the models presented here will help to improve current methodologies for estimating the failure of gigascale electronics at device operating conditions from accelerated lab test conditions. Numerous graphs, tables, and illustrations are included to facilitate understanding of the topics. Readers will be able to understand dielectric breakdown in thin films along with the main failure modes and characterization techniques. In addition, they will gain expertise on conventional as well as new field acceleration test models for predicting long term dielectric degradation.
Lateral Power Transistors In Integrated Circuits
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Author : Tobias Erlbacher
language : en
Publisher: Springer
Release Date : 2014-10-08
Lateral Power Transistors In Integrated Circuits written by Tobias Erlbacher and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-10-08 with Technology & Engineering categories.
The book summarizes and compares recent advancements in the development of novel lateral power transistors (LDMOS devices) for integrated circuits in power electronic applications. In its first part, the book motivates the necessity for lateral power transistors by a top-down approach: First, it presents typical energy conversion applications in modern industrial, automotive and consumer electronics. Next, it introduces common circuit topologies suitable for these applications, and discusses the feasibility for monolithic integration. Finally, the combination of power and logic functionality on a single chip is motivated and the requirements and limitations for the power semiconductor devices are deduced. The second part describes the evolution of lateral power transistors over the past decades from the simple pin-type concept to double-acting RESURF topologies. It describes the principle of operation for these LDMOS devices and discusses limitations of lateral power devices. Moreover, figures-of-merit are presented which can be used to evaluate the performance of the novel lateral power transistors described in this book with respect to the LDMOS devices. In the last part, [..] the fundamental physical concepts including charge compensation and trench gate topologies are discussed. Also, the status of research in LDMOS devices on silicon carbide is presented. Advantages and drawbacks for each of these integration approaches are summarized, and the feasibility with respect to power electronic applications is evaluated.
Fault Tolerant Computer Architecture
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Author : Daniel Sorin
language : en
Publisher: Springer Nature
Release Date : 2022-05-31
Fault Tolerant Computer Architecture written by Daniel Sorin and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-05-31 with Technology & Engineering categories.
For many years, most computer architects have pursued one primary goal: performance. Architects have translated the ever-increasing abundance of ever-faster transistors provided by Moore's law into remarkable increases in performance. Recently, however, the bounty provided by Moore's law has been accompanied by several challenges that have arisen as devices have become smaller, including a decrease in dependability due to physical faults. In this book, we focus on the dependability challenge and the fault tolerance solutions that architects are developing to overcome it. The two main purposes of this book are to explore the key ideas in fault-tolerant computer architecture and to present the current state-of-the-art - over approximately the past 10 years - in academia and industry. Table of Contents: Introduction / Error Detection / Error Recovery / Diagnosis / Self-Repair / The Future
Silicon Nitride And Silicon Dioxide Thin Insulating Films
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Author :
language : en
Publisher:
Release Date : 2001
Silicon Nitride And Silicon Dioxide Thin Insulating Films written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2001 with Silicon dioxide categories.
Silicon Nitride And Silicon Dioxide Thin Insulating Films
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Author : Electrochemical Society. Dielectric Science and Technology Division
language : en
Publisher: The Electrochemical Society
Release Date : 2001
Silicon Nitride And Silicon Dioxide Thin Insulating Films written by Electrochemical Society. Dielectric Science and Technology Division and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 2001 with Science categories.
Breakdown Phenomena In Semiconductors And Semiconductor Devices
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Author : Michael Levinshtein
language : en
Publisher: World Scientific
Release Date : 2005
Breakdown Phenomena In Semiconductors And Semiconductor Devices written by Michael Levinshtein and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005 with Technology & Engineering categories.
Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to provide maximal speed and power, many semiconductor devices must operate under or very close to breakdown conditions. Consequently, an acquaintance with breakdown phenomena is essential for scientists or engineers dealing with semiconductor devices.The aim of this book is to summarize the main experimental results on avalanche and breakdown phenomena in semiconductors and semiconductor devices and to analyze their features from a unified point of view. Attention is focused on the phenomenology of avalanche multiplication and the various kinds of breakdown phenomena and their qualitative analysis.
Radiation Defect Engineering
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Author : Kozlovski Vitali
language : en
Publisher: World Scientific
Release Date : 2005
Radiation Defect Engineering written by Kozlovski Vitali and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005 with Science categories.
The increasing complexity of problems in semiconductor electronics and optoelectronics has exposed the insufficient potential of the technological doping processes currently used. One of the most promising techniques, which this book explores, is radiation doping: the intentional, directional modification of the properties of semiconductors under the action of various types of radiation. The authors consider the basic principles of proton interactions with single crystal semiconductors on the basis of both theory as well as practical results. All types of proton modifications of the materials known presently are analyzed in detail and exciting new fields of research in this direction are discussed.
Sic Materials And Devices
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Author : Michael Shur
language : en
Publisher: World Scientific
Release Date : 2006
Sic Materials And Devices written by Michael Shur and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006 with Technology & Engineering categories.
After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices ? power switching Schottky diodes and high temperature MESFETs ? are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.