Oxide Reliability

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Oxide Reliability A Summary Of Silicon Oxide Wearout Breakdown And Reliability

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Author : David J Dumin
language : en
Publisher: World Scientific
Release Date : 2002-01-18

Oxide Reliability A Summary Of Silicon Oxide Wearout Breakdown And Reliability written by David J Dumin and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002-01-18 with Technology & Engineering categories.

This book presents in summary the state of our knowledge of oxide reliability. The articles have been written by experts who are among the most knowledgeable in the field. The book will be an invaluable aid to reliability engineers and manufacturing engineers, helping them to produce and characterize reliable oxides. It can be used as an introduction for new engineers interested in oxide reliability, besides being a reference for engineers already engaged in the field.

Gate Dielectric Integrity

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Author : Dinesh C. Gupta
language : en
Publisher: ASTM International
Release Date : 2000

Gate Dielectric Integrity written by Dinesh C. Gupta and has been published by ASTM International this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000 with Science categories.

Annotation Contains papers from a January 1999 conference held in San Jose, California, describing concepts and metrology of Gate Dielectric Integrity (GDI) and discussing its applications for material and device processes and tool qualification. Topics include methods, protocols, and reliability assessment as related to dielectric integrity. Papers are organized in sections on concepts, thin gate dielectrics, characterization and applications, and standardization. There is also a section summarizing panel discussions. Gupta is affiliated with Mitsubishi Silicon America. Brown is affiliated with Texas Instruments Inc. Annotation copyrighted by Book News, Inc., Portland, OR.

Defects In Microelectronic Materials And Devices

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Author : Daniel M. Fleetwood
language : en
Publisher: CRC Press
Release Date : 2008-11-19

Defects In Microelectronic Materials And Devices written by Daniel M. Fleetwood and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008-11-19 with Science categories.

Uncover the Defects that Compromise Performance and ReliabilityAs microelectronics features and devices become smaller and more complex, it is critical that engineers and technologists completely understand how components can be damaged during the increasingly complicated fabrication processes required to produce them.A comprehensive survey of defe

Naval Research Reviews

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Author :
language : en
Publisher:
Release Date : 1988

Naval Research Reviews written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1988 with Naval research categories.

Nistir

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Author :
language : en
Publisher:
Release Date : 2001

Nistir written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2001 with categories.

Physics Of Failure Based Handbook Of Microelectronic Systems

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Author : Shahrzad Salemi
language : en
Publisher: RIAC
Release Date : 2008

Physics Of Failure Based Handbook Of Microelectronic Systems written by Shahrzad Salemi and has been published by RIAC this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008 with Science categories.

Solid Oxide Fuel Cell Lifetime And Reliability

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Author : Nigel Brandon
language : en
Publisher: Academic Press
Release Date : 2017-05-25

Solid Oxide Fuel Cell Lifetime And Reliability written by Nigel Brandon and has been published by Academic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-05-25 with Technology & Engineering categories.

Solid Oxide Fuel Cell Lifetime and Reliability: Critical Challenges in Fuel Cells presents in one volume the most recent research that aims at solving key issues for the deployment of SOFC at a commercial scale and for a wider range of applications. To achieve that, authors from different regions and backgrounds address topics such as electrolytes, contaminants, redox cycling, gas-tight seals, and electrode microstructure. Lifetime issues for particular elements of the fuel cells, like cathodes, interconnects, and fuel processors, are covered as well as new materials. They also examine the balance of SOFC plants, correlations between structure and electrochemical performance, methods for analysis of performance and degradation assessment, and computational and statistical approaches to quantify degradation. For its holistic approach, this book can be used both as an introduction to these issues and a reference resource for all involved in research and application of solid oxide fuel cells, especially those developing understanding in industrial applications of the lifetime issues. This includes researchers in academia and industrial R&D, graduate students and professionals in energy engineering, electrochemistry, and materials sciences for energy applications. It might also be of particular interest to analysts who are looking into integrating SOFCs into energy systems.

Carbon Nanotube And Graphene Nanoribbon Interconnects

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Author : Debaprasad Das
language : en
Publisher: CRC Press
Release Date : 2017-12-19

Carbon Nanotube And Graphene Nanoribbon Interconnects written by Debaprasad Das and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-12-19 with Technology & Engineering categories.

An Alternative to Copper-Based Interconnect Technology With an increase in demand for more circuit components on a single chip, there is a growing need for nanoelectronic devices and their interconnects (a physical connecting medium made of thin metal films between several electrical nodes in a semiconducting chip that transmit signals from one point to another without any distortion). Carbon Nanotube and Graphene Nanoribbon Interconnects explores two new important carbon nanomaterials, carbon nanotube (CNT) and graphene nanoribbon (GNR), and compares them with that of copper-based interconnects. These nanomaterials show almost 1,000 times more current-carrying capacity and significantly higher mean free path than copper. Due to their remarkable properties, CNT and GNR could soon replace traditional copper interconnects. Dedicated to proving their benefits, this book covers the basic theory of CNT and GNR, and provides a comprehensive analysis of the CNT- and GNR-based VLSI interconnects at nanometric dimensions. Explore the Potential Applications of CNT and Graphene for VLSI Circuits The book starts off with a brief introduction of carbon nanomaterials, discusses the latest research, and details the modeling and analysis of CNT and GNR interconnects. It also describes the electrical, thermal, and mechanical properties, and structural behavior of these materials. In addition, it chronicles the progression of these fundamental properties, explores possible engineering applications and growth technologies, and considers applications for CNT and GNR apart from their use in VLSI circuits. Comprising eight chapters this text: Covers the basics of carbon nanotube and graphene nanoribbon Discusses the growth and characterization of carbon nanotube and graphene nanoribbon Presents the modeling of CNT and GNR as future VLSI interconnects Examines the applicability of CNT and GNR in terms of several analysis works Addresses the timing and frequency response of the CNT and GNR interconnects Explores the signal integrity analysis for CNT and GNR interconnects Models and analyzes the applicability of CNT and GNR as power interconnects Considers the future scope of CNT and GNR Beneficial to VLSI designers working in this area, Carbon Nanotube and Graphene Nanoribbon Interconnects provides a complete understanding of carbon-based materials and interconnect technology, and equips the reader with sufficient knowledge about the future scope of research and development for this emerging topic.

Wide Energy Bandgap Electronic Devices

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Author : Fan Ren
language : en
Publisher: World Scientific
Release Date : 2003-07-14

Wide Energy Bandgap Electronic Devices written by Fan Ren and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003-07-14 with Technology & Engineering categories.

This book provides a summary of the current state-of-the-art in SiC and GaN and identify future areas of development. The remarkable improvements in material quality and device performance in the last few years show the promise of these technologies for areas that Si cannot operate because of it's smaller bandgap. We feel that this collection of chapters provides an excellent introduction to the field and is an outstanding reference for those performing research on wide bandgap semiconductors.In this book, we bring together numerous experts in the field to review progress in SiC and GaN electronic devices and novel detectors. Professor Morkoc reviews the growth and characterization of nitrides, followed by chapters from Professor Shur, Professor Karmalkar, and Professor Gaska on High Electron Mobility Transistors, Professor Pearton and co-workers on ultra-high breakdown voltage GaN-based rectifiers and the group of Professor Abernathy on emerging MOS devices in the nitride system. Dr Baca from Sandia National Laboratories and Dr Chang from Agilent review the use of mixed group V-nitrides as the base layer in novel Heterojunction Bipolar Transistors. There are 3 chapters on SiC, including Professor Skowronski on growth and characterization, Professor Chow on power Schottky and pin rectifiers and Professor Cooper on power MOSFETs. Professor Dupuis and Professor Campbell give an overview of short wavelength, nitride based detectors. Finally, Jihyun Kim and co-workers describe recent progress in wide bandgap semiconductor spintronics where one can obtain room temperature ferromagnetism and exploit the spin of the electron in addition to its charge.

The Physics And Chemistry Of Sio2 And The Si Sio2 Interface 3 1996

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Author : Hisham Z. Massoud
language : en
Publisher:
Release Date : 1996

The Physics And Chemistry Of Sio2 And The Si Sio2 Interface 3 1996 written by Hisham Z. Massoud and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1996 with Science categories.