Defects In Microelectronic Materials And Devices

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Defects In Microelectronic Materials And Devices
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Author : Daniel M. Fleetwood
language : en
Publisher: CRC Press
Release Date : 2008-11-19
Defects In Microelectronic Materials And Devices written by Daniel M. Fleetwood and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008-11-19 with Science categories.
Uncover the Defects that Compromise Performance and ReliabilityAs microelectronics features and devices become smaller and more complex, it is critical that engineers and technologists completely understand how components can be damaged during the increasingly complicated fabrication processes required to produce them.A comprehensive survey of defe
Reliability And Failure Of Electronic Materials And Devices
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Author : Milton Ohring
language : en
Publisher: Academic Press
Release Date : 2014-10-14
Reliability And Failure Of Electronic Materials And Devices written by Milton Ohring and has been published by Academic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-10-14 with Technology & Engineering categories.
Reliability and Failure of Electronic Materials and Devices is a well-established and well-regarded reference work offering unique, single-source coverage of most major topics related to the performance and failure of materials used in electronic devices and electronics packaging. With a focus on statistically predicting failure and product yields, this book can help the design engineer, manufacturing engineer, and quality control engineer all better understand the common mechanisms that lead to electronics materials failures, including dielectric breakdown, hot-electron effects, and radiation damage. This new edition adds cutting-edge knowledge gained both in research labs and on the manufacturing floor, with new sections on plastics and other new packaging materials, new testing procedures, and new coverage of MEMS devices. Covers all major types of electronics materials degradation and their causes, including dielectric breakdown, hot-electron effects, electrostatic discharge, corrosion, and failure of contacts and solder joints New updated sections on "failure physics," on mass transport-induced failure in copper and low-k dielectrics, and on reliability of lead-free/reduced-lead solder connections New chapter on testing procedures, sample handling and sample selection, and experimental design Coverage of new packaging materials, including plastics and composites
Defects And Impurities In Silicon Materials
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Author : Yutaka Yoshida
language : en
Publisher: Springer
Release Date : 2016-03-30
Defects And Impurities In Silicon Materials written by Yutaka Yoshida and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-03-30 with Technology & Engineering categories.
This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques. The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved.
Microelectronic Materials
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Author : C.R.M. Grovenor
language : en
Publisher: Routledge
Release Date : 2017-10-05
Microelectronic Materials written by C.R.M. Grovenor and has been published by Routledge this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-10-05 with Science categories.
This practical book shows how an understanding of structure, thermodynamics, and electrical properties can explain some of the choices of materials used in microelectronics, and can assist in the design of new materials for specific applications. It emphasizes the importance of the phase chemistry of semiconductor and metal systems for ensuring the long-term stability of new devices. The book discusses single-crystal and polycrystalline silicon, aluminium- and gold-based metallisation schemes, packaging semiconductor devices, failure analysis, and the suitability of various materials for optoelectronic devices and solar cells. It has been designed for senior undergraduates, graduates, and researchers in physics, electronic engineering, and materials science.
Analysis Of Microelectronic Materials And Devices
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Author : Manfred Grasserbauer
language : en
Publisher: John Wiley & Sons
Release Date : 1991
Analysis Of Microelectronic Materials And Devices written by Manfred Grasserbauer and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 1991 with Science categories.
Presents a comprehensive survey of analytical techniques currently used in support of all stages of microelectronic materials and device processing. The diversity of topics covered has been achieved by bringing together an international field of authors contributing specialized chapters.
Micro And Nanoelectronics
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Author : Tomasz Brozek
language : en
Publisher: CRC Press
Release Date : 2017-12-19
Micro And Nanoelectronics written by Tomasz Brozek and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-12-19 with Technology & Engineering categories.
Micro- and Nanoelectronics: Emerging Device Challenges and Solutions presents a comprehensive overview of the current state of the art of micro- and nanoelectronics, covering the field from fundamental science and material properties to novel ways of making nanodevices. Containing contributions from experts in both industry and academia, this cutting-edge text: Discusses emerging silicon devices for CMOS technologies, fully depleted device architectures, characteristics, and scaling Explains the specifics of silicon compound devices (SiGe, SiC) and their unique properties Explores various options for post-CMOS nanoelectronics, such as spintronic devices and nanoionic switches Describes the latest developments in carbon nanotubes, iii-v devices structures, and more Micro- and Nanoelectronics: Emerging Device Challenges and Solutions provides an excellent representation of a complex engineering field, examining emerging materials and device architecture alternatives with the potential to shape the future of nanotechnology.
Fundamentals Of Silicon Carbide Technology
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Author : Tsunenobu Kimoto
language : en
Publisher: John Wiley & Sons
Release Date : 2014-09-23
Fundamentals Of Silicon Carbide Technology written by Tsunenobu Kimoto and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-09-23 with Technology & Engineering categories.
A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
Program Solicitation
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Author :
language : en
Publisher:
Release Date : 1991
Program Solicitation written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1991 with Military research categories.
Modeling Of Algan Gan High Electron Mobility Transistors
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Author : D. Nirmal
language : en
Publisher: Springer Nature
Release Date : 2024-12-23
Modeling Of Algan Gan High Electron Mobility Transistors written by D. Nirmal and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2024-12-23 with Technology & Engineering categories.
This volume focuses on GaN HEMT, the most promising transistor technology for RF power applications such as 5G communications, space and defense. The contents include accurate small signal models required to predict the RF power performance of RF electronic circuits, large signal modeling of GaN HEMTs, accurate and compact physical models to assist the RF circuit designers to optimize GaN HEMT-based power amplifiers and integrated circuits, among others. The book also covers thermal resistance modeling of GaN HEMTs, charge-based compact models, and surface potential-based models to study the impact of gate leakage current on the RF power performance of GaN HEMTs. This book also deals with the analytical modeling of intrinsic charges and surface potential of GaN HEMTs, physical modeling of charge trapping, neural network-based GaN HEMT models, numerical-based GaN HEMT models, modeling of short channel effects in GaN HEMTs, modeling of parasitic capacitances and resistances, modelingof current collapse and kink effects in HGaN HEMTs, etc. This volume will be a useful to those in industry and academia.
Silicon Nitride Silicon Dioxide And Emerging Dielectrics 10
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Author : R. Ekwal Sah
language : en
Publisher: The Electrochemical Society
Release Date : 2009-05
Silicon Nitride Silicon Dioxide And Emerging Dielectrics 10 written by R. Ekwal Sah and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009-05 with Science categories.
The issue of ECS Transactions contains papers presented at the Tenth International Symposium on Silicon Nitride, Silicon Dioxide, and Alternate Emerging Dielectrics held in San Francisco on May 24-29, 2009. The papers address a very wide range of fabrication and characterization techniques, and applications of thin dielectric films in microelectronic and optoelectronic devices. More specific topics addressed by the papers include reliability, interface states, gate oxides, passivation, and dielctric breakdown.