Oxygen In Silicon
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Oxygen In Silicon
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Author :
language : en
Publisher: Academic Press
Release Date : 1994-08-15
Oxygen In Silicon written by and has been published by Academic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1994-08-15 with Technology & Engineering categories.
This volume reviews the latest understanding of the behavior and roles of oxygen in silicon, which will carry the field into the ULSI era from the experimental and theoretical points of view. The fourteen chapters, written by recognized authorities representing industrial and academic institutions, cover thoroughly the oxygen related phenomena from the crystal growth to device fabrication processes, as well as indispensable diagnostic techniques for oxygen. - Comprehensive study of the behavior of oxygen in silicon - Discusses silicon crystals for VLSI and ULSI applications - Thorough coverage from crystal growth to device fabrication - Edited by technical experts in the field - Written by recognized authorities from industrial and academic institutions - Useful to graduate students, scientists in other disciplines, and active participants in the arena of silicon-based microelectronics research - 297 original line drawings
Early Stages Of Oxygen Precipitation In Silicon
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Author : R. Jones
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-11-11
Early Stages Of Oxygen Precipitation In Silicon written by R. Jones and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-11-11 with Science categories.
It was fOlllld as long ago as 1954 that heating oxygen rich silicon to around 450°C produced electrical active defects - the so called thermal donors. The inference was that the donors were created by some defect produced by the aggregation of oxygen. Since then, there has been an enor mous amount of work carried out to elucidate the detailed mechanism by which they, and other defects, are generated. This task has been made all the more relevant as silicon is one of the most important technological ma terials in everyday use and oxygen is its most common impurity. However, even after forty years, the details of the processes by which the donors and other defects are generated are still obscure. The difficulty of the problem is made more apparent when it is realised that there is only one oxygen atom in about ten thousand silicon atoms and so it is difficult to devise experiments to 'see' what happens during the early stages of oxygen precipitation when complexes of two, three or four 0xygen atoms are formed. However, new important new findings have emerged from experiments such as the careful monitoring of the changes in the infra red lattice absorption spectra over long durations, the observation of the growth of new bands which are correlated with electronic infra-red data, and high resolution ENDOR studies. In addition, progress has been made in the improved control of samples containing oxygen, carbon, nitrogen and hydrogen.
Handbook Of Semiconductor Manufacturing Technology
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Author : Yoshio Nishi
language : en
Publisher: CRC Press
Release Date : 2017-12-19
Handbook Of Semiconductor Manufacturing Technology written by Yoshio Nishi and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-12-19 with Technology & Engineering categories.
Retaining the comprehensive and in-depth approach that cemented the bestselling first edition's place as a standard reference in the field, the Handbook of Semiconductor Manufacturing Technology, Second Edition features new and updated material that keeps it at the vanguard of today's most dynamic and rapidly growing field. Iconic experts Robert Doering and Yoshio Nishi have again assembled a team of the world's leading specialists in every area of semiconductor manufacturing to provide the most reliable, authoritative, and industry-leading information available. Stay Current with the Latest Technologies In addition to updates to nearly every existing chapter, this edition features five entirely new contributions on... Silicon-on-insulator (SOI) materials and devices Supercritical CO2 in semiconductor cleaning Low-κ dielectrics Atomic-layer deposition Damascene copper electroplating Effects of terrestrial radiation on integrated circuits (ICs) Reflecting rapid progress in many areas, several chapters were heavily revised and updated, and in some cases, rewritten to reflect rapid advances in such areas as interconnect technologies, gate dielectrics, photomask fabrication, IC packaging, and 300 mm wafer fabrication. While no book can be up-to-the-minute with the advances in the semiconductor field, the Handbook of Semiconductor Manufacturing Technology keeps the most important data, methods, tools, and techniques close at hand.
The Aggregation And Diffusion Of Oxygen In Silicon
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Author : A. S. Oates
language : en
Publisher:
Release Date : 1985
The Aggregation And Diffusion Of Oxygen In Silicon written by A. S. Oates and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1985 with categories.
Treatise On Process Metallurgy
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Author : Roderick Guthrie
language : en
Publisher: Elsevier
Release Date : 2024-01-25
Treatise On Process Metallurgy written by Roderick Guthrie and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2024-01-25 with Technology & Engineering categories.
Treatise on Process Metallurgy: Volume One, Process Fundamentals provides academics with the fundamentals of the manufacturing of metallic materials, from raw materials into finished parts or products. In these fully updated volumes, coverage is expanded into four volumes, including Process Fundamentals, encompassing process fundamentals, structure and properties of matter; thermodynamic aspects of process metallurgy, and rate phenomena in process metallurgy; Processing Phenomena, encompassing interfacial phenomena in high temperature metallurgy, metallurgical process phenomena, and metallurgical process technology; Metallurgical Processes, encompassing mineral processing, aqueous processing, electrochemical material and energy processes, and iron and steel technology, non-ferrous process principles and production technologies, and more. The work distills the combined academic experience from the principal editor and the multidisciplinary four-member editorial board. - Provides the entire breadth of process metallurgy in a single work - Includes in-depth knowledge in all key areas of process metallurgy - Approaches the topic from an interdisciplinary perspective, providing broad range coverage on topics
The Properties Of Nitrogen And Oxygen In Silicon
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Author : J. D. Murphy
language : en
Publisher:
Release Date : 2006
The Properties Of Nitrogen And Oxygen In Silicon written by J. D. Murphy and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006 with Silicon crystals categories.
Chemistry Of Semiconductors
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Author : Sergio Pizzini
language : en
Publisher: Royal Society of Chemistry
Release Date : 2023-11-24
Chemistry Of Semiconductors written by Sergio Pizzini and has been published by Royal Society of Chemistry this book supported file pdf, txt, epub, kindle and other format this book has been release on 2023-11-24 with Technology & Engineering categories.
Silicon, germanium, and compound semiconductors, among which silicon carbide, gallium arsenide and gallium nitride are the most representative examples, play a withstanding role in the world economy, since they were and still are the keys for the advancement of modern microelectronics and optoelectronics, with a wealth of sister technologies relevant for renewable energy solutions and advanced spectroscopy applications. This textbook will cover the synthesis, spectroscopic characterisation and optimisation of semiconductor materials, accounting for the most recent developments in the field of nanomaterials. It will be of great interest for scholars and instructors to have the chance to look at semiconductor science with a basic chemical approach. Homopolar semiconductors (silicon and germanium) are examined first, considering the role of these materials in modern microelectronics and in photovoltaics. Compound semiconductors (for example, carbides, arsenides, tellurides, nitrides) are also discussed in detail, considering that the chemistry of their preparation is even more critical and their role in photonic applications is strategic. Authored by a leading expert in the field, this easily accessible text is appropriate for advanced undergraduates and postgraduates studying materials science and technology.
Determination Of Oxygen Concentration In Silicon And Germanium By Infrared Absorption
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Author : W. Robert Thurber
language : en
Publisher:
Release Date : 1970
Determination Of Oxygen Concentration In Silicon And Germanium By Infrared Absorption written by W. Robert Thurber and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1970 with Gases categories.
Infrared absorption measurements were made at room temperature, 80 K, and 20 K to determine the absorption coefficient of oxygen in silicon and germanium single crystals. A study was done to compare the results of four experimental methods, which involved both absolute and difference procedures.Sources of error were identified, including that due to calculating the absorption coefficient with an approximate equation which neglects multiple internal reflections.Measurements made on the same specimen at several temperatures give additional data on the relation of oxygen concentration to absorption coefficient at low temperatures.(Author).
Simulation Of Semiconductor Processes And Devices 1998
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Author : Kristin De Meyer
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Simulation Of Semiconductor Processes And Devices 1998 written by Kristin De Meyer and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.
This volume contains the proceedings of the 1998 International Conference on Simulation of Semiconductor Processes and Devices and provides an open forum for the presentation of the latest results and trends in modeling and simulation of semiconductor equipment, processes and devices. Topics include: • semiconductor equipment simulation • process modeling and simulation • device modeling and simulation of complex structures • interconnect modeling • integrated systems for process, device, circuit simulation and optimisation • numerical methods and algorithms • compact modeling and parameter extraction • modeling for RF applications • simulation and modeling of new devices (heterojunction based, SET’s, quantum effect devices, laser based ...)
Nanomaterial Volume 4
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Author : Jyotsna Chauhan
language : en
Publisher: Educreation Publishing
Release Date :
Nanomaterial Volume 4 written by Jyotsna Chauhan and has been published by Educreation Publishing this book supported file pdf, txt, epub, kindle and other format this book has been release on with Education categories.
There are four volume of this book series, nanomaterial vol 1,2,3,4. The whole series covers the whole syllabus of MTech nanotechnology(RGPV). The main purpose of these books are to provide the complete syllabus of PG students at one place at very low cost.