Oxygen In Silicon
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Oxygen In Silicon
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Author :
language : en
Publisher: Academic Press
Release Date : 1994-08-15
Oxygen In Silicon written by and has been published by Academic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1994-08-15 with Technology & Engineering categories.
This volume reviews the latest understanding of the behavior and roles of oxygen in silicon, which will carry the field into the ULSI era from the experimental and theoretical points of view. The fourteen chapters, written by recognized authorities representing industrial and academic institutions, cover thoroughly the oxygen related phenomena from the crystal growth to device fabrication processes, as well as indispensable diagnostic techniques for oxygen. Comprehensive study of the behavior of oxygen in silicon Discusses silicon crystals for VLSI and ULSI applications Thorough coverage from crystal growth to device fabrication Edited by technical experts in the field Written by recognized authorities from industrial and academic institutions Useful to graduate students, scientists in other disciplines, and active participants in the arena of silicon-based microelectronics research 297 original line drawings
Early Stages Of Oxygen Precipitation In Silicon
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Author : R. Jones
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-11-11
Early Stages Of Oxygen Precipitation In Silicon written by R. Jones and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-11-11 with Science categories.
It was fOlllld as long ago as 1954 that heating oxygen rich silicon to around 450°C produced electrical active defects - the so called thermal donors. The inference was that the donors were created by some defect produced by the aggregation of oxygen. Since then, there has been an enor mous amount of work carried out to elucidate the detailed mechanism by which they, and other defects, are generated. This task has been made all the more relevant as silicon is one of the most important technological ma terials in everyday use and oxygen is its most common impurity. However, even after forty years, the details of the processes by which the donors and other defects are generated are still obscure. The difficulty of the problem is made more apparent when it is realised that there is only one oxygen atom in about ten thousand silicon atoms and so it is difficult to devise experiments to 'see' what happens during the early stages of oxygen precipitation when complexes of two, three or four 0xygen atoms are formed. However, new important new findings have emerged from experiments such as the careful monitoring of the changes in the infra red lattice absorption spectra over long durations, the observation of the growth of new bands which are correlated with electronic infra-red data, and high resolution ENDOR studies. In addition, progress has been made in the improved control of samples containing oxygen, carbon, nitrogen and hydrogen.
The Aggregation And Diffusion Of Oxygen In Silicon
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Author : A. S. Oates
language : en
Publisher:
Release Date : 1985
The Aggregation And Diffusion Of Oxygen In Silicon written by A. S. Oates and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1985 with categories.
Oxygen 17 And Silicon 29
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Author :
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Oxygen 17 And Silicon 29 written by and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Science categories.
Although it was shown very early [1] that the isotope 29Si is very valuable for NMR research, severe technical difficulties had to be overcome before silicon spectra could be recorded. This was due to the low sensitivity of the isotope resulting from its low gyro magnetic ratio, its low abundance and the rather long relaxation times. The introduction of the Fourier-Transform-Technique (FT-NMR) helped to surmount most of these problems, with the result, that more and more papers concerning silicon NMR appear. Thus, it seems now that most of the salient features of 29Si-NMR are known today. Some resume of the state of the art of 29Si_NMR have been reported [1-4]. Although the theory of 29Si-NMR is not yet understood beyond the basic features, it promises to be of value mainly for two reasons: 1. Silicon is strategically located in the Periodic Table of the elements between the elements carbon, aluminum and phosphorus. For an unified theory of chemical shifts and coupling constants of the heavier elements silicon NMR values will be important. 2. The normal coordination number of silicon is four. If the current view of the chemical shifts of the heavier elements is correct, then the paramagnetic part is dominant for the measured shift data. Two of the parameters used for the calcu lation of the paramagnetic part are bond orders and angles. Bond angles are rare ly determined experimentally with high precision.
Tailor Made Silicon Oxygen Compounds
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Author : Robert Corriu
language : en
Publisher: Springer
Release Date : 1996
Tailor Made Silicon Oxygen Compounds written by Robert Corriu and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 1996 with Mathematics categories.
The title "Tailor-Made Silicon-Oxygen Compounds - From Molecules to Materials" was the topic of a workshop at the Centre of Interdisciplinary Research (ZiF) in Bielefeld, organized by the editors of the monograph. The field of SiO compounds is actually very exciting and rapidly developing. About 25 leading scientists from different areas (molecular chemistry, solid-state chemistry, material science, physical and theoretical chemistry) present newest results and scientific perspectives within the following subdisciplines: Fundamental SiO-systems; siloxenes; silicon monoxide; functionalized siloxanes; silicate assembly; siloxane assembly. Der Titel "Tailor-Made Silicon-Oxygen Compounds - From Molecules to Materials" ist das Thema eines Workshops, der am Zentrum für interdisziplinäre Forschung (ZiF) in Bielefeld stattfand und von den Herausgebern des Buch organisiert wurde. Die Forschung auf dem Gebiet der Silicium-Sauerstoff-Verbindungen ist äußerst aktuell und entwickelt sich rasant. Etwa 25 Wissenschaftler aus verschiedenen Bereichen (Molekülchemie, Festkörperchemie, Materialwissenschaften, Physikalische und Theoretische Chemie) präsentieren neueste Ergebnisse und wissenschaftliche Perspektiven auf den folgenden Teilgebieten: Si-O-Basissysteme, Siloxen, Siliciummonoxid, funktionalisierte Siloxane, komplexe Silikat-Strukturen, komplexe Siloxan-Strukturen
Theoretical Studies Of The Chemistry And Physics Of Oxygen In Silicon
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Author : Lawrence C. Snyder
language : en
Publisher:
Release Date : 1988
Theoretical Studies Of The Chemistry And Physics Of Oxygen In Silicon written by Lawrence C. Snyder and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1988 with categories.
We have developed a cyclic-cluster program to compute the structure and properties of defects in crystalline solids. We have found the semi-empirical electronic structure method MINDO/3 to give the best account of the structure, stability and states near the gap for defects in silicon. We have applied the cyclic cluster program to describe the chemistry and physics of hydrogen and oxygen in a silicon crystal. We have concluded that a di-ylid is a promising candidate for the core of the 450 oxygen thermal donor in silicon. We have discovered that a four-member ring containing two oxygen atoms is likely to diffuse much faster than interstitial oxygen in silicon. We have applied perturbation theory to give a qualitative explanation of the ladder of effective mass states associated with oxygen clusters in silicon and germanium. Keywords: Semiconductor theory, Silicon defects, Oxygen thermal donors. (JES).
Determination Of Oxygen Concentration In Silicon And Germanium By Infrared Absorption
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Author : W. Robert Thurber
language : en
Publisher:
Release Date : 1970
Determination Of Oxygen Concentration In Silicon And Germanium By Infrared Absorption written by W. Robert Thurber and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1970 with Gases categories.
Infrared absorption measurements were made at room temperature, 80 K, and 20 K to determine the absorption coefficient of oxygen in silicon and germanium single crystals. A study was done to compare the results of four experimental methods, which involved both absolute and difference procedures.Sources of error were identified, including that due to calculating the absorption coefficient with an approximate equation which neglects multiple internal reflections.Measurements made on the same specimen at several temperatures give additional data on the relation of oxygen concentration to absorption coefficient at low temperatures.(Author).
Numerical Methods For Determining Interstitial Oxygen In Silicon
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Author :
language : en
Publisher:
Release Date : 1995
Numerical Methods For Determining Interstitial Oxygen In Silicon written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1995 with categories.
The interstitial oxygen (O{sub i}) concentration in Czochralski silicon and the subsequent SiO(subscript x) precipitation are important parameters for integrated circuit fabrication. Uncontrolled SiO(subscript x) precipitation during processing can create detrimental mechanical and electrical effects that contribute to poor performance. An inability to consistently and accurately measure the initial O{sub i} concentration in heavily doped silicon has led to contradictory results regarding the effects of dopant type and concentration on SiO(subscript x) precipitation. The authors have developed a software package for reliably determining and comparing O{sub i} in heavily doped silicon. The SiFTIR{copyright} code implements three independent oxygen analysis methods in a single integrated package. Routine oxygen measurements are desirable over a wide range of silicon resistivities, but there has been confusion concerning which of the three numerical methods is most suitable for the low resistivity portion of the continuum. A major strength of the software is an ability to rapidly produce results for all three methods using only a single Fourier Transform Infrared Spectroscopy (FTIR) spectrum as input. This ability to perform three analyses on a single data set allows a detailed comparison of the three methods across the entire range of resistivities in question. Integrated circuit manufacturers could use the enabling technology provided by SiFTIR{copyright} to monitor O{sub i} content. Early detection of O{sub i} using this diagnostic could be beneficial in controlling SiO(subscript x) precipitation during integrated circuit processing.
Oxygen 17 And Silicon 29
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Author :
language : en
Publisher: Springer
Release Date : 2014-03-12
Oxygen 17 And Silicon 29 written by and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-03-12 with Science categories.
Although it was shown very early [1] that the isotope 29Si is very valuable for NMR research, severe technical difficulties had to be overcome before silicon spectra could be recorded. This was due to the low sensitivity of the isotope resulting from its low gyro magnetic ratio, its low abundance and the rather long relaxation times. The introduction of the Fourier-Transform-Technique (FT-NMR) helped to surmount most of these problems, with the result, that more and more papers concerning silicon NMR appear. Thus, it seems now that most of the salient features of 29Si-NMR are known today. Some resume of the state of the art of 29Si_NMR have been reported [1-4]. Although the theory of 29Si-NMR is not yet understood beyond the basic features, it promises to be of value mainly for two reasons: 1. Silicon is strategically located in the Periodic Table of the elements between the elements carbon, aluminum and phosphorus. For an unified theory of chemical shifts and coupling constants of the heavier elements silicon NMR values will be important. 2. The normal coordination number of silicon is four. If the current view of the chemical shifts of the heavier elements is correct, then the paramagnetic part is dominant for the measured shift data. Two of the parameters used for the calcu lation of the paramagnetic part are bond orders and angles. Bond angles are rare ly determined experimentally with high precision.
The Properties Of Nitrogen And Oxygen In Silicon
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Author : J. D. Murphy
language : en
Publisher:
Release Date : 2006
The Properties Of Nitrogen And Oxygen In Silicon written by J. D. Murphy and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006 with Silicon crystals categories.