Plasma Etching Processes For Cmos Devices Realization
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Plasma Etching Processes For Cmos Devices Realization
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Author : Nicolas Posseme
language : en
Publisher: Elsevier
Release Date : 2017-01-25
Plasma Etching Processes For Cmos Devices Realization written by Nicolas Posseme and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-01-25 with Technology & Engineering categories.
Plasma etching has long enabled the perpetuation of Moore's Law. Today, etch compensation helps to create devices that are smaller than 20 nm. But, with the constant downscaling in device dimensions and the emergence of complex 3D structures (like FinFet, Nanowire and stacked nanowire at longer term) and sub 20 nm devices, plasma etching requirements have become more and more stringent. Now more than ever, plasma etch technology is used to push the limits of semiconductor device fabrication into the nanoelectronics age. This will require improvement in plasma technology (plasma sources, chamber design, etc.), new chemistries (etch gases, flows, interactions with substrates, etc.) as well as a compatibility with new patterning techniques such as multiple patterning, EUV lithography, Direct Self Assembly, ebeam lithography or nanoimprint lithography. This book presents these etch challenges and associated solutions encountered throughout the years for transistor realization. - Helps readers discover the master technology used to pattern complex structures involving various materials - Explores the capabilities of cold plasmas to generate well controlled etched profiles and high etch selectivities between materials - Teaches users how etch compensation helps to create devices that are smaller than 20 nm
Miniaturized Transistors
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Author : Lado Filipovic
language : en
Publisher: MDPI
Release Date : 2019-06-24
Miniaturized Transistors written by Lado Filipovic and has been published by MDPI this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-06-24 with Technology & Engineering categories.
What is the future of CMOS? Sustaining increased transistor densities along the path of Moore's Law has become increasingly challenging with limited power budgets, interconnect bandwidths, and fabrication capabilities. In the last decade alone, transistors have undergone significant design makeovers; from planar transistors of ten years ago, technological advancements have accelerated to today's FinFETs, which hardly resemble their bulky ancestors. FinFETs could potentially take us to the 5-nm node, but what comes after it? From gate-all-around devices to single electron transistors and two-dimensional semiconductors, a torrent of research is being carried out in order to design the next transistor generation, engineer the optimal materials, improve the fabrication technology, and properly model future devices. We invite insight from investigators and scientists in the field to showcase their work in this Special Issue with research papers, short communications, and review articles that focus on trends in micro- and nanotechnology from fundamental research to applications.
Progress In Adhesion And Adhesives Volume 9
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Author : K. L. Mittal
language : en
Publisher: John Wiley & Sons
Release Date : 2025-06-04
Progress In Adhesion And Adhesives Volume 9 written by K. L. Mittal and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2025-06-04 with Technology & Engineering categories.
The present book constitutes Volume 9 in the book series Progress in Adhesion and Adhesives which was conceived as an annual publication and the premier volume made its debut in 2015. These volumes provide state-of-the-knowledge and curated reviews on many and varied topics about adhesion and adhesives. The current book contains 14 chapters that include the use of hydrophobic and icephobic coatings for aircraft icing mitigations; fundamental concepts and the application of hydrophobic coatings; plasma treatment of polymers to enhance their adhesion; atmospheric pressure plasma treatment of artificial leather; sustainable plasma technology as a surface treatment in footwear materials; failure cases in adhesive joints and coatings; initiating systems for curing anaerobic adhesives; use of fungal mycelia as an adhesive in composites; mechanically responsive hydrogels as adhesives for clinical applications; and adhesion of electrode coatings in lithium-ion batteries and supercapacitors.
Plasma Etching Processes For Interconnect Realization In Vlsi
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Author : Nicolas Posseme
language : en
Publisher: Elsevier
Release Date : 2015-04-14
Plasma Etching Processes For Interconnect Realization In Vlsi written by Nicolas Posseme and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015-04-14 with Technology & Engineering categories.
This is the first of two books presenting the challenges and future prospects of plasma etching processes for microelectronics, reviewing the past, present and future issues of etching processes in order to improve the understanding of these issues through innovative solutions.This book focuses on back end of line (BEOL) for high performance device realization and presents an overview of all etch challenges for interconnect realization as well as the current etch solutions proposed in the semiconductor industry. The choice of copper/low-k interconnect architecture is one of the keys for integrated circuit performance, process manufacturability and scalability. Today, implementation of porous low-k material is mandatory in order to minimize signal propagation delay in interconnections. In this context, the traditional plasma process issues (plasma-induced damage, dimension and profile control, selectivity) and new emerging challenges (residue formation, dielectric wiggling) are critical points of research in order to control the reliability and reduce defects in interconnects. These issues and potential solutions are illustrated by the authors through different process architectures available in the semiconductor industry (metallic or organic hard mask strategies). - Presents the difficulties encountered for interconnect realization in very large-scale integrated (VLSI) circuits - Focused on plasma-dielectric surface interaction - Helps you further reduce the dielectric constant for the future technological nodes
Sige And Si Strained Layer Epitaxy For Silicon Heterostructure Devices
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Author : John D. Cressler
language : en
Publisher: CRC Press
Release Date : 2017-12-19
Sige And Si Strained Layer Epitaxy For Silicon Heterostructure Devices written by John D. Cressler and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-12-19 with Technology & Engineering categories.
What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor “black arts” associated with the deposition of pristine films of nanoscale dimensionality onto enormous Si wafers with near infinite precision. We can now grow near-defect free, nanoscale films of Si and SiGe strained-layer epitaxy compatible with conventional high-volume silicon integrated circuit manufacturing. SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices tells the materials side of the story and details the many advances in the Si-SiGe strained-layer epitaxy for device applications. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume defines and details the many advances in the Si/SiGe strained-layer epitaxy for device applications. Mining the talents of an international panel of experts, the book covers modern SiGe epitaxial growth techniques, epi defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si, and Si-C alloys. It includes appendices on topics such as the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.
Advanced Silicon Carbide Devices And Processing
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Author : Stephen Saddow
language : en
Publisher: BoD – Books on Demand
Release Date : 2015-09-17
Advanced Silicon Carbide Devices And Processing written by Stephen Saddow and has been published by BoD – Books on Demand this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015-09-17 with Technology & Engineering categories.
Since the production of the first commercially available blue LED in the late 1980s, silicon carbide technology has grown into a billion-dollar industry world-wide in the area of solid-state lighting and power electronics. With this in mind we organized this book to bring to the attention of those well versed in SiC technology some new developments in the field with a particular emphasis on particularly promising technologies such as SiC-based solar cells and optoelectronics. We have balanced this with the more traditional subjects such as power electronics and some new developments in the improvement of the MOS system for SiC MOSFETS. Given the importance of advanced microsystems and sensors based on SiC, we also included a review on 3C-SiC for both microsystem and electronic applications.
Springer Handbook Of Semiconductor Devices
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Author : Massimo Rudan
language : en
Publisher: Springer Nature
Release Date : 2022-11-10
Springer Handbook Of Semiconductor Devices written by Massimo Rudan and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-11-10 with Technology & Engineering categories.
This Springer Handbook comprehensively covers the topic of semiconductor devices, embracing all aspects from theoretical background to fabrication, modeling, and applications. Nearly 100 leading scientists from industry and academia were selected to write the handbook's chapters, which were conceived for professionals and practitioners, material scientists, physicists and electrical engineers working at universities, industrial R&D, and manufacturers. Starting from the description of the relevant technological aspects and fabrication steps, the handbook proceeds with a section fully devoted to the main conventional semiconductor devices like, e.g., bipolar transistors and MOS capacitors and transistors, used in the production of the standard integrated circuits, and the corresponding physical models. In the subsequent chapters, the scaling issues of the semiconductor-device technology are addressed, followed by the description of novel concept-based semiconductor devices. The last section illustrates the numerical simulation methods ranging from the fabrication processes to the device performances. Each chapter is self-contained, and refers to related topics treated in other chapters when necessary, so that the reader interested in a specific subject can easily identify a personal reading path through the vast contents of the handbook.
Silicon Heterostructure Handbook
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Author : John D. Cressler
language : en
Publisher: CRC Press
Release Date : 2018-10-03
Silicon Heterostructure Handbook written by John D. Cressler and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-10-03 with Technology & Engineering categories.
An extraordinary combination of material science, manufacturing processes, and innovative thinking spurred the development of SiGe heterojunction devices that offer a wide array of functions, unprecedented levels of performance, and low manufacturing costs. While there are many books on specific aspects of Si heterostructures, the Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained-Layer Epitaxy is the first book to bring all aspects together in a single source. Featuring broad, comprehensive, and in-depth discussion, this handbook distills the current state of the field in areas ranging from materials to fabrication, devices, CAD, circuits, and applications. The editor includes "snapshots" of the industrial state-of-the-art for devices and circuits, presenting a novel perspective for comparing the present status with future directions in the field. With each chapter contributed by expert authors from leading industrial and research institutions worldwide, the book is unequalled not only in breadth of scope, but also in depth of coverage, timeliness of results, and authority of references. It also includes a foreword by Dr. Bernard S. Meyerson, a pioneer in SiGe technology. Containing nearly 1000 figures along with valuable appendices, the Silicon Heterostructure Handbook authoritatively surveys materials, fabrication, device physics, transistor optimization, optoelectronics components, measurement, compact modeling, circuit design, and device simulation.
Encyclopedia Of Plasma Technology Two Volume Set
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Author : J. Leon Shohet
language : en
Publisher: CRC Press
Release Date : 2016-12-12
Encyclopedia Of Plasma Technology Two Volume Set written by J. Leon Shohet and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-12-12 with Technology & Engineering categories.
Technical plasmas have a wide range of industrial applications. The Encyclopedia of Plasma Technology covers all aspects of plasma technology from the fundamentals to a range of applications across a large number of industries and disciplines. Topics covered include nanotechnology, solar cell technology, biomedical and clinical applications, electronic materials, sustainability, and clean technologies. The book bridges materials science, industrial chemistry, physics, and engineering, making it a must have for researchers in industry and academia, as well as those working on application-oriented plasma technologies. Also Available Online This Taylor & Francis encyclopedia is also available through online subscription, offering a variety of extra benefits for researchers, students, and librarians, including: Citation tracking and alerts Active reference linking Saved searches and marked lists HTML and PDF format options Contact Taylor and Francis for more information or to inquire about subscription options and print/online combination packages. US: (Tel) 1.888.318.2367; (E-mail) [email protected] International: (Tel) +44 (0) 20 7017 6062; (E-mail) [email protected]
Fundamental Aspects Of Ultrathin Dielectrics On Si Based Devices
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Author : Eric Garfunkel
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Fundamental Aspects Of Ultrathin Dielectrics On Si Based Devices written by Eric Garfunkel and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.
An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology.