Point Defects In Solids Semiconductors And Molecular Crystals
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Point Defects In Solids Semiconductors And Molecular Crystals
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Author : James Homer Crawford
language : en
Publisher:
Release Date : 1972
Point Defects In Solids Semiconductors And Molecular Crystals written by James Homer Crawford and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1972 with Crystals categories.
Point Defects In Solids
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Author : James H. Crawford
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Point Defects In Solids written by James H. Crawford and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Science categories.
Volume 1 of Point Defects in Solids has as its major emphasis defects in ionic solids. Volume 2 now extends this emphasis to semiconductors. The first four chapters treat in some detail the creation, kinetic behavior, inter actions, and physical properties of both simple and composite defects in a variety of semiconducting systems. Also included, as in Vol. 1, are chapters on special topics, namely phonon-defect interactions and defects in organic crystals. Defect behavior in semiconductors has been a subject of considerable interest since the discovery some twenty-five years ago that fast neutron irradiation profoundly affected the electrical characteristics of germanium and silicon. Present-day interest has been stimulated by such semiconductor applications as solar cell power plants for space stations and satellites and semiconductor particle and y-ray detectors, since in both radiation damage can cause serious deterioration. Of even greater practical concern is the need to understand particle damage in order to capitalize upon the develop ing technique of ion implantation as a means of device fabrication. Although the periodic international conferences on radiation effects in semiconductors have served the valuable function of summarizing the extensive work being done in this field, these proceedings are much too detailed and lack the background discussion needed to make them useful to the novice.
Point Defects In Solids
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Author : James H. Crawford
language : en
Publisher:
Release Date : 1972
Point Defects In Solids written by James H. Crawford and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1972 with categories.
Point Defects In Solids
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Author : Lawrence M. Slifkin
language : en
Publisher: Springer
Release Date : 1972
Point Defects In Solids written by Lawrence M. Slifkin and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 1972 with Science categories.
Volume 1 of Point Defects in Solids has as its major emphasis defects in ionic solids. Volume 2 now extends this emphasis to semiconductors. The first four chapters treat in some detail the creation, kinetic behavior, inter actions, and physical properties of both simple and composite defects in a variety of semiconducting systems. Also included, as in Vol. 1, are chapters on special topics, namely phonon-defect interactions and defects in organic crystals. Defect behavior in semiconductors has been a subject of considerable interest since the discovery some twenty-five years ago that fast neutron irradiation profoundly affected the electrical characteristics of germanium and silicon. Present-day interest has been stimulated by such semiconductor applications as solar cell power plants for space stations and satellites and semiconductor particle and y-ray detectors, since in both radiation damage can cause serious deterioration. Of even greater practical concern is the need to understand particle damage in order to capitalize upon the develop ing technique of ion implantation as a means of device fabrication. Although the periodic international conferences on radiation effects in semiconductors have served the valuable function of summarizing the extensive work being done in this field, these proceedings are much too detailed and lack the background discussion needed to make them useful to the novice.
Point Defects In Solids Vol 2
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Author : James Homer Jr Crawford
language : en
Publisher:
Release Date : 1975
Point Defects In Solids Vol 2 written by James Homer Jr Crawford and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1975 with categories.
Semiconductor Devices And Integrated Electronics
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Author : A. G. Milnes
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Semiconductor Devices And Integrated Electronics written by A. G. Milnes and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Social Science categories.
For some time there has been a need for a semiconductor device book that carries diode and transistor theory beyond an introductory level and yet has space to touch on a wider range of semiconductor device principles and applica tions. Such topics are covered in specialized monographs numbering many hun dreds, but the voluminous nature of this literature limits access for students. This book is the outcome of attempts to develop a broad course on devices and integrated electronics for university students at about senior-year level. The edu cational prerequisites are an introductory course in semiconductor junction and transistor concepts, and a course on analog and digital circuits that has intro duced the concepts of rectification, amplification, oscillators, modulation and logic and SWitching circuits. The book should also be of value to professional engineers and physicists because of both, the information included and the de tailed guide to the literature given by the references. The aim has been to bring some measure of order into the subject area examined and to provide a basic structure from which teachers may develop themes that are of most interest to students and themselves. Semiconductor devices and integrated circuits are reviewed and fundamental factors that control power levels, frequency, speed, size and cost are discussed. The text also briefly mentions how devices are used and presents circuits and comments on representative applications. Thus, the book seeks a balance be tween the extremes of device physics and circuit design.
Radiation Defect Engineering
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Author : Abrosimova Vera
language : en
Publisher: World Scientific
Release Date : 2005-11-17
Radiation Defect Engineering written by Abrosimova Vera and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005-11-17 with Science categories.
The increasing complexity of problems in semiconductor electronics and optoelectronics has exposed the insufficient potential of the technological doping processes currently used. One of the most promising techniques, which this book explores, is radiation doping: the intentional, directional modification of the properties of semiconductors under the action of various types of radiation. The authors consider the basic principles of proton interactions with single crystal semiconductors on the basis of both theory as well as practical results. All types of proton modifications of the materials known presently are analyzed in detail and exciting new fields of research in this direction are discussed.
Best Of Soviet Semiconductor Physics And Technology 1989 1990
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Author : Michael S Shur
language : en
Publisher: World Scientific
Release Date : 1995-12-08
Best Of Soviet Semiconductor Physics And Technology 1989 1990 written by Michael S Shur and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 1995-12-08 with Science categories.
Each year a large number of first rate articles on the physics and technology of semiconductor devices, written by Soviet experts in the field, are published. However, due to the lack of exchange and personal contact, most of these, unfortunately, are neglected by many scientists from the United States, Japan as well as Western Europe. Consequently, many important developments in semiconductor physics are missed by the Western world.This book is a serious attempt to bridge the gap between the Soviet and Western scientific communities. Most of all, it is an effort towards facilitating the communication and sharing of knowledge amongst people from different parts of the world. Ultimately, the aim is to contribute towards the building of a better world for all — one where the knowledge of advanced technology and scientific discoveries is used to improve the quality of life and not the pursuit of selfish mutually destructive behavior. For those in the field who wish to partake in this exchange of knowledge and as a gesture of support for their Soviet counterparts, the reading of this book provides the first step.
Quodons In Mica
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Author : Juan F. R. Archilla
language : en
Publisher: Springer
Release Date : 2015-07-31
Quodons In Mica written by Juan F. R. Archilla and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015-07-31 with Technology & Engineering categories.
This book presents the current knowledge about nonlinear localized travelling excitations in crystals. Excitations can be vibrational, electronic, magnetic or of many other types, in many different types of crystals, as silicates, semiconductors and metals. The book is dedicated to the British scientist FM Russell, recently turned 80. He found 50 years ago that a mineral mica muscovite was able to record elementary charged particles and much later that also some kind of localized excitations, he called them quodons, was also recorded. The tracks, therefore, provide a striking experimental evidence of quodons existence. The first chapter by him presents the state of knowledge in this topic. It is followed by about 18 chapters from world leaders in the field, reviewing different aspects, materials and methods including experiments, molecular dynamics and theory and also presenting the latest results. The last part includes a personal narration of FM Russell of the deciphering of the marks in mica. It provides a unique way to present the science in an accessible way and also illustrates the process of discovery in a scientist's mind.
In Situ Microscopy In Materials Research
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Author : Pratibha L. Gai
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-11-27
In Situ Microscopy In Materials Research written by Pratibha L. Gai and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-11-27 with Technology & Engineering categories.
2. High Temperature UHV-STM System 264 3. Hydrogen Desorption Process on Si (111) Surface 264 4. (7x7) - (1 xl) Phase Transition on Si (111) Surface 271 Step Shifting under dc Electric Fields 275 5. 6. Conclusions 280 Acknowledgements and References 281 12. DYNAMIC OBSERVATION OF VORTICES IN SUPERCONDUCTORS USING ELECTRON WAVES 283 by Akira Tonomura 1. Introduction 283 2. Experimental Method 284 2. 1 Interference Microscopy 284 2. 2 Lorentz Microscopy 287 Observation of Superconducting Vortices 288 3. 3. 1 Superconducting Vortices Observed by Interference Microscopy 288 3. 1. 1 Profile Mode 288 3. 1. 2 Transmission Mode 291 3. 2 Superconducting Vortices Observed by Lorentz Microscopy 293 3. 3 Observation of Vortex Interaction with Pinning Centers 294 3. 3. 1 Surface Steps 295 3. 3. 2 Irradiated Point Defects 296 4. Conclusion 298 References 299 13. TEM STUDIES OF SOME STRUCTURALLY FLEXIBLE SOLIDS AND THEIR ASSOCIATED PHASE TRANSFORMATIONS 301 by Ray L. Withers and John G. Thompson 1. Introduction 301 2. Tetrahedrally Comer-Connected Framework Structures 302 3. Tetragonal a-PbO 311 4. Compositionally Flexible Anion-Deficient Fluorites and the "Defect Fluorite" to C-type Sesquioxide Transition 320 5. Summary and Conclusions 327 Acknowledgements and References 327 Author Index 331 Subject Index 333 List of Contributors A. ASEEV Institute of Semiconductor Physics, Russian Academy of Sciences Novosibirsk, 630090, pr. ac. , Lavrentjeva 13, RUSSIA E. BAUER Department of Physics and Astronomy, Arizona State University Tempe, AZ 85287-1504, U. S. A. G. H.