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Radiation Defect Engineering


Radiation Defect Engineering
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Radiation Defect Engineering


Radiation Defect Engineering
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Author : Kozlovski Vitali
language : en
Publisher: World Scientific
Release Date : 2005

Radiation Defect Engineering written by Kozlovski Vitali and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005 with Science categories.


The increasing complexity of problems in semiconductor electronics and optoelectronics has exposed the insufficient potential of the technological doping processes currently used. One of the most promising techniques, which this book explores, is radiation doping: the intentional, directional modification of the properties of semiconductors under the action of various types of radiation. The authors consider the basic principles of proton interactions with single crystal semiconductors on the basis of both theory as well as practical results. All types of proton modifications of the materials known presently are analyzed in detail and exciting new fields of research in this direction are discussed.



Special Issue Radiation Defect Engineering


Special Issue Radiation Defect Engineering
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Author : V. Abrosimova
language : en
Publisher:
Release Date : 2005

Special Issue Radiation Defect Engineering written by V. Abrosimova and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005 with categories.




Semiconductor Radiation Detectors


Semiconductor Radiation Detectors
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Author : Alan Owens
language : en
Publisher: CRC Press
Release Date : 2019-05-31

Semiconductor Radiation Detectors written by Alan Owens and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-05-31 with Science categories.


Choice Recommended Title, July 2020 Bringing together material scattered across many disciplines, Semiconductor Radiation Detectors provides readers with a consolidated source of information on the properties of a wide range of semiconductors; their growth, characterization and the fabrication of radiation sensors with emphasis on the X- and gamma-ray regimes. It explores the promise and limitations of both the traditional and new generation of semiconductors and discusses where the future in semiconductor development and radiation detection may lie. The purpose of this book is two-fold; firstly to serve as a text book for those new to the field of semiconductors and radiation detection and measurement, and secondly as a reference book for established researchers working in related disciplines within physics and engineering. Features: The only comprehensive book covering this topic Fully up-to-date with new developments in the field Provides a wide-ranging source of further reference material



Nanostructured Photocatalyst Via Defect Engineering


Nanostructured Photocatalyst Via Defect Engineering
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Author : Vitaly Gurylev
language : en
Publisher: Springer Nature
Release Date : 2021-10-28

Nanostructured Photocatalyst Via Defect Engineering written by Vitaly Gurylev and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021-10-28 with Technology & Engineering categories.


This book helps readers comprehend the principles and fundamentals of defect engineering toward realization of an efficient photocatalyst. The volume consists of two parts, each of which addresses a particulate type of defects. The first, larger section provides a comprehensive and rigorous treatment of the behaviour and nature of intrinsic defects. The author describes how their controlled introduction and consequent manipulation over concentration, distribution, nature and diffusion is one of the most effective and practical methodologies to modify the properties and characteristics of target photocatalytic materials. The second part of the book explains the formation of extrinsic defects in the form of metallic and non-metallic dopants and gives a detailed description of their characteristics as this approach is also often used to fabricate an efficient photocatalyst. Filling the gap in knowledge on the correlation between introduction of defects in various semiconducting materials and their photocatalytic performance, the book is ideal for graduate students, academics and researchers interested in photocatalysts, defect engineering, clean energy, hydrogen production, nanoscale advanced functional materials, CO2 deactivation, and semiconductor engineering.



Defects In Microelectronic Materials And Devices


Defects In Microelectronic Materials And Devices
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Author : Daniel M. Fleetwood
language : en
Publisher: CRC Press
Release Date : 2008-11-19

Defects In Microelectronic Materials And Devices written by Daniel M. Fleetwood and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008-11-19 with Science categories.


Uncover the Defects that Compromise Performance and ReliabilityAs microelectronics features and devices become smaller and more complex, it is critical that engineers and technologists completely understand how components can be damaged during the increasingly complicated fabrication processes required to produce them.A comprehensive survey of defe



Principles Of Radiation Interaction In Matter And Detection 4th Edition


Principles Of Radiation Interaction In Matter And Detection 4th Edition
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Author : Pier-giorgio Rancoita
language : en
Publisher: World Scientific
Release Date : 2015-12-17

Principles Of Radiation Interaction In Matter And Detection 4th Edition written by Pier-giorgio Rancoita and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015-12-17 with Science categories.


The fourth edition of this book has been widely revised. It includes additional chapters and some sections are complemented with either new ones or an extension of their content.In this latest edition a complete treatment of the physics and properties of semiconductors is presented, covering transport phenomena in semiconductors, scattering mechanisms, radiation effects and displacement damages. Furthermore, this edition presents a comprehensive treatment of the Coulomb scattering on screened nuclear potentials resulting from electrons, protons, light- and heavy-ions — ranging from (very) low up to ultra-relativistic kinetic energies — and allowing one to derive the corresponding NIEL (non-ionizing energy-loss) doses deposited in any material.The contents are organized into two parts: Chapters 1 to 7 cover Particle Interactions and Displacement Damage while the remaining chapters focus on Radiation Environments and Particle Detection.This book can serve as reference for graduate students and final-year undergraduates and also as supplement for courses in particle, astroparticle, space physics and instrumentation. A section of the book is directed toward courses in medical physics. Researchers in experimental particle physics at low, medium, and high energy who are dealing with instrumentation will also find the book useful.



Principles Of Radiation Interaction In Matter And Detection


Principles Of Radiation Interaction In Matter And Detection
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Author : Claude Leroy
language : en
Publisher: World Scientific
Release Date : 2012

Principles Of Radiation Interaction In Matter And Detection written by Claude Leroy and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012 with Medical categories.


This book, like the first and second editions, addresses the fundamental principles of interaction between radiation and matter and the principles of particle detection and detectors in a wide scope of fields, from low to high energy, including space physics and medical environment. It provides abundant information about the processes of electromagnetic and hadronic energy deposition in matter, detecting systems, performance of detectors and their optimization. The third edition includes additional material covering, for instance: mechanisms of energy loss like the inverse Compton scattering, corrections due to the LandauOCoPomeranchukOCoMigdal effect, an extended relativistic treatment of nucleusOConucleus screened Coulomb scattering, and transport of charged particles inside the heliosphere. Furthermore, the displacement damage (NIEL) in semiconductors has been revisited to account for recent experimental data and more comprehensive comparisons with results previously obtained. This book will be of great use to graduate students and final-year undergraduates as a reference and supplement for courses in particle, astroparticle, space physics and instrumentation. A part of the book is directed toward courses in medical physics. The book can also be used by researchers in experimental particle physics at low, medium, and high energy who are dealing with instrumentation."



Defect Control In Semiconductors


Defect Control In Semiconductors
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Author : K. Sumino
language : en
Publisher: Elsevier
Release Date : 2012-12-02

Defect Control In Semiconductors written by K. Sumino and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-02 with Technology & Engineering categories.


Defect control in semiconductors is a key technology for realizing the ultimate possibilities of modern electronics. The basis of such control lies in an integrated knowledge of a variety of defect properties. From this viewpoint, the volume discusses defect-related problems in connection with defect control in semiconducting materials, such as silicon, III-V, II-VI compounds, organic semiconductors, heterostructure, etc.The conference brought together scientists in the field of fundamental research and engineers involved in application related to electronic devices in order to promote future research activity in both fields and establish a fundamental knowledge of defect control. The main emphasis of the 254 papers presented in this volume is on the control of the concentration, distribution, structural and electronic states of any types of defects including impurities as well as control of the electrical, optical and other activities of defects. Due to the extensive length of the contents, only the number of papers presented per session is listed below.



Radiation Effects In Silicon Carbide


Radiation Effects In Silicon Carbide
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Author : A.A. Lebedev
language : en
Publisher: Materials Research Forum LLC
Release Date : 2017

Radiation Effects In Silicon Carbide written by A.A. Lebedev and has been published by Materials Research Forum LLC this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017 with Technology & Engineering categories.


The book reviews the most interesting research concerning the radiation defects formed in 6H-, 4H-, and 3C-SiC under irradiation with electrons, neutrons, and some kinds of ions. The electrical parameters that make SiC a promising material for applications in modern electronics are discussed in detail. Specific features of the crystal structure of SiC are considered. It is shown that, when wide-bandgap semiconductors are studied, it is necessary to take into account the temperature dependence of the carrier removal rate, which is a standard parameter for determining the radiation hardness of semiconductors. The carrier removal rate values obtained by irradiation of various SiC polytypes with n- and p-type conductivity are analyzed in relation to the type and energy of the irradiating particles. The influence exerted by the energy of charged particles on how radiation defects are formed and conductivity is compensated in semiconductors under irradiation is analyzed. Furthermore, the possibility to produce controlled transformation of silicon carbide polytype is considered. The involvement of radiation defects in radiative and nonradiative recombination processes in SiC is analyzed. Data are also presented regarding the degradation of particular SiC electronic devices under the influence of radiation and a conclusion is made regarding the radiation resistance of SiC. Lastly, the radiation hardness of devices based on silicon and silicon carbide are compared.



Proceedings Of The Symposium On Crystalline Defects And Contamination Their Impact And Control In Device Manufacturing Ii


Proceedings Of The Symposium On Crystalline Defects And Contamination Their Impact And Control In Device Manufacturing Ii
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Author : Bernd O. Kolbesen (Chemiker.)
language : en
Publisher:
Release Date : 1997

Proceedings Of The Symposium On Crystalline Defects And Contamination Their Impact And Control In Device Manufacturing Ii written by Bernd O. Kolbesen (Chemiker.) and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997 with Technology & Engineering categories.