Reliability Of High Mobility Sige Channel Mosfets For Future Cmos Applications
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Reliability Of High Mobility Sige Channel Mosfets For Future Cmos Applications
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Author : Jacopo Franco
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-10-19
Reliability Of High Mobility Sige Channel Mosfets For Future Cmos Applications written by Jacopo Franco and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-10-19 with Technology & Engineering categories.
Due to the ever increasing electric fields in scaled CMOS devices, reliability is becoming a showstopper for further scaled technology nodes. Although several groups have already demonstrated functional Si channel devices with aggressively scaled Equivalent Oxide Thickness (EOT) down to 5Å, a 10 year reliable device operation cannot be guaranteed anymore due to severe Negative Bias Temperature Instability. This book focuses on the reliability of the novel (Si)Ge channel quantum well pMOSFET technology. This technology is being considered for possible implementation in next CMOS technology nodes, thanks to its benefit in terms of carrier mobility and device threshold voltage tuning. We observe that it also opens a degree of freedom for device reliability optimization. By properly tuning the device gate stack, sufficiently reliable ultra-thin EOT devices with a 10 years lifetime at operating conditions are demonstrated. The extensive experimental datasets collected on a variety of processed 300mm wafers and presented here show the reliability improvement to be process - and architecture-independent and, as such, readily transferable to advanced device architectures as Tri-Gate (finFET) devices. We propose a physical model to understand the intrinsically superior reliability of the MOS system consisting of a Ge-based channel and a SiO2/HfO2 dielectric stack. The improved reliability properties here discussed strongly support (Si)Ge technology as a clear frontrunner for future CMOS technology nodes.
Istfa 2018 Proceedings From The 44th International Symposium For Testing And Failure Analysis
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Author : ASM International
language : en
Publisher: ASM International
Release Date : 2018-12-01
Istfa 2018 Proceedings From The 44th International Symposium For Testing And Failure Analysis written by ASM International and has been published by ASM International this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-12-01 with Technology & Engineering categories.
The International Symposium for Testing and Failure Analysis (ISTFA) 2018 is co-located with the International Test Conference (ITC) 2018, October 28 to November 1, in Phoenix, Arizona, USA at the Phoenix Convention Center. The theme for the November 2018 conference is "Failures Worth Analyzing." While technology advances fast and the market demands the latest and the greatest, successful companies strive to stay competitive and remain profitable.
High Mobility Materials For Cmos Applications
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Author : Nadine Collaert
language : en
Publisher: Woodhead Publishing
Release Date : 2018-06-29
High Mobility Materials For Cmos Applications written by Nadine Collaert and has been published by Woodhead Publishing this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-06-29 with Technology & Engineering categories.
High Mobility Materials for CMOS Applications provides a comprehensive overview of recent developments in the field of (Si)Ge and III-V materials and their integration on Si. The book covers material growth and integration on Si, going all the way from device to circuit design. While the book's focus is on digital applications, a number of chapters also address the use of III-V for RF and analog applications, and in optoelectronics. With CMOS technology moving to the 10nm node and beyond, however, severe concerns with power dissipation and performance are arising, hence the need for this timely work on the advantages and challenges of the technology. - Addresses each of the challenges of utilizing high mobility materials for CMOS applications, presenting possible solutions and the latest innovations - Covers the latest advances in research on heterogeneous integration, gate stack, device design and scalability - Provides a broad overview of the topic, from materials integration to circuits
Future Trends In Microelectronics
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Author : Serge Luryi
language : en
Publisher: John Wiley & Sons
Release Date : 2016-09-12
Future Trends In Microelectronics written by Serge Luryi and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-09-12 with Technology & Engineering categories.
Presents the developments in microelectronic-related fields, with comprehensive insight from a number of leading industry professionals The book presents the future developments and innovations in the developing field of microelectronics. The book’s chapters contain contributions from various authors, all of whom are leading industry professionals affiliated either with top universities, major semiconductor companies, or government laboratories, discussing the evolution of their profession. A wide range of microelectronic-related fields are examined, including solid-state electronics, material science, optoelectronics, bioelectronics, and renewable energies. The topics covered range from fundamental physical principles, materials and device technologies, and major new market opportunities. Describes the expansion of the field into hot topics such as energy (photovoltaics) and medicine (bio-nanotechnology) Provides contributions from leading industry professionals in semiconductor micro- and nano-electronics Discusses the importance of micro- and nano-electronics in today’s rapidly changing and expanding information society Future Trends in Microelectronics: Journey into the Unknown is written for industry professionals and graduate students in engineering, physics, and nanotechnology.
Stress And Strain Engineering At Nanoscale In Semiconductor Devices
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Author : Chinmay K. Maiti
language : en
Publisher: CRC Press
Release Date : 2021-06-29
Stress And Strain Engineering At Nanoscale In Semiconductor Devices written by Chinmay K. Maiti and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021-06-29 with Science categories.
Anticipating a limit to the continuous miniaturization (More-Moore), intense research efforts are being made to co-integrate various functionalities (More-than-Moore) in a single chip. Currently, strain engineering is the main technique used to enhance the performance of advanced semiconductor devices. Written from an engineering applications standpoint, this book encompasses broad areas of semiconductor devices involving the design, simulation, and analysis of Si, heterostructure silicongermanium (SiGe), and III-N compound semiconductor devices. The book provides the background and physical insight needed to understand the new and future developments in the technology CAD (TCAD) design at the nanoscale. Features Covers stressstrain engineering in semiconductor devices, such as FinFETs and III-V Nitride-based devices Includes comprehensive mobility model for strained substrates in global and local strain techniques and their implementation in device simulations Explains the development of strain/stress relationships and their effects on the band structures of strained substrates Uses design of experiments to find the optimum process conditions Illustrates the use of TCAD for modeling strain-engineered FinFETs for DC and AC performance predictions This book is for graduate students and researchers studying solid-state devices and materials, microelectronics, systems and controls, power electronics, nanomaterials, and electronic materials and devices.
Fundamentals Of Iii V Semiconductor Mosfets
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Author : Serge Oktyabrsky
language : en
Publisher: Springer Science & Business Media
Release Date : 2010-03-16
Fundamentals Of Iii V Semiconductor Mosfets written by Serge Oktyabrsky and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010-03-16 with Technology & Engineering categories.
Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.
Chemical Abstracts
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Author :
language : en
Publisher:
Release Date : 2002
Chemical Abstracts written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002 with Chemistry categories.
Selected Semiconductor Research
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Author : Ming-Fu Li
language : en
Publisher: World Scientific
Release Date : 2011
Selected Semiconductor Research written by Ming-Fu Li and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011 with Technology & Engineering categories.
This book on solid state physics has been written with an emphasis on recent developments in quantum many-body physics approaches. It starts by covering the classical theory of solids and electrons and describes how this classical model has failed. The authors then present the quantum mechanical model of electrons in a lattice and they also discuss the theory of conductivity. Extensive reviews on the topic are provided in a compact manner so that any non-specialist can follow from the beginning.The authors cover the system of magnetism in a similar way and various problems in magnetic materials are discussed. The book also discusses the Ising chain, the Heisenberg model, the Kondo effect and superconductivity, amongst other relevant topics.In the final chapter, the authors present some works related to contemporary research topics, such as quantum entanglement in many-body systems and quantum simulations. They also include a short review of some of the possible applications of solid state quantum information in biological systems.
Germanium Based Technologies
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Author : Cor Claeys
language : en
Publisher: Elsevier
Release Date : 2011-07-28
Germanium Based Technologies written by Cor Claeys and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011-07-28 with Science categories.
Germanium is a semiconductor material that formed the basis for the development of transistor technology. Although the breakthrough of planar technology and integrated circuits put silicon in the foreground, in recent years there has been a renewed interest in germanium, which has been triggered by its strong potential for deep submicron (sub 45 nm) technologies. Germanium-Based technologies: From Materials to Devices is the first book to provide a broad, in-depth coverage of the field, including recent advances in Ge-technology and the fundamentals in material science, device physics and semiconductor processing. The contributing authors are international experts with a world-wide recognition and involved in the leading research in the field. The book also covers applications and the use of Ge for optoelectronics, detectors and solar cells. An ideal reference work for students and scientists working in the field of physics of semiconductor devices and materials, as well as for engineers in research centres and industry. Both the newcomer and the expert should benefit from this unique book. - State-of-the-art information available for the first time as an all-in-source - Extensive reference list making it an indispensable reference book - Broad coverage from fundamental aspects up to industrial applications
Bias Temperature Instability For Devices And Circuits
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Author : Tibor Grasser
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-10-22
Bias Temperature Instability For Devices And Circuits written by Tibor Grasser and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-10-22 with Technology & Engineering categories.
This book provides a single-source reference to one of the more challenging reliability issues plaguing modern semiconductor technologies, negative bias temperature instability. Readers will benefit from state-of-the art coverage of research in topics such as time dependent defect spectroscopy, anomalous defect behavior, stochastic modeling with additional metastable states, multiphonon theory, compact modeling with RC ladders and implications on device reliability and lifetime.