Reliability Of Power Gallium Nitride Based Transistors

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Reliability Of Power Gallium Nitride Based Transistors

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Author : Denis Marcon
language : en
Publisher: Legare Street Press
Release Date : 2023-07-18

Reliability Of Power Gallium Nitride Based Transistors written by Denis Marcon and has been published by Legare Street Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2023-07-18 with categories.

In this cutting-edge study, Denis Marcon examines the reliability of power gallium nitride (GaN) based transistors. Using advanced simulation techniques and experimental data, he develops new models for predicting the reliability of these devices under various operating conditions. This book will be of particular interest to researchers and engineers working on power electronics and related fields. This work has been selected by scholars as being culturally important, and is part of the knowledge base of civilization as we know it. This work is in the "public domain in the United States of America, and possibly other nations. Within the United States, you may freely copy and distribute this work, as no entity (individual or corporate) has a copyright on the body of the work. Scholars believe, and we concur, that this work is important enough to be preserved, reproduced, and made generally available to the public. We appreciate your support of the preservation process, and thank you for being an important part of keeping this knowledge alive and relevant.

Power Gan Devices

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Author : Matteo Meneghini
language : en
Publisher: Springer
Release Date : 2016-09-08

Power Gan Devices written by Matteo Meneghini and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-09-08 with Technology & Engineering categories.

This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.

Reliability Of Power Gallium Nitride Based Transistors Primary Source Edition

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Author : Denis Marcon
language : en
Publisher: Nabu Press
Release Date : 2013-12-08

Reliability Of Power Gallium Nitride Based Transistors Primary Source Edition written by Denis Marcon and has been published by Nabu Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-12-08 with categories.

This is a reproduction of a book published before 1923. This book may have occasional imperfections such as missing or blurred pages, poor pictures, errant marks, etc. that were either part of the original artifact, or were introduced by the scanning process. We believe this work is culturally important, and despite the imperfections, have elected to bring it back into print as part of our continuing commitment to the preservation of printed works worldwide. We appreciate your understanding of the imperfections in the preservation process, and hope you enjoy this valuable book. ++++ The below data was compiled from various identification fields in the bibliographic record of this title. This data is provided as an additional tool in helping to ensure edition identification: ++++ Reliability Of Power Gallium Nitride Based Transistors Denis Marcon Marcon Denis

Gallium Nitride Enabled High Frequency And High Efficiency Power Conversion

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Author : Gaudenzio Meneghesso
language : en
Publisher: Springer
Release Date : 2018-05-12

Gallium Nitride Enabled High Frequency And High Efficiency Power Conversion written by Gaudenzio Meneghesso and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-05-12 with Technology & Engineering categories.

This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion. Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers; Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency and lower cost power conversion; Enables design of smaller, cheaper and more efficient power supplies.

Reliabilitystudy Of Power Gallium Nitride Transistors

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Author :
language : en
Publisher: Marcon Denis
Release Date :

Reliabilitystudy Of Power Gallium Nitride Transistors written by and has been published by Marcon Denis this book supported file pdf, txt, epub, kindle and other format this book has been release on with categories.

Gallium Nitride Power Devices

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Author : Hongyu Yu
language : en
Publisher: CRC Press
Release Date : 2017-07-06

Gallium Nitride Power Devices written by Hongyu Yu and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-07-06 with Science categories.

GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technologies are listed as the top priority to be developed in many countries, including the United States, the European Union, Japan, and China. This book presents a comprehensive overview of GaN power device technologies, for example, material growth, property analysis, device structure design, fabrication process, reliability, failure analysis, and packaging. It provides useful information to both students and researchers in academic and related industries working on GaN power devices. GaN wafer growth technology is from Enkris Semiconductor, currently one of the leading players in commercial GaN wafers. Chapters 3 and 7, on the GaN transistor fabrication process and GaN vertical power devices, are edited by Dr. Zhihong Liu, who has been working on GaN devices for more than ten years. Chapters 2 and 5, on the characteristics of polarization effects and the original demonstration of AlGaN/GaN heterojunction field-effect transistors, are written by researchers from Southwest Jiaotong University. Chapters 6, 8, and 9, on surface passivation, reliability, and package technologies, are edited by a group of researchers from the Southern University of Science and Technology of China.

Quantitative Spectroscopy Of Reliability Limiting Traps In Operational Gallium Nitride Based Transistors Using Thermal And Optical Methods

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Author : Anup Sasikumar
language : en
Publisher:
Release Date : 2014

Quantitative Spectroscopy Of Reliability Limiting Traps In Operational Gallium Nitride Based Transistors Using Thermal And Optical Methods written by Anup Sasikumar and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014 with categories.

Gallium nitride (GaN) based high electron mobility transistors (HEMTs) have shown a lot of promise in high voltage, high power, and high radiation applications. However the full realization of the III-nitride potential and large scale adoption of this technology has been hindered by the existence of electrically active defects that manifest as deep levels in the energy bandgap. These deep levels can potentially act as charge trapping centers limiting device performance and long term reliability. It is therefore imperative to monitor these traps in operational GaN HEMTs as close as possible to their real world operational conditions. With that goal in mind, in this dissertation, a suite of advanced thermal and optical based trap spectroscopy methods and models collectively known as constant drain current deep level (thermal) transient spectroscopy and deep level optical spectroscopy (CID-DLTS/DLOS) were developed and expanded upon to directly probe and track traps in three terminal operational GaN HEMTs. These techniques have allowed an unprecedented ability to quantitatively track trap levels throughout the wide bandgap of operational GaN devices. Depending on their mode of switching (gate-controlled versus drain-controlled) the techniques are able to distinguish between under gate and access region defects irrespective of device design and/or operational history. The devices studied here were subjected to a range of different stressors and very different trap induced degradation mechanisms were identified that further confirms the need for such high resolution defect spectroscopic studies in GaN HEMTs. Specifically the GaN HEMTs studied here were subjected to three very different kinds of stressors, i) high frequency moderate drain voltage (50 V) accelerated lifetime stressor were applied to GaN HEMTs optimized for radio frequency (RF) applications, ii) very high off-state drain voltage (up to 600 V) stressors were applied to GaN-on-Si MISHEMTs optimized for power switching applications, and iii) high energy particle irradiation (in this case 1.8 MeV protons) stressor applied to high frequency GaN HEMTs targeted for RF space applications. In the case of the RF accelerated electrical life testing, the GaN HEMTs over an array of different suppliers (mostly commercial) showed the signature of a EC-0.57 eV trap that was was identified as occurring almost ubiquitously. This trap was determined to be causing knee-walkout degradation, drain-lag and linked directly to RF output power loss through its trapping/detrapping activity in the drain access region. This level was unambiguously located in the GaN buffer using a combination of CID-DLTS, and supporting nano-scale DLTS/DLOS approaches. It was observed that the detection of this buffer trap was observed to be highly dependent on the reverse gate leakage of the GaN HEMTs and an empirical leakage based filling model was proposed to describe the electron capture process in HEMTs with leakage (10-7 A/mm). In contrast, for GaN HEMTs with very low reverse gate leakage (

Gan Transistors For Efficient Power Conversion

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Author : Alex Lidow
language : en
Publisher: Efficient Power Publications
Release Date : 2012

Gan Transistors For Efficient Power Conversion written by Alex Lidow and has been published by Efficient Power Publications this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012 with Science categories.

Reliability And Failure Analysis Of Gan On Si Power Devices

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Author : Wen Yang
language : en
Publisher:
Release Date : 2021

Reliability And Failure Analysis Of Gan On Si Power Devices written by Wen Yang and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021 with categories.

Wide bandgap power semiconductor devices, especially Gallium Nitride (GaN) high electron mobility transistors (HEMTs), have gained a lot of attention for high power applications due to their low on-resistance and high switching speed compared to their silicon counterparts. However, the reliability and failure issues related to dynamic performance, gate reliability, and electrostatic discharge have limited the wide applications of GaN power devices. This dissertation presents a systematic study of reliability and failure analysis of GaN-on-Si power devices. Firstly, the correlation between the physical trap mechanisms and the dynamic on-resistance (R[subscript on]) degradation has been investigated using a multi-frequency C-V measurement during pulse-mode stress. The experimental results indicate that the deep-level traps originated from the buffer layer play a dominant role in the dynamic R[subscript on] degradation. Secondly, the Si substrate in GaN-on-Si lateral power devices can be used as an independent contact termination rather than a thermal cooling pad. Therefore, the substrate bias effect in dynamic R[subscript on] and Gate Charge (Q[subscript g]) is necessary to explore both conduction and switching loss in GaN-based converter. A reverse dual polarity (RDP) substrate pulse technique has been developed to mitigate the dynamic R[subscript on] degradation. Thirdly, the gate reliability issues, including Time-dependent dielectric breakdown (TDDB), and Bias Temperature Instability (BTI) have been explored to improve the current capability. The physical model of TDDB in GaN power devices has been established by applying the substrate biases. And three phases of threshold voltage degradation have been presented under Negative Bias Temperature Instability stress. Lastly, the ESD characteristics of GaN power devices are considered for the development of a monolithic GaN-on-Si platform. The breakdown mechanisms under ESD stress have been comprehensively studied using Transmission Line Pulse (TLP) and Very-fast Transmission Line Pulse (VFTLP) measurements.

Investigation Of Reliability In Gallium Nitride High Electron Mobility Transistors Using Equivalent Circuit Models For Use In High Power High Frequency Microwave Amplifiers

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Author : Benjamin David Huebschman
language : en
Publisher:
Release Date : 2010

Investigation Of Reliability In Gallium Nitride High Electron Mobility Transistors Using Equivalent Circuit Models For Use In High Power High Frequency Microwave Amplifiers written by Benjamin David Huebschman and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010 with categories.