Resistive Switching Phenomena Of Extended Defects In Nb Doped Srtio3 Under Influence Of External Gradients
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Resistive Switching Phenomena Of Extended Defects In Nb Doped Srtio3 Under Influence Of External Gradients
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Author : Christian Rodenbücher
language : en
Publisher: Forschungszentrum Jülich
Release Date : 2014
Resistive Switching Phenomena Of Extended Defects In Nb Doped Srtio3 Under Influence Of External Gradients written by Christian Rodenbücher and has been published by Forschungszentrum Jülich this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014 with categories.
Cognitive Applications In Resistive Memories
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Author : Lutz Stephan Nielen
language : en
Publisher: BoD – Books on Demand
Release Date : 2020-08-07
Cognitive Applications In Resistive Memories written by Lutz Stephan Nielen and has been published by BoD – Books on Demand this book supported file pdf, txt, epub, kindle and other format this book has been release on 2020-08-07 with Technology & Engineering categories.
The upcoming trends in information technology follow irresistibly the predicted changes of the Internet of Things (IoT). That requires enhanced performance of mobile electronics, thus memory techniques face a growing number of challenges. Redox-based resistive switches (ReRAM) are highly attractive devices for implementation of ultimately-scaled energy-efficient memories. In this thesis, associative memories and sorting networks based on resistive switches are investigated. These cognitive functions highlight the potential of brain inspired computing in memory and are considered as a key-enabler for beyond von-Neumann computer architectures.
The Defect Chemistry Of Metal Oxides
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Author : Donald Morgan Smyth
language : en
Publisher: Oxford University Press on Demand
Release Date : 2000
The Defect Chemistry Of Metal Oxides written by Donald Morgan Smyth and has been published by Oxford University Press on Demand this book supported file pdf, txt, epub, kindle and other format this book has been release on 2000 with Science categories.
The Defect Chemistry of Metal Oxides is a unique introduction to the equilibrium chemistry of solid inorganic compounds with a focus on metal oxides. Accessible to students with little or no background in defect chemistry, it explains how to apply basic principles and interpret the related behavior of materials. Topics discussed include lattice and electronic defects, doping effects, nonstoichiometry, and mass and charge transport. The text distinctly emphasizes the correlation between the general chemical properties of the constituent elements and the defect chemistry and transport properties of their compounds. It covers the types of defects formed, the effects of dopants, the amount and direction of nonstoichiometry, the depths of acceptor and donor levels, and more. Concluding chapters present up-to-date and detailed analyses of three systems: titanium dioxide, cobalt oxide and nickel oxide, and barium titanate. The Defect Chemistry of Metal Oxides is the only book of its kind that incorporates sample problems for students to solve. Suitable for a variety of courses in materials science and engineering, chemistry, and geochemistry, it also serves as a valuable reference for researchers and instructors.
Polarization Effects In Semiconductors
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Author : Debdeep Jena
language : en
Publisher: Springer Science & Business Media
Release Date : 2008
Polarization Effects In Semiconductors written by Debdeep Jena and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008 with Science categories.
Polarization Effects in Semiconductors: From Ab Initio Theory to Device Applications presents the latest understanding of the solid state physics, electronic implications and practical applications of the unique spontaneous or pyro-electric polarization charge of wurtzite compound semiconductors, and associated piezo-electric effects in strained thin film heterostructures. These heterostructures are used in wide band gap semiconductor based sensors, in addition to various electronic and opto-electronic semiconductor devices. The book covers the ab initio theory of polarization in cubic and hexagonal semiconductors, growth of thin film GaN, GaN/AlGaN GaAlN/ AlGaInN, and other nitrides, and SiC heterostructures. It discusses the effects of spontaneous and piezoelectric polarization on band diagrams and electronic properties of abrupt and compositionally graded heterostructures, electronic characterization of polarization-induced charge distributions by scanning-probe spectroscopies, and gauge factors and strain effects. In addition, polarization in extended defects, piezo-electric strain/charge engineering, and application to device design and processing are covered. The effects of polarization on the fundamental electron transport properties, and on the basic optical transitions are described. The crucial role of polarization in devices such as high electron mobility transistors (HEMTs) and light-emitting diodes (LEDs) is covered. The chapters are authored by professors and researchers in the fields of physics, applied physics and electrical engineering, who worked for 5 years under the "Polarization Effects in Semiconductors" DOD funded Multi Disciplinary University Research Initiative. This book will be of interest to graduate students and researchers working in the field of wide-bandgap semiconductor physics and their device applications. It will also be useful for practicing engineers in the field of wide-bandgap semiconductor device research and development.
Semiconductor Material And Device Characterization
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Author : Dieter K. Schroder
language : en
Publisher: John Wiley & Sons
Release Date : 2015-06-29
Semiconductor Material And Device Characterization written by Dieter K. Schroder and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015-06-29 with Technology & Engineering categories.
This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
Lithium Niobate Based Heterostructures
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Author : DR MAXIM. SUMETS
language : en
Publisher: IOP Publishing Limited
Release Date : 2024-10-15
Lithium Niobate Based Heterostructures written by DR MAXIM. SUMETS and has been published by IOP Publishing Limited this book supported file pdf, txt, epub, kindle and other format this book has been release on 2024-10-15 with Technology & Engineering categories.
This book explores the fundamental principles of fabricating LiNbO₃-based heterostructures, delving into their properties and the electron phenomena that drive their effective application in a range of devices.
Atomic Layer Deposition For Semiconductors
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Author : Cheol Seong Hwang
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-10-18
Atomic Layer Deposition For Semiconductors written by Cheol Seong Hwang and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-10-18 with Science categories.
Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.
Piezoelectric Energy Harvesting
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Author : Alper Erturk
language : en
Publisher: John Wiley & Sons
Release Date : 2011-04-04
Piezoelectric Energy Harvesting written by Alper Erturk and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011-04-04 with Technology & Engineering categories.
The transformation of vibrations into electric energy through the use of piezoelectric devices is an exciting and rapidly developing area of research with a widening range of applications constantly materialising. With Piezoelectric Energy Harvesting, world-leading researchers provide a timely and comprehensive coverage of the electromechanical modelling and applications of piezoelectric energy harvesters. They present principal modelling approaches, synthesizing fundamental material related to mechanical, aerospace, civil, electrical and materials engineering disciplines for vibration-based energy harvesting using piezoelectric transduction. Piezoelectric Energy Harvesting provides the first comprehensive treatment of distributed-parameter electromechanical modelling for piezoelectric energy harvesting with extensive case studies including experimental validations, and is the first book to address modelling of various forms of excitation in piezoelectric energy harvesting, ranging from airflow excitation to moving loads, thus ensuring its relevance to engineers in fields as disparate as aerospace engineering and civil engineering. Coverage includes: Analytical and approximate analytical distributed-parameter electromechanical models with illustrative theoretical case studies as well as extensive experimental validations Several problems of piezoelectric energy harvesting ranging from simple harmonic excitation to random vibrations Details of introducing and modelling piezoelectric coupling for various problems Modelling and exploiting nonlinear dynamics for performance enhancement, supported with experimental verifications Applications ranging from moving load excitation of slender bridges to airflow excitation of aeroelastic sections A review of standard nonlinear energy harvesting circuits with modelling aspects.
Lead Free Piezoelectrics
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Author : Shashank Priya
language : en
Publisher: Springer Science & Business Media
Release Date : 2011-11-19
Lead Free Piezoelectrics written by Shashank Priya and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011-11-19 with Technology & Engineering categories.
Ecological restrictions in many parts of the world are demanding the elimination of Pb from all consumer items. At this moment in the piezoelectric ceramics industry, there is no issue of more importance than the transition to lead-free materials. The goal of Lead-Free Piezoelectrics is to provide a comprehensive overview of the fundamentals and developments in the field of lead-free materials and products to leading researchers in the world. The text presents chapters on demonstrated applications of the lead-free materials, which will allow readers to conceptualize the present possibilities and will be useful for both students and professionals conducting research on ferroelectrics, piezoelectrics, smart materials, lead-free materials, and a variety of applications including sensors, actuators, ultrasonic transducers and energy harvesters.
Resistive Random Access Memory Rram
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Author : Shimeng Yu
language : en
Publisher: Morgan & Claypool Publishers
Release Date : 2016-03-18
Resistive Random Access Memory Rram written by Shimeng Yu and has been published by Morgan & Claypool Publishers this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-03-18 with Technology & Engineering categories.
RRAM technology has made significant progress in the past decade as a competitive candidate for the next generation non-volatile memory (NVM). This lecture is a comprehensive tutorial of metal oxide-based RRAM technology from device fabrication to array architecture design. State-of-the-art RRAM device performances, characterization, and modeling techniques are summarized, and the design considerations of the RRAM integration to large-scale array with peripheral circuits are discussed. Chapter 2 introduces the RRAM device fabrication techniques and methods to eliminate the forming process, and will show its scalability down to sub-10 nm regime. Then the device performances such as programming speed, variability control, and multi-level operation are presented, and finally the reliability issues such as cycling endurance and data retention are discussed. Chapter 3 discusses the RRAM physical mechanism, and the materials characterization techniques to observe the conductive filaments and the electrical characterization techniques to study the electronic conduction processes. It also presents the numerical device modeling techniques for simulating the evolution of the conductive filaments as well as the compact device modeling techniques for circuit-level design. Chapter 4 discusses the two common RRAM array architectures for large-scale integration: one-transistor-one-resistor (1T1R) and cross-point architecture with selector. The write/read schemes are presented and the peripheral circuitry design considerations are discussed. Finally, a 3D integration approach is introduced for building ultra-high density RRAM array. Chapter 5 is a brief summary and will give an outlook for RRAM’s potential novel applications beyond the NVM applications.