Resolution Enhancement Techniques In Deep Uv Optical Lithography For The 90nm Silicon Technological Node And Below
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Resolution Enhancement Techniques In Deep Uv Optical Lithography For The 90nm Silicon Technological Node And Below
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Author : Gianfranco Capetti
language : en
Publisher:
Release Date : 2005
Resolution Enhancement Techniques In Deep Uv Optical Lithography For The 90nm Silicon Technological Node And Below written by Gianfranco Capetti and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005 with categories.
Microelectronics Technology And Devices Sbmicro 2002
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Author : Electrochemical Society. Electronics Division
language : en
Publisher: The Electrochemical Society
Release Date : 2002
Microelectronics Technology And Devices Sbmicro 2002 written by Electrochemical Society. Electronics Division and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002 with Technology & Engineering categories.
Nanometer Cmos
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Author : Frank Schwierz
language : en
Publisher: Pan Stanford Publishing
Release Date : 2010-02-28
Nanometer Cmos written by Frank Schwierz and has been published by Pan Stanford Publishing this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010-02-28 with Technology & Engineering categories.
This book presents the material necessary for understanding the physics, operation, design, and performance of modern MOSFETs with nanometer dimensions. Other topics covered include high-k dielectrics and mobility enhancement techniques, MOSFETs for RF (radio frequency) applications, MOSFET fabrication technology.
Radiation Effects In Semiconductors
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Author : Krzysztof Iniewski
language : en
Publisher: CRC Press
Release Date : 2018-09-03
Radiation Effects In Semiconductors written by Krzysztof Iniewski and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-09-03 with Technology & Engineering categories.
Space applications, nuclear physics, military operations, medical imaging, and especially electronics (modern silicon processing) are obvious fields in which radiation damage can have serious consequences, i.e., degradation of MOS devices and circuits. Zeroing in on vital aspects of this broad and complex topic, Radiation Effects in Semiconductors addresses the ever-growing need for a clear understanding of radiation effects on semiconductor devices and circuits to combat potential damage it can cause. Features a chapter authored by renowned radiation authority Lawrence T. Clark on Radiation Hardened by Design SRAM Strategies for TID and SEE Mitigation This book analyzes the radiation problem, focusing on the most important aspects required for comprehending the degrading effects observed in semiconductor devices, circuits, and systems when they are irradiated. It explores how radiation interacts with solid materials, providing a detailed analysis of three ways this occurs: Photoelectric effect, Compton effect, and creation of electron-positron pairs. The author explains that the probability of these three effects occurring depends on the energy of the incident photon and the atomic number of the target. The book also discusses the effects that photons can have on matter—in terms of ionization effects and nuclear displacement Written for post-graduate researchers, semiconductor engineers, and nuclear and space engineers with some electronics background, this carefully constructed reference explains how ionizing radiation is creating damage in semiconducting devices and circuits and systems—and how that damage can be avoided in areas such as military/space missions, nuclear applications, plasma damage, and X-ray-based techniques. It features top-notch international experts in industry and academia who address emerging detector technologies, circuit design techniques, new materials, and innovative system approaches.
Principles Of Lithography
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Author : Harry J. Levinson
language : en
Publisher: SPIE Press
Release Date : 2005
Principles Of Lithography written by Harry J. Levinson and has been published by SPIE Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005 with Technology & Engineering categories.
Lithography is a field in which advances proceed at a swift pace. This book was written to address several needs, and the revisions for the second edition were made with those original objectives in mind. Many new topics have been included in this text commensurate with the progress that has taken place during the past few years, and several subjects are discussed in more detail. This book is intended to serve as an introduction to the science of microlithography for people who are unfamiliar with the subject. Topics directly related to the tools used to manufacture integrated circuits are addressed in depth, including such topics as overlay, the stages of exposure, tools, and light sources. This text also contains numerous references for students who want to investigate particular topics in more detail, and they provide the experienced lithographer with lists of references by topic as well. It is expected that the reader of this book will have a foundation in basic physics and chemistry. No topics will require knowledge of mathematics beyond elementary calculus.
Semiconductor Packaging
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Author : Andrea Chen
language : en
Publisher: CRC Press
Release Date : 2016-04-19
Semiconductor Packaging written by Andrea Chen and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-04-19 with Technology & Engineering categories.
In semiconductor manufacturing, understanding how various materials behave and interact is critical to making a reliable and robust semiconductor package. Semiconductor Packaging: Materials Interaction and Reliability provides a fundamental understanding of the underlying physical properties of the materials used in a semiconductor package. By tying together the disparate elements essential to a semiconductor package, the authors show how all the parts fit and work together to provide durable protection for the integrated circuit chip within as well as a means for the chip to communicate with the outside world. The text also covers packaging materials for MEMS, solar technology, and LEDs and explores future trends in semiconductor packages.
Electrical Characterization Of Silicon On Insulator Materials And Devices
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Author : Sorin Cristoloveanu
language : en
Publisher: Springer
Release Date : 2014-02-23
Electrical Characterization Of Silicon On Insulator Materials And Devices written by Sorin Cristoloveanu and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-02-23 with Technology & Engineering categories.
Silicon on Insulator is more than a technology, more than a job, and more than a venture in microelectronics; it is something different and refreshing in device physics. This book recalls the activity and enthu siasm of our SOl groups. Many contributing students have since then disappeared from the SOl horizon. Some of them believed that SOl was the great love of their scientific lives; others just considered SOl as a fantastic LEGO game for adults. We thank them all for kindly letting us imagine that we were guiding them. This book was very necessary to many people. SOl engineers will certainly be happy: indeed, if the performance of their SOl components is not always outstanding, they can now safely incriminate the relations given in the book rather than their process. Martine, Gunter, and Y. S. Chang can contemplate at last the amount of work they did with the figures. Our SOl accomplices already know how much we borrowed from their expertise and would find it indecent to have their detailed contri butions listed. Jean-Pierre and Dimitris incited the book, while sharing their experience in the reliability of floating bodies. Our families and friends now realize the SOl capability of dielectrically isolating us for about two years in a BOX. Our kids encouraged us to start writing. Our wives definitely gave us the courage to stop writing. They had a hard time fighting the symptoms of a rapidly developing SOl allergy.
Silicon Vlsi Technology
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Author : James D. Plummer
language : en
Publisher: Prentice Hall
Release Date : 2015-12-01
Silicon Vlsi Technology written by James D. Plummer and has been published by Prentice Hall this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015-12-01 with Technology & Engineering categories.
For one-quarter/semester, senior/graduate level courses in Fabrication Processes. Unique in approach, this text provides an integrated view of silicon technology--with an emphasis on modern computer simulation. It describes not only the manufacturing practice associated with the technologies used in silicon chip fabrication, but also the underlying scientific basis for those technologies.
Design And Development Of Material Based Resolution Enhancement Techniques For Optical Lithography
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Author : Xinyu Gu
language : en
Publisher:
Release Date : 2011
Design And Development Of Material Based Resolution Enhancement Techniques For Optical Lithography written by Xinyu Gu and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011 with categories.
The relentless commercial drive for smaller, faster, and cheaper semi-conductor devices has pushed the existing patterning technologies to their limits. Photolithography, one of the crucial processes that determine the feature size in a microchip, is currently facing this challenge. The immaturity of next generation lithography (NGL) technology, particularly EUV, forces the semiconductor industry to explore new processing technologies that can extend the use of the existing lithographic method (i.e. ArF lithography) to enable production beyond the 32 nm node. Two new resolution enhancement techniques, double exposure lithography (DEL) and pitch division lithography (PDL), were proposed that could extend the resolution capability of the current lithography tools. This thesis describes the material and process development for these two techniques. DEL technique requires two exposure passes in a single lithographic cycle. The first exposure is performed with a mask that has a relaxed pitch, and the mask is then shifted by half pitch and re-used for the second exposure. The resolution of the resulting pattern on the wafer is doubled with respect to the features on the mask. This technique can be enabled with a type of material that functions as optical threshold layer (OTL). The key requirements for materials to be useful for OTL are a photoinduced isothermal phase transition and permeance modulation with reverse capabilities. A number of materials were designed and tested based on long alkyl side chain crystalline polymers that bear azobenzene pendant groups on the main chain. The target copolymers were synthesized and fully characterized. A proof-of-concept for the OTL design was successfully demonstrated with a series of customized analytical techniques. PDL technique doubles the line density of a grating mask with only a single exposure and is fully compatible with current lithography tools. Thus, this technique is capable of extending the resolution limit of the current ArF lithography without increasing the cost-of-ownership. Pitch division with a single exposure is accomplished by a dual-tone photoresist. This thesis presents a novel method to enable a dual-tone behavior by addition of a photobase generator (PBG) into a conventional resist formulation. The PBG was optimized to function as an exposure-dependent base quencher, which mainly neutralizes the acid generated in high dose regions but has only a minor influence in low dose regions. The resulting acid concentration profile is a parabola-like function of exposure dose, and only the medium exposure dose produces a sufficient amount of acid to switch the resist solubility. This acid response is exploited to produce pitch division patterns by creating a set of negative-tone lines in the overexposed regions in addition to the conventional positive-tone lines. A number of PBGs were synthesized and characterized, and their decomposition rate constants were studied using various techniques. Simulations were carried out to assess the feasibility of pitch division lithography. It was concluded that pitch division lithography is advantageous when the process aggressiveness factor k1 is below 0.27. Finally, lithography evaluations of these dual-tone resists demonstrated a proof-of-concept for pitch division lithography with 45 nm pitch divided line and space patterns for a k1 of 0.13.
Resolution Enhancement Techniques In Optical Lithography
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Author : Alfred Kwok-Kit Wong
language : en
Publisher: SPIE Press
Release Date : 2001
Resolution Enhancement Techniques In Optical Lithography written by Alfred Kwok-Kit Wong and has been published by SPIE Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2001 with Science categories.
Ever-smaller IC devices are pushing the optical lithography envelope, increasing the importance of resolution enhancement techniques. This tutorial encompasses two decades of research. It discusses theoretical and practical aspects of commonly used techniques, including optical imaging and resolution, modified illumination, optical proximity correction, alternating and attenuating phase-shifting masks, selecting RETs, and second-generation RETs. Useful for students and practicing lithographers