Scanned Probe Spectroscopy Of Traps In Cross Sectioned Algan Gan Devices
DOWNLOAD
Download Scanned Probe Spectroscopy Of Traps In Cross Sectioned Algan Gan Devices PDF/ePub or read online books in Mobi eBooks. Click Download or Read Online button to get Scanned Probe Spectroscopy Of Traps In Cross Sectioned Algan Gan Devices book now. This website allows unlimited access to, at the time of writing, more than 1.5 million titles, including hundreds of thousands of titles in various foreign languages. If the content not found or just blank you must refresh this page
Scanned Probe Spectroscopy Of Traps In Cross Sectioned Algan Gan Devices
DOWNLOAD
Author : Darryl A. Gleason
language : en
Publisher:
Release Date : 2019
Scanned Probe Spectroscopy Of Traps In Cross Sectioned Algan Gan Devices written by Darryl A. Gleason and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019 with Gallium nitride categories.
In this work, scanning probe microscopy (SPM) methods are developed and extended to spatially resolve performance-hampering electrically-active defects, known as traps, present in AlGaN/GaN Schottky barrier diodes (SBDs) and high electron mobility transistors (HEMTs). Commercial devices used in these studies were cross-sectioned to expose electrically-active regions which are traditionally inaccessible to SPM techniques. Surface potential transients (SPTs) are collected over the cross-sectioned faces of devices using nanometer-scale scanning probe deep-level transient spectroscopy (SP-DLTS), a millisecond time-resolved derivative technique of scanning Kelvin probe microscopy (SKPM) that was implemented with a custom system designed to study SBDs and HEMTs in cross-section. Detected SPTs are indicative of carrier emission from bulk defect-related trap states. In conjunction with similar measurements of these trap states using macroscopic techniques, finite-element simulations provide strong, corroborating evidence that observable SPTs are produced by traps located in the bulk of these samples and are therefore not a result of surface states or surface-related phenomena. GaN-based materials offer advantages over many alternatives in high-frequency and high-voltage applications. Features including a wide bandgap and a large breakdown voltage often translate to improved efficiency, performance, and cost in many electronic systems. However, GaN-based material research is still maturing, and charge trapping may be a limiting factor in GaN electrical performance and therefore hinder its widespread application and adoption. Determining the signatures and spatial distributions of active traps in GaN devices is critical for understanding trap-related mechanisms of device failure as well as the growth or fabrication steps which may be responsible for introducing these defect states. Powerful techniques like deep-level transient spectroscopy (DLTS) exist for identifying specific traps in GaN, but the macroscopic variants of DLTS measure averaged trapping characteristics and are unable to precisely spatially locate the traps they measure. SP-DLTS is an extension of atomic force microscopy (AFM) and was developed approximately seven years prior to this writing. The technique uses SKPM to measure the local surface potential which is sensitive to modulations in the local trapped charge. Probing and analyzing the temperature-dependent SPTs using the same approach applied in the aforementioned conventional techniques reveals the signatures of traps which dominate the local SP-DLTS signal. Performing this measurement over a grid of locations (i.e. a map) provides nanometer-scale resolution of transients and therefore active trap modulation. However, device geometry is one primary limitation of plan-view or "top-down" SP-DLTS due to the sensitivity of the technique only to near-surface charge. Device features like electrodes can mask or electrically screen traps located in active device regions. Furthermore, in commercial devices like those studied here, metallic and passivation layers bury, screen, and/or mask traps in many device regions and completely prevent SP-DLTS probe access. Here, commercial AlGaN/GaN SBDs and HEMTs are cross-sectioned to expose their length and depth with sufficiently low surface damage to permit electrical access to traps beneath the cross-sectioned surface. SP-DLTS is used to detect and identify two distinct trap species with energies near EC − 0.6 eV and EC − 0.9 eV. Unlike macroscopic techniques, SP-DLTS affords trap studies under arbitrary bias conditions; the measurements indicate that trap occupancy modulation is observable during both the device on- and off-state, the latter of which is generally unreported in the literature since macroscopic techniques typically measure trap emission during the device on-state. In addition to qualitatively reproducing these experimental results, finite-element HEMT simulations reveal that current leakage mechanisms and the dopant-to-trap ratio in the GaN buffer likely strongly influence the signatures of detected traps by DLTS-based techniques. Collectively, this experimental and computational approach makes a significant advancement in the study and characterization of traps in AlGaN/GaN devices.
Extended Defects In Semiconductors
DOWNLOAD
Author : D. B. Holt
language : en
Publisher: Cambridge University Press
Release Date : 2007-04-12
Extended Defects In Semiconductors written by D. B. Holt and has been published by Cambridge University Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007-04-12 with Science categories.
A discussion of the basic properties of structurally extended defects, their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.
Power Gan Devices
DOWNLOAD
Author : Matteo Meneghini
language : en
Publisher: Springer
Release Date : 2016-09-08
Power Gan Devices written by Matteo Meneghini and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-09-08 with Technology & Engineering categories.
This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.
Chemical Abstracts
DOWNLOAD
Author :
language : en
Publisher:
Release Date : 2002
Chemical Abstracts written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002 with Chemistry categories.
Gan And Related Materials
DOWNLOAD
Author : Stephen J. Pearton
language : en
Publisher: CRC Press
Release Date : 2021-10-08
Gan And Related Materials written by Stephen J. Pearton and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2021-10-08 with Science categories.
Presents views on current developments in heat and mass transfer research related to the modern development of heat exchangers. Devotes special attention to the different modes of heat and mass transfer mechanisms in relation to the new development of heat exchangers design. Dedicates particular attention to the future needs and demands for further development in heat and mass transfer. GaN and related materials are attracting tremendous interest for their applications to high-density optical data storage, blue/green diode lasers and LEDs, high-temperature electronics for high-power microwave applications, electronics for aerospace and automobiles, and stable passivation films for semiconductors. In addition, there is great scientific interest in the nitrides, because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. This series provides a forum for the latest research in this rapidly-changing field, offering readers a basic understanding of new developments in recent research. Series volumes feature a balance between original theoretical and experimental research in basic physics, device physics, novel materials and quantum structures, processing, and systems.
The Physics Of Semiconductor Devices
DOWNLOAD
Author : R. K. Sharma
language : en
Publisher: Springer
Release Date : 2019-01-31
The Physics Of Semiconductor Devices written by R. K. Sharma and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-01-31 with Technology & Engineering categories.
This book disseminates the current knowledge of semiconductor physics and its applications across the scientific community. It is based on a biennial workshop that provides the participating research groups with a stimulating platform for interaction and collaboration with colleagues from the same scientific community. The book discusses the latest developments in the field of III-nitrides; materials & devices, compound semiconductors, VLSI technology, optoelectronics, sensors, photovoltaics, crystal growth, epitaxy and characterization, graphene and other 2D materials and organic semiconductors.
Electrical Electronics Abstracts
DOWNLOAD
Author :
language : en
Publisher:
Release Date : 1997
Electrical Electronics Abstracts written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1997 with Electrical engineering categories.
Metalorganic Vapor Phase Epitaxy Movpe
DOWNLOAD
Author : Stuart Irvine
language : en
Publisher: John Wiley & Sons
Release Date : 2019-10-07
Metalorganic Vapor Phase Epitaxy Movpe written by Stuart Irvine and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2019-10-07 with Technology & Engineering categories.
Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).
Polarization Effects In Semiconductors
DOWNLOAD
Author : Debdeep Jena
language : en
Publisher: Springer Science & Business Media
Release Date : 2008
Polarization Effects In Semiconductors written by Debdeep Jena and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008 with Science categories.
Polarization Effects in Semiconductors: From Ab Initio Theory to Device Applications presents the latest understanding of the solid state physics, electronic implications and practical applications of the unique spontaneous or pyro-electric polarization charge of wurtzite compound semiconductors, and associated piezo-electric effects in strained thin film heterostructures. These heterostructures are used in wide band gap semiconductor based sensors, in addition to various electronic and opto-electronic semiconductor devices. The book covers the ab initio theory of polarization in cubic and hexagonal semiconductors, growth of thin film GaN, GaN/AlGaN GaAlN/ AlGaInN, and other nitrides, and SiC heterostructures. It discusses the effects of spontaneous and piezoelectric polarization on band diagrams and electronic properties of abrupt and compositionally graded heterostructures, electronic characterization of polarization-induced charge distributions by scanning-probe spectroscopies, and gauge factors and strain effects. In addition, polarization in extended defects, piezo-electric strain/charge engineering, and application to device design and processing are covered. The effects of polarization on the fundamental electron transport properties, and on the basic optical transitions are described. The crucial role of polarization in devices such as high electron mobility transistors (HEMTs) and light-emitting diodes (LEDs) is covered. The chapters are authored by professors and researchers in the fields of physics, applied physics and electrical engineering, who worked for 5 years under the "Polarization Effects in Semiconductors" DOD funded Multi Disciplinary University Research Initiative. This book will be of interest to graduate students and researchers working in the field of wide-bandgap semiconductor physics and their device applications. It will also be useful for practicing engineers in the field of wide-bandgap semiconductor device research and development.
Power Electronics Device Applications Of Diamond Semiconductors
DOWNLOAD
Author : Satoshi Koizumi
language : en
Publisher: Woodhead Publishing
Release Date : 2018-06-29
Power Electronics Device Applications Of Diamond Semiconductors written by Satoshi Koizumi and has been published by Woodhead Publishing this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-06-29 with Technology & Engineering categories.
Power Electronics Device Applications of Diamond Semiconductors presents state-of-the-art research on diamond growth, doping, device processing, theoretical modeling and device performance. The book begins with a comprehensive and close examination of diamond crystal growth from the vapor phase for epitaxial diamond and wafer preparation. It looks at single crystal vapor deposition (CVD) growth sectors and defect control, ultra high purity SC-CVD, SC diamond wafer CVD, heteroepitaxy on Ir/MqO and needle-induced large area growth, also discussing the latest doping and semiconductor characterization methods, fundamental material properties and device physics. The book concludes with a discussion of circuits and applications, featuring the switching behavior of diamond devices and applications, high frequency and high temperature operation, and potential applications of diamond semiconductors for high voltage devices. Includes contributions from today's most respected researchers who present the latest results for diamond growth, doping, device fabrication, theoretical modeling and device performance Examines why diamond semiconductors could lead to superior power electronics Discusses the main challenges to device realization and the best opportunities for the next generation of power electronics