Semiconductor Interfaces And Microstructures

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Semiconductor Interfaces Microstructures And Devices
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Author : Zhe Chuan Feng
language : en
Publisher: CRC Press
Release Date : 1993-01-01
Semiconductor Interfaces Microstructures And Devices written by Zhe Chuan Feng and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1993-01-01 with Science categories.
A semiconductor interface is the contact between the semiconductor itself and a metal. The interface is a site of change, and it is imperative to ensure that the semiconducting material is sealed at this point to maintain its reliability. This book examines various aspects of interfaces, showing how they can affect microstructures and devices such as infrared photodetectors (as used in nightsights) and blue diode lasers. It presents various techniques for examining different types of semiconductor material and suggests future potential commercial applications for different semiconductor devices. Written by experts in their fields and focusing on metallic semiconductors (Cadmium Telluride and related compounds), this comprehensive overview of recent developments is an essential reference for those working in the semiconductor industry and provides a concise and comprehensive introduction to those new to the field.
Semiconductor Interfaces And Microstructures
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Author : Zhe Chuan Feng
language : en
Publisher: World Scientific
Release Date : 1992
Semiconductor Interfaces And Microstructures written by Zhe Chuan Feng and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 1992 with Science categories.
1. Carrier transport in artificially structured two-dimensional semiconductor systems / W. Walukiewicz -- 2. Miniband conduction in semiconductor superlattices / A. Sibille, J.F. Palmier, C. Minot -- 3. Barrier width dependence of optical properties in semiconductor superlattices / J.J. Song, J.F. Zhou and J.M. Jacob -- 4. Radiative processes in GaAs/AlGaAs heterostructures / P.O. Holtz, B. Monemar and J. Merz -- 5. Type-I-type-II transition in GaAs/AlAs superlattices / G.H. Li -- 6. Photoluminescence studies of interface roughness in GaAs/AlAs quantum well structures / D. Gammon, B.V. Shanabrook and D.S. Katzer -- 7. Optical and magneto-optical properties of narrow In[symbol]Ga[symbol]As-GaAs quantum wells / D.C. Reynolds and K.R. Evans -- 8. Growth and studies of antimony based III-V compounds by magnetron sputter epitaxy using metalorganic and solid elemental sources / J.B. Webb and R. Rousina -- 9. Properties of Cd[symbol]Mn[symbol]Te films and Cd[symbol]Mn[symbol]Te-CdTe superlattices grown by pulsed laser evaporation and epitaxy / J.M. Wrobel and J.J. Dubowski -- 10. Zn[symbol]Cd[symbol]Se[symbol]Te[symbol] quatenary II-VI wide bandgap alloys and heterostructures / R.E. Nahory, M.J.S.P. Brasil and M.C. Tamargo -- 11. Intersubband transitions in SiGe/Si quantum structures/ R.P.G. Karunasiri, K.L. Wang and J.S. Park -- 12. High-temperature discrete devices in 6H-SiC: sublimation epitaxial growth, device technology and electrical performance / M.M. Anikin [und weitere]
Raman Scattering On Emerging Semiconductors And Oxides
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Author : Zhe Feng
language : en
Publisher: CRC Press
Release Date : 2024-09-16
Raman Scattering On Emerging Semiconductors And Oxides written by Zhe Feng and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2024-09-16 with Science categories.
Raman Scattering on Emerging Semiconductors and Oxides presents Raman scattering studies. It describes the key fundamental elements in applying Raman spectroscopies to various semiconductors and oxides without complicated and deep Raman theories. Across nine chapters, it covers: • SiC and IV-IV semiconductors, • III-GaN and nitride semiconductors, • III-V and II-VI semiconductors, • ZnO-based and GaO-based semiconducting oxides, • Graphene, ferroelectric oxides, and other emerging materials, • Wide-bandgap semiconductors of SiC, GaN, and ZnO, and • Ultra-wide gap semiconductors of AlN, Ga2O3, and graphene. Key achievements from the author and collaborators in the above fields are referred to and cited with typical Raman spectral graphs and analyses. Written for engineers, scientists, and academics, this comprehensive book will be fundamental for newcomers in Raman spectroscopy. Zhe Chuan Feng has had an impressive career spanning many years of important work in engineering and tech, including as a professor at the Graduate Institute of Photonics & Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei; establishing the Science Exploring Lab; joining Kennesaw State University as an adjunct professor, part-time; and at the Department of Electrical and Computer Engineering, Southern Polytechnic College of Engineering and Engineering Technology. Currently, he is focusing on materials research for LED, III-nitrides, SiC, ZnO, other semiconductors/oxides, and nanostructures and has devoted time to materials research and growth of III-V and II-VI compounds, LED, III nitrides, SiC, ZnO, GaO, and other semiconductors/oxides. Professor Feng has also edited and published multiple review books in his field, alongside authoring scientific journal papers and conference/proceeding papers. He has organized symposiums and been an invited speaker at different international conferences and universities. He has also served as a guest editor for special journal issues.
Control Of Semiconductor Interfaces
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Author : I. Ohdomari
language : en
Publisher: Elsevier
Release Date : 2017-05-03
Control Of Semiconductor Interfaces written by I. Ohdomari and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-05-03 with Science categories.
This book focuses exclusively on control of interfacial properties and structures for semiconductor device applications from the point of view of improving and developing novel electrical properties. The following topics are covered: metal-semiconductors, semiconductor hetero-interfaces, characterization, semiconducting new materials, insulator-semiconductor, interfaces in device, control of interface formation, control of interface properties, contact metallization.A variety of up-to-date research topics such as atomic layer epitaxy, atomic layer passivation, atomic scale characterization including STM and SR techniques, single ion implementation, self-organization crystal growth, in situ measurements for process control and extremely high-spatial resolution analysis techniques, are also included. Furthermore it bridges the macroscopic, mesoscopic, and atomic-scale regimes of semicondutor interfaces, describing the state of the art in forming, controlling and characterizating unique semiconductor interfaces, which will be of practical importance in advanced devices. Intended for both technologists who require an up-to-date assessment of methods for interface formation, processing and characterization, and solid state researchers who desire the latest developments in understanding the basic mechanisms of interface physics, chemistry and electronics, this book will be a welcome addition to the existing literature.
Heteroepitaxy Of Semiconductors
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Author : John E. Ayers
language : en
Publisher: CRC Press
Release Date : 2018-10-08
Heteroepitaxy Of Semiconductors written by John E. Ayers and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-10-08 with Technology & Engineering categories.
Heteroepitaxy has evolved rapidly in recent years. With each new wave of material/substrate combinations, our understanding of how to control crystal growth becomes more refined. Most books on the subject focus on a specific material or material family, narrowly explaining the processes and techniques appropriate for each. Surveying the principles common to all types of semiconductor materials, Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization is the first comprehensive, fundamental introduction to the field. This book reflects our current understanding of nucleation, growth modes, relaxation of strained layers, and dislocation dynamics without emphasizing any particular material. Following an overview of the properties of semiconductors, the author introduces the important heteroepitaxial growth methods and provides a survey of semiconductor crystal surfaces, their structures, and nucleation. With this foundation, the book provides in-depth descriptions of mismatched heteroepitaxy and lattice strain relaxation, various characterization tools used to monitor and evaluate the growth process, and finally, defect engineering approaches. Numerous examples highlight the concepts while extensive micrographs, schematics of experimental setups, and graphs illustrate the discussion. Serving as a solid starting point for this rapidly evolving area, Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization makes the principles of heteroepitaxy easily accessible to anyone preparing to enter the field.
Ultrafast Spectroscopy Of Semiconductors And Semiconductor Nanostructures
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Author : Jagdeep Shah
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-11-21
Ultrafast Spectroscopy Of Semiconductors And Semiconductor Nanostructures written by Jagdeep Shah and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-11-21 with Science categories.
The field of ultrafast spectroscopy of semiconductors and their nanostruc tures continues to be an active field of research. Exciting new developments have taken place since the first edition of this book was completed in 1995. This revised edition includes a discussion of many of these recent develop ments in the field. This is accomplished by adding a chapter on Recent De velopments at the end of the book. This approach was selected to provide a discussion of results while they are still relatively recent. Results published before the end of May 1998 were considered for inclusion in this book. The objective of this revised edition remains the same as before: to provide a co hesive discussion of the many diverse contributions of ultrafast spectrosco py to the field of semiconductors. Extensive cross-references are made to earlier chapters in order to accomplish this goal. The chapter on Recent Developments begins with a brief discussion of new lasers, new techniques of ultrafast spectroscopy and novel nanostruc tures. This is followed by a section on Coherent Spectroscopy where some of the most interesting recent developments have taken place. These include observation of quantum kinetic effects, effects that require going beyond the mean-field approach of the semiconductor Bloch equations, coherent control of populations and current in semiconductors, exciton-continuum interac tions, and many diverse aspects of coherent spectroscopy including studies of microcavities, Bragg structures, quantum dots and quantum wires.
Band Structure Engineering In Semiconductor Microstructures
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Author : R.A. Abram
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Band Structure Engineering In Semiconductor Microstructures written by R.A. Abram and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Science categories.
This volume contains the proceedings of the NATO Advanced Research Workshop on Band Structure Engineering in Semiconductor Microstructures held at Il Ciocco, Castelvecchio Pascali in Tuscany between 10th and 15th April 1988. Research on semiconductor microstructures has expanded rapidly in recent years as a result of developments in the semiconductor growth and device fabrication technologies. The emergence of new semiconductor structures has facilitated a number of approaches to producing systems with certain features in their electronic structure which can lead to useful or interesting properties. The interest in band structure engineering has stimd ated a variety of physical investigations and nove 1 device concepts and the field now exhibits a fascinating interplay betwepn pure physics and device technology. Devices based on microstruc tures are useful vehicles for fundamental studies but also new device ideas require a thorough understanding of the basic physics. Around forty researchers gathered at I1 Ciocco in the Spring of 1988 to discuss band structure engineering in semiconductor microstructures.
Rf And Microwave Semiconductor Device Handbook
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Author : Mike Golio
language : en
Publisher: CRC Press
Release Date : 2017-12-19
Rf And Microwave Semiconductor Device Handbook written by Mike Golio and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-12-19 with Technology & Engineering categories.
Offering a single volume reference for high frequency semiconductor devices, this handbook covers basic material characteristics, system level concerns and constraints, simulation and modeling of devices, and packaging. Individual chapters detail the properties and characteristics of each semiconductor device type, including: Varactors, Schottky diodes, transit-time devices, BJTs, HBTs, MOSFETs, MESFETs, and HEMTs. Written by leading researchers in the field, the RF and Microwave Semiconductor Device Handbook provides an excellent starting point for programs involving development, technology comparison, or acquisition of RF and wireless semiconductor devices.
The Physics And Fabrication Of Microstructures And Microdevices
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Author : Michael J. Kelly
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
The Physics And Fabrication Of Microstructures And Microdevices written by Michael J. Kelly and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Technology & Engineering categories.
les Houches This Winter School on "The Physics and Fabrication of Microstructures" originated with a European industrial decision to investigate in some detail the potential of custom-designed microstructures for new devices. Beginning in 1985, GEC and THOMSON started a collaboration on these subjects, supported by an ESPRIT grant from the Commission of the European Com munity. To the outside observer of the whole field, it appears clear that the world effort is very largely based in the United States and Japan. It also appears that cooperation and dissemination of results are very well organised outside Europe and act as a major influence on the development of new concepts and devices. In Japan, a main research programme of the Research and Development for Basic Technology for Future Industries is focused on "Future Electron Devices". In Japan and in the United States, many workshops are organised annually in order to bring together the major specialists in industry and academia, allowing fast dissemination of advances and contacts for setting up cooperative efforts.
Semiconductor Characterization
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Author : W. Murray Bullis
language : en
Publisher: American Institute of Physics
Release Date : 1996
Semiconductor Characterization written by W. Murray Bullis and has been published by American Institute of Physics this book supported file pdf, txt, epub, kindle and other format this book has been release on 1996 with Science categories.
Market: Those in government, industry, and academia interested in state-of-the-art knowledge on semiconductor characterization for research, development, and manufacturing. Based on papers given at an International Nist Workshop in January 1995, Semiconductor Characterization covers the unique characterization requirements of both silicon IC development and manufacturing, and compound semiconductor materials, devices, and manufacturing. Additional sections discuss technology trends and future requirements for compound semiconductor applications. Also highlighted are recent developments in characterization, including in- situ, in-FAB, and off-line analysis methods. The book provides a concise, effective portrayal of industry needs and problems in the important specialty of metrology for semiconductor technology.