Semiconductor Interfaces Microstructures And Devices

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Semiconductor Interfaces Microstructures And Devices

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Author : Zhe Chuan Feng
language : en
Publisher: CRC Press
Release Date : 1993-01-01

Semiconductor Interfaces Microstructures And Devices written by Zhe Chuan Feng and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1993-01-01 with Science categories.

A semiconductor interface is the contact between the semiconductor itself and a metal. The interface is a site of change, and it is imperative to ensure that the semiconducting material is sealed at this point to maintain its reliability. This book examines various aspects of interfaces, showing how they can affect microstructures and devices such as infrared photodetectors (as used in nightsights) and blue diode lasers. It presents various techniques for examining different types of semiconductor material and suggests future potential commercial applications for different semiconductor devices. Written by experts in their fields and focusing on metallic semiconductors (Cadmium Telluride and related compounds), this comprehensive overview of recent developments is an essential reference for those working in the semiconductor industry and provides a concise and comprehensive introduction to those new to the field.

Semiconductor Interfaces And Microstructures

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Author : Zhe Chuan Feng
language : en
Publisher: World Scientific
Release Date : 1992-08-31

Semiconductor Interfaces And Microstructures written by Zhe Chuan Feng and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 1992-08-31 with Science categories.

Recently there have been major achievements in the study of semiconductor interfaces and microstructures for different materials and structural systems. Progress has been made through various experimental technologies and theoretical methods. This book provides an up-to-date review on these advances and includes the following major subjects: IV-IV, III-V and II-VI semiconductors and metal/semiconductor structures; new developments in growth methods; electric, optical, magnetic and structural characterization and properties; relative theories — electronic transport, phonos and interface modes; devices and applications. These materials are organized into four sections: General, III-V, II-VI and IV-IV, which offer comprehensive information and help readers in following the new developments in the research frontiers of the above fields. Contents:Carrier Transport in Artificially Structured Two-Dimensional Semiconductor Systems (W Walukiewicz)Miniband Conduction in Semiconductor Superlattices (A Sibille et al.)Barrier Width Dependence of Optical Properties in Semiconductor Superlattices (J J Song et al.)Radiative Processes in GaAs/AIGaAs Heterostructures (P O Holtz et al.)Type-I-Type-II Transition in GaAs/AIAs Superlattices (G H Li)Photoluminescene Studies of Interface Roughness in GaAs/AIAs Quantum Well Structures (D Gammon et al.)Optical and Magneto-Optical Properties of Narrow InxGa1-xAs-GaAs Quantum Wells (D C Reynolds & K R Evans)Growth and Studies of Antimony Based III-V Compounds by Magnetron Sputter Epitaxy Using Metalorganic and Solid Elemental Sources (J B Webb & R Rousina)Properties of Cd1-xMnxTe Films and Cd1-xMnxTe-CdTe Superlattices Grown by Pulsed Laser Evaporation and Epitaxy (J M Wrobel & J J Dubowski)Zn1-yCdySe1-xTex Quatenary II-VI Wide Bandgap Alloys and Heterostructures (R E Nahory et al.)Intersubband Transitions in SiGe/Si Quantum Structures (R P G Karunasiri et al.)High-Temperature Discrete Devices in 6H-SiC: Sublimation Epitaxial Growth, Device Technology and Electrical Performance (M M Anikin et al.) Readership: Scientists, engineers and graduate students. keywords:

Epitaxial Microstructures

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Author :
language : en
Publisher: Academic Press
Release Date : 1994-09-15

Epitaxial Microstructures written by and has been published by Academic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 1994-09-15 with Technology & Engineering categories.

Newly developed semiconductor microstructures can now guide light and electrons resulting in important consequences for state-of-the-art electronic and photonic devices. This volume introduces a new generation of epitaxial microstructures. Special emphasis has been given to atomic control during growth and the interrelationship between the atomic arrangements and the properties of the structures. Atomic-level control of semiconductor microstructures Molecular beam epitaxy, metal-organic chemical vapor deposition Quantum wells and quantum wires Lasers, photon(IR)detectors, heterostructure transistors

Metal Semiconductor Contacts And Devices

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Author : Simon S. Cohen
language : en
Publisher: Academic Press
Release Date : 2014-12-01

Metal Semiconductor Contacts And Devices written by Simon S. Cohen and has been published by Academic Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-12-01 with Technology & Engineering categories.

VLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in digital integrated circuits. The emphasis is placed on the interplay among the theory, processing, and characterization techniques in the development of practical metal-semiconductor contacts and devices. This volume contains chapters that are devoted to the discussion of the physics of metal-semiconductor interfaces and its basic phenomena; fabrication procedures; and interface characterization techniques, particularly, ohmic contacts. Contacts that involve polycrystalline silicon; applications of the metal-semiconductor barriers in MOS, bipolar, and MESFET digital integrated circuits; and methods for measuring the barrier height are covered as well. Process engineers, device physicists, circuit designers, and students of this discipline will find the book very useful.

Electronic Properties Of Semiconductor Interfaces

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Author : Winfried Mönch
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-04-17

Electronic Properties Of Semiconductor Interfaces written by Winfried Mönch and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-04-17 with Technology & Engineering categories.

Using the continuum of interface-induced gap states (IFIGS) as a unifying theme, Mönch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling?s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively.

The Physics Of Submicron Semiconductor Devices

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Author : Harold L. Grubin
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-11-11

The Physics Of Submicron Semiconductor Devices written by Harold L. Grubin and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-11-11 with Technology & Engineering categories.

The papers contained in the volume represent lectures delivered as a 1983 NATO ASI, held at Urbino, Italy. The lecture series was designed to identify the key submicron and ultrasubmicron device physics, transport, materials and contact issues. Nonequilibrium transport, quantum transport, interfacial and size constraints issues were also highlighted. The ASI was supported by NATO and the European Research Office. H. L. Grubin D. K. Ferry C. Jacoboni v CONTENTS MODELLING OF SUB-MICRON DEVICES.................. .......... 1 E. Constant BOLTZMANN TRANSPORT EQUATION... ... ...... .................... 33 K. Hess TRANSPORT AND MATERIAL CONSIDERATIONS FOR SUBMICRON DEVICES. . .. . . . . .. . . . .. . .. . .... ... .. . . . .. . . . .. . . . . . . . . . . 45 H. L. Grubin EPITAXIAL GROWTH FOR SUB MICRON STRUCTURES.................. 179 C. E. C. Wood INSULATOR/SEMICONDUCTOR INTERFACES.......................... 195 C. W. Wilms en THEORY OF THE ELECTRONIC STRUCTURE OF SEMICONDUCTOR SURFACES AND INTERFACES......................................... 223 C. Calandra DEEP LEVELS AT COMPOUND-SEMICONDUCTOR INTERFACES........... 253 W. Monch ENSEMBLE MONTE CARLO TECHNIqUES............................. 289 C. Jacoboni NOISE AND DIFFUSION IN SUBMICRON STRUCTURES................. 323 L. Reggiani SUPERLATTICES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 361 . . . . . . . . . . . . K. Hess SUBMICRON LITHOGRAPHY 373 C. D. W. Wilkinson and S. P. Beaumont QUANTUM EFFECTS IN DEVICE STRUCTURES DUE TO SUBMICRON CONFINEMENT IN ONE DIMENSION.... ....................... 401 B. D. McCombe vii viii CONTENTS PHYSICS OF HETEROSTRUCTURES AND HETEROSTRUCTURE DEVICES..... 445 P. J. Price CORRELATION EFFECTS IN SHORT TIME, NONS TAT I ONARY TRANSPORT. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 477 . . . . . . . . . . . . J. J. Niez DEVICE-DEVICE INTERACTIONS............ ...................... 503 D. K. Ferry QUANTUM TRANSPORT AND THE WIGNER FUNCTION................... 521 G. J. Iafrate FAR INFRARED MEASUREMENTS OF VELOCITY OVERSHOOT AND HOT ELECTRON DYNAMICS IN SEMICONDUCTOR DEVICES............. 577 S. J. Allen, Jr.

Band Structure Engineering In Semiconductor Microstructures

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Author : R.A. Abram
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06

Band Structure Engineering In Semiconductor Microstructures written by R.A. Abram and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Science categories.

This volume contains the proceedings of the NATO Advanced Research Workshop on Band Structure Engineering in Semiconductor Microstructures held at Il Ciocco, Castelvecchio Pascali in Tuscany between 10th and 15th April 1988. Research on semiconductor microstructures has expanded rapidly in recent years as a result of developments in the semiconductor growth and device fabrication technologies. The emergence of new semiconductor structures has facilitated a number of approaches to producing systems with certain features in their electronic structure which can lead to useful or interesting properties. The interest in band structure engineering has stimd ated a variety of physical investigations and nove 1 device concepts and the field now exhibits a fascinating interplay betwepn pure physics and device technology. Devices based on microstruc tures are useful vehicles for fundamental studies but also new device ideas require a thorough understanding of the basic physics. Around forty researchers gathered at I1 Ciocco in the Spring of 1988 to discuss band structure engineering in semiconductor microstructures.

Rf And Microwave Semiconductor Device Handbook

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Author : Mike Golio
language : en
Publisher: CRC Press
Release Date : 2017-12-19

Rf And Microwave Semiconductor Device Handbook written by Mike Golio and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-12-19 with Technology & Engineering categories.

Offering a single volume reference for high frequency semiconductor devices, this handbook covers basic material characteristics, system level concerns and constraints, simulation and modeling of devices, and packaging. Individual chapters detail the properties and characteristics of each semiconductor device type, including: Varactors, Schottky diodes, transit-time devices, BJTs, HBTs, MOSFETs, MESFETs, and HEMTs. Written by leading researchers in the field, the RF and Microwave Semiconductor Device Handbook provides an excellent starting point for programs involving development, technology comparison, or acquisition of RF and wireless semiconductor devices.

Heteroepitaxy Of Semiconductors

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Author : John E. Ayers
language : en
Publisher: CRC Press
Release Date : 2016-10-03

Heteroepitaxy Of Semiconductors written by John E. Ayers and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-10-03 with Technology & Engineering categories.

In the past ten years, heteroepitaxy has continued to increase in importance with the explosive growth of the electronics industry and the development of a myriad of heteroepitaxial devices for solid state lighting, green energy, displays, communications, and digital computing. Our ever-growing understanding of the basic physics and chemistry underlying heteroepitaxy, especially lattice relaxation and dislocation dynamic, has enabled an ever-increasing emphasis on metamorphic devices. To reflect this focus, two all-new chapters have been included in this new edition. One chapter addresses metamorphic buffer layers, and the other covers metamorphic devices. The remaining seven chapters have been revised extensively with new material on crystal symmetry and relationships, III-nitride materials, lattice relaxation physics and models, in-situ characterization, and reciprocal space maps.

Vlsi Technology

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Author : Wai-Kai Chen
language : en
Publisher: CRC Press
Release Date : 2003-03-19

Vlsi Technology written by Wai-Kai Chen and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003-03-19 with Technology & Engineering categories.

As their name implies, VLSI systems involve the integration of various component systems. While all of these components systems are rooted in semiconductor manufacturing, they involve a broad range of technologies. This volume of the Principles and Applications of Engineering series examines the technologies associated with VLSI systems, including