Semiconductor Power Devices
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Semiconductor Power Devices
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Author : Josef Lutz
language : en
Publisher: Springer Science & Business Media
Release Date : 2011-01-15
Semiconductor Power Devices written by Josef Lutz and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011-01-15 with Technology & Engineering categories.
Semiconductor power devices are the heart of power electronics. They determine the performance of power converters and allow topologies with high efficiency. Semiconductor properties, pn-junctions and the physical phenomena for understanding power devices are discussed in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. In practice, not only the semiconductor, but also the thermal and mechanical properties of packaging and interconnection technologies are essential to predict device behavior in circuits. Wear and aging mechanisms are identified and reliability analyses principles are developed. Unique information on destructive mechanisms, including typical failure pictures, allows assessment of the ruggedness of power devices. Also parasitic effects, such as device induced electromagnetic interference problems, are addressed. The book concludes with modern power electronic system integration techniques and trends.
Semiconductor Power Devices
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Author : Josef Lutz
language : en
Publisher:
Release Date : 2011-03-30
Semiconductor Power Devices written by Josef Lutz and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011-03-30 with categories.
Power Microelectronics Device And Process Technologies Second Edition
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Author : Yung Chii Liang
language : en
Publisher: World Scientific
Release Date : 2017-03-14
Power Microelectronics Device And Process Technologies Second Edition written by Yung Chii Liang and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-03-14 with Technology & Engineering categories.
'This is an excellent reference book for graduates or undergraduates studying semiconductor technology, or for working professionals who need a reference for detailed theory and working knowledge of processes in the field of power semiconductor devices.'IEEE Electrical Insulation MagazineThis descriptive textbook provides a clear look at the theories and process technologies necessary for understanding the modern power semiconductor devices, i.e. from the fundamentals of p-n junction electrostatics, unipolar MOSFET and superjunction structures, bipolar IGBT, to the most recent wide bandgap SiC and GaN devices. It also covers their associated semiconductor process technologies. Real examples based on actual fabricated devices, with the process steps described in clear detail are especially useful. This book is suitable for university courses on power semiconductor or power electronic devices. Device designers and researchers will also find this book a good reference in their work, especially for those focusing on the advanced device development and design aspects.
Fundamentals Of Power Semiconductor Devices
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Author : B. Jayant Baliga
language : en
Publisher: Springer Science & Business Media
Release Date : 2010-04-02
Fundamentals Of Power Semiconductor Devices written by B. Jayant Baliga and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010-04-02 with Technology & Engineering categories.
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment here focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. The book will appeal to practicing engineers in the power semiconductor device community.
Silicon Carbide Power Devices
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Author : B. Jayant Baliga
language : en
Publisher: World Scientific
Release Date : 2005
Silicon Carbide Power Devices written by B. Jayant Baliga and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005 with Technology & Engineering categories.
Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures. It uses the results of extensive numerical simulations to elucidate the operating principles of these important devices. Sample Chapter(s). Chapter 1: Introduction (72 KB). Contents: Material Properties and Technology; Breakdown Voltage; PiN Rectifiers; Schottky Rectifiers; Shielded Schottky Rectifiers; Metal-Semiconductor Field Effect Transistors; The Baliga-Pair Configuration; Planar Power MOSFETs; Shielded Planar MOSFETs; Trench-Gate Power MOSFETs; Shielded Trendch-Gate MOSFETs; Charge Coupled Structures; Integral Diodes; Lateral High Voltage FETs; Synopsis. Readership: For practising engineers working on power devices, and as a supplementary textbook for a graduate level course on power devices.
Power Semiconductor Devices And Circuits
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Author : A.A. Jaecklin
language : en
Publisher: Springer Science & Business Media
Release Date : 2012-12-06
Power Semiconductor Devices And Circuits written by A.A. Jaecklin and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-12-06 with Science categories.
This symposium was the sCientific-technical event of the centennial celebration of the Asea Brown Boveri Switzerland. The purpose was to assess the present state of the art as well as shaping the basis for future progress in the area of power devices and related power circuits. The merger of Brown Boveri (BBC) with Asea to Asea Brown Boveri (ABB) three years ago gave new stimulus and enriched the technical substance of the symposium. By 1991, 100 years after the formation of BBC in Switzerland as a single company, this organization has been decentralized, forming 35 independent ABB companies. One of them - ABB Semiconductors Ltd. - directly deals with the power semiconductor business. These significant changes reflect the changes in the market place: increased competition and higher customer expectations have to be fulfilled. In line with the core business activities of ABB and with the concept of sustainable development, it is natural for ABB to be active in the area of power devices and circuits. Increased awareness towards energy conservation is one of the main drives for these activities. User friendliness is another drive: integration of intelligent functions, e.g. protection and/or increased direct computer interfacing of the power circuits. Therefore, also the R&D activities related to the subject of thIs symposium will in the future be characterized by an even stronger coupling with the market needs. For the members of the R&D Laboratories this means improved customer partnership beyond operational excellence.
Integrated Power Devices And Tcad Simulation
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Author : Yue Fu
language : en
Publisher: CRC Press
Release Date : 2017-12-19
Integrated Power Devices And Tcad Simulation written by Yue Fu and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2017-12-19 with Technology & Engineering categories.
From power electronics to power integrated circuits (PICs), smart power technologies, devices, and beyond, Integrated Power Devices and TCAD Simulation provides a complete picture of the power management and semiconductor industry. An essential reference for power device engineering students and professionals, the book not only describes the physics inside integrated power semiconductor devices such lateral double-diffused metal oxide semiconductor field-effect transistors (LDMOSFETs), lateral insulated-gate bipolar transistors (LIGBTs), and super junction LDMOSFETs but also delivers a simple introduction to power management systems. Instead of abstract theoretical treatments and daunting equations, the text uses technology computer-aided design (TCAD) simulation examples to explain the design of integrated power semiconductor devices. It also explores next generation power devices such as gallium nitride power high electron mobility transistors (GaN power HEMTs). Including a virtual process flow for smart PIC technology as well as a hard-to-find technology development organization chart, Integrated Power Devices and TCAD Simulation gives students and junior engineers a head start in the field of power semiconductor devices while helping to fill the gap between power device engineering and power management systems.
Wide Bandgap Semiconductor Power Devices
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Author : B. Jayant Baliga
language : en
Publisher: Woodhead Publishing
Release Date : 2018-10-17
Wide Bandgap Semiconductor Power Devices written by B. Jayant Baliga and has been published by Woodhead Publishing this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-10-17 with Technology & Engineering categories.
Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed. Comprehensively covers power electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications Addresses the key challenges towards the realization of wide bandgap power electronic devices, including materials defects, performance and reliability Provides the benefits of wide bandgap semiconductors, including opportunities for cost reduction and social impact
Semiconductor Power Devices
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Author : Sorab Khushro Ghandhi
language : en
Publisher: John Wiley & Sons
Release Date : 1977
Semiconductor Power Devices written by Sorab Khushro Ghandhi and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 1977 with Technology & Engineering categories.
Discrete And Integrated Power Semiconductor Devices
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Author : Vítezslav Benda
language : en
Publisher: John Wiley & Sons
Release Date : 1999-01-26
Discrete And Integrated Power Semiconductor Devices written by Vítezslav Benda and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 1999-01-26 with Technology & Engineering categories.
Dieses Buch beschreibt in leicht verständlicher Weise Aufbau, Funktion, Eigenschaften und Anwendungsmöglichkeiten wichtiger Halbleiter-Bauelemente - von Leistungsdioden über Thyristoren und MOSFETs bis hin zu integrierten Systemen. Die Autoren verzichten dabei auf komplizierte Mathematik; sie stützen sich vielmehr auf grundlegende physikalische Modelle. (11/98)