Silicon Carbide Materials Processing And Devices
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Silicon Carbide
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Author : Chuan Feng Zhe
language : en
Publisher: CRC Press
Release Date : 2003-10-30
Silicon Carbide written by Chuan Feng Zhe and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003-10-30 with Technology & Engineering categories.
This book will provide useful information to material growers and evaluators, device design and processing engineers as well as potential users of SiC technologies. This book will help identify remaining challenging issues to stimulate further investigation to realize the full potential of wide band gap SiC for optoelectronic and microelectronic applications.
Silicon Carbide
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Author : Zhe Chuan Feng
language : en
Publisher:
Release Date : 2004
Silicon Carbide written by Zhe Chuan Feng and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004 with Silicon carbide categories.
Silicon Carbide
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Author : Moumita Mukherjee
language : en
Publisher: IntechOpen
Release Date : 2011-10-10
Silicon Carbide written by Moumita Mukherjee and has been published by IntechOpen this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011-10-10 with Technology & Engineering categories.
Silicon Carbide (SiC) and its polytypes, used primarily for grinding and high temperature ceramics, have been a part of human civilization for a long time. The inherent ability of SiC devices to operate with higher efficiency and lower environmental footprint than silicon-based devices at high temperatures and under high voltages pushes SiC on the verge of becoming the material of choice for high power electronics and optoelectronics. What is more important, SiC is emerging to become a template for graphene fabrication, and a material for the next generation of sub-32nm semiconductor devices. It is thus increasingly clear that SiC electronic systems will dominate the new energy and transport technologies of the 21st century. In 21 chapters of the book, special emphasis has been placed on the materials aspects and developments thereof. To that end, about 70% of the book addresses the theory, crystal growth, defects, surface and interface properties, characterization, and processing issues pertaining to SiC. The remaining 30% of the book covers the electronic device aspects of this material. Overall, this book will be valuable as a reference for SiC researchers for a few years to come. This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. The primary target for the book includes students, researchers, material and chemical engineers, semiconductor manufacturers and professionals who are interested in silicon carbide and its continuing progression.
Silicon Carbide
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Author : Wolfgang J. Choyke
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-04-17
Silicon Carbide written by Wolfgang J. Choyke and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-04-17 with Technology & Engineering categories.
Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC. The book is divided into five main categories: theory, crystal growth, characterization, processing and devices. Every attempt has been made to make the articles as up-to-date as possible and assure the highest standards of accuracy. As was the case for earlier SiC books, many of the articles will be relevant a decade from now so that this book will take its place next to the earlier work as a permanent and essential reference volume.
Silicon Carbide Materials Processing And Devices
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Author :
language : en
Publisher:
Release Date : 2002
Silicon Carbide Materials Processing And Devices written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002 with Semiconductors categories.
Silicon Carbide 2008 Materials Processing And Devices
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Author : Michael Dudley
language : en
Publisher:
Release Date : 2008
Silicon Carbide 2008 Materials Processing And Devices written by Michael Dudley and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008 with Crystal growth categories.
Sic Materials And Devices
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Author : Michael Shur
language : en
Publisher: World Scientific
Release Date : 2006
Sic Materials And Devices written by Michael Shur and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2006 with Technology & Engineering categories.
After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices OCo power switching Schottky diodes and high temperature MESFETs OCo are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology. Contents: SiC Material Properties (G Pensl et al.); SiC Homoepitaxy and Heteroepitaxy (A S Bakin); Ohmic Contacts to SiC (F Roccaforte et al.); Silicon Carbide Schottky Barrier Diode (J H Zhao et al.); High Power SiC PiN Rectifiers (R Singh); Silicon Carbide Diodes for Microwave Applications (K Vassilevski); SiC Thyristors (M E Levinshtein et al.); Silicon Carbide Static Induction Transistors (G C DeSalvo). Readership: Technologists, scientists, engineers and graduate students working on silicon carbide or other wide band gap materials and devices."
Sic Power Materials
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Author : Zhe Chuan Feng
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-03-14
Sic Power Materials written by Zhe Chuan Feng and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-03-14 with Technology & Engineering categories.
In the 1950s Shockley predicted that SiC would quickly replace Si as a result of its superior material properties. In many ways he was right and today there is an active industry based on SiC, with new achievements being reported every year. This book reviews the progress achieved in SiC research and development, particularly over the past 10 years. It presents the essential properties of 3C-, 6H- and 4H-SiC polytypes including structural, electrical, optical, surface and interface properties; describes existing key SiC devices and also the challenges in materials growth and device fabrication of the 21st century. Overall it provides an up-to-date reference book suitable for a broad audience of newcomers, graduate students and engineers in industrial R&D.
Handbook Of Silicon Carbide Materials And Devices
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Author : Zhe Chuan Feng
language : en
Publisher: CRC Press
Release Date : 2023-05-31
Handbook Of Silicon Carbide Materials And Devices written by Zhe Chuan Feng and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2023-05-31 with Science categories.
This handbook presents the key properties of silicon carbide (SiC), the power semiconductor for the 21st century. It describes related technologies, reports the rapid developments and achievements in recent years, and discusses the remaining challenging issues in the field. The book consists of 15 chapters, beginning with a chapter by Professor W. J. Choyke, the leading authority in the field, and is divided into four sections. The topics include presolar SiC history, vapor-liquid-solid growth, spectroscopic investigations of 3C-SiC/Si, developments and challenges in the 21st century; CVD principles and techniques, homoepitaxy of 4H-SiC, cubic SiC grown on 4H-SiC, SiC thermal oxidation processes and MOS interface, Raman scattering, NIR luminescent studies, Mueller matrix ellipsometry, Raman microscopy and imaging, 4H-SiC UV photodiodes, radiation detectors, and short wavelength and synchrotron X-ray diffraction. This comprehensive work provides a strong contribution to the engineering, materials, and basic science knowledge of the 21st century, and will be of interest to material growers, designers, engineers, scientists, postgraduate students, and entrepreneurs.
Symposium K Silicon Carbide Materials Processing And Devices
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Author :
language : en
Publisher:
Release Date : 2002
Symposium K Silicon Carbide Materials Processing And Devices written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002 with categories.
Symposium K is the second in a series of SiC symposia at the MRS Fall Meeting. Since the last meeting in 2000, advances in SiC materials, processing, and device design have resulted in implementation of SiC-based electronic systems and offer great promise in high voltage, high temperature, high frequency applications. Presenters focused on new developments in the basic science of SiC materials as well as rapidly maturing device technologies. The challenges in this field include understanding and decreasing defect densities in bulk SiC crystals, controlling morphology and residual impurities in epilayers, optimization of implant activation and oxide-SiC interfaces, and developing novel device structures. Topics of particular interest were in the area of bulk SiC growth (including large-diameter crystals), modeling, characterization, homo- and heteroepitaxial growth (e.g., doping control, morphology development, and carrier lifetimes), advances in ion implantation, improved ohmic and rectifying contacts, surfaces and interfaces, oxidation, and alternative dielectric materials and devices (including high-voltage, high-temperature, high-frequency sensors and system level benefits).