Silicon Carbide 2008 Materials Processing And Devices
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Silicon Carbide 2008 Materials Processing And Devices
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Author : Michael Dudley
language : en
Publisher:
Release Date : 2008
Silicon Carbide 2008 Materials Processing And Devices written by Michael Dudley and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008 with Crystal growth categories.
Silicon Carbide 2008 Materials Processing And Devices
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Author : Michael Dudley
language : en
Publisher: Cambridge University Press
Release Date : 2014-06-05
Silicon Carbide 2008 Materials Processing And Devices written by Michael Dudley and has been published by Cambridge University Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-06-05 with Technology & Engineering categories.
Silicon carbide (SiC) is a robust semiconductor material being actively developed for high-power and high-temperature applications, especially in the field of power electronics and sensors for harsh environments. This book, the fifth in a continuing series, focuses on SiC growth, defects, and devices. New developments in the growth of bulk SiC single-crystal materials, advances in the epitaxial growth of SiC, and progress in the characterization of materials properties and defects in SiC are featured. The volume also highlights the development of devices manufactured on this wide-bandgap semiconductor including: innovative device designs; characterization of device and materials properties; and improvements in wide-bandgap processing technology.
Silicon Carbide Materials Processing And Devices
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Author :
language : en
Publisher:
Release Date : 2002
Silicon Carbide Materials Processing And Devices written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2002 with Semiconductors categories.
Fundamentals Of Silicon Carbide Technology
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Author : Tsunenobu Kimoto
language : en
Publisher: John Wiley & Sons
Release Date : 2014-09-23
Fundamentals Of Silicon Carbide Technology written by Tsunenobu Kimoto and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-09-23 with Technology & Engineering categories.
A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
Silicon Carbide
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Author : Moumita Mukherjee
language : en
Publisher: BoD – Books on Demand
Release Date : 2011-10-10
Silicon Carbide written by Moumita Mukherjee and has been published by BoD – Books on Demand this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011-10-10 with Technology & Engineering categories.
Silicon Carbide (SiC) and its polytypes, used primarily for grinding and high temperature ceramics, have been a part of human civilization for a long time. The inherent ability of SiC devices to operate with higher efficiency and lower environmental footprint than silicon-based devices at high temperatures and under high voltages pushes SiC on the verge of becoming the material of choice for high power electronics and optoelectronics. What is more important, SiC is emerging to become a template for graphene fabrication, and a material for the next generation of sub-32nm semiconductor devices. It is thus increasingly clear that SiC electronic systems will dominate the new energy and transport technologies of the 21st century. In 21 chapters of the book, special emphasis has been placed on the materials aspects and developments thereof. To that end, about 70% of the book addresses the theory, crystal growth, defects, surface and interface properties, characterization, and processing issues pertaining to SiC. The remaining 30% of the book covers the electronic device aspects of this material. Overall, this book will be valuable as a reference for SiC researchers for a few years to come. This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. The primary target for the book includes students, researchers, material and chemical engineers, semiconductor manufacturers and professionals who are interested in silicon carbide and its continuing progression.
Silicon Carbide Volume 2
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Author : Peter Friedrichs
language : en
Publisher: John Wiley & Sons
Release Date : 2011-04-08
Silicon Carbide Volume 2 written by Peter Friedrichs and has been published by John Wiley & Sons this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011-04-08 with Science categories.
Silicon Carbide - this easy to manufacture compound of silicon and carbon is said to be THE emerging material for applications in electronics. High thermal conductivity, high electric field breakdown strength and high maximum current density make it most promising for high-powered semiconductor devices. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles. This volume is devoted to high power devices products and their challenges in industrial application. Readers will benefit from reports on development and reliability aspects of Schottky barrier diodes, advantages of SiC power MOSFETs, or SiC sensors. The authors discuss MEMS and NEMS as SiC-based electronics for automotive industry as well as SiC-based circuit elements for high temperature applications, and the application of transistors in PV-inverters. The list of contributors reads like a "Who's Who" of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development. Among the former are CREE Inc. and Fraunhofer ISE, while the industry is represented by Toshiba, Nissan, Infineon, NASA, Naval Research Lab, and Rensselaer Polytechnic Institute, to name but a few.
Gallium Nitride And Silicon Carbide Power Technologies
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Author : K. Shenai
language : en
Publisher: The Electrochemical Society
Release Date : 2011
Gallium Nitride And Silicon Carbide Power Technologies written by K. Shenai and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011 with categories.
Handbook Of Silicon Carbide Materials And Devices
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Author : Zhe Chuan Feng
language : en
Publisher: CRC Press
Release Date : 2023-05-31
Handbook Of Silicon Carbide Materials And Devices written by Zhe Chuan Feng and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2023-05-31 with Science categories.
This handbook presents the key properties of silicon carbide (SiC), the power semiconductor for the 21st century. It describes related technologies, reports the rapid developments and achievements in recent years, and discusses the remaining challenging issues in the field. The book consists of 15 chapters, beginning with a chapter by Professor W. J. Choyke, the leading authority in the field, and is divided into four sections. The topics include presolar SiC history, vapor-liquid-solid growth, spectroscopic investigations of 3C-SiC/Si, developments and challenges in the 21st century; CVD principles and techniques, homoepitaxy of 4H-SiC, cubic SiC grown on 4H-SiC, SiC thermal oxidation processes and MOS interface, Raman scattering, NIR luminescent studies, Mueller matrix ellipsometry, Raman microscopy and imaging, 4H-SiC UV photodiodes, radiation detectors, and short wavelength and synchrotron X-ray diffraction. This comprehensive work provides a strong contribution to the engineering, materials, and basic science knowledge of the 21st century, and will be of interest to material growers, designers, engineers, scientists, postgraduate students, and entrepreneurs.
Physics And Technology Of Silicon Carbide Devices
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Author : Yasuto Hijikata
language : en
Publisher: BoD – Books on Demand
Release Date : 2012-10-16
Physics And Technology Of Silicon Carbide Devices written by Yasuto Hijikata and has been published by BoD – Books on Demand this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012-10-16 with Science categories.
Recently, some SiC power devices such as Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effect-transistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. However, to stably supply them and reduce their cost, further improvements for material characterizations and those for device processing are still necessary. This book abundantly describes recent technologies on manufacturing, processing, characterization, modeling, and so on for SiC devices. In particular, for explanation of technologies, I was always careful to argue physics underlying the technologies as much as possible. If this book could be a little helpful to progress of SiC devices, it will be my unexpected happiness.
Doping Engineering For Front End Processing Volume 1070
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Author : Materials Research Society. Meeting Symposium E.
language : en
Publisher:
Release Date : 2008-10-17
Doping Engineering For Front End Processing Volume 1070 written by Materials Research Society. Meeting Symposium E. and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008-10-17 with Technology & Engineering categories.
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.