Silicon Nanowire Field Effect Transistors
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Development Of Silicon Nanowire Field Effect Transistors
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Author : Prathyusha Nukala
language : en
Publisher:
Release Date : 2011
Development Of Silicon Nanowire Field Effect Transistors written by Prathyusha Nukala and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011 with Nanosilicon categories.
Nanowire Transistors
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Author : Jean-Pierre Colinge
language : en
Publisher: Cambridge University Press
Release Date : 2016-04-21
Nanowire Transistors written by Jean-Pierre Colinge and has been published by Cambridge University Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2016-04-21 with Science categories.
A self-contained and up-to-date account of the current developments in the physics and technology of nanowire semiconductor devices.
Nanowire Field Effect Transistors Principles And Applications
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Author : Dae Mann Kim
language : en
Publisher: Springer Science & Business Media
Release Date : 2013-10-23
Nanowire Field Effect Transistors Principles And Applications written by Dae Mann Kim and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2013-10-23 with Technology & Engineering categories.
“Nanowire Field Effect Transistor: Basic Principles and Applications” places an emphasis on the application aspects of nanowire field effect transistors (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essential element in NWFET and the latter as a general background of the FET. During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOSFETs. Contributors focus on processing, electrostatic discharge (ESD) and application of NWFET. This includes coverage of solar and memory cells, biological and chemical sensors, displays and atomic scale light emitting diodes. Appropriate for scientists and engineers interested in acquiring a working knowledge of NWFET as well as graduate students specializing in this subject.
Silicon Nanowire Field Effect Transistors For Sensing Applications
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Author : Alexey Tarasov
language : en
Publisher:
Release Date : 2012
Silicon Nanowire Field Effect Transistors For Sensing Applications written by Alexey Tarasov and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2012 with categories.
Towards Silicon Nanowire Field Effect Transistors
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Author : Martin Enderlein
language : en
Publisher:
Release Date : 2009*
Towards Silicon Nanowire Field Effect Transistors written by Martin Enderlein and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009* with categories.
Silicon Nanowire Field Effect Transistors
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Author : Oren Shirak
language : en
Publisher:
Release Date : 2008
Silicon Nanowire Field Effect Transistors written by Oren Shirak and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2008 with categories.
Sensing With Silicon Nanowire Field Effect Transistors
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Author : Oren S. Knopfmacher
language : en
Publisher:
Release Date : 2011
Sensing With Silicon Nanowire Field Effect Transistors written by Oren S. Knopfmacher and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011 with categories.
Semiconductor Nanowires
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Author : J Arbiol
language : en
Publisher: Elsevier
Release Date : 2015-03-31
Semiconductor Nanowires written by J Arbiol and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2015-03-31 with Technology & Engineering categories.
Semiconductor nanowires promise to provide the building blocks for a new generation of nanoscale electronic and optoelectronic devices. Semiconductor Nanowires: Materials, Synthesis, Characterization and Applications covers advanced materials for nanowires, the growth and synthesis of semiconductor nanowires—including methods such as solution growth, MOVPE, MBE, and self-organization. Characterizing the properties of semiconductor nanowires is covered in chapters describing studies using TEM, SPM, and Raman scattering. Applications of semiconductor nanowires are discussed in chapters focusing on solar cells, battery electrodes, sensors, optoelectronics and biology. - Explores a selection of advanced materials for semiconductor nanowires - Outlines key techniques for the property assessment and characterization of semiconductor nanowires - Covers a broad range of applications across a number of fields
Proceedings Of The 2nd International Conference On Electronic Engineering And Renewable Energy Systems
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Author : Bekkay Hajji
language : en
Publisher: Springer Nature
Release Date : 2020-08-14
Proceedings Of The 2nd International Conference On Electronic Engineering And Renewable Energy Systems written by Bekkay Hajji and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2020-08-14 with Technology & Engineering categories.
This book includes papers presented at the Second International Conference on Electronic Engineering and Renewable Energy (ICEERE 2020), which focus on the application of artificial intelligence techniques, emerging technology and the Internet of things in electrical and renewable energy systems, including hybrid systems, micro-grids, networking, smart health applications, smart grid, mechatronics and electric vehicles. It particularly focuses on new renewable energy technologies for agricultural and rural areas to promote the development of the Euro-Mediterranean region. Given its scope, the book is of interest to graduate students, researchers and practicing engineers working in the fields of electronic engineering and renewable energy.
A Simulation Study Of Silicon Nanowire Field Effect Transistors Fets
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Author :
language : en
Publisher:
Release Date : 2007
A Simulation Study Of Silicon Nanowire Field Effect Transistors Fets written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007 with categories.
Abstract Silicon planar MOSFETs are approaching their scaling limits. New device designs are being explored to replace the existing planar technology. Among the possible new device designs are Double Gate (DG) FETs, FinFETs, Tri-Gate FETs and Omega- Gate FETs. The Silicon Nanowire Gate All Around (GAA) FET stands out as one of the most promising FET designs due to its maximum gate effect in controlling the short channel effects. Recent developments such as synthesis of highly ordered nanowires and fabrication of nanowires as small as 1nm in diameter have illustrated the progress possible in silicon nanowire technology In this study we have explored the silicon nanowire FET as a possible candidate to replace the currently planar MOSFETs. In this thesis we investigated the silicon nanowire FET device and compared its performance with that of a double gate (DG) FET. The software used for the study assumed quantum-ballistic transport (NanoWire), which was developed at Purdue University. Initially, we presented a comparison of Nanowire FET with DG FET with for devices with same physical parameters. It was seen that superior subthreshold characteristics are exhibited by a silicon nanowire FET. We also conducted an optimization study for the 25 nm node from the ITRS report. The final device was optimized for both High Performance and Low Operating Power applications. A further study on future technology nodes down to the 14 nm node was performed which revealed short channel effects becomes significant at gate lengths ~ 5 nm even for a silicon nanowire device. Finally, a process variation study was conducted in comparison with a FinFET device. It was concluded that a silicon nanowire FET shows less sensitivity to process variation except it has higher sensitivity in variation with the diameter at less than ~4 nm than for FinFET where significant quantum effects set in. Variation with the gate length was found to be much less sensitive for the silicon nanowire FET because of its superior gate control characteristics.