Silicon On Insulator Technology And Devices X

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Silicon On Insulator Technology And Devices X

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Author : Electrochemical Society. Electronics Division
language : en
Publisher: The Electrochemical Society
Release Date : 2001

Silicon On Insulator Technology And Devices X written by Electrochemical Society. Electronics Division and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 2001 with Technology & Engineering categories.

Silicon On Insulator Technology And Devices Xi

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Author : Electrochemical Society. Meeting
language : en
Publisher: The Electrochemical Society
Release Date : 2003

Silicon On Insulator Technology And Devices Xi written by Electrochemical Society. Meeting and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 2003 with Science categories.

Silicon On Insulator Technology And Devices

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Author : Peter L. F. Hemment
language : en
Publisher: The Electrochemical Society
Release Date : 1999

Silicon On Insulator Technology And Devices written by Peter L. F. Hemment and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 1999 with Technology & Engineering categories.

Transient Floating Body Effects For Memory Applications In Fully Depleted Soi Mosfets

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Author : Maryline Bawedin
language : en
Publisher: Presses univ. de Louvain
Release Date : 2007

Transient Floating Body Effects For Memory Applications In Fully Depleted Soi Mosfets written by Maryline Bawedin and has been published by Presses univ. de Louvain this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007 with Science categories.

Memory devices based on floating-body effects (FBE) in Silicon-on-Insulator (SOI) technology are among the most promising candidates for sub-100nm and low power Dynamic Random Access Memory (DRAM). This new type of DRAMs, called Zero-Capacitor RAM (Z-RAM), uses only one transistor in partially-depleted (PD) SOI technology and takes advantage of FBE which have been considered as parasitic phenomena until now. The Z-RAM programming principles are based on the threshold voltage VTH variations induced by the excess or lack of majority carriers in the floating body. In this dissertation, a new floating-body effect, the Transient Floating Body Potential Effect (TFBPE), based on the body majority carriers non-equilibrium and on the dual dynamic gate coupling in standard fully-depleted (FD) SOI MOSFETs is presented for the first time. The TFBPE occurs in a specific gate bias range and can induce strong hysteresis of the gate and drain current characteristics although the FD SOI transistors are usually known to be immune against the FBE and their aftermaths. Adapted from the same physics principles as in the drain current hysteresis, that we called the Meta-Stable Dip (MSD) effect, a new concept of one-transistor capacitor-less memory was also proposed, the Meta-Stable DRAM (MSDRAM) which is dedicated for double-gate operations. All the experimental results and physics interpretations were supported by 2D numerical simulations. A 1D semi-analytical model of the body potential for non-equilibrium states was also proposed. For the first time, this original body-potential model takes into account the majority carriers density variations, i.e., the quasi-Fermi level non-equilibrium versus a transient gate voltage scan in a FD MOS device.

Silicon On Insulator Technology And Devices 14

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Author : Yasuhisa Omura
language : en
Publisher: The Electrochemical Society
Release Date : 2009-05

Silicon On Insulator Technology And Devices 14 written by Yasuhisa Omura and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 2009-05 with Science categories.

This issue of ECS Transactions contains papers on silicon-on-insulator subjects including devices, device physics, modelling, simulations, microelectronics, photonics, nano-technology, integrated circuits, radiation hardness, material characterization, reliability, and sensors

The Vlsi Handbook

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Author : Wai-Kai Chen
language : en
Publisher: CRC Press
Release Date : 2018-10-03

The Vlsi Handbook written by Wai-Kai Chen and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-10-03 with Technology & Engineering categories.

For the new millenium, Wai-Kai Chen introduced a monumental reference for the design, analysis, and prediction of VLSI circuits: The VLSI Handbook. Still a valuable tool for dealing with the most dynamic field in engineering, this second edition includes 13 sections comprising nearly 100 chapters focused on the key concepts, models, and equations. Written by a stellar international panel of expert contributors, this handbook is a reliable, comprehensive resource for real answers to practical problems. It emphasizes fundamental theory underlying professional applications and also reflects key areas of industrial and research focus. WHAT'S IN THE SECOND EDITION? Sections on... Low-power electronics and design VLSI signal processing Chapters on... CMOS fabrication Content-addressable memory Compound semiconductor RF circuits High-speed circuit design principles SiGe HBT technology Bipolar junction transistor amplifiers Performance modeling and analysis using SystemC Design languages, expanded from two chapters to twelve Testing of digital systems Structured for convenient navigation and loaded with practical solutions, The VLSI Handbook, Second Edition remains the first choice for answers to the problems and challenges faced daily in engineering practice.

Silicon On Insulator Technology And Devices Xii

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Author : George K. Celler
language : en
Publisher: The Electrochemical Society
Release Date : 2005

Silicon On Insulator Technology And Devices Xii written by George K. Celler and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 2005 with Technology & Engineering categories.

Silicon On Insulator Soi Technology

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Author : O. Kononchuk
language : en
Publisher: Elsevier
Release Date : 2014-06-19

Silicon On Insulator Soi Technology written by O. Kononchuk and has been published by Elsevier this book supported file pdf, txt, epub, kindle and other format this book has been release on 2014-06-19 with Technology & Engineering categories.

Silicon-On-Insulator (SOI) Technology: Manufacture and Applications covers SOI transistors and circuits, manufacture, and reliability. The book also looks at applications such as memory, power devices, and photonics. The book is divided into two parts; part one covers SOI materials and manufacture, while part two covers SOI devices and applications. The book begins with chapters that introduce techniques for manufacturing SOI wafer technology, the electrical properties of advanced SOI materials, and modeling short-channel SOI semiconductor transistors. Both partially depleted and fully depleted SOI technologies are considered. Chapters 6 and 7 concern junctionless and fin-on-oxide field effect transistors. The challenges of variability and electrostatic discharge in CMOS devices are also addressed. Part two covers recent and established technologies. These include SOI transistors for radio frequency applications, SOI CMOS circuits for ultralow-power applications, and improving device performance by using 3D integration of SOI integrated circuits. Finally, chapters 13 and 14 consider SOI technology for photonic integrated circuits and for micro-electromechanical systems and nano-electromechanical sensors. The extensive coverage provided by Silicon-On-Insulator (SOI) Technology makes the book a central resource for those working in the semiconductor industry, for circuit design engineers, and for academics. It is also important for electrical engineers in the automotive and consumer electronics sectors. - Covers SOI transistors and circuits, as well as manufacturing processes and reliability - Looks at applications such as memory, power devices, and photonics

Radiation Effects And Soft Errors In Integrated Circuits And Electronic Devices

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Author : Ronald Donald Schrimpf
language : en
Publisher: World Scientific
Release Date : 2004

Radiation Effects And Soft Errors In Integrated Circuits And Electronic Devices written by Ronald Donald Schrimpf and has been published by World Scientific this book supported file pdf, txt, epub, kindle and other format this book has been release on 2004 with Technology & Engineering categories.

This book provides a detailed treatment of radiation effects in electronic devices, including effects at the material, device, and circuit levels. The emphasis is on transient effects caused by single ionizing particles (single-event effects and soft errors) and effects produced by the cumulative energy deposited by the radiation (total ionizing dose effects). Bipolar (Si and SiGe), metal-oxide-semiconductor (MOS), and compound semi-conductor technologies are discussed. In addition to considering the specific issues associated with high-performance devices and technologies, the book includes the background material necessary for understanding radiation effects at a more general level.

Nanotechnology For Electronic Materials And Devices

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Author : Anatoli Korkin
language : en
Publisher: Springer Science & Business Media
Release Date : 2010-05-07

Nanotechnology For Electronic Materials And Devices written by Anatoli Korkin and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010-05-07 with Technology & Engineering categories.

The high level of attention and interest of the global community to NANO science and technology to a large extent is linked to the GIGAntic challenges for the c- tinuing growth of information technology, which sparked an unprecedented level of interdisciplinary and international cooperation among industrial and academic researchers, companies, IT market rivals, and countries, including former political and military rivals . Microelectronics technologies have reached a new stage in their development: The latest miniaturization of electronic devices is approaching atomic dimensions, interconnect bottlenecks are limiting circuit speeds, new ma- rials are being introduced into microelectronics manufacture at an unprecedented rate , and alternative technologies to mainstream complementary metal-oxide sem- conductors (CMOSs) are being considered . The very dynamic stage of science and technology related to the advanced and future electronics and photonics creates a growing gap between the large number of rapid publications and nanotechnology highlights in media on one side and fundamental understanding of underlying phenomena and an adequate evaluation of scientific discoveries and technological innovations on the other side. Writing a tutorial book on fundamentals of science and technology for electronics at this time is almost the same level of challenge as writing a history book during a revolution.