Simulation Modeling And Characterization Of Sic Devices
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Simulation Modeling And Characterization Of Sic Devices
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Author : Liangchun Yu
language : en
Publisher:
Release Date : 2010
Simulation Modeling And Characterization Of Sic Devices written by Liangchun Yu and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2010 with Metal oxide semiconductor field-effect transistors categories.
With superior material properties, Silicon carbide (SiC) power devices show great potential for high-power density, high temperature switching applications. Among all the power device structures, SiC MOSFET attracts the most attention because of its high gate input impedance, simple gate control and fast switching speed. However, low inversion channel mobility, high near-interface state density close to the conduction band edge, questionable oxide reliability as well as theoretical limit on the device figure-of-merit still remain to be significant challenges to the development of SiC power MOSFETs. In this dissertation, all of the above challenges are addressed from various approaches. First, simulations on the super-junction structure show that the unipolar theoretical limit of SiC can be broken even with the state-of-the-art processing technologies. An easy-to-implement analytical model is developed for calculations of the blocking voltage, specific on-resistance and charge imbalance effects of 4H-SiC super-junction devices. This model is validated by extensive numerical simulations with a large variety of device parameters. Device design and optimization using this model are also presented. Second, a wafer-level Hall mobility measurement technique is developed to measure channel mobility more accurately, more efficiently and more cost-effectively. Device characterization and development are much more convenient by using this technique. With this method, further explorations of interactions between interface traps and channel carriers as well as device degradation mechanisms become possible. Third, reliability of SiO2 on 4H-SiC is characterized with time dependent dielectric breakdown (TDDB) measurements at various temperatures and electric fields. Lifetime prediction to normal operation conditions suggests that the oxide on SiC has a characteristic lifetime of 10 years at 375° C if the oxide electric field is kept below 4.6 MV/cm. The observed excellent reliability data contradict the widespread belief that the oxide on SiC is intrinsically limited by its physical properties. Detailed discussions are provided to re-examine the arguments leading to the misconception.
Physics And Simulation Of Optoelectronic Devices
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Author :
language : en
Publisher:
Release Date : 1996
Physics And Simulation Of Optoelectronic Devices written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 1996 with Optoelectronic devices categories.
Simulation Of Semiconductor Processes And Devices 2007
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Author : Tibor Grasser
language : en
Publisher: Springer Science & Business Media
Release Date : 2007-11-18
Simulation Of Semiconductor Processes And Devices 2007 written by Tibor Grasser and has been published by Springer Science & Business Media this book supported file pdf, txt, epub, kindle and other format this book has been release on 2007-11-18 with Technology & Engineering categories.
The "Twelfth International Conference on Simulation of Semiconductor Processes and Devices" (SISPAD 2007) continues a long series of conferences and is held in September 2007 at the TU Wien, Vienna, Austria. The conference is the leading forum for Technology Computer-Aided Design (TCAD) held alternatingly in the United States, Japan, and Europe. The first SISPAD conference took place in Tokyo in 1996 as the successor to three preceding conferences NUPAD, VPAD, and SISDEP. With its longstanding history SISPAD provides a world-wide forum for the presenta tion and discussion of outstanding recent advances and developments in the field of numerical process and device simulation. Driven by the ongoing miniaturization in semiconductor fabrication technology, the variety of topics discussed at this meeting reflects the ever-growing complexity of the subject. Apart from the classic topics like process, device, and interconnect simulation, mesh generation, a broad spec trum of numerical issues, and compact modeling, new simulation approaches like atomistic and first-principles methods have emerged as important fields of research and are currently making their way into standard TCAD suites.
Gallium Nitride And Silicon Carbide Power Technologies
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Author : K. Shenai
language : en
Publisher: The Electrochemical Society
Release Date : 2011
Gallium Nitride And Silicon Carbide Power Technologies written by K. Shenai and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on 2011 with categories.
Gallium Nitride And Silicon Carbide Power Technologies 7
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Author : M. Dudley
language : en
Publisher: The Electrochemical Society
Release Date :
Gallium Nitride And Silicon Carbide Power Technologies 7 written by M. Dudley and has been published by The Electrochemical Society this book supported file pdf, txt, epub, kindle and other format this book has been release on with categories.
Proceedings Of The 1st International Conference On Electronic Engineering And Renewable Energy
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Author : Bekkay Hajji
language : en
Publisher: Springer
Release Date : 2018-08-01
Proceedings Of The 1st International Conference On Electronic Engineering And Renewable Energy written by Bekkay Hajji and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-08-01 with Technology & Engineering categories.
The proceedings present a selection of refereed papers presented at the 1st International Conference on Electronic Engineering and Renewable Energy (ICEERE 2018) held during 15-17 April 2018, Saidi, Morocco. The contributions from electrical engineers and experts highlight key issues and developments essential to the multifaceted field of electrical engineering systems and seek to address multidisciplinary challenges in Information and Communication Technologies. The book has a special focus on energy challenges for developing the Euro-Mediterranean regions through new renewable energy technologies in the agricultural and rural areas. The book is intended for academia, including graduate students, experienced researchers and industrial practitioners working in the fields of Electronic Engineering and Renewable Energy.
Proceedings Of The 3rd International Conference On Electrical And Information Technologies For Rail Transportation Eitrt 2017
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Author : Limin Jia
language : en
Publisher: Springer
Release Date : 2018-03-30
Proceedings Of The 3rd International Conference On Electrical And Information Technologies For Rail Transportation Eitrt 2017 written by Limin Jia and has been published by Springer this book supported file pdf, txt, epub, kindle and other format this book has been release on 2018-03-30 with Technology & Engineering categories.
The proceedings collect the latest research trends, methods and experimental results in the field of electrical and information technologies for rail transportation. The topics cover novel traction drive technologies of rail transportation, safety technology of rail transportation system, rail transportation information technology, rail transportation operational management technology, rail transportation cutting-edge theory and technology etc. The proceedings can be a valuable reference work for researchers and graduate students working in rail transportation, electrical engineering and information technologies.
Nistir
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Author :
language : en
Publisher:
Release Date : 2001
Nistir written by and has been published by this book supported file pdf, txt, epub, kindle and other format this book has been release on 2001 with categories.
Conference Proceedings Of 2021 International Joint Conference On Energy Electrical And Power Engineering
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Author : Cungang Hu
language : en
Publisher: Springer Nature
Release Date : 2022-09-02
Conference Proceedings Of 2021 International Joint Conference On Energy Electrical And Power Engineering written by Cungang Hu and has been published by Springer Nature this book supported file pdf, txt, epub, kindle and other format this book has been release on 2022-09-02 with Technology & Engineering categories.
This book will be a collection of the papers presented in the 2021 International Joint Conference on Energy, Electrical and Power Engineering (CoEEPE’21), covering new and renewable energy, electrical and power engineering. It is expected to report the latest technological developments in the fields developed by academic researchers and industrial practitioners, with a focus on power electronics, energy storage and system control in energy and electrical power systems. The applications and dissemination of these technologies will benefit research society as new research directions are getting more and more inter-disciplinary which require researchers from different research areas to come together and form ideas jointly. It will also benefit the electrical engineering and power industry as we are now experiencing a new wave of industrial revelation, that is, electrification, intelligentization and digitalization of our transport, manufacturing process and way of thinking.
Handbook Of Silicon Carbide Materials And Devices
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Author : Zhe Chuan Feng
language : en
Publisher: CRC Press
Release Date : 2023-05-31
Handbook Of Silicon Carbide Materials And Devices written by Zhe Chuan Feng and has been published by CRC Press this book supported file pdf, txt, epub, kindle and other format this book has been release on 2023-05-31 with Science categories.
This handbook presents the key properties of silicon carbide (SiC), the power semiconductor for the 21st century. It describes related technologies, reports the rapid developments and achievements in recent years, and discusses the remaining challenging issues in the field. The book consists of 15 chapters, beginning with a chapter by Professor W. J. Choyke, the leading authority in the field, and is divided into four sections. The topics include presolar SiC history, vapor-liquid-solid growth, spectroscopic investigations of 3C-SiC/Si, developments and challenges in the 21st century; CVD principles and techniques, homoepitaxy of 4H-SiC, cubic SiC grown on 4H-SiC, SiC thermal oxidation processes and MOS interface, Raman scattering, NIR luminescent studies, Mueller matrix ellipsometry, Raman microscopy and imaging, 4H-SiC UV photodiodes, radiation detectors, and short wavelength and synchrotron X-ray diffraction. This comprehensive work provides a strong contribution to the engineering, materials, and basic science knowledge of the 21st century, and will be of interest to material growers, designers, engineers, scientists, postgraduate students, and entrepreneurs.